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78 results on '"Biccari, F"'

1. Strain engineering of the electronic states of silicon-based quantum emitters

Author

Ristori, A., Granchi, N., Intonti, F., Khoury, M., Hannani, D., Ruiz, C. M., Salvalaglio, M., Filippatos, A., Amato, M., Herzig, T., Meijer, J., Pezzagna, S., Bollani, M., Barri, C., Abbarchi, M., and Biccari, F.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

Light-emitting complex defects in silicon have been considered a potential platform for quantum technologies based on spin and photon degrees of freedom working at telecom wavelengths. Their integration in complex devices is still in its infancy, and it was mostly focused on light extraction and guiding. Here we address the control of the electronic states of carbon-related impurities (G-centers) via strain engineering. By embedding them in patches of silicon on insulator and topping them with SiN, symmetry breaking along [001] and [110] directions is demonstrated, resulting in a controlled splitting of the zero phonon line (ZPL), as accounted for by the piezospectroscopic theoretical framework. The splitting can be as large as 18 meV and it is finely tuned by selecting patch size or by moving in different positions on the patch. Some of the split, strained ZPLs are almost fully polarized and their overall intensity is enhanced up to 7 times with respect to the flat areas, whereas their recombination dynamics is slightly affected. Our technique can be extended to other impurities and Si-based devices such as suspended bridges, photonic crystal microcavities, Mie resonators, and integrated photonic circuits., Comment: 14 pages; 10 figures

Published
2023

2. N-nH complexes in GaAs studied at the atomic scale by cross-sectional scanning tunneling microscopy

Author

Tjeertes, D., Verstijnen, T. J. F., Gonzalo, A., Ulloa, J. M., Sharma, M. S., Felici, M., Polimeni, A., Biccari, F., Gurioli, M., Pettinari, G., Şahin, C., Flatté, M. E., and Koenraad, P. M.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

Hydrogenation of nitrogen (N) doped GaAs allows for reversible tuning of the bandgap and the creation of site controlled quantum dots through the manipulation of N-nH complexes, N-nH complexes, wherein a nitrogen atom is surrounded by n hydrogen (H) atoms. Here we employ cross-sectional scanning tunneling microscopy (X-STM) to study these complexes in the GaAs (110) surface at the atomic scale. In addition to that we performed density functional theory (DFT) calculations to determine the atomic properties of the N-nH complexes. We argue that at or near the (110) GaAs surface two H atoms from N-nH complexes dissociate as an H$_2$ molecule. We observe multiple features related to the hydrogenation process, of which a subset is classified as N-1H complexes. These N-1H related features show an apparent reduction of the local density of states (LDOS), characteristic to N atoms in the GaAs (110) surface with an additional apparent localized enhancement of the LDOS located in one of three crystal directions. N-nH features can be manipulated with the STM tip. Showing in one case a switching behavior between two mirror-symmetric states and in another case a removal of the localized enhancement of the LDOS. The disappearance of the bright contrast is most likely a signature of the removal of an H atom from the N-nH complex., Comment: 11 pages, 12 figures

Published
2020
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3. Graphene-based electron transport layers in perovskite solar cells: a step-up for an efficient carrier collection

Author

Biccari, F., Gabelloni, F., Burzi, E., Gurioli, M., Pescetelli, S., Agresti, A., Castillo, A. E. Del Rio, Ansaldo, A., Kymakis, E., Bonaccorso, F., Di Carlo, A., and Vinattieri, A.

Subjects
Condensed Matter - Materials Science, Condensed Matter - Other Condensed Matter
Abstract

The electron transport layer (ETL) plays a fundamental role in perovskite solar cells. Recently, graphene-based ETLs have been proved to be good candidate for scalable fabrication processes and to achieve higher carrier injection with respect to most commonly used ETLs. In this work we experimentally study the effects of different graphene-based ETLs in sensitized MAPI solar cells. By means of time-integrated and picosecond time-resolved photoluminescence techniques, the carrier recombination dynamics in MAPI films embedded in different ETLs is investigated. Using graphene doped mesoporous TiO2 (G+mTiO2) with the addition of a lithium-neutralized graphene oxide (GO-Li) interlayer as ETL, we find that the carrier collection efficiency is increased by about a factor two with respect to standard mTiO2. Taking advantage of the absorption coefficient dispersion, we probe the MAPI layer morphology, along the thickness, finding that the MAPI embedded in the ETL composed by G+mTiO2 plus GO-Li brings to a very good crystalline quality of the MAPI layer with a trap density about one order of magnitude lower than that found with the other ETLs. In addition, this ETL freezes MAPI at the tetragonal phase, regardless of the temperature. Graphene-based ETLs can open the way to significant improvement of perovskite solar cells., Comment: 7 pages, 5 figures, Supporting Information

Published
2017
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4. Impurity effects in Cu$_2$O

Author

Biccari, F., Malerba, C., and Mittiga, A.

Subjects
Condensed Matter - Materials Science
Abstract

The doping of wide gap semiconductors is an interesting problem both from the scientific and technological point of view. A well known example of this problem is the doping of Cu$_2$O. The only element which has produced an order of magnitude increase in the conductivity of Cu$_2$O bulk samples is chlorine, as previously reported by us and others. However the solar cells produced with this material do not show any improvement in performances because of the reduction in the minority carrier diffusion length. In this paper we investigate the effect of other impurities in order to check their possible use as dopants and to assess their effects on the minority carrier diffusion length. Seven impurities have been introduced by evaporation on the starting copper sheet before the oxidation used to produce Cu$_2$O: chromium (Cr), iron (Fe), silver (Ag), silicon (Si), sodium (Na), sulfur (S) and phosphorus (P). The experiments show that a 20 ppm of concentration of these dopants does not give any relevant effect neither on the resistivity, nor on the mobility. The effect on minority carrier diffusion length is also negligible except for sodium which produces a slight degradation of the samples.

Published
2013

10. Are all people with diabetes and cardiovascular risk factors or microvascular complications at very high risk? Findings from the Risk and Prevention Study

Author

Marzona, Irene, Avanzini, Fausto, Lucisano, Giuseppe, Tettamanti, Mauro, Baviera, Marta, Nicolucci, Antonio, Roncaglioni, Maria Carla, Tombesi, M., Tognoni, G., Massa, E., Marrocco, W., Micalella, M., Caimi, V., Longoni, P., Avanzini, F., Franzosi, M. G., Roncaglioni, M. C., Marzona, I., Baviera, M., Monesi, L., Pangrazzi, I., Barlera, S., Milani, V., Nicolis, E., Casola, C., Clerici, F., Palumbo, A., Sgaroni, G., Marchioli, R., Silletta, M. G., Pioggiarella, R., Scarano, M., Marfisi, R. M., Flamminio, A., Macino, L., Ferri, B., Pera, C., Polidoro, A., Abbatino, D., Acquati, M., Addorisio, G., Adinolfi, D., Adreani, L., Agistri, M. R., Agneta, A., Agnolio, M. L., Agostini, N., Agostino, G., Airò, A., Alaimo, N., Albano, M., Albano, N., Alecci, G., Alemanno, S., Alexanian, A., Alfarano, M., Alfè, L., Alonzo, N., Alvino, S., Ancora, A., Andiloro, S., Andreatta, E., Angeli, S., Angiari, F., Angilletti, V., Annicchiarico, C., Anzivino, M., Aprea, R., Aprile, A., Aprile, E., Aprile, I., Aprile, L., Armellani, V., Arnetoli, M., Aronica, A., Autiero, V., Bacca, G., Baccalaro, A. M., Bacci, M., Baglio, G., Bagnani, M., Baiano, A., Baldari, A., Ballarini, L., Banchi, G., Bandera, R., Bandini, F., Baratella, M., Barbieri, A., Barbieri Vita, A., Bardi, M., Barlocchi, M., Baron, P., Bartoli, M., Basile, A., Basile, F., Basile, S., Battaggia, A., Battaglia, A., Baù, A., Beconcini, G., Beggio, R., Belfiore, P. A., Belicchi, M., Bellamoli, S., Bellini, C., Bellomo, M., Benetollo, C., Benetti, R., Beretta, E., Bertalero, P., Bertaso, F. G., Bertolani, U., Bettelli, G., Biagiotti, G., Bianchi, S., Bianco, G., Biccari, F., Bigioli, F., Bindi, M., Bisanti, G., Bitetti, E. M., Blasetti, M. P., Blesi, F., Boato, V., Boga, S., Boidi, E., Boldrin, G., Bollati, A., Bolzan, L., Bolzonella, S., Bonardi, P., Bonato, G. B., Bonci, M., Bonfitto, G., Bonincontro, E., Boninsegna, F., Bonissone, D., Bono, L., Bonollo, E., Borghi, M., Borioli, N., Borsatto, M., Bosco, T., Bosisio Pioltelli, M., Botarelli, C., Botassis, S., Bottini, F., Bottos, C., Bova, G., Bova, V., Bozzani, A., Bozzetto, R. M., Braga, V. T., Braglia, M., Bramati, E., Brazzoli, C., Breglia, G., Brescia, A., Briganti, D., Brigato, G., Brocchi, A., Brosio, F. A., Bruni, E., Buscaglia, E., Bussini, M. D., Bussotti, A., Buzzaccarini, F., Buzzatti, A., Caccamo, G., Cacciavillani, C., Caggiano, G., Caimi, V., Calciano, F. P., Calderisi, M., Calienno, S., Caltagirone, P., Calzolari, I., Cammisa, M., Campanaro, M., Campanella, G. B., Campese, F., Canali, G., Candiani, D. E. L., Canepa, R., Canini, D., Canino, A., Cantoro, E. A., Capilupi, V., Capotosto, P., Cappelli, B., Capraro, G., Carafa, F. A., Carano, Q., Carcaterra, V., Carriero, D., Carrozzo, G., Cartanese, M., Casalena, M., Casarola, M., Caso, C., Casotto, M., Castaldi, F., Castegnaro, R., Castellani, G., Castri, S., Catalano, E., Catinello, N., Caturano, G., Cavallaro, R., Cavallo, A. M., Cavallo, G., Cavion, M. T., Cavirani, G., Cazzaniga, F., Cazzetta, D., Cecconi, V., Cefalo, A., Celebrano, M., Celora, A., Centonze, P., Cerati, D., Cesaretti, D., Checchia, G., Checchin, A., Cherubini, M., Chianese, L., Chiappa, A., Chiappa, M. V., Chiariello, G., Chiavini, G., Chicco, M., Chiumeo, F., Ciacciarelli, A., Ciaci, D., Ciancaglini, R., Cicale, C., Cicale, S., Cipolla, A., Ciruolo, A., Citeri, A. L., Citterio, G., Clerici, M., Coazzoli, E., Collecchia, G., Colletta, F., Colombo, I., Colorio, P., Coluccia, S., Comerio, M., Comoretto, P., Compagni, M., Conte, O., Contri, S., Contrisciani, A., Coppetti, T., Corasaniti, F., Corradi, M. T., Corsano, A., Corsini, A., Corti, N., Costantini, G., Costantino, A., Cotroneo, S., Cozzi, D., Cravello, M. G., Cristiano, E., Cucchi, R., Cusmai, L., D’Errico, G. B., D’Agostino, P., Dal Bianco, L., Dal Mutto, U., Dal Pozzo, G., Dallapiccola, P., Dallatorre, G., Dalle Molle, G., Dalloni, E., D’Aloiso, A., D’Amicis, G., Danese, R., Danieli, D., Danisi, G., D’Anna, M. A., Danti, G., D’Ascanio, S., Davidde, G., De Angeli, D., De Bastiani, R., De Battisti, A., De Bellis, A., De Berardinis, G., De Carlo, F., De Giorgi, D., De Gobbi, R., De Lorenzis, E., De Luca, P., De Martini, G., De Marzi, M., De Matteis, D., De Padova, S., De Polo, P., De Sabato, N., De Stefano, T., De Vita, M. T., De Vito, U., De Zolt, V., Debernardi, F., Del Carlo, A., Del Re, G., Del Zotti, F., D’Elia, R., Della Giovanna, P., Dell’Acqua, L., Dell’Orco, R. L., Demaria, G., Di Benedetto, M. G., Di Chiara, G., Di Corcia, V., Di Domizio, O., Di Donato, P., Di Donato, S., Di Fermo, G., Di Franco, M., Di Giovannantonio, G., Di Lascio, G., Di Lecce, G., Di Lorenzo, N., Di Maro, T., Di Mattia, Q., Di Michele, E., Di Modica, R. S., Di Murro, D., Di Noi, M. C., Di Paoli, V., Di Santi, M., Di Sanzo, A., Di Turi, C., Diazzi, A., Dileo, I., D’Ingianna, A. P., Dolci, A., Donà, G., Donato, C., Donato, P., Donini, A., Donna, M. E., Donvito, T. V., Esposito, L., Esposito, N., Evangelista, M., Faita, G., Falco, M., Falcone, D. A., Falorni, F., Fanciullacci, A., Fanton, L., Fasolo, L., Fassina, R., Fassone, A., Fatarella, P., Fedele, F., Fera, I., Fera, L., Ferioli, S., Ferlini, M. G., Ferlino, R., Ferrante, G., Ferrara, F. N., Ferrarese, M. F., Ferrari, G., Ferrari, O., Ferreri, A., Ferroni, M., Fezzi, G., Figaroli, C., Fina, M. G., Fioretta, A., Fiorucci, C., Firrincieli, R., Fischetti, M., Fischietti, G., Fiume, D. C., Flecchia, G., Forastiere, G., Fossati, B., Franceschi, P. L., Franchi, L., Franzoso, F., Frapporti, G., Frasca, G., Frisotti, A., Fumagalli, G., Fusco, D., Gabriele, P., Gabrieli, A., Gagliano, D., Galimberti, G., Galli, A., Gallicchio, N., Gallio, F., Gallipoli, T., Gallo, P., Galopin, T., Gambarelli, L., Garbin, A., Garozzo, G. M., Gasparri, R., Gastaldo, M., Gatti, E., Gazzaniga, P., Gennachi, N., Gentile, R. V., Germani, P., Gesualdi, F., Gherardi, E., Ghezzi, C., Ghidini, M. G., Ghionda, F., Giacci, L., Gialdini, D., Giampaolo, C., Giancane, R., Giannanti, A., Giannese, S., Giannini, L., Giaretta, M., Giaretta, R., Giavardi, L., Giordano, P., Giordano, E., Giordano, B., Gioria, G. M., Giugliano, R., Grassi, E. A., Greco, A., Greco, L., Grilletti, N., Grimaldi, N., Grisetti, G., Groppelli, G., Gualtieri, L., Guarducci, M., Guastella, G., Guerra, M., Guerrini, F., Guglielmini, A., Guido, A., Gulotta, P., Iacono, E., Iadarola, G., Ianiro, G., Iarussi, V., Ieluzzi, M. L., Ierardi, C., Ingaldi, F., Interlandi, S., Iocca, M., Iorno, A., Ioverno, E., Iurato, R., La Pace, L., La Piscopia, C., La Selva, R., Lafratta, M., Lamparelli, M., Lanaro, G., Lancerotto, R., Larcher, M., Lassandro, M., Lattuada, G., Laurino, P., Lefons, C., Legrottaglie, F., Lemma, A., Leone, D., Leone, F., Leso, A., Leuzzi, G., Levato, G., Libardi, L., Libralesso, N., Licini, P. I., Licursi, G., Lidonnici, F., Lillo, C., Liveri, L., Livio, A., Loiero, R. A., Loison, M., Lombardo, G., Lombardo, T., Lomunno, V., Lomuscio, S., Lonedo, A., Longo, E., Longoni, P., Lora, L., Lotterio, A., Lucatello, L., Luongo, A., Lupoli, M., Macchia, C., Macri, G., Mafessanti, M., Maggialetti, V., Maggioni, A., Magnani, M., Maiellaro, G., Mancuso, A., Maniglio, A. R., Mannari, G. L., Manni, A., Manocchio, B., Mao, M., Maranò, A., Maraone, E., Marascio, D., Marcheselli, P., Marchetto, B., Marchetto, S., Marchi, A., Marchi, G. L., Mariano, C., Marinacci, S., Marinelli, S., Marini, G., Marra, V. C., Marrali, F., Marseglia, C., Martello, G., Martino, C., Martino, G., Martino, M., Marulli, C. F., Maruzzi, G., Marzotti, A., Mascheroni, G., Mascolo, P., Masoch, G., Masone, R., Massa, E., Massa, L., Massafra, M., Massi, M., Massignani, D. M., Matarese, A. M., Matini, G., Mauro, R., Mazzi, M., Mazzillo, A., Mazzocato, E., Mazzoleni, N. S., Mazzone, A., Melacci, A., Mele, E., Meliota, P., Menaspà, S., Meneghello, F., Merola, G., Merone, L., Metrucci, A., Mezzina, V., Micchi, A., Michielon, A., Migliore, N., Minero, G., Minotta, F., Mirandola, C., Mistrorigo, S., Modafferi, L., Moitre, R., Mola, E., Monachese, C., Mongiardini, C., Montagna, F., Montani, M., Montemurno, I., Montolli, R., Montorsi, S., Montresor, M., Monzani, M. G., Morabito, F., Mori, G., Moro, A., Mosca, M. F., Motti, F., Muddolon, L., Mugnai, M., Muscas, F., Naimoli, F., Nanci, G., Nargi, E., Nasorri, R., Nastrini, G., Negossi, M., Negrini, A., Negroni, A., Neola, V., Niccolini, F., Niro, C. M., Nosengo, C., Novella, G., Nuti, C., Obici, F., Olita, C., Oliverio, S. S., Olivieri, I., Oriente, S., Orlando, G., Paci, C., Pagano, G., Pagliara, C., Paita, G., Paladini, G., Paladino, G., Palano, T., Palatella, A., Palermo, P., Palmisano, M., Pando, P., Panessa, P., Panigo, F., Panozzo, G., Panvini, F., Panzieri, F., Panzino, A., Panzitta, F., Paoli, N., Papagna, R., Papaleo, M. G., Papalia, G., Parisi, R., Parotti, N., Parravicini, D., Passarella, P., Pastore, G. A., Patafio, M., Pavone, P., Pedroli, W., Pedroni, M., Pelligra, G., Pellizzari, M., Penati, A., Perlot, M., Perrone, A., Perrone, G., Peruzzi, P., Peselli, C., Petracchini, L., Petrera, L., Petrone, S., Peverelli, C., Pianorsi, F., Piazza, G. P., Piazzolla, G., Picci, A., Pienabarca, G., Pietronigro, T. P., Pignocchino, P., Pilone, R., Pinto, D., Pirovano, E., Pirrotta, D., Pisante, V., Pitotto, P., Pittari, L., Piva, A., Pizzoglio, A., Plantera, O. R., Plebani, W., Plessi, S., Podrecca, D., Poerio, V., Poggiani, F., Pogliani, W., Poli, L., Poloni, F. G., Porcelli, R., Porto, S., Pranzo, L., Prevedello, C., Profeta, C., Profico, D., Punzi, A., Quaglia, G. M., Racano, M., Raccone, A., Radice, F., Raho, C. A., Raimondi, R., Rainò, M., Ramponi, R., Ramunni, A., Ramunni, A. L., Ravasio, F., Ravera, M., Re Sartò, G., Rebustello, G., Regazzoli, S., Restelli, C., Rezzonico, M., Ricchiuto, F., Rigo, S., Rigon, G., Rigon, R., Rinaldi, O. V., Rinaldi, M., Risplendente, P. G., Rispoli, M., Riundi, R., Riva, M. G., Rizzi, A. L., Rizzi, D., Rizzo, L. D., Rocchi, L., Rondinone, B., Rosa, B., Rosati, F., Roselli, F., Rossetti, A., Rossetti, C., Rossi, R., Rossi, P. R., Rossi, A., Rossi, C. L., Rossitto, A., Ruffini, R., Ruffo, A., Ruggio, S., Ruo, M., Russo, B., Russo, L., Russo, R., Russo, S., Russo, U., Russo, V., Ruta, G., Sacchi, F., Sacco Botto, F., Saia, A., Salladini, G., Salmoiraghi, S., Saluzzo, F., Salvatore, C., Salvatori, E., Salvio, G., Sandri, P., Sandrini, T., Sangermano, V., Santoni, N., Saracino, A. D., Saracino, A., Sarasin, P., Sardo Infirri, C., Sarrì, B., Sartori, G., Sartori, N., Sauro, C., Scaglioni, M., Scalfi, C., Scamardella, A. M., Scandale, G., Scandone, L., Scannavini, G., Scarati, R., Scardi, A., Scarpa, F. M., Scazzi, P., Schifone, A., Schiroso, G., Scigliano, G., Scilla, A., Sciortino, M., Scolaro, G., Scollo, E., Scorretti, G., Sellitti, R., Selmo, A., Selvaggio, G., Sempio, A., Seren, F., Serio, L., Serra, C., Serra, L., Siciliano, D., Sideri, A., Sighele, M., Signore, R., Siliberto, F., Silvestro, M., Simioni, G., Simmini, G., Simonato, L., Sinchetto, F., Sizzano, E., Smajato, G., Smaldone, M., Sola, G., Sordillo, L., Sovran, C. S., Spagnul, P., Spanò, F., Sproviero, S., Squintani, A., Stella, L., Stilo, V., Stocchiero, B., Stornello, M. C., Stracka, G., Strada, S., Stranieri, G., Stucci, N., Stufano, N., Suppa, A., Susca, V. G., Sutti, M., Taddei, M., Tagliabue, E., Tagliente, G., Talato, F., Talerico, P., Talia, R., Taranto, R., Tartaglia, M., Tauro, N., Tedesco, A., Tieri, P., Tirelli, M., Tocci, L., Todesco, P., Tognolo, M., Tomba, A., Tonello, P., Tonon, R., Toscano, L., Tosi, A., Tosi, G., Toso, S., Travaglio, P., Tremul, L., Tresso, C., Triacchini, P., Triggiano, L., Trigilio, A., Trimeloni, J., Tripicchio, G., Tritto, G. S., Trono, F., Trotta, E., Trotta, G., Tubertini, A., Turri, C., Turri, L., Tuttolani, M. P., Urago, M., Ursini, G., Valcanover, F., Valente, L., Valenti, M., Valentini, F., Vallone, G., Valz, P., Valzano, L., Vanin, V., Vatteroni, M., Vegetti, L., Vendrame, D., Veramonti, I., Veronelli, G., Vesco, A., Vicariotto, G., Vignale, G., Villa, P. L., Vinciguerra, R., Visco, A., Visentin, G., Visonà, E., Vitali, E., Vitali, S., Vitti, F., Volpone, D. A., Zambon, N., Zammarrelli, A., Zanaboni, A., Zane, D., Zanetti, B., Zanibellato, R., Zappetti, M., Zappone, P., Zerilli, G., Zirino, V., Zoccali, R., Zuin, F., Altomonte, M., Anelli, N., Angiò, F., Annale, P., Antonacci, S., Anzilotta, R., Bano, F., Basadonna, O., Beduschi, L., Becagli, P., Bellotti, G., Blotta, C., Bruno, G., Cappuccini, A., Caramatti, S., Cariolato, M. P., Castellana, M., Castellani, L., Catania, R., Chielli, A., Chinellato, A., Ciaccia, A., Clerici, E., Cocci, A., Costanzo, G., D’Ercole, F., De Stefano, G., Decè, F., Di Cicco, N., Di Marco, A., Donati Sarti, C., Draghi, E., Dusi, G., Esposito, V., Ferraro, L., Ferretti, A., Ferri, E., Foggetti, L., Foglia, A., Fonzi, E., Frau, G., Fuoco, M. R., Furci, G., Gallo, L., Garra, V., Giannini, A., Gris, A., Iacovino, R., Interrigi, R., Joppi, R., Laner, B., La Fortezza, G., La Padula, A., Lista, M. R., Lupi, G., Maffei, D., Maggioni, G., Magnani, L., Marrazzo, E., Marcon, L., Marinò, V., Maroni, A., Martinelli, C., Mastandrea, E., Mastropierro, F., Meo, A. T., Mero, P., Minesso, E., Moschetta, V., Mosele, E., Nanni, C., Negretti, A., Nisticò, C., Orsini, A., Osti, M., Pacilli, M. C., Pennestre, C., Picerno, G., Piol, K., Pivano, L., Pizzuti, E., Poggi, L., Poidomani, I., Pozzetto, M., Presti, M. L., Ravani, R., Recalenda, V., Romagnuolo, F., Rossignoli, S., Rossin, E., Sabatella, C., Sacco, F., Sanità, F., Sansone, E., Servadei, F., Sisto, M. T., Sorio, A., Sorrentino, A., Spinelli, E., Spolaor, A., Squillacioti, A., Stella, P., Talerico, A., Todisco, C., Vadino, M., Zuliani, C., and Risk & Prevention Collaborative Group

Published
2017
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11. Photonic Jet Writing of Quantum Dots Self-Aligned to Dielectric Microspheres

Author

Ristori, A, Hamilton, T, Toliopoulos, D, Felici, M, Pettinari, G, Sanguinetti, S, Gurioli, M, Mohseni, H, Biccari, F, Ristori A., Hamilton T., Toliopoulos D., Felici M., Pettinari G., Sanguinetti S., Gurioli M., Mohseni H., Biccari F., Ristori, A, Hamilton, T, Toliopoulos, D, Felici, M, Pettinari, G, Sanguinetti, S, Gurioli, M, Mohseni, H, Biccari, F, Ristori A., Hamilton T., Toliopoulos D., Felici M., Pettinari G., Sanguinetti S., Gurioli M., Mohseni H., and Biccari F.

Abstract

Owing to their ability to generate non-classical light states, quantum dots (QDs) are very promising candidates for the large-scale implementation of quantum information technologies. However, the high photon collection efficiency demanded by these technologies may be impossible to reach for “standalone” semiconductor QDs, embedded in a high-refractive index medium. In this work a novel laser writing technique is presented, enabling the direct fabrication of a QD self-aligned—with a precision of ±30 nm—to a dielectric microsphere. The presence of the microsphere leads to an enhancement of the QD luminescence collection by a factor 7.3 ± 0.7 when an objective with 0.7 numerical aperture is employed. This technique exploits the possibility of breaking the N−H bonds in GaAs (Formula presented.) Nx:H by a laser light, obtaining a lower-bandgap material, GaAs (Formula presented.) Nx. The microsphere, deposited on top of a GaAs (Formula presented.) Nx:H/GaAs quantum well, is used to generate a photonic nanojet, which removes hydrogen exactly below the microsphere, creating a GaAs (Formula presented.) Nx QD at a predefined distance from the sample surface. Second-order autocorrelation measurements confirm the ability of the QDs obtained with this technique to emit single photons.

Published
2021

12. Quantum Dots Luminescence Collection Enhancement and Nanoscopy by Dielectric Microspheres

Author

Biccari, F, Hamilton, T, Ristori, A, Sanguinetti, S, Bietti, S, Gurioli, M, Mohseni, H, Biccari F., Hamilton T., Ristori A., Sanguinetti S., Bietti S., Gurioli M., Mohseni H., Biccari, F, Hamilton, T, Ristori, A, Sanguinetti, S, Bietti, S, Gurioli, M, Mohseni, H, Biccari F., Hamilton T., Ristori A., Sanguinetti S., Bietti S., Gurioli M., and Mohseni H.

Abstract

In recent years, dielectric microspheres have been used in conjunction with optical microscopes to beat the diffraction limit and to obtain superresolution imaging. The use of microspheres on quantum dots (QDs) is investigated, for the first time, to enhance the light coupling efficiency. The enhancement of the QD luminescence collection in terms of extraction and directionality is demonstrated, as well as the enhancement of spatial resolution. In particular, it is found that a dielectric microsphere, placed on top of an epitaxial QD, increases the collected radiant energy by about a factor of 42, when a low numerical aperture objective is used. Moreover, if two or more QDs are present below the microsphere, the modification of the far field emission pattern allows selective collection of the luminescence from a single QD by simply changing the collection angle. Dielectric microspheres present a simple and efficient tool to improve the QD spectroscopy, and potentially QD-based devices.

Published
2020

14. GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers

Author

Ballabio, A, Bietti, S, Scaccabarozzi, A, Esposito, L, Vichi, S, Fedorov, A, Vinattieri, A, Mannucci, C, Biccari, F, Nemcsis, A, Toth, L, Miglio, L, Gurioli, M, Isella, G, Sanguinetti, S, Ballabio A., Bietti S., Scaccabarozzi A., Esposito L., Vichi S., Fedorov A., Vinattieri A., Mannucci C., Biccari F., Nemcsis A., Toth L., Miglio L., Gurioli M., Isella G., Sanguinetti S., Ballabio, A, Bietti, S, Scaccabarozzi, A, Esposito, L, Vichi, S, Fedorov, A, Vinattieri, A, Mannucci, C, Biccari, F, Nemcsis, A, Toth, L, Miglio, L, Gurioli, M, Isella, G, Sanguinetti, S, Ballabio A., Bietti S., Scaccabarozzi A., Esposito L., Vichi S., Fedorov A., Vinattieri A., Mannucci C., Biccari F., Nemcsis A., Toth L., Miglio L., Gurioli M., Isella G., and Sanguinetti S.

Abstract

We demonstrate the growth of low density anti-phase boundaries, crack-free GaAs epilayers, by Molecular Beam Epitaxy on silicon (001) substrates. The method relies on the deposition of thick GaAs on a suspended Ge buffer realized on top of deeply patterned Si substrates by means of a three-temperature procedure for the growth. This approach allows to suppress, at the same time, both threading dislocations and thermal strain in the epilayer and to remove anti-phase boundaries even in absence of substrate tilt. Photoluminescence measurements show the good uniformity and the high optical quality of AlGaAs/GaAs quantum well structures realized on top of such GaAs layer.

Published
2019

15. N−nH complexes in GaAs studied at the atomic scale by cross-sectional scanning tunneling microscopy

Author

Tjeertes, D., primary, Verstijnen, T. J. F., additional, Gonzalo, A., additional, Ulloa, J. M., additional, Sharma, M. S., additional, Felici, M., additional, Polimeni, A., additional, Biccari, F., additional, Gurioli, M., additional, Pettinari, G., additional, Şahin, C., additional, Flatté, M. E., additional, and Koenraad, P. M., additional

Published
2020
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16. Temperature activated coupling in topologically distinct semiconductor nanostructures.

Author

Biccari, F., Bietti, S., Cavigli, L., Vinattieri, A., Nötzel, R., Gurioli, M., and Sanguinetti, S.

Subjects
*GALLIUM arsenide, *NANOSTRUCTURES, *QUANTUM dots, *QUANTUM rings, *PHOTOLUMINESCENCE
Abstract

We present a detailed analysis of the emission of individual GaAs/AlGaAs complex nano-systems composed of two concentric and topologically distinct quantum nanostructures, namely, a quantum dot and a quantum ring. Time resolved, temperature and excitation power density dependence of the photoluminescence from single and ensemble dot/ring structures have been used in order to determine the carrier dynamics. Despite the small spatial separation between the dot and the ring, the exciton dynamics in the two nanostructures is completely decoupled at low temperatures. At higher temperatures, we observe a clear change in the carrier dynamics, which shows the onset of the coupling between the two nanostructures. We attribute such change in carrier dynamics to the breaking of topology induced selection rules which allows the transfer of the carriers between the dot and the ring via an electronic quantum state, common to the two nanostructures. [ABSTRACT FROM AUTHOR]

Published
2016
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17. Near-field imaging of single walled carbon nanotubes emitting in the telecom wavelength range.

Author

La China, F., Caselli, N., Sarti, F., Biccari, F., Torrini, Intonti, F., Vinattieri, A., Durán-Valdeiglesias, E., Ramos, C. Alonso, Le Roux, X., Balestrieri, M., Filoramo, A., Vivien, L., and Gurioli, M.

Subjects
CARBON nanotubes, HYBRID systems, PHOTONICS, PHOTOLUMINESCENCE, SPATIAL distribution (Quantum optics)
Abstract

Hybrid systems based on carbon nanotubes emitting in the telecom wavelength range and Si-photonic platforms are promising candidates for developing integrated photonic circuits. Here, we consider semiconducting single walled carbon nanotubes (s-SWNTs) emitting around 1300 nm or 1550 nm wavelength. The nanotubes are deposited on quartz substrate for mapping their photoluminescence in hyperspectral near-field microscopy. This method allows for a sub-wavelength resolution in detecting the spatial distribution of the emission of single s-SWNTs at room temperature. Optical signature delocalized over several micrometers is observed, thus denoting the high quality of the produced carbon nanotubes on a wide range of tube diameters. Noteworthy, the presence of both nanotube bundles and distinct s-SWNT chiralities is uncovered. [ABSTRACT FROM AUTHOR]

Published
2016
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18. N-nH complexes in GaAs studied at the atomic scale by cross-sectional scanning tunneling microscopy

Author

Tjeertes, Douwe, Verstijnen, Tom, Gonzalo, Alicia, Ulloa, Jose M., Sharma, M.S., Felici, M., Polimeni, A., Biccari, F., Gurioli, M., Pettinari, G., Sahin, C., Flatté, Michael E., Koenraad, Paul M., Tjeertes, Douwe, Verstijnen, Tom, Gonzalo, Alicia, Ulloa, Jose M., Sharma, M.S., Felici, M., Polimeni, A., Biccari, F., Gurioli, M., Pettinari, G., Sahin, C., Flatté, Michael E., and Koenraad, Paul M.

Abstract

Hydrogenation of nitrogen (N) doped GaAs allows for reversible tuning of the band gap and the creation of site controlled quantum dots through the manipulation of N−nH complexes, N−nH complexes, wherein a nitrogen atom is surrounded by n hydrogen (H) atoms. Here we employ cross-sectional scanning tunneling microscopy (X-STM) to study these complexes in the GaAs (110) surface at the atomic scale. In addition to that we performed density functional theory (DFT) calculations to determine the atomic properties of the N−nH complexes. We argue that at or near the (110) GaAs surface two H atoms from N−nH complexes dissociate as an H2 molecule. We observe multiple features related to the hydrogenation process, of which a subset is classified as N-1H complexes. These N-1H related features show an apparent reduction of the local density of states (LDOS), characteristic to N atoms in the GaAs (110) surface with an additional apparent localized enhancement of the LDOS located in one of three crystal directions. N−nH features can be manipulated with the STM tip. Showing in one case a switching behavior between two mirror-symmetric states and in another case a removal of the localized enhancement of the LDOS. The disappearance of the bright contrast is most likely a signature of the removal of an H atom from the N−nH complex.

Published
2020

19. Site-controlled natural GaAs(111) quantum dots fabricated on vertical GaAs/Ge microcrystals on deeply patterned Si(001) substrates

Author

Biccari, F, Esposito, L, Mannucci, C, Taboada, A, Bietti, S, Ballabio, A, Fedorov, A, Isella, G, Von Känel, H, Miglio, L, Sanguinetti, S, Vinattieri, A, Gurioli, M, Biccari, F., Esposito, L., Mannucci, C., Taboada, A. G., Bietti, S., Ballabio, A., Fedorov, A., Isella, G., Von Känel, H., Miglio, L., Sanguinetti, S., Vinattieri, A., Gurioli, M., Biccari, F, Esposito, L, Mannucci, C, Taboada, A, Bietti, S, Ballabio, A, Fedorov, A, Isella, G, Von Känel, H, Miglio, L, Sanguinetti, S, Vinattieri, A, Gurioli, M, Biccari, F., Esposito, L., Mannucci, C., Taboada, A. G., Bietti, S., Ballabio, A., Fedorov, A., Isella, G., Von Känel, H., Miglio, L., Sanguinetti, S., Vinattieri, A., and Gurioli, M.

Abstract

Semiconductor quantum dots (QDs), made of III-V semiconductors alloys, have attracted increasing interest in the last two decades, especially for their possible usage in quantum information technology. However, for such advanced applications, the requisite control of the QD's position cannot be achieved by the conventional growth techniques. Moreover, silicon (Si) dominates the microelectronic technology but its use is limited for optoelectronic applications due to its indirect bandgap. Therefore, the possibility to integrate QDs made of III-V alloys on a Si-based platform and circuitry is of the utmost importance. However, this is hindered by the very different lattice constants and thermal expansion coefficients of Si and GaAs, which generate strain and defects. In this paper we overcome the mismatch problems using the self-limited growth of germanium on micro-patterned (001) Si to obtain a relaxed GaAs(111) oriented epilayer for the subsequent heteroepitaxy of III-V nanostructures. In particular we optically characterize a stack of three GaAs/AlGaAs quantum wells (QWs) grown on top of the Si/Ge pillars. We provide clear evidence of the presence of naturally formed QDs, due to QW thickness fluctuations, and their position control with micrometer resolution, given by the pillar distance

Published
2017

20. GaAs/AlGaAs heterostructures on suspended Ge epilayers on nominal (001) deeply patterned silicon substrates

Author

Bietti, S, Ballabio, A, Esposito, L, Fedorov, A, Scaccabarozzi, A, Vinattieri, A, Biccari, F, Nemcsics, Á, Tóth, L, Gurioli, M, Isella, G, Miglio, L, Sanguinetti, S, Bietti, S, Ballabio, A, Esposito, L, Fedorov, A, Scaccabarozzi, A, Vinattieri, A, Biccari, F, Nemcsics, Á, Tóth, L, Gurioli, M, Isella, G, Miglio, L, and Sanguinetti, S

Subjects
MBE, epitaxy, patterning, quantum well, III-V integration, micro photoluminescence, FIS/03 - FISICA DELLA MATERIA
Abstract

The integration of optoelectronic and photonic devices based on III–V semiconductors on Si-based integrated circuits is far from being optimized despite its technological relevance. Due to the differences in lattice parameters and thermal expansion coefficients, high density of defect is introduced. We propose a novel approach for the fabrication of GaAs/AlGaAs heterostructures on nominal (001) Si substrates based on suspended Ge epilayers. To eliminate dislocations and thermal cracks we use a patterned Si substrate on which we grow with a LEPECVD system, separated vertical Ge micro-crystals, efficient in eliminating the threading dislocations and the thermal strain. From such micro-crystals, a suspended Ge layer, hundreds of microns wide and free of thermal stress can be obtained. The suspended Ge shows a wavy surface on which double steps are formed, permitting the reduction of anti-phase domains even in absence of substrate tilt. GaAs layers were grown on such Ge/Si substrate in a MBE system. Different growth recipes were studied. We found that diffusion length of Ga adatom, which is related to the average nucleation distance of GaAs islands, has a crucial role in the determination of the average APD size. In the optimum growth conditions, it was possible to observe average dimensions of APD free area with a lateral dimension of 30 μm. Macro and Micro-PL of AlGaAs/GaAs QWs grew on top show that uniform, optical quality GaAs layers are fabricated.

Published
2017

21. Hybrid Carbon Nanotubes Integration In Silicon Photonic Platform

Author

Valdeiglesias, E.Duran, primary, Zhang, W., additional, Alonso-Ramos, C., additional, Roux, X.Le, additional, Serna, S., additional, Hoang, T.H.C., additional, Balestrieri, M., additional, Marris-Morini, D., additional, Biccari, F., additional, Vinattieri, A., additional, Gurioli, M., additional, Filoramo, A., additional, Cassan, E., additional, and Vivien, L., additional

Published
2018
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22. Generalized Fano lineshapes reveal exceptional points in photonic molecules

Author

Caselli, N., Intonti, F., La China, Federico, Biccari, F., Riboli, F., Gerardino, A., Li, L., Linfield, E.H., Pagliano, F., Fiore, A., Gurioli, M., Caselli, N., Intonti, F., La China, Federico, Biccari, F., Riboli, F., Gerardino, A., Li, L., Linfield, E.H., Pagliano, F., Fiore, A., and Gurioli, M.

Abstract

The optical behavior of coupled systems, in which the breaking of parity and time-reversal symmetry occurs, is drawing increasing attention to address the physics of the exceptional point singularity, i.e., when the real and imaginary parts of the normal-mode eigenfrequencies coincide. At this stage, fascinating phenomena are predicted, including electromagnetic-induced transparency and phase transitions. To experimentally observe the exceptional points, the near-field coupling to waveguide proposed so far was proved to work only in peculiar cases. Here, we extend the interference detection scheme, which lies at the heart of the Fano lineshape, by introducing generalized Fano lineshapes as a signature of the exceptional point occurrence in resonant-scattering experiments. We investigate photonic molecules and necklace states in disordered media by means of a near-field hyperspectral mapping. Generalized Fano profiles in material science could extend the characterization of composite nanoresonators, semiconductor nanostructures, and plasmonic and metamaterial devices.

Published
2018

24. Are all people with diabetes and cardiovascular risk factors or microvascular complications at very high risk? Findings from the Risk and Prevention Study

Author

Marzona, I., Avanzini, F., Lucisano, G., Tettamanti, M., Baviera, M., Nicolucci, A., Roncaglioni, M. C., Tombesi, M., Tognoni, G., Massa, E., Marrocco, W., Micalella, M., Caimi, V., Longoni, P., Franzosi, M. G., Monesi, L., Pangrazzi, I., Barlera, S., Milani, V., Nicolis, E., Casola, C., Clerici, F., Palumbo, A., Sgaroni, G., Marchioli, R., Silletta, M. G., Pioggiarella, R., Scarano, M., Marfisi, R. M., Flamminio, A., Macino, L., Ferri, B., Pera, C., Polidoro, A., Abbatino, D., Acquati, M., Addorisio, G., Adinolfi, D., Adreani, L., Agistri, M. R., Agneta, A., Agnolio, M. L., Agostini, N., Agostino, G., Airo, A., Alaimo, N., Albano, M., Albano, N., Alecci, G., Alemanno, S., Alexanian, A., Alfarano, M., Alfe, L., Alonzo, N., Alvino, S., Ancora, A., Andiloro, S., Andreatta, E., Angeli, S., Angiari, F., Angilletti, V., Annicchiarico, C., Anzivino, M., Aprea, R., Aprile, A., Aprile, E., Aprile, I., Aprile, L., Armellani, V., Arnetoli, M., Aronica, A., Autiero, V., Bacca, G., Baccalaro, A. M., Bacci, M., Baglio, G., Bagnani, M., Baiano, A., Baldari, A., Ballarini, L., Banchi, G., Bandera, R., Bandini, F., Baratella, M., Barbieri, A., Barbieri Vita, A., Bardi, M., Barlocchi, M., Baron, P., Bartoli, M., Basile, A., Basile, F., Basile, S., Battaggia, A., Battaglia, A., Bau, A., Beconcini, G., Beggio, R., Belfiore, P. A., Belicchi, M., Bellamoli, S., Bellini, C., Bellomo, M., Benetollo, C., Benetti, R., Beretta, E., Bertalero, P., Bertaso, F. G., Bertolani, U., Bettelli, G., Biagiotti, G., Bianchi, S., Bianco, G., Biccari, F., Bigioli, F., Bindi, M., Bisanti, G., Bitetti, E. M., Blasetti, M. P., Blesi, F., Boato, V., Boga, S., Boidi, E., Boldrin, G., Bollati, A., Bolzan, L., Bolzonella, S., Bonardi, P., Bonato, G. B., Bonci, M., Bonfitto, G., Bonincontro, E., Boninsegna, F., Bonissone, D., Bono, L., Bonollo, E., Borghi, M., Borioli, N., Borsatto, M., Bosco, T., Bosisio Pioltelli, M., Botarelli, C., Botassis, S., Bottini, F., Bottos, C., Bova, G., Bova, V., Bozzani, A., Bozzetto, R. M., Braga, V. T., Braglia, M., Bramati, E., Brazzoli, C., Breglia, G., Brescia, A., Briganti, D., Brigato, G., Brocchi, A., Brosio, F. A., Bruni, E., Buscaglia, E., Bussini, M. D., Bussotti, A., Buzzaccarini, F., Buzzatti, A., Caccamo, G., Cacciavillani, C., Caggiano, G., Calciano, F. P., Calderisi, M., Calienno, S., Caltagirone, P., Calzolari, I., Cammisa, M., Campanaro, M., Campanella, G. B., Campese, F., Canali, G., Candiani, D. E. L., Canepa, R., Canini, D., Canino, A., Cantoro, E. A., Capilupi, V., Capotosto, P., Cappelli, B., Capraro, G., Carafa, F. A., Carano, Q., Carcaterra, V., Carriero, D., Carrozzo, G., Cartanese, M., Casalena, M., Casarola, M., Caso, C., Casotto, M., Castaldi, F., Castegnaro, R., Castellani, G., Castri, S., Catalano, E., Catinello, N., Caturano, G., Cavallaro, R., Cavallo, A. M., Cavallo, G., Cavion, M. T., Cavirani, G., Cazzaniga, F., Cazzetta, D., Cecconi, V., Cefalo, A., Celebrano, M., Celora, A., Centonze, P., Cerati, D., Cesaretti, D., Checchia, G., Checchin, A., Cherubini, M., Chianese, L., Chiappa, A., Chiappa, M. V., Chiariello, G., Chiavini, G., Chicco, M., Chiumeo, F., Ciacciarelli, A., Ciaci, D., Ciancaglini, R., Cicale, C., Cicale, S., Cipolla, A., Ciruolo, A., Citeri, A. L., Citterio, G., Clerici, M., Coazzoli, E., Collecchia, G., Colletta, F., Colombo, I., Colorio, P., Coluccia, S., Comerio, M., Comoretto, P., Compagni, M., Conte, O., Contri, S., Contrisciani, A., Coppetti, T., Corasaniti, F., Corradi, M. T., Corsano, A., Corsini, A., Corti, N., Costantini, G., Costantino, A., Cotroneo, S., Cozzi, D., Cravello, M. G., Cristiano, E., Cucchi, R., Cusmai, L., D'Errico, G. B., D'Agostino, P., Dal Bianco, L., Dal Mutto, U., Dal Pozzo, G., Dallapiccola, P., Dallatorre, G., Dalle Molle, G., Dalloni, E., D'Aloiso, A., D'Amicis, G., Danese, R., Danieli, D., Danisi, G., D'Anna, M. A., Danti, G., D'Ascanio, S., Davidde, G., De Angeli, D., De Bastiani, R., De Battisti, A., De Bellis, A., De Berardinis, G., De Carlo, F., De Giorgi, D., De Gobbi, R., De Lorenzis, E., De Luca, P., De Martini, G., De Marzi, M., De Matteis, D., De Padova, S., De Polo, P., De Sabato, N., De Stefano, T., De Vita, M. T., De Vito, U., De Zolt, V., Debernardi, F., Del Carlo, A., Del Re, G., Del Zotti, F., D'Elia, R., Della Giovanna, P., Dell'Acqua, L., Dell'Orco, R. L., Demaria, G., Di Benedetto, M. G., Di Chiara, G., Di Corcia, V., Di Domizio, O., Di Donato, P., Di Donato, S., Di Fermo, G., Di Franco, M., Di Giovannantonio, G., Di Lascio, G., Di Lecce, G., Di Lorenzo, N., Di Maro, T., Di Mattia, Q., Di Michele, E., Di Modica, R. S., Di Murro, D., Di Noi, M. C., Di Paoli, V., Di Santi, M., Di Sanzo, A., Di Turi, C., Diazzi, A., Dileo, I., D'Ingianna, A. P., Dolci, A., Dona, G., Donato, C., Donato, P., Donini, A., Donna, M. E., Donvito, T. V., Esposito, L., Esposito, N., Evangelista, M., Faita, G., Falco, M., Falcone, D. A., Falorni, F., Fanciullacci, A., Fanton, L., Fasolo, L., Fassina, R., Fassone, A., Fatarella, P., Fedele, F., Fera, I., Fera, L., Ferioli, S., Ferlini, M. G., Ferlino, R., Ferrante, G., Ferrara, F. N., Ferrarese, M. F., Ferrari, G., Ferrari, O., Ferreri, A., Ferroni, M., Fezzi, G., Figaroli, C., Fina, M. G., Fioretta, A., Fiorucci, C., Firrincieli, R., Fischetti, M., Fischietti, G., Fiume, D. C., Flecchia, G., Forastiere, G., Fossati, B., Franceschi, P. L., Franchi, L., Franzoso, F., Frapporti, G., Frasca, G., Frisotti, A., Fumagalli, G., Fusco, D., Gabriele, P., Gabrieli, A., Gagliano, D., Galimberti, G., Galli, A., Gallicchio, N., Gallio, F., Gallipoli, T., Gallo, P., Galopin, T., Gambarelli, L., Garbin, A., Garozzo, G. M., Gasparri, R., Gastaldo, M., Gatti, E., Gazzaniga, P., Gennachi, N., Gentile, R. V., Germani, P., Gesualdi, F., Gherardi, E., Ghezzi, C., Ghidini, M. G., Ghionda, F., Giacci, L., Gialdini, D., Giampaolo, C., Giancane, R., Giannanti, A., Giannese, S., Giannini, L., Giaretta, M., Giaretta, R., Giavardi, L., Giordano, P., Giordano, E., Giordano, B., Gioria, G. M., Giugliano, R., Grassi, E. A., Greco, A., Greco, L., Grilletti, N., Grimaldi, N., Grisetti, G., Groppelli, G., Gualtieri, L., Guarducci, M., Guastella, G., Guerra, M., Guerrini, F., Guglielmini, A., Guido, A., Gulotta, P., Iacono, E., Iadarola, G., Ianiro, G., Iarussi, V., Ieluzzi, M. L., Ierardi, C., Ingaldi, F., Interlandi, S., Iocca, M., Iorno, A., Ioverno, E., Iurato, R., La Pace, L., La Piscopia, C., La Selva, R., Lafratta, M., Lamparelli, M., Lanaro, G., Lancerotto, R., Larcher, M., Lassandro, M., Lattuada, G., Laurino, P., Lefons, C., Legrottaglie, F., Lemma, A., Leone, D., Leone, F., Leso, A., Leuzzi, G., Levato, G., Libardi, L., Libralesso, N., Licini, P. I., Licursi, G., Lidonnici, F., Lillo, C., Liveri, L., Livio, A., Loiero, R. A., Loison, M., Lombardo, G., Lombardo, T., Lomunno, V., Lomuscio, S., Lonedo, A., Longo, E., Lora, L., Lotterio, A., Lucatello, L., Luongo, A., Lupoli, M., Macchia, C., Macri, G., Mafessanti, M., Maggialetti, V., Maggioni, A., Magnani, M., Maiellaro, G., Mancuso, A., Maniglio, A. R., Mannari, G. L., Manni, A., Manocchio, B., Mao, M., Marano, A., Maraone, E., Marascio, D., Marcheselli, P., Marchetto, B., Marchetto, S., Marchi, A., Marchi, G. L., Mariano, C., Marinacci, S., Marinelli, S., Marini, G., Marra, V. C., Marrali, F., Marseglia, C., Martello, G., Martino, C., Martino, G., Martino, M., Marulli, C. F., Maruzzi, G., Marzotti, A., Mascheroni, G., Mascolo, P., Masoch, G., Masone, R., Massa, L., Massafra, M., Massi, M., Massignani, D. M., Matarese, A. M., Matini, G., Mauro, R., Mazzi, M., Mazzillo, A., Mazzocato, E., Mazzoleni, N. S., Mazzone, A., Melacci, A., Mele, E., Meliota, P., Menaspa, S., Meneghello, F., Merola, G., Merone, L., Metrucci, A., Mezzina, V., Micchi, A., Michielon, A., Migliore, N., Minero, G., Minotta, F., Mirandola, C., Mistrorigo, S., Modafferi, L., Moitre, R., Mola, E., Monachese, C., Mongiardini, C., Montagna, F., Montani, M., Montemurno, I., Montolli, R., Montorsi, S., Montresor, M., Monzani, M. G., Morabito, F., Mori, G., Moro, A., Mosca, M. F., Motti, F., Muddolon, L., Mugnai, M., Muscas, F., Naimoli, F., Nanci, G., Nargi, E., Nasorri, R., Nastrini, G., Negossi, M., Negrini, A., Negroni, A., Neola, V., Niccolini, F., Niro, C. M., Nosengo, C., Novella, G., Nuti, C., Obici, F., Olita, C., Oliverio, S. S., Olivieri, I., Oriente, S., Orlando, G., Paci, C., Pagano, G., Pagliara, C., Paita, G., Paladini, G., Paladino, G., Palano, T., Palatella, A., Palermo, P., Palmisano, M., Pando, P., Panessa, P., Panigo, F., Panozzo, G., Panvini, F., Panzieri, F., Panzino, A., Panzitta, F., Paoli, N., Papagna, R., Papaleo, M. G., Papalia, G., Parisi, R., Parotti, N., Parravicini, D., Passarella, P., Pastore, G. A., Patafio, M., Pavone, P., Pedroli, W., Pedroni, M., Pelligra, G., Pellizzari, M., Penati, A., Perlot, M., Perrone, A., Perrone, G., Peruzzi, P., Peselli, C., Petracchini, L., Petrera, L., Petrone, S., Peverelli, C., Pianorsi, F., Piazza, G. P., Piazzolla, G., Picci, A., Pienabarca, G., Pietronigro, T. P., Pignocchino, P., Pilone, R., Pinto, D., Pirovano, E., Pirrotta, D., Pisante, V., Pitotto, P., Pittari, L., Piva, A., Pizzoglio, A., Plantera, O. R., Plebani, W., Plessi, S., Podrecca, D., Poerio, V., Poggiani, F., Pogliani, W., Poli, L., Poloni, F. G., Porcelli, R., Porto, S., Pranzo, L., Prevedello, C., Profeta, C., Profico, D., Punzi, A., Quaglia, G. M., Racano, M., Raccone, A., Radice, F., Raho, C. A., Raimondi, R., Raino, M., Ramponi, R., Ramunni, A., Ramunni, A. L., Ravasio, F., Ravera, M., Re Sarto, G., Rebustello, G., Regazzoli, S., Restelli, C., Rezzonico, M., Ricchiuto, F., Rigo, S., Rigon, G., Rigon, R., Rinaldi, O. V., Rinaldi, M., Risplendente, P. G., Rispoli, M., Riundi, R., Riva, M. G., Rizzi, A. L., Rizzi, D., Rizzo, L. D., Rocchi, L., Rondinone, B., Rosa, B., Rosati, F., Roselli, F., Rossetti, A., Rossetti, C., Rossi, R., Rossi, P. R., Rossi, A., Rossi, C. L., Rossitto, A., Ruffini, R., Ruffo, A., Ruggio, S., Ruo, M., Russo, B., Russo, L., Russo, R., Russo, S., Russo, U., Russo, V., Ruta, G., Sacchi, F., Sacco Botto, F., Saia, A., Salladini, G., Salmoiraghi, S., Saluzzo, F., Salvatore, C., Salvatori, E., Salvio, G., Sandri, P., Sandrini, T., Sangermano, V., Santoni, N., Saracino, A. D., Saracino, A., Sarasin, P., Sardo Infirri, C., Sarri, B., Sartori, G., Sartori, N., Sauro, C., Scaglioni, M., Scalfi, C., Scamardella, A. M., Scandale, G., Scandone, L., Scannavini, G., Scarati, R., Scardi, A., Scarpa, F. M., Scazzi, P., Schifone, A., Schiroso, G., Scigliano, G., Scilla, A., Sciortino, M., Scolaro, G., Scollo, E., Scorretti, G., Sellitti, R., Selmo, A., Selvaggio, G., Sempio, A., Seren, F., Serio, L., Serra, C., Serra, L., Siciliano, D., Sideri, A., Sighele, M., Signore, R., Siliberto, F., Silvestro, M., Simioni, G., Simmini, G., Simonato, L., Sinchetto, F., Sizzano, E., Smajato, G., Smaldone, M., Sola, G., Sordillo, L., Sovran, C. 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Subjects
Male, medicine.medical_specialty, Endocrinology, Diabetes and Metabolism, Population, 030209 endocrinology & metabolism, 030204 cardiovascular system & hematology, Overweight, 03 medical and health sciences, 0302 clinical medicine, Endocrinology, Prediction model, Internal medicine, Diabetes mellitus, Internal Medicine, Diabetes Mellitus, Medicine, Humans, Multicenter Studies as Topic, Myocardial infarction, Risk factor, education, Stroke, Aged, Randomized Controlled Trials as Topic, education.field_of_study, Lifestyle habits, business.industry, Major cardiovascular events, Atrial fibrillation, General Medicine, Middle Aged, medicine.disease, Cardiovascular Diseases, Heart failure, Physical therapy, Female, medicine.symptom, business, Diabetic Angiopathies
Abstract

To verify whether it is possible, in people with diabetes mellitus (DM) considered at very high cardiovascular (CV) risk, stratify this risk better and identify significant modifiable risk factor (including lifestyle habits) to help patients and clinicians improve CV prevention. People with DM and microvascular diseases or one or more CV risk factors (hypertension, hyperlipidemia, smoking, poor dietary habits, overweight, physical inactivity) included in the Risk and Prevention study were selected. We considered the combined endpoint of non-fatal acute myocardial infarction and stroke and CV death. A multivariate Cox proportional analysis was carried out to identify relevant predictors. We also used the RECPAM method to identify subgroups of patients at higher risk. In our study, the rate of major CV events was lower than expected (5 % in 5 years). Predictors of CV events were age, male, sex, heart failure, previous atherosclerotic disease, atrial fibrillation, insulin treatment, high HbA1c, heart rate and other CV diseases while being physically active was protective. RECPAM analysis indicated that history of atherosclerotic diseases and a low BMI defined worse prognosis (HR 4.51 95 % CI 3.04–6.69). Among subjects with no previous atherosclerotic disease, men with HbA1c more than 8 % were at higher CV risk (HR 2.77; 95 % CI 1.86–4.14) with respect to women. In this population, the rate of major CV events was lower than expected. This prediction model could help clinicians identify people with DM at higher CV risk and support them in achieving goals of physical activity and HbA1c.

Published
2016

26. Near-field speckle imaging of light localization in disordered photonic systems

Author

Caselli, N., Intonti, F., La China, F., Biccari, F., Riboli, F., Gerardino, A., Li, L., Linfield, E.H., Pagliano, F., Fiore, A., Gurioli, M., Caselli, N., Intonti, F., La China, F., Biccari, F., Riboli, F., Gerardino, A., Li, L., Linfield, E.H., Pagliano, F., Fiore, A., and Gurioli, M.

Abstract

Optical localization in strongly disordered photonic media is an attractive topic for proposing novel cavity-like structures. Light interference can produce random modes confined within small volumes, whose spatial distribution in the near-field is predicted to show hot spots at the nanoscale. However, these near-field speckles have not yet been experimentally investigated due to the lack of a high spatial resolution imaging techniques. Here, we study a system where the disorder is induced by random drilling air holes in a GaAs suspended membrane with internal InAs quantum dots. We perform deep-subwavelength near-field experiments in the telecom window to directly image the spatial distribution of the electric field intensity of disordered-induced localized optical modes. We retrieve the near-field speckle patterns that extend over few micrometers and show several single speckles of the order of λ/10 size. The results are compared with the numerical calculations and with the recent findings in the literature of disordered media. Notably, the hot spots of random modes are found in proximity of the air holes of the disordered system.

Published
2017

27. Temperature activated coupling in topologically distinct semiconductor nanostructures

Author

Biccari, F, Bietti, S, Cavigli, L, Vinattieri, A, Nötzel, R, Gurioli, M, Sanguinetti, S, BIETTI, SERGIO, SANGUINETTI, STEFANO, Biccari, F, Bietti, S, Cavigli, L, Vinattieri, A, Nötzel, R, Gurioli, M, Sanguinetti, S, BIETTI, SERGIO, and SANGUINETTI, STEFANO

Abstract

We present a detailed analysis of the emission of individual GaAs/AlGaAs complex nano-systems composed of two concentric and topologically distinct quantum nanostructures, namely, a quantum dot and a quantum ring. Time resolved, temperature and excitation power density dependence of the photoluminescence from single and ensemble dot/ring structures have been used in order to determine the carrier dynamics. Despite the small spatial separation between the dot and the ring, the exciton dynamics in the two nanostructures is completely decoupled at low temperatures. At higher temperatures, we observe a clear change in the carrier dynamics, which shows the onset of the coupling between the two nanostructures. We attribute such change in carrier dynamics to the breaking of topology induced selection rules which allows the transfer of the carriers between the dot and the ring via an electronic quantum state, common to the two nanostructures.

Published
2016

28. N-3 fatty acids in patients with multiple cardiovascular risk factors

Author

Roncaglioni, Maria Carla, Avanzini, Fausto, Barlera, Simona, Marzona, Irene, Milani, Valentina, Tombesi, Massimo, Caimi, Vittorio, Longoni, Paolo, Silletta, Maria Giuseppina, Tognoni, Gianni, Marchioli, Avanzini F, Roberto., Caimi, V, Longoni, P, Marchioli, R, Roncaglioni, Mc, Silletta, Mg, Tognoni, G, Tombesi, M, Barlera, S, Milani, V, Nicolis, Eb, Casola, C, Marzona, I, Massa, E, Marrocco, W, Micalella, M, Avanzini, F, Franzosi, Mg, Geraci, E, Giansiracusa, N, Rocchetti, L, Decarli, A, Satolli, R, Alli, C, Beghi, E, Bertele', V, Volpi, A, Baviera, M, Monesi, L, Pangrazzi, I, Nicolis, E, Clerici, F, Palumbo, A, Sgaroni, G, Pioggiarella, R, Scarano, M, Marfisi, Rm, Flamminio, A, Macino, L, Ferri, B, Pera, C, Polidoro, A, Abbatino, D, Acquati, M, Addorisio, G, Adinolfi, D, Adreani, L, Agistri, Mr, Agneta, A, Agnolio, Ml, Agostini, N, Agostino, G, Airò, A, Alaimo, N, Albano, M, Albano, N, Alecci, G, Alemanno, S, Alexanian, A, Alfarano, M, Alfè, L, Alonzo, N, Alvino, S, Ancora, A, Andiloro, S, Andreatta, E, Angeli, S, Angiari, F, Angilletti, V, Annicchiarico, C, Anzivino, M, Aprea, R, Aprile, A, Aprile, E, Aprile, I, Aprile, L, Armellani, V, Arnetoli, M, Aronica, A, Autiero, V, Bacca, G, Baccalaro, Am, Bacci, M, Baglio, G, Bagnani, M, Baiano, A, Baldari, A, Ballarini, L, Banchi, G, Bandera, R, Bandini, F, Baratella, M, Barbieri, A, Barbieri Vita, A, Bardi, M, Barlocchi, M, Baron, P, Bartoli, M, Basile, A, Basile, F, Basile, S, Battaggia, A, Battaglia, A, Baù, A, Beconcini, G, Beggio, R, Belfiore, Pa, Belicchi, M, Bellamoli, S, Bellini, C, Bellomo, M, Benetollo, C, Benetti, R, Beretta, E, Bertalero, P, Bertaso, Fg, Bertolani, U, Bettelli, G, Biagiotti, G, Bianchi, S, Bianco, G, Biccari, F, Bigioli, F, Bindi, M, Bisanti, G, Bitetti, Em, Blasetti, Mp, Blesi, F, Boato, V, Boga, S, Boidi, E, Boldrin, G, Bollati, A, Bolzan, L, Bolzonella, S, Bonardi, P, Bonato, Gb, Bonci, M, Bonfitto, G, Bonincontro, E, Boninsegna, F, Bonissone, D, Bono, L, Bonollo, E, Borghi, M, 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Ianiro, G, Iarussi, V, Ieluzzi, Ml, Ierardi, C, Ingaldi, F, Interlandi, S, Iocca, M, Iorno, A, Ioverno, E, Iurato, R, La Pace, L, La Piscopia, C, La Selva, R, Lafratta, M, Lamparelli, M, Lanaro, G, Lancerotto, R, Larcher, M, Lassandro, M, Lattuada, G, Laurino, P, Lefons, C, Legrottaglie, F, Lemma, A, Leone, D, Leone, F, Leso, A, Leuzzi, G, Levato, G, Libardi, L, Libralesso, N, Licini, Pi, Licursi, G, Lidonnici, F, Lillo, C, Liveri, L, Livio, A, Loiero, Ra, Loison, M, Lombardo, G, Lombardo, T, Lomunno, V, Lomuscio, S, Lonedo, A, Longo, E, Lora, L, Lotterio, A, Lucatello, L, Luongo, A, Lupoli, M, Macchia, C, Macri, G, Mafessanti, M, Maggialetti, V, Maggioni, A, Magnani, M, Maiellaro, G, Mancuso, A, Maniglio, Ar, Mannari, Gl, Manni, A, Manocchio, B, Mao, M, Maranò, A, Maraone, E, Marascio, D, Marcheselli, P, Marchetto, B, Marchetto, S, Marchi, A, Marchi, Gl, Mariano, C, Marinacci, S, Marinelli, S, Marini, G, Marra, Vc, Marrali, F, Marseglia, C, Martello, G, Martino, C, Martino, G, Martino, M, Marulli, Cf, Maruzzi, G, Marzotti, A, Mascheroni, G, Mascolo, P, Masoch, G, Masone, R, Massa, L, Massafra, M, Massi, M, Massignani, Dm, Matarese, Am, Matini, G, Mauro, R, Mazzi, M, Mazzillo, A, Mazzocato, E, Mazzoleni, Ns, Mazzone, A, Melacci, A, Mele, E, Meliota, P, Menaspà, S, Meneghello, F, Merola, G, Merone, L, Metrucci, A, Mezzina, V, Micchi, A, Michielon, A, Migliore, N, Minero, G, Minotta, F, Mirandola, C, Mistrorigo, S, Modafferi, L, Moitre, R, Mola, E, Monachese, C, Mongiardini, C, Montagna, F, Montani, M, Montemurno, I, Montolli, R, Montorsi, S, Montresor, M, Monzani, Mg, Morabito, F, Mori, G, Moro, A, Mosca, Mf, Motti, F, Muddolon, L, Mugnai, M, Muscas, F, Naimoli, F, Nanci, G, Nargi, E, Nasorri, R, Nastrini, G, Negossi, M, Negrini, A, Negroni, A, Neola, V, Niccolini, F, Niro, Cm, Nosengo, C, Novella, G, Nuti, C, Obici, F, Olita, C, Oliverio, Ss, Olivieri, I, Oriente, S, Orlando, G, Paci, C, Pagano, G, Pagliara, C, Paita, G, Paladini, G, Paladino, G, Palano, T, Palatella, A, Palermo, P, Palmisano, M, Pando, P, Panessa, P, Panigo, F, Panozzo, G, Panvini, F, Panzieri, F, Panzino, A, Panzitta, F, Paoli, N, Papagna, R, Papaleo, Mg, Papalia, G, Parisi, R, Parotti, N, Parravicini, D, Passarella, P, Pastore, Ga, Patafio, M, Pavone, P, Pedroli, W, Pedroni, M, Pelligra, G, Pellizzari, M, Penati, A, Perlot, M, Perrone, A, Perrone, G, Peruzzi, P, Peselli, C, Petracchini, L, Petrera, L, Petrone, S, Peverelli, C, Pianorsi, F, Piazza, Gp, Piazzolla, G, Picci, A, Pienabarca, G, Pietronigro, Tp, Pignocchino, P, Pilone, R, Pinto, D, Pirovano, E, Pirrotta, D, Pisante, V, Pitotto, P, Pittari, L, Piva, A, Pizzoglio, A, Plantera, Or, Plebani, W, Plessi, S, Podrecca, D, Poerio, V, Poggiani, F, Pogliani, W, Poli, L, Poloni, Fg, Porcelli, R, Porto, S, Pranzo, L, Prevedello, C, Profeta, C, Profico, D, Punzi, A, Quaglia, Gm, Racano, M, Raccone, A, Radice, F, Raho, Ca, Raimondi, R, Rainò, M, Ramponi, R, Ramunni, A, Ramunni, Al, Ravasio, F, Ravera, M, Re Sartò, G, Rebustello, G, Regazzoli, S, Restelli, C, Rezzonico, M, Ricchiuto, F, Rigo, S, Rigon, G, Rigon, R, Rinaldi, Ov, Rinaldi, M, Risplendente, Pg, Rispoli, M, Riundi, R, Riva, Mg, Rizzi, Al, Rizzi, D, Rizzo, Ld, Rocchi, L, Rondinone, B, Rosa, B, Rosati, F, Roselli, F, Rossetti, A, Rossetti, C, Rossi, R, Rossi, Pr, Rossi, A, Rossi, Cl, Rossitto, A, Ruffini, R, Ruffo, A, Ruggio, S, Ruo, M, Russo, B, Russo, L, Russo, R, Russo, S, Russo, U, Russo, V, Ruta, G, Sacchi, F, Sacco Botto, F, Saia, A, Salladini, G, Salmoiraghi, S, Saluzzo, F, Salvatore, C, Salvatori, E, Salvio, G, Sandri, P, Sandrini, T, Sangermano, V, Santoni, N, Saracino, Ad, Saracino, A, Sarasin, P, Sardo Infirri, C, Sarrì, B, Sartori, G, Sartori, N, Sauro, C, Scaglioni, M, Scalfi, C, Scamardella, Am, Scandale, G, Scandone, L, Scannavini, G, Scarati, R, Scardi, A, Scarpa, Fm, Scazzi, P, Schifone, A, Schirosa, G, Scigliano, G, Scilla, A, Sciortino, M, Scolaro, G, Scollo, E, Scorretti, G, Sellitti, R, Selmo, A, Selvaggio, G, Sempio, A, Seren, F, Serio, L, Serra, C, Serra, L, Siciliano, D, Sideri, A, Sighele, M, Signore, R, Siliberto, F, Silvestro, M, Simioni, G, Simmini, G, Simonato, L, Sinchetto, F, Sizzano, E, Smajato, G, Smaldone, M, Sola, G, Sordillo, L, Sovran, Cs, Spagnul, P, Spanò, F, Sproviero, S, Squintani, A, Stella, L, Stilo, V, Stocchiero, B, Stornello, Mc, Stracka, G, Strada, S, Stranieri, G, Stucci, N, Stufano, N, Suppa, A, Susca, Vg, Sutti, M, Taddei, M, Tagliabue, E, Tagliente, G, Talato, F, Talerico, P, Talia, R, Taranto, R, Tartaglia, M, Tauro, N, Tedesco, A, Tieri, P, Tirelli, M, Tocci, L, Todesco, P, Tognolo, M, Tomba, A, Tonello, P, Tonon, R, Toscano, L, Tosi, A, Tosi, G, Toso, S, Travaglio, P, Tremul, L, Tresso, C, Triacchini, P, Triggiano, L, Trigilio, A, Trimeloni, J, Tripicchio, G, Tritto, Gs, Trono, F, Trotta, E, Trotta, G, Tubertini, A, Turri, C, Turri, L, Tuttolani, Mp, Urago, M, Ursini, G, Valcanover, F, Valente, L, Valenti, M, Valentini, F, Vallone, G, Valz, P, Valzano, L, Vanin, V, Vatteroni, M, Vegetti, L, Vendrame, D, Veramonti, I, Veronelli, G, Vesco, A, Vicariotto, G, Vignale, G, Villa, Pl, Vinciguerra, R, Visco, A, Visentin, G, Visonà, E, Vitali, E, Vitali, S, Vitti, F, Volpone, Da, Zambon, N, Zammarrelli, A, Zanaboni, A, Zane, D, Zanetti, B, Zanibellato, R, Zappetti, M, Zappone, P, Zerilli, G, Zirino, V, Zoccali, R, Zuin, F, Altomonte, M, Anelli, N, Angiò, F, Annale, P, Antonacci, S, Anzilotta, R, Bano, F, Basadonna, O, Beduschi, L, Becagli, P, Bellotti, G, Blotta, C, Bruno, G, Cappuccini, A, Caramatti, S, Cariolato, Mp, Castellana, M, Castellani, L, Catania, R, Chielli, A, Chinellato, A, Ciaccia, A, Clerici, E, Cocci, A, Costanzo, G, D'Ercole, F, De Stefano, G, Decè, F, Di Cicco, N, Di Marco, A, Donati Sarti, C, Draghi, E, Dusi, G, Esposito, V, Ferraro, L, Ferretti, A, Ferri, E, Foggetti, L, Foglia, A, Fonzi, E, Frau, G, Fuoco, Mr, Furci, G, Gallo, L, Garra, V, Giannini, A, Gris, A, Iacovino, R, Interrigi, R, Joppi, R, Laner, B, La Fortezza, G, La Padula, A, Lista, Mr, Lupi, G, Maffei, D, Maggioni, G, Magnani, L, Marrazzo, E, Marcon, L, Marinò, V, Maroni, A, Martinelli, C, Mastandrea, E, Mastropierro, F, Meo, At, Mero, P, Minesso, E, Moschetta, V, Mosele, E, Nanni, C, Negretti, A, Nisticò, C, Orsini, A, Osti, M, Pacilli, Mc, Pennestre, C, Picerno, G, Piol, K, Pivano, L, Pizzuti, E, Poggi, L, Poidomani, I, Pozzetto, M, Presti, Ml, Ravani, R, Recalenda, V, Romagnuolo, F, Rossignoli, S, Rossin, E, Sabatella, C, Sacco, F, Sanità, F, Sansone, E, Servadei, F, Sisto, Mt, Sorio, A, Sorrentino, A, Spinelli, E, Spolaor, A, Squillacioti, A, Stella, P, Talerico, A, Todisco, C, Vadino, M, and Zuliani, C.

Subjects
Male, medicine.medical_specialty, General Practice, Kaplan-Meier Estimate, Placebo, Double-Blind Method, Risk Factors, Internal medicine, Fatty Acids, Omega-3, Clinical endpoint, medicine, Humans, Myocardial infarction, Treatment Failure, Aged, Proportional Hazards Models, chemistry.chemical_classification, Omega-3, business.industry, Proportional hazards model, Medicine (all), Hazard ratio, Fatty Acids, General Medicine, Middle Aged, medicine.disease, Hospitalization, Primary Prevention, chemistry, Cardiovascular Diseases, Heart failure, Cohort, Female, business, Polyunsaturated fatty acid
Abstract

Background Trials have shown a beneficial effect of n-3 polyunsaturated fatty acids in patients with a previous myocardial infarction or heart failure. We evaluated the potential benefit of such therapy in patients with multiple cardiovascular risk factors or atherosclerotic vascular disease who had not had a myocardial infarction. Methods In this double-blind, placebo-controlled clinical trial, we enrolled a cohort of patients who were followed by a network of 860 general practitioners in Italy. Eligible patients were men and women with multiple cardiovascular risk factors or atherosclerotic vascular disease but not myocardial infarction. Patients were randomly assigned to n-3 fatty acids (1 g daily) or placebo (olive oil). The initially specified primary end point was the cumulative rate of death, nonfatal myocardial infarction, and nonfatal stroke. At 1 year, after the event rate was found to be lower than anticipated, the primary end point was revised as time to death from cardiovascular causes or admission to the hospital for cardiovascular causes. Results Of the 12,513 patients enrolled, 6244 were randomly assigned to n-3 fatty acids and 6269 to placebo. With a median of 5 years of follow-up, the primary end point occurred in 1478 of 12,505 patients included in the analysis (11.8%), of whom 733 of 6239 (11.7%) had received n-3 fatty acids and 745 of 6266 (11.9%) had received placebo (adjusted hazard ratio with n-3 fatty acids, 0.97; 95% confidence interval, 0.88 to 1.08; P=0.58). The same null results were observed for all the secondary end points. Conclusions In a large general-practice cohort of patients with multiple cardiovascular risk factors, daily treatment with n-3 fatty acids did not reduce cardiovascular mortality and morbidity. (Funded by Societa Prodotti Antibiotici and others; ClinicalTrials.gov number, NCT00317707.).

Published
2013

29. Study of CZTS Solar Cells Obtained from Two Different Types of Precursors

Author

Valentini, M., Malerba, C., Biccari, F., Salza, E., Santoni, A., Azanza Ricardo, C.L., Scardi, P., and Mittiga, A.

Subjects
THIN FILM SOLAR CELLS, CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells
Abstract

28th European Photovoltaic Solar Energy Conference and Exhibition; 2459-2462, Cu2ZnSnS4 (CZTS) thin films with appropriate composition, good homogeneity and large grain size are crucial to obtain high efficiency devices. In this work CZTS thin films are grown by two-steps processes, which consist in the precursor deposition, followed by a thermal treatment. Different CZTS thin films were obtained starting from both e-beam evaporated ZnS/Sn/Cu stacked layers and co-sputtered metal sulfides precursors. A first comparison of these two different growth processes is made looking at the final CZTS films morphology, microstructure and optical properties. Further information on the optoelectronic properties of CZTS is obtained analyzing the J-V characteristics and the External Quantum Efficiency of the final PV devices. The better homogeneity and reproducibility of the process based on co-sputtered precursors allowed to fabricate a CZTS solar cell with a conversion efficiency of 5.7%.

Published
2013
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30. Growth and Characterization of Cu2ZnSnS4 Thin Films Prepared by Sulfurization of Evaporated Precursors

Author

Valentini, M., Biccari, F., Chierchia, R., Mangiapane, P., Salza, E., and Mittiga, A.

Subjects
CIS and Related Ternary and Quaternary Thin Film Solar Cells, Thin Film Solar Cells
Abstract

26th European Photovoltaic Solar Energy Conference and Exhibition; 2911-2915, Cu2ZnSnS4 (CZTS) is considered a promising alternative to the well developed Cu(In,Ga)Se2 which contains materials such as In and Ga, expensive and with a limited availability. The best solar cell based on CZTS has recently reached a conversion efficiency of 6.8% but the material quality still needs to be improved. In this work we prepare the CZTS films by sulfurization of precursors composed by a multilayer of ZnS, Sn and Cu grown by evaporation. Precursors with different composition, order of the layers and different sulfurization temperatures are tested in order to optimize the film quality. The composition and the structural properties of the CZTS films are characterized by XRD, SEM-EDS and Raman spectroscopy. The samples are further characterized by transmittance and reflectance measurements in order to obtain an estimate of the absorption coefficient. We find that the absorption coefficient at low energies increases with increasing Zn content and with increasing sulfurization temperature. These trends are explained in term of an increase of the disorder in the material.

Published
2011
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31. GaAs nanostructures on Si platform

Author

Sanguinetti, S, Bietti, S, Scarpellini, D, Ballabio, A, Miglio, L, Isella, G, Esposito, L, Frigerio, J, Fedorov, A, Gurioli, M, Biccari, F, Abbarchi, M, Vinattieri, A, Vinattieri,A, Sanguinetti, S, Bietti, S, Scarpellini, D, Ballabio, A, Miglio, L, Isella, G, Esposito, L, Frigerio, J, Fedorov, A, Gurioli, M, Biccari, F, Abbarchi, M, Vinattieri, A, and Vinattieri,A

Abstract

Effective monolithic integration strategies for high quality quantum III-V nanostructure fabrication on Si will be introduced. The methodologies presented range from ultrathin planar Ge virtual substrates for the integration of single photon emitters with high temperature stability to advanced three-dimensional Ge growths strategies.

Published
2015

32. Germanium-based quantum emitters towards a time-reordering entanglement scheme with degenerate exciton and biexciton states

Author

Dotti, N, Sarti, F, Bietti, S, Azarov, A, Kuznetsov, A, Biccari, F, Vinattieri, A, Sanguinetti, S, Abbarchi, M, Gurioli, M, Gurioli, M., BIETTI, SERGIO, SANGUINETTI, STEFANO, Dotti, N, Sarti, F, Bietti, S, Azarov, A, Kuznetsov, A, Biccari, F, Vinattieri, A, Sanguinetti, S, Abbarchi, M, Gurioli, M, Gurioli, M., BIETTI, SERGIO, and SANGUINETTI, STEFANO

Abstract

We address the radiative emission of individual germanium extrinsic centers in Al0.3Ga0.7As epilayers grown on germanium substrates. Microphotoluminescence experiments demonstrate the capability of high temperature emission (70 K) and complex exciton configurations (neutral exciton X and biexciton XX, positive X+ and negative X- charged excitons) of these quantum emitters. Finally, we investigate the renormalization of each energy level showing a large and systematic change of the binding energy of XX and X+ from positive to negative values (from ∼+5 meV up to ∼-7 meV covering ∼70 meV of the emission energy) with increasing quantum confinement. These light emitters, grown on a silicon substrate, may exhibit energy-degenerate X and XX energy levels. Furthermore, they emit at the highest detection efficiency window of Si-based single-photon detectors. These features render them a promising device platform for the generation of entangled photons in the time-reordering scheme.

Published
2015

33. GaAs nanostructures on Si platform

Author

Sanguinetti, S., primary, Bietti, S., additional, Scarpellini, D., additional, Ballabio, A., additional, Miglio, L., additional, Isella, G., additional, Esposito, L., additional, Frigerio, J., additional, Fedorov, A., additional, Gurioli, M., additional, Biccari, F., additional, Abbarchi, M., additional, and Vinattieri, A., additional

Published
2015
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34. Metastability Effects in Cu2O Solar Cells

Author

Biccari, F., Malerba, C., and Mittiga, A.

Subjects
Advanced Photovoltaics, New Types of Cells and Modules
Abstract

23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain; 583-587, Cu2O based junctions exhibit several metastable effects upon illumination or reverse bias application. We show that these effects are related to the persistent photoconductivity in Cu2O substrates. We have investigated these phenomena measuring conductivity vs temperature, persistent photoconductivity decay, Capacitance-Voltage and capacitance transients at different temperatures. We show that it is impossible to explain these data using an electronic mechanism only. A new model which includes the formation-dissociation of intrinsic defect complexes (VCu-VO) can give instead a better agreement with the experimental data.

Published
2008
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36. Valence band offset at the CdS/Cu2ZnSnS4 interface probed by x-ray photoelectron spectroscopy.

Author

Santoni, A., Biccari, F., Malerba, C., Valentini, M., Chierchia, R., and Mittiga, A.

Subjects
*VALENCE bands, *CADMIUM sulfide, *SPECTRUM analysis, *SOLAR cells, *ELECTRIC conductivity research
Abstract

The valence band offset (VBO) at the interface CdS/Cu2ZnSnS4 was investigated by x-ray photoelectron spectroscopy (XPS). The VBO was measured by two different procedures: an indirect method involving the measurements of the core levels together with the XPS bulk valence band (VB) spectra and a direct method involving the analysis of XPS VB spectra at the interface. The indirect method resulted in a VBO value of (-1.20 ± 0.14) eV while the direct method returned a similar value of (-1.24 ± 0.06) eV but affected by a lower uncertainty. The conduction band offset (CBO) was calculated from the measured VBO values. These two measured values of the VBO allowed us to calculate the CBO, giving (-0.30 ± 0.14) eV and (-0.34 ± 0.06) eV, respectively. These values show that the CBO has a cliff-like behaviour which could be one of the reasons for the Voc limitation in the CdS/CZTS solar cells. [ABSTRACT FROM AUTHOR]

Published
2013
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37. Photonic Jet Writing of Quantum Dots Self-Aligned to Dielectric Microspheres

Author

Stefano Sanguinetti, Marco Felici, Hooman Mohseni, Andrea Ristori, Travis Hamilton, Francesco Biccari, Dimosthenis Toliopoulos, Massimo Gurioli, Giorgio Pettinari, Ristori, A, Hamilton, T, Toliopoulos, D, Felici, M, Pettinari, G, Sanguinetti, S, Gurioli, M, Mohseni, H, and Biccari, F

Subjects
Nuclear and High Energy Physics, Materials science, collection enhancement, site-controlled quantum dot, 02 engineering and technology, Dielectric, 01 natural sciences, Microsphere, photonic jet, 0103 physical sciences, Electrical and Electronic Engineering, 010306 general physics, Mathematical Physics, Jet (fluid), business.industry, Statistical and Nonlinear Physics, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, dilute nitride, Computational Theory and Mathematics, Quantum dot, microsphere, Optoelectronics, Photonics, 0210 nano-technology, business, dilute nitrides, microspheres, photonic jets, site-controlled quantum dots
Abstract

Owing to their ability to generate non-classical light states, quantum dots (QDs) are very promising candidates for the large-scale implementation of quantum information technologies. However, the high photon collection efficiency demanded by these technologies may be impossible to reach for “standalone” semiconductor QDs, embedded in a high-refractive index medium. In this work a novel laser writing technique is presented, enabling the direct fabrication of a QD self-aligned—with a precision of ±30 nm—to a dielectric microsphere. The presence of the microsphere leads to an enhancement of the QD luminescence collection by a factor 7.3 ± 0.7 when an objective with 0.7 numerical aperture is employed. This technique exploits the possibility of breaking the N−H bonds in GaAs (Formula presented.) Nx:H by a laser light, obtaining a lower-bandgap material, GaAs (Formula presented.) Nx. The microsphere, deposited on top of a GaAs (Formula presented.) Nx:H/GaAs quantum well, is used to generate a photonic nanojet, which removes hydrogen exactly below the microsphere, creating a GaAs (Formula presented.) Nx QD at a predefined distance from the sample surface. Second-order autocorrelation measurements confirm the ability of the QDs obtained with this technique to emit singlephotons.

Published
2021

38. Quantum Dots Luminescence Collection Enhancement and Nanoscopy by Dielectric Microspheres

Author

Francesco Biccari, Massimo Gurioli, Travis Hamilton, Hooman Mohseni, Sergio Bietti, Stefano Sanguinetti, Andrea Ristori, Biccari, F, Hamilton, T, Ristori, A, Sanguinetti, S, Bietti, S, Gurioli, M, and Mohseni, H

Subjects
Materials science, Photoluminescence, business.industry, near field, Near and far field, General Chemistry, Dielectric, Photonic nanojet, Condensed Matter Physics, Microsphere, Quantum dot, photonic nanojet, microsphere, Optoelectronics, General Materials Science, photoluminescence, business, Luminescence, FIS/03 - FISICA DELLA MATERIA
Abstract

In recent years, dielectric microspheres have been used in conjunction with optical microscopes to beat the diffraction limit and to obtain superresolution imaging. The use of microspheres on quantum dots (QDs) is investigated, for the first time, to enhance the light coupling efficiency. The enhancement of the QD luminescence collection in terms of extraction and directionality is demonstrated, as well as the enhancement of spatial resolution. In particular, it is found that a dielectric microsphere, placed on top of an epitaxial QD, increases the collected radiant energy by about a factor of 42, when a low numerical aperture objective is used. Moreover, if two or more QDs are present below the microsphere, the modification of the far field emission pattern allows selective collection of the luminescence from a single QD by simply changing the collection angle. Dielectric microspheres present a simple and efficient tool to improve the QD spectroscopy, and potentially QD-based devices.

Published
2020

39. CZTS stoichiometry effects on the band gap energy

Author

Melanie Müller, E. Esposito, Francesco Biccari, Claudia Malerba, P. Mangiapane, Rosa Chierchia, A. Santoni, M. Valentini, Paolo Scardi, Alberto Mittiga, Cristy Leonor Azanza Ricardo, Mangiapane, P., Esposito, E., Santoni, A., Chierchia, R., Valentini, M., Ricardo, C. L. A., Biccari, F., Malerba, C., and Mittiga, A.

Subjects
Materials science, CZTS, Kesterite, Stoichiometry, Optical properties, Defects, Band gap, Analytical chemistry, chemistry.chemical_element, engineering.material, chemistry.chemical_compound, symbols.namesake, X-ray photoelectron spectroscopy, Materials Chemistry, Spectroscopy, Absorption (electromagnetic radiation), Mechanical Engineering, Metals and Alloys, Optical propertie, chemistry, Mechanics of Materials, engineering, symbols, Defect, Tin, Raman spectroscopy
Abstract

The considerable spread of Cu2ZnSnS4 (CZTS) optical properties reported in the literature is discussed in terms of material stoichiometry. To this purpose, kesterite thin films were prepared by sulfurization of multilayered precursors of ZnS, Cu and Sn, changing the relative amounts to obtain CZTS layers with different compositions. X-Ray Diffraction (XRD), Energy Dispersive X-Ray (EDX) spectroscopy, X-Ray Photoelectron Spectroscopy (XPS) and Raman spectroscopy were used for structural and compositional analysis. XRD quantitative phase analysis provides the amount of spurious phases and information on Sn-site occupancy. The optical properties were investigated by spectrophotometric and Photothermal Deflection Spectroscopy (PDS) measurements to assess the absorption coefficient of samples with different compositions. The PDS data show an increase of the sub-band absorption as the Sn content decreases. The results are interpreted assuming the formation of additional defects as the tin content is reduced. Those defects can also be responsible for the decrease of the band gap energy value as the Sn/Cu ratio is decreased. © 2013 Elsevier B.V. All rights reserved.

Published
2014
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40. Site-controlled natural GaAs(111) quantum dots fabricated on vertical GaAs/Ge microcrystals on deeply patterned Si(001) substrates

Author

Stefano Sanguinetti, Leo Miglio, C. Mannucci, Sergio Bietti, Alexey Fedorov, Massimo Gurioli, Francesco Biccari, Anna Vinattieri, Alfonso G. Taboada, Andrea Ballabio, H. von Känel, Giovanni Isella, Luca Esposito, Biccari, F, Esposito, L, Mannucci, C, Taboada, A, Bietti, S, Ballabio, A, Fedorov, A, Isella, G, Von Känel, H, Miglio, L, Sanguinetti, S, Vinattieri, A, and Gurioli, M

Subjects
0301 basic medicine, Materials science, patterning, business.industry, Quantum Dot, Defect free, GaAs/Si Integration, Micro photoluminescence, 03 medical and health sciences, 030104 developmental biology, Quantum dot, Quantum Dots, Optoelectronics, micro photoluminescence, GaAs(111) Substrates, General Materials Science, Materials Science (all), Defect Free, business
Abstract

Semiconductor quantum dots (QDs), made of III-V semiconductors alloys, have attracted increasing interest in the last two decades, especially for their possible usage in quantum information technology. However, for such advanced applications, the requisite control of the QD's position cannot be achieved by the conventional growth techniques. Moreover, silicon (Si) dominates the microelectronic technology but its use is limited for optoelectronic applications due to its indirect bandgap. Therefore, the possibility to integrate QDs made of III-V alloys on a Si-based platform and circuitry is of the utmost importance. However, this is hindered by the very different lattice constants and thermal expansion coefficients of Si and GaAs, which generate strain and defects. In this paper we overcome the mismatch problems using the self-limited growth of germanium on micro-patterned (001) Si to obtain a relaxed GaAs(111) oriented epilayer for the subsequent heteroepitaxy of III-V nanostructures. In particular we optically characterize a stack of three GaAs/AlGaAs quantum wells (QWs) grown on top of the Si/Ge pillars. We provide clear evidence of the presence of naturally formed QDs, due to QW thickness fluctuations, and their position control with micrometer resolution, given by the pillar distance.

Published
2017
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41. Germanium-based quantum emitters towards a time-reordering entanglement scheme with degenerate exciton and biexciton states

Author

Andrej Yu. Kuznetsov, Stefano Sanguinetti, Massimo Gurioli, Francesco Sarti, Anna Vinattieri, Sergio Bietti, Alexander Azarov, Francesco Biccari, Marco Abbarchi, Nicola Dotti, Dotti, N, Sarti, F, Bietti, S, Azarov, A, Kuznetsov, A, Biccari, F, Vinattieri, A, Sanguinetti, S, Abbarchi, M, and Gurioli, M

Subjects
Physics, Photoluminescence, Exciton, Binding energy, Degenerate energy levels, chemistry.chemical_element, Germanium, Condensed Matter Physic, Condensed Matter Physics, 7. Clean energy, Electronic, Optical and Magnetic Materials, chemistry, Quantum dot, Atomic physics, Biexciton, Energy (signal processing), FIS/03 - FISICA DELLA MATERIA
Abstract

We address the radiative emission of individual germanium extrinsic centers in ${\mathrm{Al}}_{0.3}{\mathrm{Ga}}_{0.7}\mathrm{As}$ epilayers grown on germanium substrates. Microphotoluminescence experiments demonstrate the capability of high temperature emission (70 K) and complex exciton configurations (neutral exciton $X$ and biexciton $XX$, positive ${X}^{+}$ and negative ${X}^{\ensuremath{-}}$ charged excitons) of these quantum emitters. Finally, we investigate the renormalization of each energy level showing a large and systematic change of the binding energy of $XX$ and ${X}^{+}$ from positive to negative values (from $\ensuremath{\sim}+5$ meV up to $\ensuremath{\sim}\ensuremath{-}7$ meV covering $\ensuremath{\sim}70$ meV of the emission energy) with increasing quantum confinement. These light emitters, grown on a silicon substrate, may exhibit energy-degenerate $X$ and $XX$ energy levels. Furthermore, they emit at the highest detection efficiency window of Si-based single-photon detectors. These features render them a promising device platform for the generation of entangled photons in the time-reordering scheme.

Published
2015

42. GaAs nanostructures on Si platform

Author

Leo Miglio, Stefano Sanguinetti, Francesco Biccari, Alexey Fedorov, Luca Esposito, David Scarpellini, M. Abbarchi, Sergio Bietti, Andrea Ballabio, Massimo Gurioli, Jacopo Frigerio, G. Isella, Anna Vinattieri, Sanguinetti, S, Bietti, S, Scarpellini, D, Ballabio, A, Miglio, L, Isella, G, Esposito, L, Frigerio, J, Fedorov, A, Gurioli, M, Biccari, F, Abbarchi, M, and Vinattieri, A

Subjects
III-V Nanostructure, Photon, Nanostructure, Materials science, Fabrication, Silicon, business.industry, Computer Networks and Communications, chemistry.chemical_element, Physics::Optics, Gallium arsenide, III-V Nanostructures, Molecular Beam Epitaxy, Silicon Integration, Single photon emission, Electrical and Electronic Engineering, chemistry.chemical_compound, chemistry, Quantum dot, Optoelectronics, Photonics, business, Molecular beam epitaxy
Abstract

Effective monolithic integration strategies for high quality quantum III-V nanostructure fabrication on Si will be introduced. The methodologies presented range from ultrathin planar Ge virtual substrates for the integration of single photon emitters with high temperature stability to advanced three-dimensional Ge growths strategies.

Published
2015

43. Stoichiometry effect on Cu2ZnSnS4 thin films morphological and optical properties

Author

Luca Rebuffi, Melanie Müller, Alberto Mittiga, Francesco Biccari, Claudia Malerba, Paolo Scardi, M. Valentini, P. Mangiapane, Cristy Leonor Azanza Ricardo, E. Esposito, Mittiga, A., Mangiapane, P., Esposito, E., Biccari, F., and Valentini, M.

Subjects
Materials science, Renewable Energy, Sustainability and the Environment, Scanning electron microscope, Band gap, Analytical chemistry, chemistry.chemical_element, Grain size, chemistry.chemical_compound, chemistry, CZTS, Thin film, Spectroscopy, Absorption (electromagnetic radiation), Tin
Abstract

Thin films of Cu2ZnSnS4 (CZTS) were prepared by sulfurization of multilayered precursors of ZnS, Cu, and Sn, changing the relative amounts to obtain CZTS layers with different compositions. X-Ray Diffraction (XRD), Energy Dispersive X-Ray spectroscopy, and SEM were used for structural, compositional, and morphological analyses, respectively. XRD quantitative phase analysis provides the amount of spurious phases and information on Sn-site occupancy. The optical properties were investigated by spectrophotometric measurements and Photothermal Deflection Spectroscopy. These films show a clear dependence of the optical and microstructural properties on the tin content. As the tin content increases we found: (i) an increase in both crystalline domain and grain size, (ii) an abrupt increase of the energy gap of about 150 meV, from 1.48 to 1.63 eV, and (iii) a decrease of sub-gap absorption up to two orders of magnitude. The results are interpreted assuming the formation of additional defects as the tin content is reduced. © 2014 AIP Publishing LLC.

Published
2014

44. Direct Determination of Carrier Parameters in Indium Tin Oxide Nanocrystals.

Author

Gabbani A, Della Latta E, Mohan A, Scarperi A, Li X, Ruggeri M, Martini F, Biccari F, Kociak M, Geppi M, Borsacchi S, and Pineider F

Abstract

We develop here a comprehensive experimental approach to independently determine charge carrier parameters, namely, carrier density and mass, in plasmonic indium tin oxide nanocrystals. Typically, in plasmonic nanocrystals, only the ratio between these two parameters is accessible through optical absorption experiments. The multitechnique methodology proposed here combines single particle and ensemble optical and magneto-optical spectroscopies, also using 119 Sn solid-state nuclear magnetic resonance spectroscopy to probe the surface depletion layer. Our methodology overcomes the limitations of standard fitting approaches based on absorption spectroscopy and ultimately gives access to carrier effective mass directly on the NCs, discarding the use of literature value based on bulk or thin film materials. We found that mass values depart appreciably from those measured on thin films; consequently, we found carrier density values that are different from reported literature values for similar systems. The effective mass was found to deviate from the parabolic approximation at a high carrier density. Finally, the dopant activation and defect diagram for ITO NCs for tin doping between 2.5 and 15% are determined. This approach can be generalized to other plasmonic heavily doped semiconductor nanostructures and represents, to the best of our knowledge, the only method to date to characterize the full Drude parameter space of 0-D nanosystems.

Published
2024
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45. Temperature-Dependent Amplified Spontaneous Emission in CsPbBr 3 Thin Films Deposited by Single-Step RF-Magnetron Sputtering.

Author

Morello G, Milanese S, De Giorgi ML, Calisi N, Caporali S, Biccari F, Falsini N, Vinattieri A, and Anni M

Abstract

Due to their high optical efficiency, low-cost fabrication and wide variety in composition and bandgap, halide perovskites are recognized nowadays as real contenders for the development of the next generation of optoelectronic devices, which, among others, often require high quality over large areas which is readily attainable by vacuum deposition. Here, we report the amplified spontaneous emission (ASE) properties of two CsPbBr 3 films obtained by single-step RF-magnetron sputtering from a target containing precursors with variable compositions. Both the samples show ASE over a broad range of temperatures from 10 K up to 270 K. The ASE threshold results strongly temperature dependent, with the best performance occurring at about 50 K (down to 100 µJ/cm 2 ), whereas at higher temperatures, there is evidence of thermally induced optical quenching. The observed temperature dependence is consistent with exciton detrapping up to about 50 K. At higher temperatures, progressive free exciton dissociation favors higher carrier mobility and increases trapping at defect states with consequent emission reduction and increased thresholds. The reported results open the way for effective large-area, high quality, organic solution-free deposited perovskite thin films for optoelectronic applications, with a remarkable capability to finely tune their physical properties.

Published
2023
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46. Tailoring the optical properties of dilute nitride semiconductors at the nanometer scale.

Author

Pettinari G, Marotta G, Biccari F, Polimeni A, and Felici M

Abstract

We report on the innovative approaches we developed for the fabrication of site-controlled semiconductor nanostructures [e.g. quantum dots (QDs), nanowires], based on the spatially selective incorporation and/or removal of hydrogen in dilute nitride semiconductor alloys [e.g. Ga(AsN) and (InGa)(AsN)]. In such systems, the formation of stable nitrogen-hydrogen complexes removes the effects nitrogen has on the alloy properties, which in turn paves the way to the direct engineering of the material's electronic-and, thus, optical-properties: not only the bandgap energy, but also the refractive index and the polarization properties of the system can indeed be tailored with high precision and in a reversible manner. Here, lithographic approaches and/or plasmon-assisted optical irradiation-coupled to the ultra-sharp diffusion profile of hydrogen in dilute nitrides-are employed to control the hydrogen implantation and/or removal process at a nanometer scale. This results in a highly deterministic control of the spatial and spectral properties of the fabricated nanostructures, eventually obtaining semiconductor nanowires with controlled polarization properties, as well as site-controlled QDs with an extremely high control on their spatial and spectral properties. The nanostructures fabricated with these techniques, whose optical properties have also been simulated by finite-element-method calculations, are naturally suited for a deterministic coupling in optical nanocavities (i.e. photonic crystal cavities and circular Bragg resonators) and are therefore of potential interest for emerging quantum technologies.

Published
2021
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47. Large-Area Nanocrystalline Caesium Lead Chloride Thin Films: A Focus on the Exciton Recombination Dynamics.

Author

Falsini N, Calisi N, Roini G, Ristori A, Biccari F, Scardi P, Barri C, Bollani M, Caporali S, and Vinattieri A

Abstract

Caesium lead halide perovskites were recently demonstrated to be a relevant class of semiconductors for photonics and optoelectronics. Unlike CsPbBr 3 and CsPbI 3 , the realization of high-quality thin films of CsPbCl 3 , particularly interesting for highly efficient white LEDs when coupled to converting phosphors, is still a very demanding task. In this work we report the first successful deposition of nanocrystalline CsPbCl 3 thin films (70-150 nm) by radio frequency magnetron sputtering on large-area substrates. We present a detailed investigation of the optical properties by high resolution photoluminescence (PL) spectroscopy, resolved in time and space in the range 10-300 K, providing quantitative information concerning carriers and excitons recombination dynamics. The PL is characterized by a limited inhomogeneous broadening (~15 meV at 10 K) and its origin is discussed from detailed analysis with investigations at the micro-scale. The samples, obtained without any post-growth treatment, show a homogeneous PL emission in spectrum and intensity on large sample areas (several cm 2 ). Temperature dependent and time-resolved PL spectra elucidate the role of carrier trapping in determining the PL quenching up to room temperature. Our results open the route for the realization of large-area inorganic halide perovskite films for photonic and optoelectronic devices.

Published
2021
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48. First Proof-of-Principle of Inorganic Lead Halide Perovskites Deposition by Magnetron-Sputtering.

Author

Borri C, Calisi N, Galvanetto E, Falsini N, Biccari F, Vinattieri A, Cucinotta G, and Caporali S

Abstract

The present work reports the application of RF-magnetron sputtering technique to realize CsPbBr 3 70 nm thick films on glass substrate by means of a one-step procedure. The obtained films show highly uniform surface morphology and homogeneous thickness as evidenced by AFM and SEM investigations. XRD measurements demonstrate the presence of two phases: a dominant orthorhombic CsPbBr 3 and a subordinate CsPb 2 Br 5 . Finally, XPS data reveals surface bromine depletion respect to the stoichiometrical CsPbBr 3 composition, nevertheless photoluminescence spectroscopy results confirm the formation of a highly luminescent film. These preliminary results demonstrate that our approach could be of great relevance for easy fabrication of large area perovskite thin films. Future developments, based on this approach, may include the realization of multijunction solar cells and multicolor light emitting devices.

Published
2019
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49. GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers.

Author

Ballabio A, Bietti S, Scaccabarozzi A, Esposito L, Vichi S, Fedorov A, Vinattieri A, Mannucci C, Biccari F, Nemcsis A, Toth L, Miglio L, Gurioli M, Isella G, and Sanguinetti S

Abstract

We demonstrate the growth of low density anti-phase boundaries, crack-free GaAs epilayers, by Molecular Beam Epitaxy on silicon (001) substrates. The method relies on the deposition of thick GaAs on a suspended Ge buffer realized on top of deeply patterned Si substrates by means of a three-temperature procedure for the growth. This approach allows to suppress, at the same time, both threading dislocations and thermal strain in the epilayer and to remove anti-phase boundaries even in absence of substrate tilt. Photoluminescence measurements show the good uniformity and the high optical quality of AlGaAs/GaAs quantum well structures realized on top of such GaAs layer.

Published
2019
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50. Tailoring carbon nanotubes optical properties through chirality-wise silicon ring resonators.

Author

Durán-Valdeiglesias E, Zhang W, Alonso-Ramos C, Serna S, Le Roux X, Maris-Morini D, Caselli N, Biccari F, Gurioli M, Filoramo A, Cassan E, and Vivien L

Abstract

Semiconducting single walled carbon nanotubes (s-SWNT) have an immense potential for the development of active optoelectronic functionalities in ultra-compact hybrid photonic circuits. Specifically, s-SWNT have been identified as a very promising solution to implement light sources in the silicon photonics platform. Still, two major challenges remain to fully exploit the potential of this hybrid technology: the limited interaction between s-SWNTs and Si waveguides and the low quantum efficiency of s-SWNTs emission. Silicon micro-ring resonators have the potential capability to overcome these limitations, by providing enhanced light s-SWNT interaction through resonant light recirculation. Here, we demonstrate that Si ring resonators provide SWNT chirality-wise photoluminescence resonance enhancement, releasing a new degree of freedom to tailor s-SWNT optical properties. Specifically, we show that judicious design of the micro-ring geometry allows selectively promoting the emission enhancement of either (8,6) or (8,7) SWNT chiralities present in a high-purity polymer-sorted s-SWNT solution. In addition, we present an analysis of nanometric-sized silicon-on-insulator waveguides that predicts stronger light s-SWNT interaction for transverse-magnetic (TM) modes than for conventionally used transverse-electric (TE) modes.

Published
2018
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