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GaAs nanostructures on Si platform

Authors :
Leo Miglio
Stefano Sanguinetti
Francesco Biccari
Alexey Fedorov
Luca Esposito
David Scarpellini
M. Abbarchi
Sergio Bietti
Andrea Ballabio
Massimo Gurioli
Jacopo Frigerio
G. Isella
Anna Vinattieri
Sanguinetti, S
Bietti, S
Scarpellini, D
Ballabio, A
Miglio, L
Isella, G
Esposito, L
Frigerio, J
Fedorov, A
Gurioli, M
Biccari, F
Abbarchi, M
Vinattieri, A
Source :
2015 Opto-Electronics and Communications Conference, OECC 2015 7340229, 28 June-2 July 2015, info:cnr-pdr/source/autori:Sanguinetti S.; Bietti S.; Scarpellini D.; Ballabio A.; Miglio L.; Isella G.; Esposito L.; Frigerio J.; Fedorov A.; Gurioli M.; Biccari F.; Abbarchi M.; Vinattieri A./congresso_nome:2015 Opto-Electronics and Communications Conference, OECC 2015 7340229/congresso_luogo:/congresso_data:28 June-2 July 2015/anno:2015/pagina_da:/pagina_a:/intervallo_pagine
Publication Year :
2015
Publisher :
Institute of Electrical and Electronics Engineers Inc., 2015.

Abstract

Effective monolithic integration strategies for high quality quantum III-V nanostructure fabrication on Si will be introduced. The methodologies presented range from ultrathin planar Ge virtual substrates for the integration of single photon emitters with high temperature stability to advanced three-dimensional Ge growths strategies.

Details

Language :
English
Database :
OpenAIRE
Journal :
2015 Opto-Electronics and Communications Conference, OECC 2015 7340229, 28 June-2 July 2015, info:cnr-pdr/source/autori:Sanguinetti S.; Bietti S.; Scarpellini D.; Ballabio A.; Miglio L.; Isella G.; Esposito L.; Frigerio J.; Fedorov A.; Gurioli M.; Biccari F.; Abbarchi M.; Vinattieri A./congresso_nome:2015 Opto-Electronics and Communications Conference, OECC 2015 7340229/congresso_luogo:/congresso_data:28 June-2 July 2015/anno:2015/pagina_da:/pagina_a:/intervallo_pagine
Accession number :
edsair.doi.dedup.....78eaf7db4f187bd9a37791bf77950a66