30 results on '"Berthou Maxime"'
Search Results
2. Impact of layout on the surge current robustness of 1.2 KV SiC diodes
3. Impact of Channel Mobility Improvement Using Boron Diffusion on Different Power MOSFETs Voltage Classes
4. Electrical performances and reliability of commercial SiC MOSFETs at high temperature and in SC conditions
5. Modélisation phénoménologique de la caractéristique IV en direct de diodes Schottky/JBS en carbure de silicium
6. Planar edge terminations for high voltage 4H-SiC power MOSFETs
7. 4.5kV SiC MOSFET with boron doped gate dielectric
8. Repetitive Short-Circuit Tests on SiC VMOS Devices
9. An Ultrafast I-V Measurement Technique Accounting for Capacitive and Leakage Currents in Reverse Mode for SiC Power Devices
10. Studies on Floating Contact Press-Pack Diodes Surge Current Capability
11. Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range
12. Design Impact on the Static and Short-Circuit Characteristics of SiC-SIT with Non-Uniformly Doped Channel
13. Implementation of high voltage Silicon Carbide rectifiers and switches
14. Investigation of Using SiC MOSFET for High Temperature Applications
15. State of art of current and future technologies in current limiting devices
16. Bulk Thickness and Short Circuit Capacity of a 1200V 4H-SiC VJFET
17. Cryogenic to High Temperature Exploration of 4H-SiC W-SBD
18. Short-Circuit Capability Exploration of Silicon Carbide Devices
19. Gate Oxide Degradation of SiC MOSFET in Switching Conditions
20. Monolithically Integrated Temperature Sensor in Silicon Carbide Power MOSFETs
21. Study of 4H-SiC Schottky Diode Designs for 3.3kV Applications
22. Comparison of 5kV SiC JBS and PiN Diodes
23. Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes
24. Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress
25. Radiation Defects Produced in 4H-SiC Epilayers by Proton and Alpha-Particle Irradiation
26. Integration of Temperature and Current Sensors in 4H-SiC VDMOS
27. High Temperature Capability of High Voltage 4H-SiC JBS
28. Rapid and Efficient Oxidation Process of SiC by In Situ Multiple RTP Steps
29. Comparaison de diodes SiC-4H Schottky et bipolaires 3 kV-20 A
30. Thermal Behavior of SiC Power Diodes
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.