143 results on '"Bedel, E"'
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2. Effect of the angular momentum on the magnitude of the current in magneto-tunnelling spectroscopy of quantum dots
3. Influence of Segment IV Embolization in Addition to Right Portal Vein Embolization before Extended Right Hepatectomy
4. Influence de l’embolisation portale droite (EPD) associée aux branches du segment IV (EPD + IV) sur les suites de lobectomies hépatiques droites (LHD) pour cancer
5. Depressive symptoms after hepatitis C cure and socio-behavioral correlates in aging people living with HIV (ANRS CO13 HEPAVIH)
6. Post‐HCV cure self‐reported changes in physical activity, eating behaviours, and fatigue in people living with HIV (ANRS CO13 HEPAVIH)
7. Patient-reported symptoms during direct-acting antiviral treatment: A real-life study in HIV-HCV coinfected patients (ANRS CO13 HEPAVIH)
8. Diameter of As clusters in LT-GaAs by Raman spectroscopy
9. Polar phonon-intersubband plasmon coupling in Si delta-doped GaAs
10. Improved method for GaAs-(Ga, Al) As epitaxial regrowth
11. Precipitation in low temperature grown GaAs
12. In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells.
13. Nucleation Step of GaAs/Si and GaAs/(Ca,Sr)F2/Si: Aes and Rheed Studies
14. Structural, magnetic and magnetoresistive properties of PTCTE based organic spin valves
15. Characterization of implantation and annealing of Zn-implanted InP by Raman spectrometry.
16. Raman study of longitudinal optical phonon-plasmon coupling and disorder effects in heavily Be-doped GaAs.
17. Raman study under resonant conditions of defects near the interface in a GaAs/Si heterostructure.
18. Optical determination of strains in heterostructures: GaAs/Si as an example.
19. Raman characterization of twinning in heteroepitaxial semiconductor layers: GaAs/(Ca,Sr)F2.
20. Molecular-beam epitaxy and optical characterization of GaAs on CaF2 substrates.
21. Resonant Raman Scattering in Ga1-x InxP Solid Solutions
22. Si-substrate preparation for GaAs/Si molecular-beam epitaxy at low temperature under a Si flux.
23. Two-dimensional-like nucleation of GaAs on Si by room-temperature deposition.
24. On the mode of growth of CaF2 and (Ca,Sr)F2 on GaAs and Si(111) substrates.
25. End-of-range defects in germanium and their role in boron deactivation
26. Enhanced fluctuations of the tunneling density of states near the bottom of a Landau band measured by a local spectrometer
27. Resonant tunnelling via two impurity levels in a vertical tunnelling nanostructure
28. Thermally detected optical absorption and photoluminescence studies of InGaAsN/GaAs quantum wells
29. Photo-induced transient spectroscopy of defect levels in GaInNAs
30. Effect of nitrogen fraction on the temperature dependence of GaNAs/GaAs quantum-well emission
31. S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides
32. Photo-induced transient spectroscopy and in-plane photovoltage in GaInNAs/GaAs quantum wells
33. Bi-directional field effect light emitting and absorbing heterojunction with Ga0.8In0.2N0.015As0.985 at 1250 nm
34. Comparison between dilute nitrides grown on {111} and (100) GaAs substrates: N incorporation and quantum well optical properties
35. Interaction Strength between the Highly Localised Nitrogen States and the Extended Semiconductor Matrix States in GaInNAs
36. A comparative study of the Ostwald ripening of As precipitates in LT-MBE grown and in As implanted GaAs.
37. Acoustic-phonon Raman scattering in InAs/InP self-assembled quantum dots
38. Non-stoichiometry in (001) low temperature GaAs by Raman spectroscopy
39. Resonant Tunnelling Spectroscopy of the Local Density of States in a Disordered Conductor
40. Enhanced Fluctuations of the Tunneling Density of States near the Bottom of a Landau Band Measured by a Local Spectrometer
41. Influence de l’embolisation portale droite (EPD) associée aux branches du segment IV (EPD+IV) sur les suites de lobectomies hépatiques droites (LHD) pour cancer
42. Preparation of GaSb(100) surfaces by ultraviolet irradiation
43. A study of ion-implanted semiconductor nanostructures
44. Quantum box energy spectroscopy by 3D-0D resonant tunnelling
45. Nanofabrication with a full control of the electrodes and quantum well dimensionalities: 3D-0D resonant tunnelling through quantum boxes
46. Alternate method to produce quantum wires using dislocation slipping
47. The influence of growth and annealing conditions on the structural quality of LT-GaAs layers grown on [111]B substrate by molecular beam epitaxy.
48. Improved method for GaAs-(Ga,Al) As epitaxial regrowth
49. Quantum wires obtained by dislocation slipping
50. Dimensional Reduction of GaAs Quantum Well Cut by Dislocation Slip Observed by Photoluminescence
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