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Si-substrate preparation for GaAs/Si molecular-beam epitaxy at low temperature under a Si flux.

Authors :
Castagne, J.
Bedel, E.
Fontaine, C.
Munoz-Yague, A.
Source :
Journal of Applied Physics. 7/1/1988, Vol. 64 Issue 1, p246. 3p.
Publication Year :
1988

Abstract

Describes a technique for preparing silicon substrates in molecular-beam epitaxy systems devoted to III-V compound growth. Use of Auger electron spectrometry and reflection high-energy electron diffraction; Advantages of the proposed technique.

Details

Language :
English
ISSN :
00218979
Volume :
64
Issue :
1
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7648061
Full Text :
https://doi.org/10.1063/1.341472