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Si-substrate preparation for GaAs/Si molecular-beam epitaxy at low temperature under a Si flux.
- Source :
-
Journal of Applied Physics . 7/1/1988, Vol. 64 Issue 1, p246. 3p. - Publication Year :
- 1988
-
Abstract
- Describes a technique for preparing silicon substrates in molecular-beam epitaxy systems devoted to III-V compound growth. Use of Auger electron spectrometry and reflection high-energy electron diffraction; Advantages of the proposed technique.
- Subjects :
- *SILICON
*MOLECULAR beam epitaxy
*ELECTRON diffraction
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 64
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7648061
- Full Text :
- https://doi.org/10.1063/1.341472