1. Study of the SiO2-Si Interface Using Variable Energy Positron Two-Dimensional Angular Correlation of Annihilation Radiation
- Author
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J. P. Peng, Harshman Dr, Becker Dp, Kelvin G. Lynn, and Asoka-Kumar P
- Subjects
Annihilation ,Materials science ,Silicon ,Oxide ,General Physics and Astronomy ,chemistry.chemical_element ,Trapping ,Positronium ,chemistry.chemical_compound ,Positron ,chemistry ,Annihilation radiation ,Atomic physics ,Energy (signal processing) - Abstract
The defect structure of the SiO{sub 2}-Si interface has been studied using variable energy positron two-dimensional angular correlation of annihilation radiation (2D-ACAR). As the first depth-resolved 2D-ACAR measurement, unique information about this interface was obtained:The formation and trapping of positronium atoms are observed at the microvoids ({approximately}10 A in size) in the oxide and interface regions. Positron trapping and annihilation at the {ital P}{sub {ital b}} centers in the interface region are inferred. The existence of the microvoids in the interface region is beyond the current interface model, and the results may have a profound impact on the understanding of the interface growth. {copyright} {ital 1996 The American Physical Society.}
- Published
- 1996
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