181 results on '"Bawedin, M."'
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2. In-situ heater for thermal assist recovery of MOS devices in 28 nm UTBB FD-SOI CMOS technology
3. A2RAM compact modeling: From DC to 1T-DRAM memory operation
4. RF performance enhancement of 28nm FD-SOI transistors down to cryogenic temperature using back biasing
5. Investigation of thin gate-stack Z2-FET devices as capacitor-less memory cells
6. Doping profile extraction in thin SOI films: Application to A2RAM
7. InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET
8. Kink effect in ultrathin FDSOI MOSFETs
9. A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters
10. Ultra-low power 1T-DRAM in FDSOI technology
11. Back-gated InGaAs-on-insulator lateral N+NN+ MOSFET: Fabrication and typical conduction mechanisms
12. Unusual gate coupling effect in extremely thin and short FDSOI MOSFETs
13. High-resolution mobility spectrum analysis of magnetoresistance in fully-depleted silicon-on-insulator MOSFETs
14. Parasitic bipolar effect in ultra-thin FD SOI MOSFETs
15. A Selection of SOI Puzzles and Tentative Answers
16. Floating-Body SOI Memory: The Scaling Tournament
17. Improved 1/f noise characterization of strained SiGe on insulator MOSFETs fabricated on wafers obtained by the Ge enrichment technique
18. New numerical low frequency noise model for front and buried oxide trap density characterization in FDSOI MOSFETs
19. A comparative 1/ f noise study of GeOI wafers obtained by the Ge enrichment technique and the Smart Cut technology
20. A FinFET memory with remote carrier trapping in ONO buried insulator
21. Origin of the Out-of-Equilibrium Body Potential In Silicon on Insulator Devices With Metal Contacts
22. Dynamic body potential variation in FD SOI MOSFETs operated in deep non-equilibrium regime: Model and applications
23. Si/Si0.7Ge0.3 A2RAM nanowires fabrication and characterization for 1T-DRAM applications
24. Dimensional effects and scalability of Meta-Stable Dip (MSD) memory effect for 1T-DRAM SOI MOSFETs
25. Innovating SOI memory devices based on floating-body effects
26. Thin film fully-depleted SOI four-gate transistors
27. Development of a robust fabrication process for single silicon nanowire-based omega gate transistors on polyamide substrate
28. A Selection of SOI Puzzles and Tentative Answers
29. Floating-Body SOI Memory: The Scaling Tournament
30. A new memory effect (MSD) in fully depleted SOI MOSFETs
31. LDMOS in SOI technology with very-thin silicon film
32. Preliminary results of a novel low voltage M-OTP in MOS transistor in 28nm FD-SOI
33. 1T1C Ultra low power relative Thermal-Voltage sensor in 28nm UTBB FD-SOI CMOS technology for standard, spatial and quantum applications
34. Compact MOS Structure & Design for Ion–Ioff Thermal control in 28nm UTBB FD-SOI CMOS technology
35. Pure boron monolayer to boost A2RAM performance
36. Pseudo-MOSFET response to transient ramp signal applied to the gate
37. In-situ thermal assist recovery thanks to active silicide source on NMOS transistor in FD-SOI technology
38. Extended investigation of a novel MOS device for in-situ heating in 28 nm UTBB FD-SOI CMOS technology
39. Modeling of the bridge threshold voltage in A2RAM cell
40. Z2-FET: a multi-functional device used for photodetection
41. Development of a robust fabrication process for single silicon nanowire-based omega gate transistors on polyamide substrate.
42. Z²-FET DC hysteresis: deep understanding and preliminary model
43. A highly sensitive photodetector based on deepdepletion effects in SOI transistors
44. ICPD: an SOI-based photodetector with high responsivity and tunable response spectrum
45. A New Photodetector on SOI
46. Sharp switching, hysteresis-free characteristics of Z2-FET for fast logic applications
47. Optimized in situ heating control on a new MOS device structure in 28nm UTBB FD-SOI CMOS technology
48. A review of the Z 2 -FET 1T-DRAM memory: Operation mechanisms and key parameters
49. Novel photodetector based on FD-SOI substrate with interface coupling effect
50. Evaluation of thin-oxide Z2-FET DRAM cell
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