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The operation of Extreme Ultraviolet (EUV) lithography scanners inherently goes hand-in-hand with the creation of highly transient pulsed plasmas in the optical path of these tools. These so-called EUV-induced plasmas are created upon photoionization events when a pulsed beam of EUV photons travels through the low pressure background gas. It is fully recognized by the lithography industry that EUV-induced plasmas may significantly impact the quality and life-time of expensive and delicate optical elements in the scanner. Research efforts into EUV-induced plasmas impacting plasma-facing surfaces have so far been limited to pure hydrogen (H2) plasmas. However, this hydrogen background gas may occasionally be diluted with a small fraction of another molecular gas such as nitrogen (N2). The impact on the relevant plasma parameters of such molecular contaminants has remained unknown until now. In this letter, we put forward measurements of energy-resolved fluxes of (positive) hydrogen ions, nitrogen ions, and hydrogen-nitrogen ions created in a pulsed N2-diluted EUV-induced plasma in H2 at approximately 5 Pa (typical EUV lithography scanner conditions). The data have been obtained using an electrostatic quadrupole plasma analyzer and show that although the N2-dilution fraction is small (∼2 × 10−3) compared to the H2 partial pressure, implications for the ion flux out of the plasma and the composition thereof are significant. Since the mass of nitrogen-containing ions is much higher in comparison to that of their hydrogen counterparts, and because of their potential chemical activity, this effect has to be taken into account while studying the surface impact of EUV-induced plasmas. [ABSTRACT FROM AUTHOR]

A new approach for an in-line beam monitor for ionizing radiation was introduced in a recent publication (Beckers J et al 2018 J. Phys. D: Appl. Phys. 52 034004). Due to the recent detection and investigation of an additional third decay regime of the afterglow of an extreme ultraviolet photon-induced plasma described in a later article (Platier B et al 2020 Appl. Phys. Lett. 116 103703) there is an additional reason for a minimum number of photons for this approach to work. Near or below this threshold, we explain that the response time of the diagnostic method is a limiting factor. Further, a second limit for the number of photons within a pulse is formalized related to the trapping of highly energetic free electrons. [ABSTRACT FROM AUTHOR]

A simple and selective new technique for atomic hydrogen flux measurements in a hydrogen plasma environment is introduced and demonstrated in this work. This technique works by measuring the etching rate of an amorphous carbon film and translating this to an incoming hydrogen radical flux through a well-defined carbon etch yield per radical. Ions present in the plasma environment have a much higher etch yield than radicals do. For that reason, suppression of the ion flux toward the carbon film is crucial to ensure that the observed carbon etch rate is dominated by atomic hydrogen etching. It is demonstrated that this can be achieved using a simple cylindrical pipe (hereinafter "chimney") in which a bend is introduced to enforce ion-wall collisions, neutralizing the ions. The chimney is made out of Macor, a material with low catalytic surface activity, to preserve the incoming atomic hydrogen flux while effectively suppressing ions. Ultimately, the etching sensor is deployed in a radio frequency inductively coupled hydrogen plasma operated at low pressure (1-10 Pa). Atomic hydrogen fluxes are measured and compared with heat flux sensor and vacuum ultraviolet absorption spectroscopy measurements in the same setup. All sensors agreed within a factor 4 in the atomic hydrogen flux range 10 19 to 10 21  m -2  s -1 .