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PbSnTe is a topological crystalline insulator (TCI), which holds promise for scattering-free transport channels and fault-tolerant quantum computing. As the topologically non-trivial states live on the surface, the nanowire geometry, with a high surface-to-volume ratio, is ideal for probing these states. The controlled growth of PbSnTe nanowires using molecular beam epitaxy has been shown before, but an understanding of the anisotropic growth and the resulting morphology is lacking. Here, based on experimental observations, we develop a model that describes the evolution of NW morphology as a function of growth time. It is found that the anisotropic morphology can be described by a combination of direct impingement, mask diffusion and facet diffusion which results in a transition from a Te-limited growth regime to a group IV-limited growth regime. This growth model allows us to design more targeted experiments which could lead to a higher flexibility in device design.

Contemporary quantum devices are reaching new limits in size and complexity, allowing for the experimental exploration of emergent quantum modes. However, this increased complexity introduces significant challenges in device tuning and control. Here, we demonstrate autonomous tuning of emergent Majorana zero modes in a minimal realization of a Kitaev chain. We achieve this task using cross-platform transfer learning. First, we train a tuning model on a theory model. Next, we retrain it using a Kitaev chain realization in a two-dimensional electron gas. Finally, we apply this model to tune a Kitaev chain realized in quantum dots coupled through a semiconductor-superconductor section in a one-dimensional nanowire. Utilizing a convolutional neural network, we predict the tunneling and Cooper pair splitting rates from differential conductance measurements, employing these predictions to adjust the electrochemical potential to a Majorana sweet spot. The algorithm successfully converges to the immediate vicinity of a sweet spot (within 1.5 mV in 67.6% of attempts and within 4.5 mV in 80.9% of cases), typically finding a sweet spot in 45 minutes or less. This advancement is a stepping stone towards autonomous tuning of emergent modes in interacting systems, and towards foundational tuning machine learning models that can be deployed across a range of experimental platforms.

Majorana zero modes (MZMs) are non-Abelian excitations predicted to emerge at the edges of topological superconductors. One proposal for realizing a topological superconductor in one dimension involves a chain of spinless fermions, coupled through $p$-wave superconducting pairing and electron hopping. This concept is also known as the Kitaev chain. A minimal two-site Kitaev chain has recently been experimentally realized using quantum dots (QDs) coupled through a superconductor. In such a minimal chain, MZMs are quadratically protected against global perturbations of the QD electrochemical potentials. However, they are not protected from perturbations of the inter-QD couplings. In this work, we demonstrate that extending the chain to three sites offers greater protection than the two-site configuration. The enhanced protection is evidenced by the stability of the zero-energy modes, which is robust against variations in both the coupling amplitudes and the electrochemical potential variations in the constituent QDs. While our device offers all the desired control of the couplings it does not allow for superconducting phase control. Our experimental observations are in good agreement with numerical simulated conductances with phase averaging. Our work pioneers the development of longer Kitaev chains, a milestone towards topological protection in QD-based chains.

Detection and control of Andreev Bound States (ABSs) localized at semiconductor-superconductor interfaces are essential for their use in quantum applications. Here we investigate the impact of ABSs on the supercurrent through a Josephson junction containing a quantum dot (QD). Additional normal-metal tunneling probes on both sides of the junction unveil the ABSs residing at the semi-superconductor interfaces. Such knowledge provides an ingredient missing in previous studies, improving the connection between theory and experimental data. By varying the ABS energies using electrostatic gates, we show control of the switching current, with the ability to alter it by more than an order of magnitude. Finally, the large degree of ABS tunability allows us to realize a three-site ABS-QD-ABS molecule (Andreev trimer) in which the central QD is screened by both ABSs. This system is studied simultaneously using both supercurrent and spectroscopy.

Across a broad range of qubits, a pervasive trade-off becomes obvious: increased coherence seems to be only possible at the cost of qubit speed. This is consistent with the notion that protecting a qubit from its noisy surroundings also limits the control over it. Indeed, from ions to atoms, to superconductors and spins, the leading qubits share a similar Q-factor - the product of speed and coherence time - even though the speed and coherence of various qubits can differ by up to 8 orders of magnitude. This is the qubit speed-coherence dilemma: qubits are either coherent but slow or fast but short-lived. Here, we demonstrate a qubit for which we can triple the speed while simultaneously quadrupling the Hahn-echo coherence time when tuning a local electric field. In this way, the qubit speed and coherence scale together without compromise on either quantity, boosting the Q-factor by over an order of magnitude. Our qubit is a hole spin in a Ge/Si core/shell nanowire providing strong 1D confinement, resulting in the direct Rashba spin-orbit interaction. Due to Heavy-hole light-hole mixing a maximum of the spin-orbit strength is reached at finite electrical field. At the local maximum, charge fluctuations are decoupled from the qubit and coherence is enhanced, yet the drive speed becomes maximal. Our proof-of-concept experiment shows that a properly engineered qubit can be made faster and simultaneously more coherent, removing an important roadblock. Further, it demonstrates that through all-electrical control a qubit can be sped up, without coupling more strongly to the electrical noise environment. As charge fluctuators are unavoidable in semiconductors and all-electrical control is highly scalable, our results improve the prospects for quantum computing in Si and Ge., Comment: Main: 6 pages with 3 display items plus 2 pages for references and methods Supplementary: 12 pages with 7 display items

Topological crystalline insulators (TCIs) are interesting for their topological surface states, which hold great promise for scattering-free transport channels and fault-tolerant quantum computing. A promising TCI is SnTe. However, Sn-vacancies form in SnTe, causing a high hole density, hindering topological transport from the surface being measured. This issue could be relieved by using nanowires with a high surface-to-volume ratio. Furthermore, SnTe can be alloyed with Pb reducing the Sn-vacancies while maintaining its topological phase. Here we present the catalyst-free growth of monocrystalline PbSnTe in molecular beam epitaxy (MBE). By the addition of a pre-deposition stage before the growth, we have control over the nucleation phase and thereby increase the nanowire yield. This facilitates tuning the nanowire aspect ratio by a factor of four by varying the growth parameters. These results allow us to grow specific morphologies for future transport experiments to probe the topological surface states in a Pb1-xSnxTe-based platform.

Josephson junctions are typically characterized by a single phase difference across two superconductors. This conventional two-terminal Josephson junction can be generalized to a multi-terminal device where the Josephson energy contains terms with contributions from multiple independent phase variables. Such multi-terminal Josephson junctions (MTJJs) are being considered as platforms for engineering effective Hamiltonians with non-trivial topologies, such as Weyl crossings and higher-order Chern numbers. These prospects rely on the ability to create MTJJs with non-classical multi-terminal couplings in which only a few quantum modes are populated. Here, we demonstrate these requirements in a three-terminal Josephson junction fabricated on selective-area-grown (SAG) PbTe nanowires. We observe signatures of a $\pi$-shifted Josephson effect, consistent with inter-terminal couplings mediated by four-particle quantum states called Cooper quartets. We further observe supercurrent co-existent with a non-monotonic evolution of the conductance with gate voltage, indicating transport mediated by a few quantum modes in both two- and three-terminal devices.

Gatemon qubits are the electrically tunable cousins of superconducting transmon qubits. In this work, we demonstrate the full coherent control of a gatemon qubit based on hole carriers in a Ge/Si core/shell nanowire, with the longest coherence times in group IV material gatemons to date. The key to these results is a high-quality Josephson junction obtained in a straightforward and reproducible annealing technique. We demonstrate that the transport through the narrow junctions is dominated by only two quantum channels, with transparencies up to unity. This novel qubit platform holds great promise for quantum information applications, not only because it incorporates technologically relevant materials, but also because it provides new opportunities, like an ultrastrong spin-orbit coupling in the few-channel regime of Josephson junctions., Comment: 15 pages, 11 figures

The recent realization of a two-site Kitaev chain featuring "poor man's Majorana" states demonstrates a path forward in the field of topological superconductivity. Harnessing the potential of these states for quantum information processing, however, requires increasing their robustness to external perturbations. Here, we form a two-site Kitaev chain using proximitized quantum dots hosting Yu-Shiba-Rusinov states. The strong hybridization between such states and the superconductor enables the creation of poor man's Majorana states with a gap larger than $70 \mathrm{~\mu eV}$. It also greatly reduces the charge dispersion compared to Kitaev chains made with non-proximitized quantum dots. The large gap and reduced sensitivity to charge fluctuations will benefit qubit manipulation and demonstration of non-abelian physics using poor man's Majorana states., Comment: 45 pages, 14 figures

The proximity effect of superconductivity on confined states in semiconductors gives rise to various bound states such as Andreev bound states (ABSs), Andreev molecules and Majorana zero modes. While such bound states do not conserve charge, their Fermion parity is a good quantum number. One way to measure parity is to convert it to charge first, which is then sensed. In this work, we sense the charge of ABSs and Andreev molecules in an InSb-Al hybrid nanowire using an integrated quantum dot operated as a charge sensor. We show how charge sensing measurements can resolve the even and odd states of an Andreev molecule, without affecting the parity. Such an approach can be further utilized for parity measurements of Majorana zero modes in Kitaev chains based on quantum dots.

With the development of quantum technology, hybrid devices that combine superconductors (S) and semiconductors (Sm) have attracted great attention due to the possibility of engineering structures that benefit from the integration of the properties of both materials. However, until now, none of the experiments have reported good control of band alignment at the interface, which determines the strength of S-Sm coupling and the proximitized superconducting gap. Here, we fabricate hybrid devices in a generic way with argon milling to modify the interface while maintaining its high quality. First, after the milling the atomically connected S-Sm interfaces appear, resulting in a large induced gap, as well as the ballistic transport revealed by the multiple Andreev reflections and quantized above-gap conductance plateaus. Second, by comparing transport measurement with Schr\"odinger-Poisson (SP) calculations, we demonstrate that argon milling is capable of varying the band bending strength in the semiconducting wire as the electrons tend to accumulate on the etched surface for longer milling time. Finally, we perform nonlocal measurements on advanced devices to demonstrate the coexistence and tunability of crossed Andreev reflection (CAR) and elastic co-tunneling (ECT) -- key ingredients for building the prototype setup for realization of Kitaev chain and quantum entanglement probing. Such a versatile method, compatible with the standard fabrication process and accompanied by the well-controlled modification of the interface, will definitely boost the creation of more sophisticated hybrid devices for exploring physics in solid-state systems., Comment: 41 pages, 16 figures

Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable topological regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work we investigate both aspects. We developed InSb nanowires with ultra-thin diameters, as well as a new gating approach, involving few-layer graphene (FLG) and Atomic Layer Deposition (ALD)-grown AlOx. Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry-P\'erot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices., Comment: 14 pages, 5 figures

Radio frequency reflectometry techniques enable high bandwidth readout of semiconductor quantum dots. Careful impedance matching of the resonant circuit is required to achieve high sensitivity, which however proves challenging at cryogenic temperatures. Gallium arsenide-based voltage-tunable capacitors, so-called varactor diodes, can be used for in-situ tuning of the circuit impedance but deteriorate and fail at temperatures below 10 K and in magnetic fields. Here, we investigate a varactor based on strontium titanate with hyperabrupt capacitance-voltage characteristic, that is, a capacitance tunability similar to the best gallium arsenide-based devices. The varactor design introduced here is compact, scalable and easy to wirebond with an accessible capacitance range from 45 pF to 3.2 pF. We tune a resonant inductor-capacitor circuit to perfect impedance matching and observe robust, temperature and field independent matching down to 11 mK and up to 2 T in-plane field. Finally, we perform gate-dispersive charge sensing on a germanium/silicon core/shell nanowire hole double quantum dot, paving the way towards gate-based single-shot spin readout. Our results bring small, magnetic field-resilient, highly tunable varactors to mK temperatures, expanding the toolbox of cryo-radio frequency applications., Comment: 5 pages + 5 pages Appendix; 4 figures + 8 figures in Appendix; presented at APS March Meeting 2023 Session N72.002

Tunneling spectroscopy is widely used to examine the subgap spectra in semiconductor-superconductor nanostructures when searching for Majorana zero modes (MZMs). Typically, semiconductor sections controlled by local gates at the ends of hybrids serve as tunnel barriers. Besides detecting states only at the hybrid ends, such gate-defined tunnel probes can cause the formation of non-topological subgap states that mimic MZMs. Here, we develop an alternative type of tunnel probes to overcome these limitations. After the growth of an InSb-Al hybrid nanowire, a precisely controlled in-situ oxidation of the Al shell is performed to yield a nm-thick Al oxide layer. In such thin isolating layer, tunnel probes can be arbitrarily defined at any position along the hybrid nanowire by shadow-wall angle-deposition of metallic leads. This allows us to make multiple tunnel probes along single nanowire hybrids and to successfully identify Andreev bound states (ABSs) of various spatial extension residing along the hybrids., Comment: 38 pags, 5 figures

A semiconductor nanowire brought in proximity to a superconductor can form discrete, particle-hole symmetric states, known as Andreev bound states (ABSs). An ABS can be found in its ground or excited states of different spin and parity, such as a spin-zero singlet state with an even number of electrons or a spin-1/2 doublet state with an odd number of electrons. Considering the difference between spin of the even and odd states, spin-filtered measurements have the potential to reveal the underlying ground state. To directly measure the spin of single-electron excitations, we probe an ABS using a spin-polarized quantum dot that acts as a bipolar spin filter, in combination with a non-polarized tunnel junction in a three-terminal circuit. We observe a spin-polarized excitation spectrum of the ABS, which in some cases is fully spin-polarized, despite the presence of strong spin-orbit interaction in the InSb nanowires. In addition, decoupling the hybrid from the normal lead blocks the ABS relaxation resulting in a current blockade where the ABS is trapped in an excited state. Spin-polarized spectroscopy of hybrid nanowire devices, as demonstrated here, is proposed as an experimental tool to support the observation of topological superconductivity.

A short superconducting segment can couple attached quantum dots via elastic co-tunneling (ECT) and crossed Andreev reflection (CAR). Such coupled quantum dots can host Majorana bound states provided that the ratio between CAR and ECT can be controlled. Metallic superconductors have so far been shown to mediate such tunneling phenomena, albeit with limited tunability. Here we show that Andreev bound states formed in semiconductor-superconductor heterostructures can mediate CAR and ECT over mesoscopic length scales. Andreev bound states possess both an electron and a hole component, giving rise to an intricate interference phenomenon that allows us to tune the ratio between CAR and ECT deterministically. We further show that the combination of intrinsic spin-orbit coupling in InSb nanowires and an applied magnetic field provides another efficient knob to tune the ratio between ECT and CAR and optimize the amount of coupling between neighboring quantum dots.

Semiconducting nanowire Josephson junctions represent an attractive platform to investigate the anomalous Josephson effect and detect topological superconductivity by studying Josephson supercurrent. However, an external magnetic field generally suppresses the supercurrent through hybrid nanowire junctions and significantly limits the field range in which the supercurrent phenomena can be studied. In this work, we investigate the impact of the length of InSb-Al nanowire Josephson junctions on the supercurrent resilience against magnetic fields. We find that the critical parallel field of the supercurrent can be considerably enhanced by reducing the junction length. Particularly, in 30 nm-long junctions supercurrent can persist up to 1.3 T parallel field - approaching the critical field of the superconducting film. Furthermore, we embed such short junctions into a superconducting loop and obtain the supercurrent interference at a parallel field of 1 T. Our findings are highly relevant for multiple experiments on hybrid nanowires requiring a magnetic field-resilient supercurrent., Comment: 17 pages, 5 figures in main text. 22 pages, 10 figures in supporting information

Heteroepitaxy enables the engineering of novel properties, which do not exist in a single material. Two principle growth modes are identified for material combinations with large lattice mismatch, Volmer-Weber and Stranski-Krastanov. Both lead to the formation of three-dimensional islands, hampering the growth of flat defect-free thin films. This limits the number of viable material combinations. Here, we report a distinct growth mode found in molecular beam epitaxy of PbTe on InP initiated by pre-growth surface treatments. Early nucleation forms islands analogous to the Volmer-Weber growth mode, but film closure exhibits a flat surface with atomic terracing. Remarkably, despite multiple distinct crystal orientations found in the initial islands, the final film is single-crystalline. This is possible due to a reorientation process occurring during island coalescence, facilitating high quality heteroepitaxy despite the large lattice mismatch, difference in crystal structures and diverging thermal expansion coefficients of PbTe and InP. This growth mode offers a new strategy for the heteroepitaxy of dissimilar materials and expands the realm of possible material combinations.

Majorana bound states constitute one of the simplest examples of emergent non-Abelian excitations in condensed matter physics. A toy model proposed by Kitaev shows that such states can arise at the ends of a spinless $p$-wave superconducting chain. Practical proposals for its realization require coupling neighboring quantum dots in a chain via both electron tunneling and crossed Andreev reflection. While both processes have been observed in semiconducting nanowires and carbon nanotubes, crossed-Andreev interaction was neither easily tunable nor strong enough to induce coherent hybridization of dot states. Here we demonstrate the simultaneous presence of all necessary ingredients for an artificial Kitaev chain: two spin-polarized quantum dots in an InSb nanowire strongly coupled by both elastic co-tunneling and crossed Andreev reflection. We fine-tune this system to a sweet spot where a pair of Poor Man's Majorana states is predicted to appear. At this sweet spot, the transport characteristics satisfy the theoretical predictions for such a system, including pairwise correlation, zero charge and stability against local perturbations. While the simple system presented here can be scaled to simulate a full Kitaev chain with an emergent topological order, it can also be used imminently to explore relevant physics related to non-Abelian anyons., Comment: Authors' version of the accepted manuscript

In most naturally occurring superconductors, electrons with opposite spins are paired up to form Cooper pairs. This includes both conventional $s$-wave superconductors such as aluminum as well as high-$T_\text{c}$, $d$-wave superconductors. Materials with intrinsic $p$-wave superconductivity, hosting Cooper pairs made of equal-spin electrons, have not been conclusively identified, nor synthesized, despite promising progress. Instead, engineered platforms where $s$-wave superconductors are brought into contact with magnetic materials have shown convincing signatures of equal-spin pairing. Here, we directly measure equal-spin pairing between spin-polarized quantum dots. This pairing is proximity-induced from an $s$-wave superconductor into a semiconducting nanowire with strong spin-orbit interaction. We demonstrate such pairing by showing that breaking a Cooper pair can result in two electrons with equal spin polarization. Our results demonstrate controllable detection of singlet and triplet pairing between the quantum dots. Achieving such triplet pairing in a sequence of quantum dots will be required for realizing an artificial Kitaev chain., Comment: Authors' version of the accepted manuscript

Utilizing dispersive gate sensing (DGS), we investigate the spin-orbit field ($\textbf{B}_{SO}$) orientation in a many-electron double quantum dot (DQD) defined in an InSb nanowire. While characterizing the inter-dot tunnel couplings, the measured dispersive signal depends on the electron charge occupancy, as well as on the amplitude and orientation of the external magnetic field. The dispersive signal is mostly insensitive to the external field orientation when a DQD is occupied by a total odd number of electrons. For a DQD occupied by a total even number of electrons, the dispersive signal is reduced when the finite external magnetic field aligns with the effective $\textbf{B}_{SO}$ orientation. This fact enables the identification of $\textbf{B}_{SO}$ orientations for different DQD electron occupancies. The $\textbf{B}_{SO}$ orientation varies drastically between charge transitions, and is generally neither perpendicular to the nanowire nor in the chip plane. Moreover, $\textbf{B}_{SO}$ is similar for pairs of transitions involving the same valence orbital, and varies between such pairs. Our work demonstrates the practicality of DGS in characterizing spin-orbit interactions in quantum dot systems, without requiring any current flow through the device.

We systematically study three-terminal InSb-Al nanowire devices by using radio-frequency reflectometry. Tunneling spectroscopy measurements on both ends of the hybrid nanowires are performed while systematically varying the chemical potential, magnetic field and junction transparencies. Identifying the lowest-energy state allows for the construction of lowest- and zero-energy state diagrams, which show how the states evolve as a function of the aforementioned parameters. Importantly, comparing the diagrams taken for each end of the hybrids enables the identification of states which do not coexist simultaneously, ruling out a significant amount of the parameter space as candidates for a topological phase. Furthermore, altering junction transparencies filters out zero-energy states sensitive to a local gate potential. Such a measurement strategy significantly reduces the time necessary to identify a potential topological phase and minimizes the risk of falsely recognizing trivial bound states as Majorana zero modes., Comment: Main text: 12 pages, 9 figures. SupplementaryMaterials: 12 pages, 14 figures

Indium antimonide (InSb) nanowires are used as building blocks for quantum devices because of their unique properties, i.e., strong spin-orbit interaction and large Land\'e g-factor. Integrating InSb nanowires with other materials could potentially unfold novel devices with distinctive functionality. A prominent example is the combination of InSb nanowires with superconductors for the emerging topological particles research. Here, we combine the II-VI cadmium telluride (CdTe) with the III-V InSb in the form of core-shell (InSb-CdTe) nanowires and explore potential applications based on the electronic structure of the InSb-CdTe interface and the epitaxy of CdTe on the InSb nanowires. We determine the electronic structure of the InSb-CdTe interface using density functional theory and extract a type-I band alignment with a small conduction band offset ($\leq$ 0.3 eV). These results indicate the potential application of these shells for surface passivation or as tunnel barriers in combination with superconductors. In terms of the structural quality of these shells, we demonstrate that the lattice-matched CdTe can be grown epitaxially on the InSb nanowires without interfacial strain or defects. These epitaxial shells do not introduce disorder to the InSb nanowires as indicated by the comparable field-effect mobility we measure for both uncapped and CdTe-capped nanowires.

Advances in quantum technology may come from the discovery of new materials systems that improve the performance or allow for new functionality in electronic devices. Lead telluride (PbTe) is a member of the group IV-VI materials family that has significant untapped potential for exploration. Due to its high electron mobility, strong spin-orbit coupling and ultrahigh dielectric constant it can host few-electron quantum dots and ballistic quantum wires with opportunities for control of electron spins and other quantum degrees of freedom. Here, we report the fabrication of PbTe nanowires by molecular beam epitaxy. We achieve defect-free single crystalline PbTe with large aspect ratios up to 50 suitable for quantum devices. Furthermore, by fabricating a single nanowire field effect transistor, we attain bipolar transport, extract the bandgap and observe Fabry-Perot oscillations of conductance, a signature of quasiballistic transmission.

The lowest-energy excitations of superconductors do not carry an electric charge, as their wave function is equally electron-like and hole-like. This fundamental property is not easy to study in electrical measurements that rely on the charge to generate an observable signal. The ability of a quantum dot to act as a charge filter enables us to solve this problem and measure the quasiparticle charge in superconducting-semiconducting hybrid nanowire heterostructures. We report measurements on a three-terminal circuit, in which an injection lead excites a non-equilibrium quasiparticle distribution in the hybrid system, and the electron or hole component of the resulting quasiparticles is detected using a quantum dot as a tunable charge and energy filter. The results verify the chargeless nature of the quasiparticles at the gap edge and reveal the complete relaxation of injected charge and energy in a proximitized nanowire, resolving open questions in previous three-terminal experiments.

We demonstrate the use of radio-frequency (rf) resonators to measure the capacitance of nano-scale semiconducting devices in field-effect transistor configurations. The rf resonator is attached to the gate or the lead of the device. Consequently, tuning the carrier density in the conducting channel of the device affects the resonance frequency, quantitatively reflecting its capacitance. We test the measurement method on InSb and InAs nanowires at dilution-refrigerator temperatures. The measured capacitances are consistent with those inferred from the periodicity of the Coulomb blockade of quantum dots realized in the same devices. In an implementation of the resonator using an off-chip superconducting spiral inductor we find sensitivity values reaching down to 75~zF/$\sqHz$ at 1~kHz measurement bandwidth, and noise down to 0.45~aF at 1~Hz bandwidth. We estimate the sensitivity of the method for a number of other implementations. In particular we predict typical sensitivity of about 40~zF/$\sqHz$ at room temperature with a resonator comprised of off-the-shelf components. Of several proposed applications, we demonstrate two: the capacitance measurement of several identical 80~nm-wide gates with a single resonator, and the field-effect mobility measurement of an individual nanowire with the gate capacitance measured in-situ.

We study a Cooper-pair transistor realized by two Josephson weak links that enclose a superconducting island in an InSb-Al hybrid nanowire. When the nanowire is subject to a magnetic field, isolated subgap levels arise in the superconducting island and, due to the Coulomb blockade,mediate a supercurrent by coherent co-tunneling of Cooper pairs. We show that the supercurrent resulting from such co-tunneling events exhibits, for low to moderate magnetic fields, a phase offset that discriminates even and odd charge ground states on the superconducting island. Notably,this phase offset persists when a subgap state approaches zero energy and, based on theoretical considerations, permits parity measurements of subgap states by supercurrent interferometry. Such supercurrent parity measurements could, in a new series of experiments, provide an alternative approach for manipulating and protecting quantum information stored in the isolated subgap levels of superconducting islands.

Kitaev chain is a theoretical model of a one-dimensional topological superconductor with Majorana zero modes at the two ends of the chain. With the goal of emulating this model, we build a chain of three quantum dots in a semiconductor nanowire. We observe Andreev bound states in each of the three dots and study their magnetic field and gate voltage dependence. Theory indicates that triple dot states acquire Majorana polarization when Andreev states in all three dots reach zero energy in a narrow range of magnetic field. In our device Andreev states in one of the dots reach zero energy at a lower field than in other two, placing the Majorana regime out of reach. Devices with greater uniformity or with independent control over superconductor-semiconductor coupling should can realize the Kitaev chain with high yield. Due to its overall tunability and design flexibility the quantum dot system remains promising for quantum simulation of interesting models and in particular for modular topological quantum devices., Comment: Full data and code are available on Zenodo https://zenodo.org/communities/frolovlab/

Semiconductor-superconductor hybrids are commonly used in research on topological quantum computation. Traditionally, top-down approaches involving dry or wet etching are used to define the device geometry. These often aggressive processes risk causing damage to material surfaces, giving rise to scattering sites particularly problematic for quantum applications. Here, we propose a method that maintains the flexibility and scalability of selective area grown nanowire networks while omitting the necessity of etching to create hybrid segments. Instead, it takes advantage of directional growth methods and uses bottom-up grown InP structures as shadowing objects to obtain selective metal deposition. The ability to lithographically define the position and area of these objects, and to grow a predefined height, ensures precise control of the shadowed region. We demonstrate the approach by growing InSb nanowire networks with well-defined Al and Pb islands. Cross-section cuts of the nanowires reveal a sharp, oxide-free interface between semiconductor and superconductor. By growing InP structures on both sides of in-plane nanowires, a combination of Pt and Pb can independently be shadow deposited, enabling a scalable and reproducible in-situ device fabrication. The semiconductor-superconductor nanostructures resulting from this approach are at the forefront of material development for Majorana based experiments.

Strong spin-orbit semiconductor nanowires coupled to a superconductor are predicted to host Majorana zero modes. Exchange (braiding) operations of Majorana modes form the logical gates of a topological quantum computer and require a network of nanowires. Here, we develop an in-plane selective-area growth technique for InSb-Al semiconductor-superconductor nanowire networks with excellent quantum transport properties. Defect-free transport channels in InSb nanowire networks are realized on insulating, but heavily mismatched InP substrates by 1) full relaxation of the lattice mismatch at the nanowire/substrate interface on a (111)B substrate orientation, 2) nucleation of a complete network from a single nucleation site, which is accomplished by optimizing the surface diffusion length of the adatoms. Essential quantum transport phenomena for topological quantum computing are demonstrated in these structures including phase-coherent transport up to 10 $\mu$m and a hard superconducting gap accompanied by 2$e$-periodic Coulomb oscillations with an Al-based Cooper pair island integrated in the nanowire network., Comment: Data repository is available at https://doi.org/10.5281/zenodo.4589484 . Author version of the text before peer review, while see DOI for the published version

In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topological quantum matter, two-dimensional materials and their van der Waals heterostructures, Moire materials, Floquet time crystals, as well as materials and devices for quantum computation with Majorana fermions. In this Roadmap collection we aim to capture a snapshot of the most recent developments in the field, and to identify outstanding challenges and emerging opportunities. The format of the Roadmap, whereby experts in each discipline share their viewpoint and articulate their vision for quantum materials, reflects the dynamic and multifaceted nature of this research area, and is meant to encourage exchanges and discussions across traditional disciplinary boundaries. It is our hope that this collective vision will contribute to sparking new fascinating questions and activities at the intersection of materials science, condensed matter physics, device engineering, and quantum information, and to shaping a clearer landscape of quantum materials science as a new frontier of interdisciplinary scientific inquiry., Comment: 93 pages, 27 figures

We report electron transport studies on InSb-Al hybrid semiconductor-superconductor nanowire devices. Tunnelling spectroscopy is used to measure the evolution of subgap states while varying magnetic field and voltages applied to various nearby gates. At magnetic fields between 0.7 and 0.9 T, the differential conductance contains large zero bias peaks (ZBPs) whose height reaches values on the order 2e2/h. We investigate these ZBPs for large ranges of gate voltages in different devices. We discuss possible interpretations in terms of disorder-induced subgap states, Andreev bound states and Majorana zero modes., Comment: This manuscript replaces "Quantized Majorana conductance" Nature 556, 74 (2018). Technical errors in Nature 556, 74 (2018) are corrected and the original claims now have a wider interpretation. A Retraction Note (in preparation) on Nature 556, 74 (2018) will include a detailed description of errors and the corrected data analyses

Recent advances in nanowire synthesis have enabled the realization of crystal phases that in bulk are attainable only under extreme conditions, i.e. high temperature and/or high pressure. For group IV semiconductors this means access to hexagonal-phase SixGe1-x nanostructures (with a 2H type of symmetry), which are predicted to have a direct band gap for x up to 0.5 - 0.6 and would allow the realization of easily processable optoelectronic devices. Exploiting the quasi-perfect lattice matching between GaAs and Ge, we synthesized hexagonal phase GaAs-Ge and GaAs-SixGe1-x core-shell nanowires with x up to 0.59. By combining position-, polarization- and excitation wavelength-dependent u-Raman spectroscopy studies with first-principles calculations, we explore the full lattice dynamics of these materials. In particular, by obtaining frequency-composition calibration curves for the phonon modes, investigating the dependence of the phononic modes on the position along the nanowire, and exploiting resonant Raman conditions to unveil the coupling between lattice vibrations and electronic transitions, we lay the grounds for a deep understanding of the phononic properties of 2H-SixGe1-x nanostructured alloys and of their relationship with crystal quality, chemical composition, and electronic band structure.

Semiconducting-superconducting nanowires attract widespread interest owing to the possible presence of non-abelian Majorana zero modes, which hold promise for topological quantum computation. However, the search for Majorana signatures is challenging because reproducible hybrid devices with desired nanowire lengths and material parameters need to be reliably fabricated to perform systematic explorations in gate voltages and magnetic fields. Here, we exploit a fabrication platform based on shadow walls that enables the in-situ, selective and consecutive depositions of superconductors and normal metals to form normal-superconducting junctions. Crucially, this method allows to realize devices in a single shot, eliminating fabrication steps after the synthesis of the fragile semiconductor/superconductor interface. At the atomic level, all investigated devices reveal a sharp and defect-free semiconducting-superconducting interface and, correspondingly, we measure electrically a hard induced superconducting gap. While our advancement is of crucial importance for enhancing the yield of complex hybrid devices, it also offers a straightforward route to explore new material combinations for hybrid devices.

The realization of a topological qubit calls for advanced techniques to readily and reproducibly engineer induced superconductivity in semiconductor nanowires. Here, we introduce an on-chip fabrication paradigm based on shadow walls that offers substantial advances in device quality and reproducibility. It allows for the implementation of novel quantum devices and ultimately topological qubits while eliminating many fabrication steps such as lithography and etching. This is critical to preserve the integrity and homogeneity of the fragile hybrid interfaces. The approach simplifies the reproducible fabrication of devices with a hard induced superconducting gap and ballistic normal-/superconductor junctions. Large gate-tunable supercurrents and high-order multiple Andreev reflections manifest the exceptional coherence of the resulting nanowire Josephson junctions. Our approach enables, in particular, the realization of 3-terminal devices, where zero-bias conductance peaks emerge in a magnetic field concurrently at both boundaries of the one-dimensional hybrids.

Detecting the transmission phase of a quantum dot via interferometry can reveal the symmetry of the orbitals and details of electron transport. Crucially, interferometry will enable the read-out of topological qubits based on one-dimensional nanowires. However, measuring the transmission phase of a quantum dot in a nanowire has not yet been established. Here, we exploit recent breakthroughs in the growth of one-dimensional networks and demonstrate interferometric read-out in a nanowire-based architecture. In our two-path interferometer, we define a quantum dot in one branch and use the other path as a reference arm. We observe Fano resonances stemming from the interference between electrons that travel through the reference arm and undergo resonant tunnelling in the quantum dot. Between consecutive Fano peaks, the transmission phase exhibits phase lapses that are affected by the presence of multiple trajectories in the interferometer. These results provide critical insights for the design of future topological qubits., Comment: to be published in Nature Communications

We characterize InSb quantum dots induced by bottom finger gates within a nanowire that is grown via the vapor-liquid-solid process. The gates are separated from the nanowire by an exfoliated 35\,nm thin hexagonal BN flake. We probe the Coulomb diamonds of the gate induced quantum dot exhibiting charging energies of $\sim 2.5\,\mathrm{meV}$ and orbital excitation energies up to $0.3\,\mathrm{meV}$. The gate hysteresis for sweeps covering 5 Coulomb diamonds reveals an energy hysteresis of only $60\mathrm{\mu eV}$ between upwards and downwards sweeps. Charge noise is studied via long-term measurements at the slope of a Coulomb peak revealing potential fluctuations of $\sim 1\,\mu \mathrm{eV}/\mathrm{\sqrt{Hz}}$ at 1\,Hz. This makes h-BN the dielectric with the currently lowest gate hysteresis and lowest low-frequency potential fluctuations reported for low-gap III-V nanowires. The extracted values are similar to state-of-the art quantum dots within Si/SiGe and Si/SiO${_2}$ systems.

Signatures of Majorana zero modes (MZMs), which are the building blocks for fault-tolerant topological quantum computing, have been observed in semiconductor nanowires (NW) with strong spin-orbital-interaction (SOI), such as InSb and InAs NWs with proximity-induced superconductivity. Realizing topological superconductivity and MZMs in this most widely-studied platform also requires eliminating spin degeneracy, which is realized by applying a magnetic field to induce a helical gap. However, the applied field can adversely impact the induced superconducting state in the NWs and also places geometric restrictions on the device, which can affect scaling of future MZM-based quantum registers. These challenges could be circumvented by integrating magnetic elements with the NWs. With this motivation, in this work we report the first experimental investigation of spin transport across InSb NWs, which are enabled by devices with ferromagnetic (FM) contacts. We observe signatures of spin polarization and spin-dependent transport in the quasi-one-dimensional ballistic regime. Moreover, we show that electrostatic gating tunes the observed magnetic signal and also reveals a transport regime where the device acts as a spin filter. These results open an avenue towards developing MZM devices in which spin degeneracy is lifted locally, without the need of an applied magnetic field. They also provide a path for realizing spin-based devices that leverage spin-orbital states in quantum wires., Comment: 30 pages, 12 figures

We present a Josephson junction based on a Ge-Si core-shell nanowire with transparent superconducting Al contacts, a building block which could be of considerable interest for investigating Majorana bound states, superconducting qubits and Andreev (spin) qubits. We demonstrate the dc Josephson effect in the form of a finite supercurrent through the junction, and establish the ac Josephson effect by showing up to 23 Shapiro steps. We observe multiple Andreev reflections up to the sixth order, indicating that charges can scatter elastically many times inside our junction, and that our interfaces between superconductor and semiconductor are transparent and have low disorder.

We show a hard induced superconducting gap in a Ge-Si nanowire Josephson transistor up to in-plane magnetic fields of $250$ mT, an important step towards creating and detecting Majorana zero modes in this system. A hard induced gap requires a highly homogeneous tunneling heterointerface between the superconducting contacts and the semiconducting nanowire. This is realized by annealing devices at $180$ $^\circ$C during which aluminium inter-diffuses and replaces the germanium in a section of the nanowire. Next to Al, we find a superconductor with lower critical temperature ($T_\mathrm{C}=0.9$ K) and a higher critical field ($B_\mathrm{C}=0.9-1.2$ T). We can therefore selectively switch either superconductor to the normal state by tuning the temperature and the magnetic field and observe that the additional superconductor induces a proximity supercurrent in the semiconducting part of the nanowire even when the Al is in the normal state. In another device where the diffusion of Al rendered the nanowire completely metallic, a superconductor with a much higher critical temperature ($T_\mathrm{C}=2.9$ K) and critical field ($B_\mathrm{C}=3.4$ T) is found. The small size of diffusion-induced superconductors inside nanowires may be of special interest for applications requiring high magnetic fields in arbitrary direction.

The growth of Sn-rich group-IV semiconductors at the nanoscale provides new paths for understanding the fundamental properties of metastable GeSn alloys. Here, we demonstrate the effect of the growth conditions on the morphology and composition of Ge/GeSn core/shell nanowires by correlating the experimental observations with a theoretical interpretation based on a multi-scale approach. We show that the cross-sectional morphology of Ge/GeSn core/shell nanowires changes from hexagonal to dodecagonal upon increasing the supply of the Sn precursor. This transformation strongly influences the Sn distribution as a higher Sn content is measured under the {112} growth front. Ab-initio DFT calculations provide an atomic-scale explanation by showing that Sn incorporation is favored at the {112} surfaces, where the Ge bonds are tensile-strained. A phase-field continuum model was developed to reproduce the morphological transformation and the Sn distribution within the wire, shedding light on the complex growth mechanism and unveiling the relation between segregation and faceting. The tunability of the photoluminescence emission with the change in composition and morphology of the GeSn shell highlights the potential of the core/shell nanowire system for opto-electronic devices operating at mid-infrared wavelengths.

We study superconducting quantum interference in InSb flake Josephson junctions. An even-odd effect in the amplitude and periodicity of the superconducting quantum interference pattern is found. Interestingly, the occurrence of this pattern coincides with enhanced conduction at both edges of the flake, as is deduced from measuring a SQUID pattern at reduced gate voltages. We identify the specific crystal facet of the edge with enhanced conduction, and confirm this by measuring multiple devices. Furthermore, we argue the even-odd effect is due to crossed Andreev reflection, a process where a Cooper pair splits up over the two edges and recombines at the opposite contact. An entirely $h/e$ periodic SQUID pattern, as well as the observation of both even-odd and odd-even effects, corroborates this conclusion. Crossed Andreev reflection could be harnessed for creating a topological state of matter or performing experiments on the non-local spin-entanglement of spatially separated Cooper pairs.

Strain engineering in Sn-rich group IV semiconductors is a key enabling factor to exploit the direct band gap at mid-infrared wavelengths. Here, we investigate the effect of strain on the growth of GeSn alloys in a Ge/GeSn core/shell nanowire geometry. Incorporation of Sn content in the 10-20 at.% range is achieved with Ge core diameters ranging from 50nm to 100nm. While the smaller cores lead to the formation of a regular and homogeneous GeSn shell, larger cores lead to the formation of multi-faceted sidewalls and broadened segregation domains, inducing the nucleation of defects. This behavior is rationalized in terms of the different residual strain, as obtained by realistic finite element method simulations. The extended analysis of the strain relaxation as a function of core and shell sizes, in comparison with the conventional planar geometry, provides a deeper understanding of the role of strain in the epitaxy of metastable GeSn semiconductors.

We use a Ge-Si core-shell nanowire to realise a Josephson field-effect transistor with highly transparent contacts to superconducting leads. By changing the electric field we gain access to two distinct regimes not combined before in a single device: In the accumulation mode the device is highly transparent and the supercurrent is carried by multiple subbands, while near depletion supercurrent is carried by single-particle levels of a strongly coupled quantum dot operating in the few-hole regime. These results establish Ge-Si nanowires as an important platform for hybrid superconductor-semiconductor physics and Majorana fermions.