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Large zero-bias peaks in InSb-Al hybrid semiconductor-superconductor nanowire devices

Authors :
Zhang, Hao
de Moor, Michiel W. A.
Bommer, Jouri D. S.
Xu, Di
Wang, Guanzhong
van Loo, Nick
Liu, Chun-Xiao
Gazibegovic, Sasa
Logan, John A.
Car, Diana
Veld, Roy L. M. Op het
van Veldhoven, Petrus J.
Koelling, Sebastian
Verheijen, Marcel A.
Pendharkar, Mihir
Pennachio, Daniel J.
Shojaei, Borzoyeh
Lee, Joon Sue
Palmstrøm, Chris J.
Bakkers, Erik P. A. M.
Sarma, S. Das
Kouwenhoven, Leo P.
Publication Year :
2021

Abstract

We report electron transport studies on InSb-Al hybrid semiconductor-superconductor nanowire devices. Tunnelling spectroscopy is used to measure the evolution of subgap states while varying magnetic field and voltages applied to various nearby gates. At magnetic fields between 0.7 and 0.9 T, the differential conductance contains large zero bias peaks (ZBPs) whose height reaches values on the order 2e2/h. We investigate these ZBPs for large ranges of gate voltages in different devices. We discuss possible interpretations in terms of disorder-induced subgap states, Andreev bound states and Majorana zero modes.<br />Comment: This manuscript replaces "Quantized Majorana conductance" Nature 556, 74 (2018). Technical errors in Nature 556, 74 (2018) are corrected and the original claims now have a wider interpretation. A Retraction Note (in preparation) on Nature 556, 74 (2018) will include a detailed description of errors and the corrected data analyses

Details

Database :
arXiv
Publication Type :
Report
Accession number :
edsarx.2101.11456
Document Type :
Working Paper