Kazmi, Jamil, Bukhari, Syed Samee ul Hassan, Kazmi, Jamal, Raza, Syed Raza Ali, Shah, Jafar Hussain, Jalil, Abdul, and Mohamed, Mohd Ambri
Vanadium oxide (VO x) has demonstrated significant potential in various applications, including sensors (included but not limited to photodetection), smart windows, and energy storage devices, attributed to its pronounced semiconductor-to-metal transition near 340 K, coupled with a structural transition. However, the requirement for high-temperature synthesis to achieve the desired phases for these applications has limited its broader utilization, particularly in contexts where high temperatures are impractical. Here, we examined the effect of thermal annealing on the structural, electronic, and photodetection properties of VO x / p- Si heterojunctions fabricated via dip coating. VO x films were categorized into three types: pristine (VO x-1), annealed at 300 °C (VO x-2), and 500 °C (VO x-3). X-ray diffraction analysis confirmed hydrated V 2 O 5 in VO 1-x and VO x-2 , while VO x-3 was pure and crystalline V 2 O 5. Significantly, the band gap narrowed from 2.75 eV in VO x-1 to 2.46 eV in VO x-3 , a result attributed to grain growth and the consequential attenuation of quantum confinement effects. The DFT calculations implemented through the VASP code supported these findings, revealing an annealing-induced increase in the work function, revealing enhanced surface electronic properties favourable to photodetection. The electrical properties of the PN heterojunction Ag/ n- VO x / p- Si/Ag with Ag/ n- VO x terminal grounded showed a transition from ohmic-like in VO x-1 to rectifying behaviour for VO x-2 and VO x-3 with dark condition reverse bias current larger than the forward bias current, showing typical Schottky junction type contact between p- Si and n- VO x. This behaviour highlights the role of annealing in modulating the interface properties between p- Si and n- VO x. Notably, the heterojunctions demonstrated superior photodetection across IR, red, green, blue, and UV spectra, with performance metrics like responsivity and sensitivity markedly improved post-annealing, attributed to increased crystallinity and reduced interface traps and work function tuning. Additionally, the devices exhibited rapid transient responses under periodic LED illumination, highlighting their potential for advanced photodetection applications. The study explores the enhancement of photodetector efficiency through thermal annealing of vanadium oxide on p- Si substrates. Annealing at 300 °C and 500 °C leads to significant improvements in crystal structure and electronic properties, confirmed by X-ray diffraction and DFT calculations. The annealed VO x films show a narrowed band gap, higher work function, and transition from ohmic to rectifying behaviour in electrical characteristics. Photodetection metrics like responsivity and sensitivity improve markedly post-annealing, with rapid response times under LED illumination, highlighting the potential for advanced photodetector applications across a broad spectral range. [Display omitted] • Thermal annealing tunes electrical, optical, and structural properties of dip-coated V2O5 on p-Si. • X-ray Diffraction and optical absorption confirm dehydration, crystallization, and bandgap narrowing. • DFT calculations reveal an annealing-induced increase in work function. • Work function tuning enhances photoresponsivity and rapid transient photocurrents across UV–Vis–NIR spectra. • Heterojunctions exhibit superior performance metrics under LED illumination. [ABSTRACT FROM AUTHOR]