5 results on '"B. Panicaud"'
Search Results
2. Clifford Algebra Cℓ 3(ℂ) for Applications to Field Theories
- Author
-
B. Panicaud, Laboratoire des Systèmes Mécaniques et d'Ingénierie Simultanée (LASMIS), Institut Charles Delaunay (ICD), and Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS)-Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
[PHYS]Physics [physics] ,Multivector ,Physics and Astronomy (miscellaneous) ,Quaternion algebra ,General Mathematics ,010102 general mathematics ,Universal geometric algebra ,Clifford algebra ,01 natural sciences ,Algebra ,Filtered algebra ,Geometric algebra ,Spacetime algebra ,0103 physical sciences ,Algebra representation ,0101 mathematics ,010306 general physics ,Mathematics - Abstract
International audience; The multivectorial algebras present yet both an academic and a technological interest. Difficulties can occur for their use. Indeed, in all applications care is taken to distinguish between polar and axial vectors and between scalars and pseudo scalars. Then a total of eight elements are often considered even if they are not given the correct name of multivectors. Eventually because of their simplicity, only the vectorial algebra or the quaternions algebra are explicitly used for physical applications. Nevertheless, it should be more convenient to use directly more complex algebras in order to have a wider range of application. The aim of this paper is to inquire into one particular Clifford algebra which could solve this problem. The present study is both didactic concerning its construction and pragmatic because of the introduced applications. The construction method is not an original one. But this latter allows to build up the associated real algebra as well as a peculiar formalism that enables a formal analogy with the classical vectorial algebra. Finally several fields of the theoretical physics will be described thanks to this algebra, as well as a more applied case in general relativity emphasizing simultaneously its relative validity in this particular domain and the easiness of modeling some physical problems.
- Published
- 2011
- Full Text
- View/download PDF
3. Investigation of TSV induced thermo-mechanical stress: Implementation of piezoresistive sensors and correlation with simulation
- Author
-
Komi Atchou Ewuame, Sebastien Gallois-Garreignot, Vincent Fiori, Pierre Olivier Bouchard, Sylvain Lionti, Karim Inal, Herve Jaouen, Clement Tavernier, STMicroelectronics [Crolles] (ST-CROLLES), Centre de Mise en Forme des Matériaux (CEMEF), MINES ParisTech - École nationale supérieure des mines de Paris, Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS), M. François, G. Montay, B. Panicaud, and D. Retraint and E. Rouhaud
- Subjects
Residual Stress ,Materials science ,FEM Simulation ,02 engineering and technology ,01 natural sciences ,law.invention ,[SPI.MAT]Engineering Sciences [physics]/Materials ,Stress (mechanics) ,Thermomechanics ,Residual stress ,law ,0103 physical sciences ,Microelectronics ,Electrical measurements ,010306 general physics ,Through-silicon via ,business.industry ,Cauchy stress tensor ,Transistor ,General Engineering ,Piezoresistive Stress Sensor ,Structural engineering ,TSV ,021001 nanoscience & nanotechnology ,Piezoresistive effect ,0210 nano-technology ,business - Abstract
International audience; This work deals with a methodology to evaluate residual stresses within microelectronic devices by using MOS (Metal Oxide Semiconductor) rosette stress sensors. The stress tensor was evaluated by carrying out electrical measurements on test vehicle: the bridge from electrical to stress values was ensured by the piezoresistive relations and, prior to further in-house calibration, coefficients from literature were employed. For correlation purpose, numerical simulations were performed in order to evaluate stresses induced by TSV (Through Silicon Via). In this paper, the whole framework is described, and stress fields evaluated from in-situ electrical measurements on CMOS65 rosette sensor are compared to simulated ones. Some of the ultimate targets of this work are to develop a validated framework to deeply understand TSV induced thermo-mechanical stresses and to allow design rules definitions for products reliability and transistor performances.
- Published
- 2014
- Full Text
- View/download PDF
4. Microstrain and residual stress in thin-films made from silver nanoparticles deposited by inkjet-printing technology
- Author
-
András Borbély, Romain Cauchois, Karim Inal, Mohamed Saadaoui, Patrice Gergaud, Holst Centre, The Netherlands Organisation for Applied Scientific Research (TNO), Laboratoire Georges Friedel (LGF-ENSMSE), École des Mines de Saint-Étienne (Mines Saint-Étienne MSE), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Département Packaging et Supports Souples (PS2-ENSMSE), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-CMP-GC, Centre de Mise en Forme des Matériaux (CEMEF), MINES ParisTech - École nationale supérieure des mines de Paris, Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS), M. François, G. Montay, B. Panicaud, D. Retraint and E. Rouhaud, and Mines Paris - PSL (École nationale supérieure des mines de Paris)
- Subjects
Fabrication ,Materials science ,HOL - Holst ,Sintering ,Nanoparticle ,In Situ X-Ray Diffraction (XRD) ,Thermal treatment ,Polycrystalline thin films ,Silver nanoparticle ,[SPI.MAT]Engineering Sciences [physics]/Materials ,Residual stress ,Inkjet Printing (IJP) ,Mechanics, Materials and Structures ,Thin film ,Composite material ,TS - Technical Sciences ,Industrial Innovation ,Metallurgy ,General Engineering ,Ag Nanoparticle ,In-situ XRD ,Microstructure ,Chemistry ,Inkjet printing ,Ag nanoparticle ,Polycrystalline Thin Films - Abstract
Colloidal suspensions of nanoparticles are increasingly employed in the fabrication process of electronic devices using inkjet-printing technology and a consecutive thermal treatment. The evolution of internal stresses during the conversion of silver nanoparticle-based ink into a metallic thin-film by a thermal sintering process has been investigated by in-situ XRD using the sin2ψ method. Despite the CTE mismatch at the film/substrate interface, the residual stress in silver films (below 70 MPa) remains lower than in conventional PVD thin-films, as a result of the remaining porosity. A Warren-Averbach analysis further showed that the crystallite growth is associated with a minimization of the twin fault density and the elastic microstrain energy above 150°C. A stabilization of the microstructure and internal stress is observed above 300°C. Inkjetprinting technology thus appears as a good alternative to conventional metallization techniques and offers significant opportunities asset for interconnect and electronic packaging. cop. (2014) Trans Tech Publications, Switzerland. 'Conseil General de l'Aube'; Conseil National de la Recherche Scientifique (CNRS); et al; Grand Troyes; Proto Manufacturing; Region Champagne-Ardenne
- Published
- 2014
- Full Text
- View/download PDF
5. Gradient Microstructure Induced by Surface Mechanical Attrition Treatment (SMAT) in Magnesium Studied Using Positron Annihilation Spectroscopy and Complementary Methods.
- Author
-
Skowron K, Dryzek E, Wróbel M, Nowak P, Marciszko-Wiąckowska M, Le Joncour L, François M, Panicaud B, and Baczmański A
- Abstract
Surface mechanical attrition treatment (SMAT) was used to generate a gradient microstructure in commercial grade magnesium. Positron annihilation lifetime spectroscopy and variable energy positron beam measurements, as well as microhardness tests, electron backscatter diffraction, X-ray diffraction, and electrochemical corrosion tests, were used to investigate the created subsurface microstructure and its properties. It was found that SMAT causes an increase in dislocation density and grain refinement which results in increased hardness of the subsurface zone. The mean positron lifetime values indicate trapping of positrons in vacancies associated with dislocations and dislocation jogs. The increase of the SMAT duration and the vibration amplitude influences the depth profile of the mean positron lifetime, which reflects the defect concentration profile. Electrochemical measurements revealed that the structure induced by SMAT increases the susceptibility of magnesium to anodic oxidation, leading to the enhanced formation of hydroxide coverage at the surface and, as a consequence, to the decrease in corrosion current. No significant effect of the treatment on the residual stress was found.
- Published
- 2020
- Full Text
- View/download PDF
Catalog
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.