1. Implementation of Nanoscale Secondary‐Ion Mass Spectrometry Analyses: Application to Ni‐Based Superalloys
- Author
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Arnaud Houel, Jean Almoric, Anthony Seret, Alexis Nicolaÿ, Isabelle Berbezier, Nathalie Bozzolo, Malik Durand, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Orsay Physics, Centre de Mise en Forme des Matériaux (CEMEF), Mines Paris - PSL (École nationale supérieure des mines de Paris), and Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
focused ion beam ,Materials science ,Scanning electron microscope ,Nanotechnology ,Surfaces and Interfaces ,Condensed Matter Physics ,Focused ion beam ,secondary-ion mass spectrometry ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,orthogonal time of flight ,[SPI.MAT]Engineering Sciences [physics]/Materials ,Superalloy ,Secondary ion mass spectrometry ,Ni-based superalloys ,Materials Chemistry ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,nanoscale characterizations ,Electrical and Electronic Engineering ,Nanoscopic scale ,scanning electron microscopy - Abstract
International audience; Secondary-ion mass spectrometry (SIMS) is probably the most widely used chemical analysis technique in semiconductor science and in metallurgy because of its ultimate sensitivity to all elements and in particular to light elements providing semiquantitative information on the depth distribution of elements, for instance, doping elements (i.e., B, H), contaminants (i.e., C and O), chemical gradients, and segregation in thin films and at interfaces, etc. With the size shrinking of systems, high-resolution 3D chemical imaging is becoming a prerequisite for the development of new materials at the nanoscale and for the deep understanding of the correlation between their properties and functionalities. Herein, the development of an innovative analytical SIMS implemented in a focused ion beam (FIB) (using Ga source)/scanning electron microscope (SEM) is reported. The equipment enables to give elemental chemical mapping at very high resolution (
- Published
- 2021