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Atomically thin two-dimensional (2D) materialssuch as transition metal dichalcogenide (TMD) monolayers and hexagonal boron nitride (hBN)and their van der Waals layered preparations have been actively researched to build electronic devices such as field-effect transistors, junction diodes, tunneling devices, and, more recently, memristors. Twodimensional material memristors built in lateral form, with horizontal placement of electrodes and the 2D material layers, have provided an intriguing window into the motions of ions along the atomically thin layers. On the other hand, 2D material memristors built in vertical form with top and bottom electrodes sandwiching 2D material layers may provide opportunities to explore the extreme of the memristive performance with the atomic-scale interelectrode distance. In particular, they may help push the switching voltages to a lower limit, which is an important pursuit in memristor research in general, given their roles in neuromorphic computing. In fact, recently Akinwande et al. performed a pioneering work to demonstrate a vertical memristor that sandwiches a single MoS2 monolayer between two inert Au electrodes, but it could neither attain switching voltages below 1 V nor control the switching polarity, obtaining both unipolar and bipolar switching devices. Here, we report a vertical memristor that sandwiches two MoS2 monolayers between an active Cu top electrode and an inert Au bottom electrode. Cu ions diffuse through the MoS2 double layers to form atomic-scale filaments. The atomic-scale thickness, combined with the electrochemical metallization, lowers switching voltages down to 0.1−0.2 V, on par with the state of the art. Furthermore, our memristor achieves consistent bipolar and analogue switching, and thus exhibits the synapse-like learning behavior such as the spike-timing dependent plasticity (STDP), the very first STDP demonstration among all 2D-material-based vertical memristors. The demonstrated STDP with low swi

We present experimental and theoretical results on the propagation of magnetostatic spin waves in a film of yttrium iron garnet (YIG) for out-of-plane magnetic fields for which propagation in opposite directions is nonreciprocal in the presence of a metal layer. The plane studied is defined by the film normal n and n x k where k is the wave vector of the mode. Spin waves in this setting are classified as forward volume waves or surface waves and display non-reciprocity in the presence of an adjacent metal layer except for when H//n. The measurements are carried out in a transmission geometry, and a microwave mixer is used to measure the change of phase, and with it the evolution of wavevector, of the arriving spin wave with external magnetic field. (c) 2017 Author(s).

We report systematic measurements of the dispersion of long wavelength spin waves for a wide range of wave vectors for the magnetic field along the three principal directions defining the forward volume, backward volume and Damon-Eshbach modes of a 9.72 mu m thick film of an yttrium iron garnet obtained using lithographically patterned, multi-element, spatially resonant, antennas. Overall good agreement is found between the experimental data for the backward volume and Damon-Eshbach modes and the magnetostatic theory of Damon and Eshbach. Also, good agreement is found between the experimental data for the forward volume mode and the theory of Damon and van de Vaart. Published by AIP Publishing.