Vertical MoS2 Double-Layer Memristor with Electrochemical Metallization as an Atomic-Scale Synapse with Switching Thresholds Approaching 100 mV.

Details

Language :

English

ISSN :

15306984

Volume :

19

Issue :

4

Database :

Supplemental Index

Journal :

Nano Letters

Publication Type :

Academic Journal

Accession number :

145010138

Full Text :

https://doi.org/10.1021/acs.nanolett.8b05140