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The content of large soil fractions in soils complicates the experimental part of the research, but, the modeling method makes it possible to determine the effect of soil filler on slope stability. The article presents the results of experimental study of the strength of coarse-clastic soils with different percentages of large fractions of gravelly soil (up to 20 mm) and aggregate (up to 5 mm) in the study of slope stability. The studies were carried out on three types of experimental equipment, which confirms the reliability of the results obtained. Recommendations are given for applying the values of the strength characteristics of coarse-grained soils in calculating the stability of slopes. The results of the tests are carried out in a tray and shear testing devices. Mixture of soil fractions from 2 mm to 50 mm. Purpose of the tests is to determine the actual parameters of soil strength j and C, taking into account the effect of impurities on the stability of slopes. Reliability of the results confirmed the comparability of the results of previous tests. Tray allows for testing models of slopes composed of mixtures of sand fractions from 2 mm to 20 mm. Model sizes slopes are defined relative to the size tray. Tray dimensions ‑ length 1400 mm, width 500 mm, height 1000 mm. The design of the shear device allows to investigate coarse soils of different factions. The diameter of the fractions were tested for shear device area of 100 sm2 is from 2 mm to 20 mm. The diameter of the fractions were tested for shear device area of 1000 sm2 ‑ from 5 mm to 50 mm. The experiments were performed in the laboratory "Geotechnics in Construction" in KazGASA.

One of the most prospective applications of artificial neural networks based on memristors (ANNMs) is the development of more compact, fast, and efficient neural interfaces. This goal is achievable, as the results of a literature survey and our own research show. We have designed the ANNM as part of the neural interface for automatic registration and stimulation of bioelectrical activity of a living neuronal culture, but there are many challenges on the way to its hardware implementation, e.g., related to nonidealities of memristive devices, parasitic elements, the limited capabilities of OpAmps, and convertors. The listed above problems can affect the ANNM quality attributes, such as the operation accuracy, fault tolerance, and reliability, and have fundamental importance to practical operation. In this paper, we focus on the investigation of the ANNM fault tolerance and try to find single points of failure. The obtained information can be used in the ANNM reliability engineering.

The goal of this work is the qualitative and quantitative interpretation of experimental data obtained for the effect of additional boron ion implantation on the temperature dependence of dislocation-related luminescence (D1 line) of self-implanted silicon. This goal is motivated by the need in development of effective light emitter for silicon-based optoelectronics. The model explaining the previously established improvement of the D1 line temperature dependence is suggested and supported by computer calculations based on a set of kinetic equations taking into account the radiative and nonradiative electron transitions between energy levels.

The effect of anticancer antibiotic doxorubicin on structural organization of anionic lipid monolayers has been studied. X-ray reflectivity and grazing incidence diffraction techniques were applied to monitor the changes in 2D structure and electron density distribution of Langmuir monolayer composed of negatively charged dipalmitoylphosphatidylglycerol (DPPG) and dioleoylphosphatidylserine (DOPS). For comparison, monolayer of zwitterionic dipalmitoylphosphatidylethanolamine (DPPE) also was investigated. The presented experimental results suggest that doxorubicin interaction with anionic lipid monolayers (DPPG and DOPS) proceeds preferentially via electrostatic attraction—positively charged amino groups of doxorubicin bind to negatively charged head groups of phospholipid molecules. Based on the obtained data, the penetration of doxorubicin into the hydrophobic part of anionic lipid monolayers does not occur. X-ray measurements on DPPE monolayer indicated that doxorubicin did not cause any significant alterations of molecular packing in condensed monolayer of zwitterionic DPPE molecules.

The specific features of resistive switching, which was initiated by triangular pulses with a high-frequency sine signal imposed on them, in experimental memristor prototypes based on thin films of yttria-stabilized zirconia were examined. It was found that memristors switched by these complex signals have lower switching voltage, higher ratio of currents in low- and high-resistance states, and better long-term current stability than memristors switched by triangular pulses without the sine signal. This improvement of switching parameters is associated with resonance activation of migration of oxygen ions via vacancies in the alternating external electric field.

The formation of oxide semiconductor films of the (Mn,Co,Cu)3O4 type by radio frequency magnetron sputtering is presented. The conditions of deposition and subsequent heat treatment make it possible to obtain films with electrophysical characteristics close to those of the bulk ceramic materials used as a target for magnetron sputtering. Two variants of thermistor geometry were implemented. In the first case, the working layer of oxide semiconductor was deposited directly on the dielectric substrate (planar geometry), and in the second case on the layer with high electrical conductivity (Ni or Al) forming the inner electrode (layered geometry). The lower limit of the nominal resistance of the planar thermistor while maintaining high temperature nonlinearity is ~ 10 kΩ. The layered structure with the inner electrode makes it possible to reduce the lower limit of resistance up to ~ 50 Ω without losing the temperature nonlinearity of the thermistor. In addition, heat treatment above 450 °C or current self-heating with sufficient power output leads to the appearance of a pronounced voltage nonlinearity, which increases the thermal constant B of thermistors from 2400–3400 to 5000–5500 K. The fields of application of oxide-film structures for the correction of linear resistors and the implementation of integration approaches in the construction of linearized sensors are discussed.

The electrophysical characteristics of a multilayer memristive Au/Ta/ZrO2(Y)/TaOx/TiN structure have been studied. Electron and ion electret effects due to charge carrier trapping and ion migration polarization in the dielectric have been discovered. The influence of traps on electroforming processes and resistive switching has been established. The values of activation energy and ion and trap concentrations have been determined. The effect of resistive switching stabilization has been found, which is associated with the specific bilayer structure of TaOx and self-forming tantalum nanoclusters. The nanoclusters serve as electric field concentrators in the course of electroforming and subsequent resistive switching.

An alternative to the currently existing elemental basis for creating dynamic random-access memory and flash memory is memristor structures, i.e., two-electrode systems, whose operation is based on the resistance switching effect. In this paper, the results of studying the specific features of the production of memristor structures on the basis of copper sulfide as a promising material providing high-efficiency performance of the structures are reported. The process of copper sulfurization is considered. In this process, the surface region of the copper layer is transformed into sulfide, and the remaining part of the layer is used as the active electrode for the later formed memristor structure. It is shown that, as the concentrations of the initial chemical reagents is increased, the surface roughness of the sulfide layer significantly increases. The sulfide growth rate at optimal initial concentrations of the chemical reagents is ~30 nm/min. In studies of memristor structures, it is established that, as the copper sulfide thickness is increased, the ratio between the resistances in the low- and high-resistance states increases from 11.2 to 12.5. In the memristor structures formed in the study, the time of switching from the high- to low-resistance state is about 1.3 μs, whereas the time of switching from the low- to high-resistance state is 0.9 μs.

In this paper, the study of the dynamic pyroelectric effect under different powers of modulated heat flux in deuterated triglycine sulfate (DTGS) near the Curie point is presented. It was f...

We have studied the resistive switching in memristive structures based on 40-nm-thick yttria-stabilized zirconia (YSZ) films exposed to 6-keV Si+ ion irradiation to a total dose of 5.4 × 1015 cm–2. It is established that the ion irradiation leads to increased stability of the parameters of resistive switching in YSZ based memristive structures. This effect is related to the fact that the diameter of conducting filaments in irradiated structures is limited by lateral dimensions of the region of atomic displacement cascades (i.e., the region occupied by point defects produced by bombarding ions). The oxidation of ion-modified filaments during resistive switching proceeds more effectively and leads to increasing resistance in the high-resistance state of memristive structures.

The peculiarities of resistive switching in capacitors with yttria-stabilized hafnia layers were studied. The characteristics of current transport in the initial state and after electroforming and resistive switching at different temperatures were examined. The parameters of a small-signal equivalent circuit of a capacitor were determined for switching into low- and high-resistance states. These parameters suggest that the resistance of filaments changes after each successive switching. This provides an opportunity to use such measurements to determine the nature of resistive switching and verify the reproducibility of its parameters. The contribution of electron traps to switching was revealed. Ion migration polarization was observed at temperatures above 500 K, and the activation energy of ion migration and the ion concentration were determined. The effect of resistive switching under the influence of temperature was observed and interpreted for the first time.

The comparative study of dielectric dispersion in thin LiNbO3 films deposited by radio-frequency (RF) magnetron sputtering and laser ablation on Si substrates was carried out. It was found ...

We propose a novel concept of a hardware implementation of high-dimensional neurons with the aim of a functional simulation of the human hippocampus. To implement a high-dimensional neuron, we suggest using the arrays of trainable memristive devices as part of the custom-made software-hardware system to provide full neuronal functionality with fine-tuning of synaptic weights according to the self-learning rule. The proposed architecture can enable new efficient approaches to processing big data in artificial intelligence (AI) systems and a new generation of robots.

Here we present the current results of our crossdisciplinary group in the field of design and hardware implementation of an artificial neural network based on memristors (ANNM), which is a component of a bidirectional adaptive neural interface for automatic registration and stimulation of bioelectrical activity of a living neuronal culture. Building bidirectional biointerfaces is one of the key challenges of modern engineering and medicine, with dramatic potential impact on bioprosthetics. In this manner we place a key stepping stone towards building self-adjusting, low-power biointerfaces, themselves a foundational stepping stone towards adaptable, low-power bioprostheses.

We implement in simulation and hardware the Spike- Timing-Dependent Plasticity (STDP) rule that uses Fitzhugh-Nagumo neuron-like generators as spiking neurons and memristive device as a synapse. Weight functions in dependence of spikes delays are measured and fitted by mathematical functions suitable for designing memristive learning rules in scalabel spiking neural networks.

Structural changes under the action of Al+ irradiation have been investigated by X-ray diffraction for polymorphic Ga2O3 layers grown by halide vapor phase epitaxy on c-plane sapphire and consisting predominantly of α-phase with inclusions of e(κ)-phase. As a result of irradiation, some new reflections appear, which can be interpreted in two ways – either as a phase transition of the α- and/or e(κ)-phase to the more stable β-phase, or as a selective radiation-stimulated strain of the e(κ)-phase, i.e., an increase in the interplanar distance of a family of planes parallel to the surface. The discussed ion-stimulated phenomena have to be taken into account when utilizing ion implantation to modify Ga2O3 properties.

The study of hexagonal silicon polytypes attracts special attention due to their unique physical properties compared to the traditional cubic phase of Si. Thus, for some hexagonal phases, a significant improvement in the emission properties has been demonstrated. In this work, the luminescent properties of SiO2/Si structures irradiated with Kr+ ions at different doses and annealed at 800 °C have been systematically investigated. For such structures, a photoluminescence line at ∼ 1240 nm is observed and associated with the formation of hexagonal 9R-Si phase inclusions. It is found that the variation in the thickness of oxide film and the relative position of ion distribution profile and film/substrate interface leads to a regular change in the luminescence intensity. The nature of the observed dependencies is discussed as related mainly to the interplay between the factors contributing to the formation of 9R-Si inclusions and the generation of radiation defects in the Si substrate—centers of nonradiative recombination. The revealed regularities suggest optimal ion irradiation conditions for synthesis of optically active 9R-Si phase in diamond-like silicon.

We investigate the constructive role of an external noise signal, in the form of a low-rate Poisson sequence of pulses supplied to all inputs of a spiking neural network, consisting in maintaining for a long time or even recovering a memory trace (engram) of the image without its direct renewal (or rewriting). In particular, this unique dynamic property is demonstrated in a single-layer spiking neural network consisting of simple integrate-and-fire neurons and memristive synaptic weights. This is carried out by preserving and even fine-tuning the conductance values of memristors in terms of dynamic plasticity, specifically spike-timing-dependent plasticity-type, driven by overlapping pre- and postsynaptic voltage spikes. It has been shown that the weights can be to a certain extent unreliable, due to such characteristics as the limited retention time of resistive state or the variation of switching voltages. Such a noise-assisted persistence of memory, on one hand, could be a prototypical mechanism in a biological nervous system and, on the other hand, brings one step closer to the possibility of building reliable spiking neural networks composed of unreliable analog elements.

Building bidirectional biointerfaces is one of the key challenges of modern engineering and medicine, with dramatic potential impact on bioprosthetics. Two of the major challenges of biointerface design concern signal stability and power efficiency. The former entails: a) ensuring that biosignal inputs corresponding to the same ground truth (e.g. patient “intentions”) are recorded and interpreted consistently and b) maintaining the mapping from biointerface stimulation outputs to behavioral outputs (e.g. muscle movements). In this work we demonstrate how machine learning techniques, state-of-art nanoelectronics and microfluidics can combine forces to build and test low-power, adaptable biointerfaces that address both key challenges. Specifically, we demonstrate that: 1) we can emulate the input/output transfer characteristics of a structure biological neural network (BNN) with an artificial one (ANN), 2) it is possible to translate the resulting, “ideally trained” ANN into a hardware network using RRAM devices as synapses without significant loss of accuracy, despite concerns in the community about RRAM device reliability and 3) using a very simple mechanism of shifting the active stimulation electrode can fully restore functionality after the initial stimulation site degrades, prolonging the usable lifetime of the biointerface significantly. In this manner we place a key stepping stone towards building self-adjusting, low-power biointerfaces, themselves a foundational stepping stone towards adaptable, low-power bioprostheses.

The stochastic resonance phenomenon has been studied experimentally and theoretically for a state-of-art metal-oxide memristive device based on yttria-stabilized zirconium dioxide and tantalum pentoxide, which exhibits bipolar filamentary resistive switching of anionic type. The effect of white Gaussian noise superimposed on the sub-threshold sinusoidal driving signal is analyzed through the time series statistics of the resistive switching parameters, the spectral response to a periodic perturbation and the signal-to-noise ratio at the output of the nonlinear system. The stabilized resistive switching and the increased memristance response are revealed in the observed regularities at an optimal noise intensity corresponding to the stochastic resonance phenomenon and interpreted using a stochastic memristor model taking into account an external noise source added to the control voltage. The obtained results clearly show that noise and fluctuations can play a constructive role in nonlinear memristive systems far from equilibrium.

An original model of resistive switching of metal oxide memristive devices is proposed. The efficiency and flexibility of the approach are demonstrated by the example of experimentally realized Au/oxide/TiN structures.

The results of the study of the photoluminescence of ion-synthesized samples containing the 9R-Si phase and emitting light at a wavelength of ~ 1235 nm are presented. The structural features of the obtained nanostructures and the mechanism of the observed luminescence are discussed.

New approaches to increasing the efficiency of dislocation radiation in silicon, which is promising for use in optoelectronics, are considered. The anomalous temperature dependence of the luminescence of dislocation structures in silicon formed by implantation of Si+ ions and modified by ion doping with boron at different doses is discussed.

Synthesis of nanoparticles in insulators attracts tremendous attention due to their unique electrical and optical properties. Here, the gallium (Ga) and gallium nitride (GaN) nanoclusters have been synthesized in the silicon nitride matrix by sequential ion implantation (gallium and nitrogen ions) followed by either furnace annealing (FA) or rapid thermal annealing (RTA). The presence of Ga and GaN nanoclusters has been confirmed by Fourier-transform infrared, Raman and X-ray photoelectron spectroscopy. Thereafter, the effect of RTA and FA on the conduction of charge carriers has been studied for the fabricated devices. It is found from the current–voltage measurements that the carrier transport is controlled by the space charge limited current conduction mechanism, and the observed values of parameter m (trap density and the distribution of localized state) for the FA and RTA devices are ~2 and ~4.1, respectively. This reveals that more defects are formed in the RTA device and that FA provides better performance than RTA from the viewpoint of opto- and nano-electronic applications.

The electrical conductivity of lithium tantalate thin film on the silicon substrate was studied. The film structure was prepared by RF magnetron sputtering. In general, the current-voltage characteristics were asymmetric and similar to that of a diode. The current-voltage characteristics had several sections associated with various transport mechanisms of current carriers. The main conductivity mechanism was related to the space-charge-limited current. The current-voltage characteristics showed that there was a mismatch between the forward and backward runs. One of the reasons for such behavior is a space charge accumulation due to charge carriers which were injected from the electrode and did not relax. Resumo A condutividade elétrica de filme fino de tantalato de lítio sobre substrato de silício foi estudada. A estrutura de filme foi preparada por pulverização por magnétron RF. Em geral as características de corrente-tensão foram assimétricas e similares às de um diodo. As características de corrente-tensão tiveram várias seções associadas a vários mecanismos de transporte de portadores de corrente. O principal mecanismo de condutividade foi relacionado à corrente limitada por carga espacial. As características de corrente-tensão mostraram que havia incompatibilidade entre as conduções avante e a ré. Uma das razões para esse comportamento é um acúmulo de carga espacial devido aos portadores de carga que foram injetados no eletrodo e não relaxaram.

The barrier properties of a capacitor heterostructure based on a ferroelectric lead zirconate-titanate were investigated by using the methods of current-voltage and voltage-capacitance characteristics. The variable values of the potential barrier on the PZT-Pt interface were determined by the C-V method (from 0.5 to 1.6 eV) and the I-V method (from 0.5 to 0.7 eV). The spontaneous polarization influence on the potential barrier at the PZT-Pt interface was estimated.

The effect of the material of the metal plates (Au, Ta, W) and exposure to a high-power blue laser on the memristive characteristics of metal–insulator–semiconductor (MIS) capacitors with a Si3N4 film 6 nm thick fabricated on the basis of n+-Si is studied. It is shown that bipolar switching by the current appears only in capacitors with Au. The causes of the absence of bipolar switching in capacitors with Ta and W are explained. The switching of capacitors with Ta by the current and light and the photomemory effect are detected. It is shown that, despite the high doping level of the semiconductor substrate, it decreases the MIS memristor response rate due to a high density of surface states localized at the Si3N4/n+-Si interface. However, illumination allows a significant increase in the response rate due to a decrease in the semiconductor resistivity. The surface state densities are determined. To improve the frequency characteristics of MIS memristors, it is necessary to achieve a low surface state density.

In this work, a process solution for the formation of an array of piezo- and pyroelectric structures with the use of a matrix of nanoprofiled silica is demonstrated. It is proposed to use plasma etching through a hard mask of porous anodic alumina for the formation of the matrix. Nanoparticles of a ferroelectric copolymer of vinylidene fluoride with trifluoroethylene are formed in the pores of the matrix. The results of measurements of the piezoelectric and pyroelectric responses of this structure are presented.

Design and training principles have been proposed and tested for an artificial neural network based on metal-oxide thin-film nanostructures possessing bipolar resistive switching (memristive) effect. Experimental electronic circuit of neural network is implemented as a double-layer perceptron with a weight matrix composed of 32 memristive devices. The network training algorithm takes into account technological variations of the parameters of memristive devices. Despite the limited size of weight matrix the developed neural network model is scalable and capable of solving nonlinear classification problems. The learning and functionality of the network are demonstrated by using its computer model for the classification of activity propagation directions in simulated neuronal culture.

Resistive switching and adaptive behavior of resistive state in response to electrical stimulation has been studied for the silicon oxide based memristive devices subjected to electroforming in the conditions of current compliance in comparison with the analogous memristive devices after electroforming without any current limitation. The limitation of current and temperature during electroforming affects the parameters of growing conductive filament ensembles and reduction-oxidation reactions resulting in a gradual character and a wide dynamic range of resistance change important for neuromorphic applications.

An approach to formation and training of an artificial neural network (ANN) based on thin-film memristive metal–oxide–metal nanostructures, which exhibit the effect of bipolar resistive switching, has been proposed. An experimental electric circuit of a small-sized ANN (a two-layer perceptron with 32 memristive elements) has been constructed. An algorithm for formation of weighting coefficients (ANN training), which takes into account probable spread of technological parameters of memristive structures has been developed.

The effect of boron implantation on the light-emitting properties of dislocation structures formed in silicon by Si+ ion implantation with subsequent annealing is studied. It is shown that the implantation of B+ ions has a significant effect on the dislocation-related luminescence intensity, spectrum and the temperature dependence of the D1-band intensity. It is found that the temperature dependence is nonmonotonous and involves two regions, in which the D1-band intensity increases with increasing temperature and has two well-pronounced maxima at 20 K and 60–70 K. The maximum at 20 K is associated with the morphological features of the dislocation structure under study, whereas the maximum at 60–70 K is associated with the additional implantation of the boron impurity into the dislocation region of the samples. It is established that the intensities of the experimentally observed maxima and the position of the high-temperature maximum depend on the implanted boron concentration.

Gallium oxide nanocrystals encapsulated in Al2O3 film on a Si substrate have been synthesized by using ion implantation followed by thermal annealing at 800 °C or 900 °C. Formation of $\beta $ -Ga2O3 nanocrystals is confirmed by transmission electron microscopy. The photoresponse of a photodetector fabricated on the implanted layer by the deposition of interdigitated electrode pattern is estimated by analyzing the current–voltage characteristics. The ratio of photocurrent at the wavelength of 250 nm and a voltage of 4 V to dark current around ~15 is found for the sample annealed at 900 °C. The spectral dependence of photoresponse for this sample demonstrates excellent solar-blind ultraviolet characteristics in the wavelength range of 250–270 nm with a rejection ratio 42 at the bias of 1 V. At the bias of 4 V, the responsivity of 50 mA/ $\mu \text{W}$ upon illumination at 250 nm and a cutoff at 280 nm are observed for the 900 °C annealing. The sample annealed at 800 °C shows lower ultraviolet responsivity due to the high density of defects. The data are analyzed in relation to the generation of carriers in Ga2O3 nanocrystals and their transport in the damaged Al2O3 matrix. The reported results pave the way toward the fabrication of next generation high sensitive solar-blind photodetectors.

The frequency dependence of real (e′) and imaginary (e″) components of the complex dielectric permittivity has been determined for tin-thiohypodiphosphate Sn2P2S6 films in the temperature region from 150 to 400 K. There are two dielectric relaxation regions in the frequency range between 10−1 and 107 Hz. The high-frequency dielectric dispersion region at 103–107 Hz exhibits Debye type behaviour due to a semiconductor-metal interface barrier similar to a Schottky barrier. At low frequencies from 10−1 to 103 Hz, dielectric response is nearly a “flat loss” at least in the low-temperature region. At elevated temperature, the flat dispersion region disappears and a strong linear decrease of e″ (ω) is observed because of the dc conductivity.

The thin-film structures made of LiNbO3 and obtained via laser ablation and magnetron sputtering are studied with volt-farad and volt-ampere characteristics. A potential barrier on the Si–LiNbO3 interface was found for both types of the films with the capacitance-voltage characteristics. The current-voltage characteristics showed that there are several conduction mechanisms in the structures studied. The Poole–Frenkel effect and the currents limited by a space charge mainly contribute to the electrical conductivity in the LiNbO3 film produced with the laser ablation method. The currents limited by a space charge contribute to the main mechanism in the film heterostructure obtained with the magnetron sputtering method.

To use silicon in emerging photonic devices, it is necessary to improve its luminescent properties. In this regard, hexagonal modifications of silicon are attracting great attention, as they demonstrate an increased emissivity in comparison with cubic silicon. It has been recently established that, upon irradiation of the SiO2/Si structure with Kr+ ions, a photoluminescence line appears, which is associated with the formation of the 9R-Si hexagonal phase. In this work, we compare the changes in photoluminescence under irradiation with As+ and Kr+, which are close in atomic mass and radius but differ in chemical nature. Irradiation and subsequent annealing were carried out under identical conditions with ion energy of 80 keV, dose of 5·1016 cm−2 and annealing temperature of 800 °C (30 min in N2). It is found that photoluminescence line at around 1240 nm is observed in both cases, but the intensity is significantly higher and the maximum is shifted by 5 nm towards shorter wavelengths for As+ irradiation compared to Kr+ irradiation. The results are interpreted taking into account the different degree of out-diffusion of As and Kr associated with their different chemical nature.

Bipolar resistive switching of the metal-insulator-semiconductor (MIS) capacitor-like structures with the inert Au top electrode and Si3N4 dielectric nanolayer (6 nm thick) has been investigated. The effect of highly doped n+-Si substrate is revealed related to the changes in semiconductor space charge region on the small-signal parameters of parallel and serial equivalent circuit models measured in the high- and low-resistive capacitor states, as well as under laser illumination. The increase in conductivity of semiconductor capacitor plate significantly reduces the charging and discharging times of capacitor-like structures.

In this paper we demonstrate a technological route for the formation of an array of memristor structures using a self-assembly matrix of porous anodic aluminum oxide. We propose using a porous alumina matrix as a solid mask to develop pores in the dense silicon oxide layer below the mask, in which a material characterized by the possibility of resistive switching is formed. The merit of this mask should include reproducibility and the high-precision control of geometric parameters of the pores. The current-voltage characteristics of a memristor structure based on solid electrolyte Cu2S are determined.

The results of a study of film composites based on polyvinylidene fluoride with carbon nanotubes (CNTs) by dielectric relaxation spectroscopy are presented. For composite samples containing more than 0.5 wt % of nanotubes, nonlinear current–voltage characteristics are obtained. The concentration dependences of the electrical conductivity of the composites are examined and the percolation threshold for the samples under study is determined. It is shown that an insignificant increase in the electrical conductivity of the composites is observed even upon filling with 0.2 wt % of CNTs, whereas the electrical conductivity becomes three orders of magnitude higher upon the introduction of 1 wt% of CNTs and is seven orders of magnitude higher at more than 3 wt %, compared with the unfilled polymer. This confirms that CNTs are promising for the development of electrically conducting composites and film materials on the basis of polyvinylidene fluoride.

The preparation method of magnetoelectric multilayered ceramic heterostructures was suggested, and series of the rectangular and disk shape samples were produced on the base of this method. The maximum value of a magnetoelectric voltage coefficient αE = 35 V/(cm × Oe) was observed for the eleven-layered rectangular specimen at the electromechanical resonance frequency fr = 144 kHz, НDC = 84 Oe, and НAC = 2.5 Oe. The sensitivity to static magnetic fields is equal to 3.5 × 10−2 Oe, and the alternating field sensitivity is equal to 8 × 10−3 Oe.

A physical model of synaptically coupled neuron-like generators interacting via a memristive device has been presented. The model simulates the synaptic transmission of pulsed signals between brain neurons. The action on the receiving generator has been performed via a memristive device that demonstrates adaptive behavior. It has been established that the proposed coupling channel provides the forced synchronization with the parameters depending on the memristive device sensitivity. Synchronization modes 1: 1 and 2: 1 have been experimentally observed.

In this paper, a new approach to combined 2D printing of local layers of different materials on the same set up have been considered. A three-coordinate moving system has been developed, equipped with a heated table, a system for supplying precursors and gas to the printing zone, as well as a printing device with three print heads: inkjet, e-jet and aerojet. The advantages and disadvantages of these methods are discussed on the specific examples. It was shown that the methods have various resolution (e-jet – 2 μm, aerojet – 5 μm, inkjet – 7 μm). Moreover, the restrictions imposed on the printing method of higher resolution can be overcome using another method. Thus, a combination of these methods in one process will allow the formation of multilayer functional elements.

The article proposes a new method of the formation of memristor structures based on the oxides, sulfides and selenides to perform basic arithmetic operations. Moreover, was proposed an approach to control the resistance of a memristor. The proposed schemes are characterized by simplicity, and can be compactly implemented in integral design.