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Electrophysical Characteristics of Multilayer Memristive Nanostructures Based on Yttria-Stabilized Zirconia and Tantalum Oxide
- Source :
- Technical Physics. 65:284-290
- Publication Year :
- 2020
- Publisher :
- Pleiades Publishing Ltd, 2020.
-
Abstract
- The electrophysical characteristics of a multilayer memristive Au/Ta/ZrO2(Y)/TaOx/TiN structure have been studied. Electron and ion electret effects due to charge carrier trapping and ion migration polarization in the dielectric have been discovered. The influence of traps on electroforming processes and resistive switching has been established. The values of activation energy and ion and trap concentrations have been determined. The effect of resistive switching stabilization has been found, which is associated with the specific bilayer structure of TaOx and self-forming tantalum nanoclusters. The nanoclusters serve as electric field concentrators in the course of electroforming and subsequent resistive switching.
- Subjects :
- 010302 applied physics
Materials science
Physics and Astronomy (miscellaneous)
business.industry
Tantalum
chemistry.chemical_element
Dielectric
01 natural sciences
010305 fluids & plasmas
Nanoclusters
chemistry
0103 physical sciences
Electroforming
Optoelectronics
Charge carrier
Electret
Tin
business
Yttria-stabilized zirconia
Subjects
Details
- ISSN :
- 10906525 and 10637842
- Volume :
- 65
- Database :
- OpenAIRE
- Journal :
- Technical Physics
- Accession number :
- edsair.doi...........f573144bdaf24d353b13eb0336d976e8