Author: "Alcatel-Thalès III-V lab (III-V Lab)" - Searchworks@Jio Institute Digital Library Search Results

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372 results on '"Alcatel-Thalès III-V lab (III-V Lab)"'

1. Optimized ohmic contacts for InAlGaN/GaN HEMTs

Author: Ruterana, Pierre, Chauvat, Marie, Morales, Magali, Medjdoub, Farid, Gamarra, Piero, Dua, Christian, Delage, Sylvain, Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Propriétés des Matériaux pour les Economies d'Energie (PM2E), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Alcatel-Thales III-V Lab (III-V Lab), THALES [France], Alcatel-Thales III-V Lab (III-V Lab ), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, This work was partially supported by the Region Normandie under project PLACANANO, convention 18E01651, Renatech Network, PCMP CHOP, ANR-14-CE26-0022,LHOM,Couches d'InAlN et hétérostructures optimisées pour la future génération de transistors hyperfréquences de puissance(2014), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), ANR-11-EQPX-0020,GENESIS,Groupe d'Etudes et de Nanoanalyses des Effets d'IrradiationS(2011), European Project: 662322,H2020,ECSEL-2014-1,OSIRIS(2015), Centre de recherche sur les Ions, les MAtériaux et la Photonique [CIMAP - UMR 6252], Propriétés des Matériaux pour les Economies d'Energie [PM2E], WIde baNd gap materials and Devices - IEMN [WIND - IEMN], Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN], Alcatel-Thales III-V Lab [III-V Lab], Alcatel-Thales III-V Lab [III-V Lab ], and Alcatel-Thalès III-V lab [III-V Lab]
Subjects: [PHYS]Physics [physics], [SPI]Engineering Sciences [physics]
Abstract: International audience; In this work, we have carried out a detailed transmission electron microscopy investigation on ohmic contacts in InAl GaN/GaN high electron mobility transistors consisting of Ti/Al/Ni/Au deposited by evaporation electron beam followed by a rapid thermal annealing at 875°C for 30s under N2 atmosphere. Subsequent to an optimized surface preparation, prior to the metal deposition, it has been possible to systematically obtain a contact resistance of 0.15-0.16 Ω.mm instead of the usual 0.5-0.6 Ω.mm. This is comparable to the state of the art results which have been published subsequent to more complex processes including molecular beam regrowth.
Published: 2022

2. InP:S/AlInAs:C Tunnel Junction Grown by MOVPE for Photovoltaic Applications

Author: Alexandre Larrue, Stefano Soresi, Gwenaëlle Hamon, José Alvarez, Jean Decobert, Mauricio P. Pires, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Total S.A. Renewables, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Instituto de Física da Universidade Federal do Rio de Janeiro (IF / UFRJ), Universidade Federal do Rio de Janeiro (UFRJ), THALES [France]-ALCATEL, Alcatel-Thalès III-V lab ( III-V Lab ), Laboratoire Génie électrique et électronique de Paris ( GeePs ), Centre National de la Recherche Scientifique ( CNRS ) -CentraleSupélec-Université Pierre et Marie Curie - Paris 6 ( UPMC ) -Université Paris-Sud - Paris 11 ( UP11 ), Instituto de Fisica, UFRJ ( IFUFRJ ), and Universidade Federal do Rio de Janeiro [Rio de Janeiro] ( UFRJ )
Subjects: Materials science, Band gap, [ SPI.MAT ] Engineering Sciences [physics]/Materials, 02 engineering and technology, 7. Clean energy, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, [ SPI.NRJ ] Engineering Sciences [physics]/Electric power, Tunnel junction, 0103 physical sciences, Materials Chemistry, Metalorganic vapour phase epitaxy, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Quantum tunnelling, 010302 applied physics, business.industry, Photovoltaic system, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Heterojunction, Surfaces and Interfaces, Semiconductor device, 021001 nanoscience & nanotechnology, Condensed Matter Physics, [ SPI.TRON ] Engineering Sciences [physics]/Electronics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, [SPI.TRON]Engineering Sciences [physics]/Electronics, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [ SPI.OPTI ] Engineering Sciences [physics]/Optics / Photonic, 0210 nano-technology, business, Current density
Abstract: International audience; Multijunction solar cells based on III–V compounds are one of the most effective possibilities to achieve high efficiencies for space and terrestrial applications. In this work, AlInAs:C/InP:S tunnel junctions are fabricated using MOVPE. Type‐II interface band alignment of AlInAs/InP heterostructure is ideal for increasing the photogenerated carriers tunneling. Furthermore, wide bandgaps ensure a high transmission of the incident light. The J–V characteristics of the final devices show very good results in terms of tunneling peak current density (1000 A cm−2) and specific resistance at low applied bias, making them compatible for photovoltaic applications.
Published: 2018
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3. Ultrathin Epitaxial Silicon Solar Cells with Inverted Nanopyramid Arrays for Efficient Light Trapping

Author: Christophe Dupuis, Romain Cariou, Loïc Lalouat, Wanghua Chen, Pere Roca i Cabarrocas, Emmanuel Drouard, Christian Seassal, Stéphane Collin, Anne Gaucher, Andrea Cattoni, Martin Foldyna, Institut Lavoisier de Versailles ( ILV ), Université de Versailles Saint-Quentin-en-Yvelines ( UVSQ ) -Centre National de la Recherche Scientifique ( CNRS ), Laboratoire de photonique et de nanostructures ( LPN ), Centre National de la Recherche Scientifique ( CNRS ), Faculté Polytechnique de Mons, Laboratoire de physique des interfaces et des couches minces [Palaiseau] ( LPICM ), École polytechnique ( X ) -Centre National de la Recherche Scientifique ( CNRS ), Alcatel-Thalès III-V lab ( III-V Lab ), THALES-ALCATEL, Laboratoire Interdisciplinaire Carnot de Bourgogne ( LICB ), Université de Bourgogne ( UB ) -Centre National de la Recherche Scientifique ( CNRS ), INL - Nanophotonique ( INL - Photonique ), Institut des Nanotechnologies de Lyon ( INL ), École Centrale de Lyon ( ECL ), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon ( CPE ) -Institut National des Sciences Appliquées de Lyon ( INSA Lyon ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ) -École Centrale de Lyon ( ECL ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ), Université de Lyon, LPN-CNRS, Route de Nozay, 91460 Marcoussis, France, Laboratoire d'Electronique et des Technologies de l'Information ( CEA-LETI ), Université Grenoble Alpes [Saint Martin d'Hères]-Commissariat à l'énergie atomique et aux énergies alternatives ( CEA ), Department of Geology and Applied Geology, University of Mons [Belgium] ( UMONS ), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique ( CNRS ) -Institut National des Sciences Appliquées de Lyon ( INSA Lyon ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -École supérieure de Chimie Physique Electronique de Lyon ( CPE ) -Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-École Centrale de Lyon ( ECL ), Laboratoire Traitement du Signal et de l'Image ( LTSI ), Université de Rennes 1 ( UR1 ), Université de Rennes ( UNIV-RENNES ) -Université de Rennes ( UNIV-RENNES ) -Institut National de la Santé et de la Recherche Médicale ( INSERM ), Commissariat à l'énergie atomique et aux énergies alternatives ( CEA ) -Université Grenoble Alpes [Saint Martin d'Hères], Institut Lavoisier de Versailles (ILV), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Faculté polytechnique de Mons, Université de Mons (UMons), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), Laboratoire Interdisciplinaire Carnot de Bourgogne (LICB), Université de Bourgogne (UB)-Centre National de la Recherche Scientifique (CNRS), INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)
Subjects: Fabrication, Materials science, crystalline silicon, Bioengineering, 02 engineering and technology, Epitaxy, 7. Clean energy, 01 natural sciences, Nanoimprint lithography, law.invention, Monocrystalline silicon, law, Plasma-enhanced chemical vapor deposition, 0103 physical sciences, [ SPI ] Engineering Sciences [physics], nanoimprint lithography, General Materials Science, Crystalline silicon, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, Mechanical Engineering, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, low-temperature epitaxy, Anodic bonding, solar cells, Optoelectronics, light trapping, Quantum efficiency, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [ SPI.OPTI ] Engineering Sciences [physics]/Optics / Photonic, 0210 nano-technology, business, [ PHYS.COND ] Physics [physics]/Condensed Matter [cond-mat]
Abstract: International audience; Ultrathin c-Si solar cells have the potential to drastically reduce costs by saving raw material while maintaining good efficiencies thanks to the excellent quality of monocrystalline silicon. However, efficient light trapping strategies must be implemented to achieve high short-circuit currents. We report on the fabrication of both planar and patterned ultrathin c-Si solar cells on glass using low temperature (T < 275 °C), low-cost, and scalable techniques. Epitaxial c-Si layers are grown by PECVD at 160 °C and transferred on a glass substrate by anodic bonding and mechanical cleavage. A silver back mirror is combined with a front texturation based on an inverted nanopyramid array fabricated by nanoimprint lithography and wet etching. We demonstrate a short-circuit current density of 25.3 mA/cm2 for an equivalent thickness of only 2.75 μm. External quantum efficiency (EQE) measurements are in very good agreement with FDTD simulations. We infer an optical path enhancement of 10 in the long wavelength range. A simple propagation model reveals that the low photon escape probability of 25% is the key factor in the light trapping mechanism. The main limitations of our current technology and the potential efficiencies achievable with contact optimization are discussed.
Published: 2016

4. Nanophotonics-based low-temperature PECVD epitaxial crystalline silicon solar cells

Author: Alexandre Dmitriev, Pere Roca i Cabarrocas, Abdelmounaim Harouri, Alain Fave, Inès Massiot, Valerie Depauw, Christos Trompoukis, Fabien Mandorlo, Emmanuel Drouard, Romain Cariou, Ki-Dong Lee, Christian Seassal, Wanghua Chen, Jia Liu, Loïc Lalouat, Regis Orobtchouk, Martin Foldyna, Laboratoire de physique des interfaces et des couches minces [Palaiseau] ( LPICM ), École polytechnique ( X ) -Centre National de la Recherche Scientifique ( CNRS ), Alcatel-Thalès III-V lab ( III-V Lab ), THALES-ALCATEL, IMEC ( IMEC ), Catholic University of Leuven ( KU Leuven ), Departement Elektrotechniek - ESAT [leuven], Katholieke Universiteit Leuven ( KU Leuven ), INL - Nanophotonique ( INL - Photonique ), Institut des Nanotechnologies de Lyon ( INL ), École Centrale de Lyon ( ECL ), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon ( CPE ) -Institut National des Sciences Appliquées de Lyon ( INSA Lyon ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ) -École Centrale de Lyon ( ECL ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ), Université de Lyon, Laboratoire Interdisciplinaire Carnot de Bourgogne ( LICB ), Université de Bourgogne ( UB ) -Centre National de la Recherche Scientifique ( CNRS ), College of Urban and Environmental Sciences, Peking University [Beijing], INL - Photovoltaïque ( INL - PV ), Laboratoire de photonique et de nanostructures ( LPN ), Centre National de la Recherche Scientifique ( CNRS ), Department of Applied Physics [Gothenburg], Chalmers University of Technology [Göteborg], Obducat Technologies [Lund], Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), IMEC (IMEC), Catholic University of Leuven - Katholieke Universiteit Leuven (KU Leuven), INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Laboratoire Interdisciplinaire Carnot de Bourgogne (LICB), Université de Bourgogne (UB)-Centre National de la Recherche Scientifique (CNRS), INL - Photovoltaïque (INL - PV), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Acoustics and Ultrasonics, Nanotechnology, 02 engineering and technology, Quantum dot solar cell, 7. Clean energy, 01 natural sciences, Polymer solar cell, law.invention, Monocrystalline silicon, Etching (microfabrication), law, 0103 physical sciences, Solar cell, Crystalline silicon, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Reactive-ion etching, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, fungi, technology, industry, and agriculture, food and beverages, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, 13. Climate action, Dry etching, 0210 nano-technology, [ PHYS.COND ] Physics [physics]/Condensed Matter [cond-mat]
Abstract: The enhancement of light absorption via nanopatterning in crystalline silicon solar cells is becoming extremely important with the decrease of wafer thickness for the further reduction of solar cell fabrication cost. In order to study the influence of nanopatterning on crystalline silicon thin-film solar cells, we applied two lithography techniques (laser interference lithography and nanoimprint lithography) combined with two etching techniques (dry and wet) to epitaxial crystalline silicon thin films deposited via plasma-enhanced chemical vapor deposition at 175 degrees C. The influence of nanopatterning with different etching profiles on solar cell performance is studied. We found that the etching profiles (pitch, depth and diameter) have a stronger impact on the passivation quality (open circuit voltage and fill factor) than on the optical performance (short circuit current density) of the solar cells. We also show that nanopatterns obtained via wet-etching can improve solar cell performance; and in contrast, dry-etching leads to poor passivation related to the etching profile, surface damage, and/ or contamination introduced during the etching process.
Published: 2016

5. Integrated lasers on silicon for optical communications

Author: Manel Ramirez, Joan, Souleiman, Amin, Fanneau, Pierre, Besancon, Claire, Vaissiere, Nicolas, Neel, Delphine, Ramez, Valentin, Malhouitre, Stéphane, Hassan, Karim, Merghem, Kamel, Decobert, Jean, Bitauld, David, Nokia Bell Labs [Paris-Saclay], Institut Polytechnique de Paris (IP Paris), Département Electronique et Physique (TSP - EPH), Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP), Traitement de l'Information Pour Images et Communications (TIPIC-SAMOVAR), Services répartis, Architectures, MOdélisation, Validation, Administration des Réseaux (SAMOVAR), Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP)-Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Alcatel-Thales III-V Lab (III-V Lab ), and THALES [France]
Subjects: [PHYS]Physics [physics], Silicon, Optical communications, Lasers
Abstract: We review our work on integrated lasers for optical communications. An InP-based multilayer stack containing Al-based quantum wells with optical gain in the telecom window is bonded onto a silicon-on-insulator wafer with patterned photonic circuits and cavities. Ring-based widely tunable lasers and narrow linewidth DFB lasers are demonstrated.
Published: 2023

6. Ultrathin nanostructured c-Si solar cells by low temperature and scalable processes

Author: Romain Cariou, Anne Gaucher, Loïc Lalouat, Inès Massiot, Andrea Cattoni, Stéphane Collin, Martin Foldyna, Emmanuel Drouard, Christian Seassal, Wanghua Chen, P. Roca i Cabarrocas, Christophe Dupuis, Laboratoire d'Electronique et des Technologies de l'Information ( CEA-LETI ), Commissariat à l'énergie atomique et aux énergies alternatives ( CEA ) -Université Grenoble Alpes [Saint Martin d'Hères], Laboratoire de photonique et de nanostructures ( LPN ), Centre National de la Recherche Scientifique ( CNRS ), Laboratoire de Photonique et de Nanostructures (LPN-CNRS), Université de Lille, Sciences Humaines et Sociales, Laboratoire de physique des interfaces et des couches minces [Palaiseau] ( LPICM ), École polytechnique ( X ) -Centre National de la Recherche Scientifique ( CNRS ), Alcatel-Thalès III-V lab ( III-V Lab ), THALES-ALCATEL, Laboratoire Interdisciplinaire Carnot de Bourgogne ( LICB ), Université de Bourgogne ( UB ) -Centre National de la Recherche Scientifique ( CNRS ), Institut des Nanotechnologies de Lyon ( INL ), École Centrale de Lyon ( ECL ), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon ( CPE ) -Institut National des Sciences Appliquées de Lyon ( INSA Lyon ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ), INL - Nanophotonique ( INL - Photonique ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ) -École Centrale de Lyon ( ECL ), Université de Lyon, Laboratoire Traitement du Signal et de l'Image ( LTSI ), Université de Rennes 1 ( UR1 ), Université de Rennes ( UNIV-RENNES ) -Université de Rennes ( UNIV-RENNES ) -Institut National de la Santé et de la Recherche Médicale ( INSERM ), Inl, Laboratoire INL UMR5270, Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)
Subjects: Materials science, [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI] Engineering Sciences [physics], [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [ SPI.MAT ] Engineering Sciences [physics]/Materials, Quantum dot solar cell, [SPI.MAT] Engineering Sciences [physics]/Materials, 7. Clean energy, Polymer solar cell, [SPI.MAT]Engineering Sciences [physics]/Materials, Nanoimprint lithography, law.invention, Monocrystalline silicon, [SPI]Engineering Sciences [physics], law, Plasma-enhanced chemical vapor deposition, [ SPI ] Engineering Sciences [physics], Plasmonic solar cell, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business.industry, Hybrid solar cell, Anodic bonding, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [ SPI.OPTI ] Engineering Sciences [physics]/Optics / Photonic, business
Abstract: JUN 14-19, 2015; International audience; We report on the fabrication and characterization of both flat and patterned c-Si solar cells on glass. We use epitaxial layers grown by plasma enhanced chemical vapor deposition at low temperature (T
Published: 2015

7. Mini and micro-resonators for the generation of high spectral purity microwave signals

Author: L. Morvan, A. Bouchier, Y. Chembo, D. Dolfi, Y. Dumeige, P. Féron, M. Ferrari, L. Larger, E. Le Cren, O. Llopis, J. Maxin, P. Merrer, G. Nunzi Conti, G. Pillet, K. Saleh, P. Salzenstein, F. Van Dijk, G. Cibiel, Thales Research and Technology [Palaiseau], THALES, Service Techniques et Équipements Appliqués à la Microélectronique ( LAAS-TEAM ), Laboratoire d'analyse et d'architecture des systèmes [Toulouse] ( LAAS ), Institut National Polytechnique [Toulouse] ( INP ) -Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ) -Institut National Polytechnique [Toulouse] ( INP ) -Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ), Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies ( FEMTO-ST ), Université de Technologie de Belfort-Montbeliard ( UTBM ) -Ecole Nationale Supérieure de Mécanique et des Microtechniques ( ENSMM ) -Centre National de la Recherche Scientifique ( CNRS ) -Université de Franche-Comté ( UFC ), Fonctions Optiques pour les Technologies de l'informatiON ( FOTON ), Université de Rennes 1 ( UR1 ), Université de Rennes ( UNIV-RENNES ) -Université de Rennes ( UNIV-RENNES ) -Université européenne de Bretagne ( UEB ) -Institut National des Sciences Appliquées - Rennes ( INSA Rennes ) -École Nationale Supérieure des Sciences Appliquées et de Technologie ( ENSSAT ) -Télécom Bretagne-Centre National de la Recherche Scientifique ( CNRS ), Caratterizzazione e Sviluppo di Materiali per la Fotonica e l'Optoelecttronica ( CSMFO ), CNR Istituto di Fotonica e Nanotecnologie [Trento] ( IFN ), Consiglio Nazionale delle Ricerche [Roma] ( CNR ) -Consiglio Nazionale delle Ricerche [Roma] ( CNR ), Équipe Microondes et Opto-microondes pour Systèmes de Télécommunications ( LAAS-MOST ), MDF-Lab ( MDF-Lab, CNR-IFAC ), Consiglio Nazionale delle Ricerche [Roma] ( CNR ) -Istituto di Fisica Applicata 'Nello Carrara' (IFAC), Alcatel-Thalès III-V lab ( III-V Lab ), THALES-ALCATEL, Centre National d'Etudes Spatiales ( CNES ), Centre National d'Etudes Spatiales Action R&T SHYRO R-S10/LN-0001-004, Maurizio Ferrari, Marian Marciniak, Giancarlo C. Righini, Tomasz Szoplik, Stefano Varas, SHYRO, THALES [France], Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes (UR)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), Caratterizzazione e Sviluppo di Materiali per la Fotonica e l'Optoelecttronica (CSMFO), CNR Istituto di Fotonica e Nanotecnologie [Trento] (IFN), National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR)-National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR), Équipe Microondes et Opto-microondes pour Systèmes de Télécommunications (LAAS-MOST), Istituto di Fisica Applicata 'Nello Carrara' (IFAC), National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Centre National d'Études Spatiales [Toulouse] (CNES), Maurizio Ferrari, Marian Marciniak, Giancarlo C. Righini, Tomasz Szoplik, Stefano Varas, Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-Télécom Bretagne, Consiglio Nazionale delle Ricerche [Roma] (CNR)-Consiglio Nazionale delle Ricerche [Roma] (CNR), and Consiglio Nazionale delle Ricerche [Roma] (CNR)
Subjects: [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [ PHYS.PHYS.PHYS-OPTICS ] Physics [physics]/Physics [physics]/Optics [physics.optics]
Abstract: accessible sur http://minap2012.fbk.eu; International audience; Optoelectronic Oscillators (OEOs) are an attractive alternative to electrical solutions for the generation of high spectral purity signal at high frequency. Indeed, carrying the microwave signal on an optical carrier offers the opportunity of long staorage time, with almost no dependence on signal frequency. For example, classical OEOs are based on kilometre long fiber delays and, in a relative simple setup, their performances exceed the ones of most microwave oscillators. However, the most promising OEOs architectures, in term of performances and integration level, are based on high Q optical resonators. After an introduction on the principle of OEOs and their various potential applications in advanced microwave systems, we will present recent results that we have obtained in this field.. First, the realization and characterization of silica, CaF2, MgF2 and LiNbO3 Whispering Gallery Modes (WGM) resonators with Q factors in the 10^8-10^9 range will be presented, together with related light coupling techniques for their practical use in OEOs demonstrations. Then the realization and characterization of fiber-ring resonators, that present Q factors exceeding 10^9 in a relatively simple architecture will be highlighted. Finally, dual-frequency laser sources that have been specifically realized for OEOs will be described.
Published: 2012

8. Satellite survey of seasonal trophic status and occasional anoxic 'malaigue' crises in the Thau lagoon using MERIS images

Author: Lionel Loubersac, Sandrine Mathieu, Thierry Laugier, Audrey Minghelli-Roman, Pierre Gouton, Laurent Polidori, Laboratoire Electronique, Informatique et Image [UMR6306] (Le2i), Université de Bourgogne (UB)-Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Arts et Métiers (ENSAM), Arts et Métiers Sciences et Technologies, HESAM Université (HESAM)-HESAM Université (HESAM)-Arts et Métiers Sciences et Technologies, HESAM Université (HESAM)-HESAM Université (HESAM)-AgroSup Dijon - Institut National Supérieur des Sciences Agronomiques, de l'Alimentation et de l'Environnement, Signal et Image (SIIM), Laboratoire d'Informatique et Systèmes (LIS), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Environnement Ressources (LER-LR), Institut Français de Recherche pour l'Exploitation de la Mer (IFREMER), Laboratoire Géomatique et foncier (GeF), Conservatoire National des Arts et Métiers [CNAM] (CNAM), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Laboratoire Laboratoire Environnement Ressources Morbihan Pays de Loire (LER/MPL), Laboratoire Electronique, Informatique et Image ( Le2i ), Université de Bourgogne ( UB ) -AgroSup Dijon - Institut National Supérieur des Sciences Agronomiques, de l'Alimentation et de l'Environnement-Centre National de la Recherche Scientifique ( CNRS ), Laboratoire Environnement Ressources ( LER-LR ), Institut Français de Recherche pour l'Exploitation de la Mer ( IFREMER ), École Supérieure des Géomètres et Topographes ( ESGT CNAM ), Conservatoire National des Arts et Métiers [CNAM] ( CNAM ), Alcatel-Thalès III-V lab ( III-V Lab ), Laboratoire Laboratoire Environnement Ressources Morbihan Pays de Loire ( LER/MPL ), Gouton, Pierre, Université de Bourgogne (UB)-École Nationale Supérieure d'Arts et Métiers (ENSAM), HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-Arts et Métiers Sciences et Technologies, HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-AgroSup Dijon - Institut National Supérieur des Sciences Agronomiques, de l'Alimentation et de l'Environnement-Centre National de la Recherche Scientifique (CNRS), Laboratoire Environnement Ressources Languedoc Roussillon (LERLR), LITTORAL (LITTORAL), Institut Français de Recherche pour l'Exploitation de la Mer (IFREMER)-Institut Français de Recherche pour l'Exploitation de la Mer (IFREMER), HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM), THALES [France]-ALCATEL, and Laboratoire Environnement Ressources Morbihan Pays de Loire (LERMPL)
Subjects: 0106 biological sciences, [ INFO.INFO-TS ] Computer Science [cs]/Signal and Image Processing, 010504 meteorology & atmospheric sciences, Ecology, [INFO.INFO-TS] Computer Science [cs]/Signal and Image Processing, 010604 marine biology & hydrobiology, [ SPI.SIGNAL ] Engineering Sciences [physics]/Signal and Image processing, 01 natural sciences, Anoxic waters, 6. Clean water, Medium resolution, Oceanography, [INFO.INFO-TS]Computer Science [cs]/Signal and Image Processing, 13. Climate action, General Earth and Planetary Sciences, Environmental science, Satellite, 14. Life underwater, Eutrophication, [SPI.SIGNAL]Engineering Sciences [physics]/Signal and Image processing, 0105 earth and related environmental sciences, Trophic level, [SPI.SIGNAL] Engineering Sciences [physics]/Signal and Image processing
Abstract: International audience; The Thau lagoon, located in southern France, suffers episodically from anoxic crises locally known as 'malaigue'. Such crises mostly occur under warm conditions, low winds leading to a strong eutrophication of the lagoon. The development of a sulphur bacterium sometimes gives locally to the waters a 'milky turquoise' appearance and leads to shellfish mortality. One of the indicators of the eutrophication status of the lagoon can be surveyed by the chlorophyll product provided by remote sensing images such as Medium Resolution Imaging Spectrometer (MERIS). In this paper we compare chl2 (or algal2) estimations provided by MERIS level 2 products and the ground measurements of chlorophyll a concentrations in water and we propose a linear correction of the chl2 MERIS product. The corrected chl2 estimations obtained over four years are analysed to understand the seasonal evolution of the trophic status of the Thau lagoon. We also study the influence of the anoxic crises of summers 2003 and 2006 on the chl2 estimations and we find a strong correlation between chl2 and the oxygen percentage at 1 m depth (0.70 for measurements in summers 2003 and 2006).
Published: 2011

9. Concept de laser à cavitté CONTINUUM et ses applications

Author: Jacquet, Joel, Duan, Guang-Hua, Garnache, Arnaud, Millot, Guy, Laboratoire Matériaux Optiques, Photonique et Systèmes ( LMOPS ), CentraleSupélec-Université de Lorraine ( UL ), Alcatel-Thalès III-V lab ( III-V Lab ), THALES-ALCATEL, Institut d’Electronique et des Systèmes ( IES ), Université de Montpellier ( UM ) -Centre National de la Recherche Scientifique ( CNRS ), Laboratoire Interdisciplinaire Carnot de Bourgogne ( LICB ), Université de Bourgogne ( UB ) -Centre National de la Recherche Scientifique ( CNRS ), Van Luchene, Sébastien, Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Alcatel-Thalès III-V lab (III-V Lab), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Interdisciplinaire Carnot de Bourgogne (LICB), and Université de Bourgogne (UB)-Centre National de la Recherche Scientifique (CNRS)
Subjects: [PHYS]Physics [physics], [ PHYS ] Physics [physics], [PHYS] Physics [physics]
Published: 2010

10. Cascadability and wavelength tunability assessment of a 2R regeneration device based on a 8 channel saturable absorber module

Author: Bramerie , Laurent, Le , Quang Trung, Lobo , Sebastien, Gay , Mathilde, Joindot , Michel, Simon , Jean-Claude, Poudoulec , Alain, Van Der Keur , Michiel, Devemy , Christophe, Massoubre , David, Oudar , Jean-Louis, Aubin , Guy, DION , Jean, Shen , Alexandre, Decobert , Jean, Fonctions Optiques pour les Technologies de l'informatiON ( FOTON ), Télécom Bretagne-École Nationale Supérieure des Sciences Appliquées et de Technologie ( ENSSAT ) -Université de Rennes 1 ( UR1 ), Université de Rennes ( UNIV-RENNES ) -Université de Rennes ( UNIV-RENNES ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ), Orange Labs [Lannion], France Télécom, YENISTA Optics, YENISTA, Laboratoire de photonique et de nanostructures ( LPN ), Centre National de la Recherche Scientifique ( CNRS ), Lab-STICC_TB_CACS_IAS, Alcatel-Thalès III-V lab ( III-V Lab ), THALES-ALCATEL-THALES-ALCATEL, THALES-ALCATEL, OSA, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne, Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), and THALES [France]-ALCATEL
Subjects: [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [ PHYS.PHYS.PHYS-OPTICS ] Physics [physics]/Physics [physics]/Optics [physics.optics]
Abstract: session " Postdeadline Session A " [PDP1]; International audience; We report the first pigtailed chip saturable absorber which has been implemented with 8 independent fibers using a cost effective coupling technique. The cascadability and wavelength tunability assessment have been experimentally demonstrated at 42.6 Gbit/s.
Published: 2007

11. In‐depth analysis of InAlN/GaN HEMT heterostructure after annealing using angle‐resolved X‐ray photoelectron spectroscopy

Author: Yoan Bourlier, Arnaud Etcheberry, Piero Gamarra, Stéphane Piotrowicz, Sylvain Delage, O. Patard, Muriel Bouttemy, Mathieu Frégnaux, Institut Lavoisier de Versailles (ILV), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Laboratoire d'informatique de l'École polytechnique [Palaiseau] (LIX), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thales III-V Lab (III-V Lab), THALES, Fonds Unique Interministériel, FUI: FUI–AAP 19, and This work was carried out in the framework of the VEGaN 2 Project supported by the Fond Unique Interministériel (FUI–AAP 19).
Subjects: 010302 applied physics, Materials science, business.industry, Annealing (metallurgy), Heterojunction, [CHIM.MATE]Chemical Sciences/Material chemistry, 02 engineering and technology, Surfaces and Interfaces, General Chemistry, High-electron-mobility transistor, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Surfaces, Coatings and Films, X-ray photoelectron spectroscopy, 0103 physical sciences, Materials Chemistry, Optoelectronics, 0210 nano-technology, business
Abstract: International audience; During high-electron-mobility transistor elaboration process, a thermal treatment of In0.2Al0.8N (InAlN) barrier layer is performed in order to improve electrical performances. We showed previously that In0.2Al0.8N/GaN heterostructures, annealed at 850°C under O2 partial pressure, present a specific in-depth organization. Angle-resolved X-ray photoelectron spectroscopy is a powerful tool to precisely determine the spatial localization and relative position of the different interfaces, from InAlN until buried GaN layer. The proposed in-depth model of the stack evidences (1) an Al-rich surface oxide with embedded N2 molecules, (2) an interlayer of InAlN
Published: 2020

12. Recent Advances in 100+nm Ultra-Wideband Fiber-Optic Transmission Systems Using Semiconductor Optical Amplifiers

Author: Fabrice Blache, Nick Fontaine, David T. Neilson, Aurelien Boutin, Dylan Le Gac, Laurent Letteron, Mathilde Makhsiyan, Karim Mekhazni, Jeremie Renaudier, Amirhossein Ghazisaeidi, Yann Frignac, Aymeric Arnould, Elie Awwad, Patrick Brindel, Mohand Achouche, Nokia Bell Labs [Nozay], Alcatel-Thales III-V Lab (III-V Lab), THALES, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, KYLIA (.), Egide, EGIDE, Département Electronique et Physique (EPH), Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP), Institut Polytechnique de Paris (IP Paris), Traitement de l'Information Pour Images et Communications (TIPIC-SAMOVAR), Services répartis, Architectures, MOdélisation, Validation, Administration des Réseaux (SAMOVAR), Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP)-Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP), Bell laboratories [Holmdel, NJ], and Alcatel-Lucent
Subjects: Physics, Optical amplifier, business.industry, Amplifier, Bandwidth (signal processing), Single-mode optical fiber, Ultra-wideband, Optical polarization, Coherent communications, Atomic and Molecular Physics, and Optics, Fiber-optic communication, [INFO.INFO-NI]Computer Science [cs]/Networking and Internet Architecture [cs.NI], [SPI]Engineering Sciences [physics], Fiber optic communication, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Semiconductor optical amplifier, Ultra wideband communication, business, Free-space optical communication
Abstract: International audience; We report on the use of semiconductor optical amplifiers (SOAs) to extend the optical bandwidth of next generation optical systems to 100 nm and beyond. After discussing the technological progress and the motivation for rekindling the interest in SOAs for line amplification, we describe the innovative approach developed for the realization of ultra-wideband (UWB) SOAs. Leveraging custom design of singly polarized SOAs to provide gain over 100+ nm bandwidth, we developed a polarization diversity architecture to realize UWB-SOA modules. Embedded in a compact package, the UWB amplifier modules have been successfully used to demonstrate 100+ Tb/s transmissions. We subsequently review recent experimental transmission results based on such novel 100+ nm wide semiconductor optical amplifiers, including our first demonstration of 100+Tb/s transmission over 100 km distance, our field trial using real-time traffic, and finally the transmission of 107 Tb/s throughput over three spans of standard single mode fiber (SSMF) using hybrid UWB Raman/SOA amplification technique.
Published: 2020

13. Double-Heterojunction Bipolar Transistor as THz Detector for Communications

Author: I. Diouf, Virginie Nodjiadjim, Nina Diakonova, Muriel Riet, Annick Penarier, Frédéric Aniel, Luca Varani, Stéphane Blin, Nicolas Zerounian, Philippe Nouvel, Dominique Coquillat, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Modélisation et Spectroscopie THz (MOST), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Charles Coulomb (L2C), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), IEEE, and ANR-13-NANO-0008,NADIA,NAno Détecteurs Intégrés pour Applications terahertz(2013)
Subjects: Heterodyne, Materials science, business.industry, Heterojunction bipolar transistor, Transistor, Bipolar junction transistor, Detector, [PHYS.PHYS.PHYS-GEN-PH]Physics [physics]/Physics [physics]/General Physics [physics.gen-ph], law.invention, Hardware_GENERAL, law, Optoelectronics, Output impedance, Antenna (radio), business, Sensitivity (electronics)
Abstract: International audience; We investigate the use of an InP-based double-heterojunction bipolar transistor as a detector for wireless communications around 300~GHz. The sensitivity of the detector, along with its complex output impedance are characterized for a transistor (un)coupled to a log-spiral antenna, at different biases. A real-time uncompressed high-definition video signal is successfully transmitted at 1.5 Gbps in a heterodyne configuration.
Published: 2021

14. AlN Etching under ICP Cl2/BCl3/Ar Plasma Mixture: Experimental Characterization and Plasma Kinetic Model

Author: Alexandre Shen, Abdou Djouadi, Delphine Néel, Dalila Make, M. Rammal, Ahmed Rhallabi, Equipe Radiocom, Lebanese University [Beirut] (LU)-IUT-Saida, Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, and Université de Nantes (UN)
Subjects: Electron density, Materials science, Mechanical Engineering, Analytical chemistry, BCL3, 02 engineering and technology, Plasma, 010402 general chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 7. Clean energy, 01 natural sciences, 0104 chemical sciences, Ion, Electronegativity, Mechanics of Materials, Etching (microfabrication), [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], General Materials Science, Thin film, Reactive-ion etching, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS
Abstract: AlN etching with chloride plasmas is studied. The experimental results show that the etching of AlN under a low pressure Cl2/Ar plasma mixture in moderate DC bias is not possible. The addition of BCl3 gas to Cl2/Ar mixture allows the etching of AlN materials. However the obtained properties of etched AlN is still not in conformity with the technological specification especially for the condition which the etched AlN must be kept only along the sidewall of the InP laser cavity and be removed elsewhere (selective etching). To know more about the effect of the BCl3 addition to the Cl2/Ar plasma mixture, global model of BCl3/Cl2/Ar is developed to quantify the neutral and ion densities as well as the electron density and temperature. The simulation results show that the electron density and low pressure linearly varies with the RF power. The negative ion density decreases with the percentage of BCl3 leading to the diminution of the electronegativity which is represented by negative ion to electron density ratio. The simulation shows that the positive ion to atomic chlorine flux ratio increases with the %BCl3. Such parameters could play an important role in the ion neutral synergy during the etching process.
Published: 2019

15. Towards monolithic indium phosphide (InP)-based electronic photonic technologies for beyond 5G communication systems

Author: Marina Deng, Muriel Riet, Patrick Mounaix, Cristell Maneux, Chhandak Mukherjee, Virginie Nodjiadjim, Hervé Bertin, Xin Wen, Magali De Matos, Mathieu Luisier, Christophe Caillaud, Djeber Guendouz, Nicolas Vaissiere, Colin Mismer, Centre National de la Recherche Scientifique (CNRS), Laboratoire de l'intégration, du matériau au système (IMS), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1, University of Bordeaux, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Nokia Bell Labs, Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology [Zürich] (ETH Zürich), and University of Bordeaux, IMS, CNRS 5218
Subjects: Computer science, Heterojunction bipolar transistor, 02 engineering and technology, Integrated circuit, lcsh:Technology, 01 natural sciences, Die (integrated circuit), law.invention, lcsh:Chemistry, terahertz, law, compact model, 0202 electrical engineering, electronic engineering, information engineering, electrical characterization, heterojunction bipolar transistor, uni-traveling carrier photodiodes, high frequency, indium-phosphide, sub-millimeter wave, TCAD and Monte Carlo simulations, General Materials Science, lcsh:QH301-705.5, Instrumentation, 010302 applied physics, Fluid Flow and Transfer Processes, General Engineering, lcsh:QC1-999, Computer Science Applications, Software design, Design flow, Indium phosphide, High frequency HF, 0103 physical sciences, Electronic engineering, Electronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Terahertz communication, lcsh:T, business.industry, Electrical characterisation, Process Chemistry and Technology, 020206 networking & telecommunications, Circuit reliability, [INFO.INFO-MO]Computer Science [cs]/Modeling and Simulation, [SPI.TRON]Engineering Sciences [physics]/Electronics, lcsh:Biology (General), lcsh:QD1-999, lcsh:TA1-2040, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Photonics, lcsh:Engineering (General). Civil engineering (General), business, lcsh:Physics, Heterojunction bipolar transistors
Abstract: This review paper reports the prerequisites of a monolithic integrated terahertz (THz) technology capable of meeting the network capacity requirements of beyond-5G wireless communications system (WCS). Keeping in mind that the terahertz signal generation for the beyond-5G networks relies on the technology power loss management, we propose a single computationally efficient software design tool featuring cutting-edge optical devices and high speed III–V electronics for the design of optoelectronic integrated circuits (OEICs) monolithically integrated on a single Indium-Phosphide (InP) die. Through the implementation of accurate and SPICE (Simulation Program with Integrated Circuit Emphasis)-compatible compact models of uni-traveling carrier photodiodes (UTC-PDs) and InP double heterojunction bipolar transistors (DHBTs), we demonstrated that the next generation of THz technologies for beyond-5G networks requires (i) a multi-physical understanding of their operation described through electrical, photonic and thermal equations, (ii) dedicated test structures for characterization in the frequency range higher than 110 GHz, (iii) a dedicated parameter extraction procedure, along with (iv) a circuit reliability assessment methodology. Developed on the research and development activities achieved in the past two decades, we detailed each part of the multiphysics design optimization approach while ensuring technology power loss management through a holistic procedure compatible with existing software tools and design flow for the timely and cost-effective achievement of THz OEICs., Applied Sciences, 11 (5), ISSN:2076-3417
Published: 2021
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16. Hybrid semiconductor lasers for advanced coherent formats in datacenter interconnects

Author: Verolet, Théo, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Université Paris-Saclay, and Abderrahim Ramdane
Subjects: Frequency comb, Peigne de fréquence, Circuit photonique, Phase noise, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Coherent transmission, Bruit de phase, Laser diode, Diode laser, Transmission cohérente, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Photonic integrated circuit
Abstract: As data traffic is exponentially increasing in datacenters, new generation of mass producible optical transceivers delivering high data throughput at very low energy consumption are required. Optical coherent technology has been widely used in the past decade to support intercontinental data traffic, as it benefits from higher performance over direct modulation systems though at the cost of complexity and price. To be efficiently used in datacenters, the size and energy consumption of coherent transceivers need to be scaled down while keeping relatively high data throughput. This could be achieved using higher order coherent formats, improving the transmission link spectral efficiency. However, these advanced communication formats can only be supported by low noise lasers. This thesis hence focuses on the phase noise optimization of three types of compact laser diodes using passive/active integration suitable for datacenter interconnects. First, a novel design of III-V/Si narrow linewidth high quality factor DFB laser based on a chirped grating is thoroughly studied. Detailed numerical simulations that yield grating parameters leading to optimal performances are presented for the first time to our knowledge. In a second study, we investigate the fast switching properties of a newly designed narrow linewidth extended cavity III-V/Si laser. After detailing the laser operating principles, we propose an experimental method to precisely characterize laser switching dynamics. Record coherent slot switching experiments are then demonstrated using this new laser. In the final part, we first investigate optical feedback regimes in single section quantum dash MLL and show that coherent feedback can induce a drastic phase noise reduction of the MLL longitudinal modes. The potential use of this comb source in a DWDM coherent link is demonstrated through highly spectrally efficient transmission experiments.; Alors que le trafic de donnée intra-datacenter augmente exponentiellement, de nouvelles générations de transpondeurs optiques sont étudiées. Ces transpondeurs doivent délivrer un fort débit, tout en restant faible consommation. Les technologies cohérentes –sur lesquelles sont établies les liens intercontinentaux- doivent voir leur taille et bilan énergétique réduits. L’utilisation de formats cohérents avancés améliorera les performances des systèmes cohérents tout en les gardant compacts et efficaces énergétiquement. Cependant ces formats peuvent être déployés seulement si des lasers faibles bruits sont utilisés. C’est dans ce cadre que cette thèse étudie la réduction du bruit de phase de trois types de diodes lasers. Premièrement, nous étudions un nouveau type de laser à rétroaction distribué ayant une faible largeur de raie. Des simulations montrant les paramètres de conceptions optimaux de ce type de laser III-V/Si sont présentées. Dans le chapitre suivant, nous analysons les propriétés de reconfiguration rapide de lasers accordables faible bruit. Ici, nous proposons d’abord une nouvelle méthode de mesures permettant d’analyser précisément un saut de mode, ensuite nous présentons des résultats record de transmission cohérentes de paquets optiques. Dans un dernier chapitre, nous montrons que la rétroaction optique permet de stabiliser un laser à verrouillage de mode. Après avoir analysé les différents régimes de fonctionnement, nous confirmons les hautes performances de lien de communication cohérente utilisant ces lasers peigne de fréquence.
Published: 2020

17. Diodes lasers hybrides pour les communications cohérentes avancées dans les datacenters

Author: Verolet, Théo, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Université Paris-Saclay, and Abderrahim Ramdane
Subjects: Frequency comb, Peigne de fréquence, Circuit photonique, Phase noise, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Coherent transmission, Bruit de phase, Laser diode, Diode laser, Transmission cohérente, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Photonic integrated circuit
Abstract: As data traffic is exponentially increasing in datacenters, new generation of mass producible optical transceivers delivering high data throughput at very low energy consumption are required. Optical coherent technology has been widely used in the past decade to support intercontinental data traffic, as it benefits from higher performance over direct modulation systems though at the cost of complexity and price. To be efficiently used in datacenters, the size and energy consumption of coherent transceivers need to be scaled down while keeping relatively high data throughput. This could be achieved using higher order coherent formats, improving the transmission link spectral efficiency. However, these advanced communication formats can only be supported by low noise lasers. This thesis hence focuses on the phase noise optimization of three types of compact laser diodes using passive/active integration suitable for datacenter interconnects. First, a novel design of III-V/Si narrow linewidth high quality factor DFB laser based on a chirped grating is thoroughly studied. Detailed numerical simulations that yield grating parameters leading to optimal performances are presented for the first time to our knowledge. In a second study, we investigate the fast switching properties of a newly designed narrow linewidth extended cavity III-V/Si laser. After detailing the laser operating principles, we propose an experimental method to precisely characterize laser switching dynamics. Record coherent slot switching experiments are then demonstrated using this new laser. In the final part, we first investigate optical feedback regimes in single section quantum dash MLL and show that coherent feedback can induce a drastic phase noise reduction of the MLL longitudinal modes. The potential use of this comb source in a DWDM coherent link is demonstrated through highly spectrally efficient transmission experiments.; Alors que le trafic de donnée intra-datacenter augmente exponentiellement, de nouvelles générations de transpondeurs optiques sont étudiées. Ces transpondeurs doivent délivrer un fort débit, tout en restant faible consommation. Les technologies cohérentes –sur lesquelles sont établies les liens intercontinentaux- doivent voir leur taille et bilan énergétique réduits. L’utilisation de formats cohérents avancés améliorera les performances des systèmes cohérents tout en les gardant compacts et efficaces énergétiquement. Cependant ces formats peuvent être déployés seulement si des lasers faibles bruits sont utilisés. C’est dans ce cadre que cette thèse étudie la réduction du bruit de phase de trois types de diodes lasers. Premièrement, nous étudions un nouveau type de laser à rétroaction distribué ayant une faible largeur de raie. Des simulations montrant les paramètres de conceptions optimaux de ce type de laser III-V/Si sont présentées. Dans le chapitre suivant, nous analysons les propriétés de reconfiguration rapide de lasers accordables faible bruit. Ici, nous proposons d’abord une nouvelle méthode de mesures permettant d’analyser précisément un saut de mode, ensuite nous présentons des résultats record de transmission cohérentes de paquets optiques. Dans un dernier chapitre, nous montrons que la rétroaction optique permet de stabiliser un laser à verrouillage de mode. Après avoir analysé les différents régimes de fonctionnement, nous confirmons les hautes performances de lien de communication cohérente utilisant ces lasers peigne de fréquence.
Published: 2020

18. Long cavity hybrid InP/SiN mode-locked lasers

Author: Frederic van Dijk, Yasmine Ibrahimi, Jean-Marc Fedeli, Stephanie Garcia, Catherine Fortin, Alexandre Garreau, Karim Mekhazni, Francois Duport, Corrado Sciancalepore, Sylvain Boust, Quentin Wilmart, Jean-Francois Paret, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Direction Generale pour l'Armement (DGA), European Defense Agency (EDA), Leonardo S.p.a. of the European Defense Agency [B-1487-IAP1-GP], Thales Research and Technologies [Orsay] (TRT), THALES [France], Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Waveguide lasers, Materials science, business.industry, Mode (statistics), Active mode, 02 engineering and technology, mode-locked laser, Laser, 01 natural sciences, Semiconductor laser theory, law.invention, 010309 optics, [SPI]Engineering Sciences [physics], 020210 optoelectronics & photonics, Mode-locking, law, Distributed Bragg reflector lasers, hybrid lasers, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Harmonic, Laser mode locking, Optoelectronics, business, comb source
Abstract: International audience; In this paper, we present a 1.19 GHz integrated mode locked laser based on III-V/Si3N4 butt-coupling. We report the results of active mode locking and harmonic mode locking up to the 2nd harmonic. We also present the preliminary results on another mode locked lasers at repetition rate 360 MHz. To the best of our knowledge, this laser is the lowest repetition rate for an integrated hybrid laser on III-V/Si3N4.
Published: 2020

19. High speed mid-IR Quantum Cascade Detector at room temperature

Author: A. Evirgen, Stefano Barbieri, J-F. Lampin, M. Hakl, A. Delga, V. Trinite, G. Quinchard, A. Larrue, E. Peytavit, C. Mismer, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Photonique THz - IEMN (PHOTONIQ THz - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), THALES [France]-ALCATEL, and Photonique THz - IEMN (PHOTONIQUE THz - IEMN)
Subjects: Patch antenna, Heterodyne, Materials science, business.industry, Terahertz radiation, Detector, Astrophysics::Instrumentation and Methods for Astrophysics, Heterojunction, 02 engineering and technology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, 01 natural sciences, 010309 optics, [SPI]Engineering Sciences [physics], Condensed Matter::Materials Science, Cascade, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Antenna (radio), 0210 nano-technology, business, Coherence (physics)
Abstract: International audience; We present a high-speed antenna enhanced Quantum Cascade Detector at 10.3μm. By using a coherent detection scheme and thin InGaAs/AlInAs heterostructure embedded in metal-metal patch antenna, we demonstrate a heterodyne response up to 67 GHz at room temperature.
Published: 2020

20. High speed, antenna-enhanced 10.3μm quantum cascade detector

Author: G. Quinchard, C. Mismer, M. Hakl, J. Pereira, Q. Lin, S. Lepillet, V. Trinité, A. Evirgen, E. Peytavit, J. L. Reverchon, J. F. Lampin, S. Barbieri, A. Delga, Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), This work was partially supported by the French National Research Agency, and Direction Générale de l’Armement (project HISPANID), Nord-Pas de Calais Regional Council, Fonds Européens de Développement Régional, RENATECH (French Network of Major Technology Centres), and CPER 'Photonics for Society.', Renatech Network, PCMP CHOP, and ANR-17-ASTR-0008,Hispanid,Détecteur infrarouge hétérodyne haute fréquence(2017)
Subjects: Photovoltaics, Photonic materials, RC circuits, Physics and Astronomy (miscellaneous), Photoconductivity, Optical communications, Lasers, Photodetectors, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Infrared photodetector, Waveguides, Electronic band structure, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract: International audience; The strong potential of intersubband detectors in the field of mid-infrared photodetection places this technology as a relevant alternative to HgCdTe detectors in the race for ultrafast operation. While their extremely short photocarrier's lifetime opens up possibilities of detection beyond 100 GHz, it is also the main reason for their comparatively high dark current. Here, a photovoltaic quantum cascade detector at 10.3 μm, embedded in a metal–metal patch antenna is presented in both direct and heterodyne detection schemes. In DC, a responsivity of 122 mA/W at 77 K and 85 mA/W at 295 K is reached. More strikingly, the device shows temperature independent heterodyne response with a capacitance-limited cutoff frequency of 25 GHz both at 77 K and room temperature. It is modeled quantitatively by means of an equivalent RC-circuit picture stemming from microscopic transport considerations.
Published: 2022

21. 80 GHz beatnote generation in a single tapered distributed feedback hybrid III-V / silicon laser

Author: Grillot, Frederic, Callado, G., Verolet, T., Jany, Christophe, Hassan, K., Malhouitre, Stephane, Coquiard, A., Combrie, Sylvain, Shen, A., De Rossi, A., Télécommunications Optiques (GTO), Laboratoire Traitement et Communication de l'Information (LTCI), Institut Mines-Télécom [Paris] (IMT)-Télécom Paris-Institut Mines-Télécom [Paris] (IMT)-Télécom Paris, Département Communications & Electronique (COMELEC), Télécom ParisTech-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS)-Télécom ParisTech-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS)-Ecole Nationale Supérieure des Télécommunications (ENST), Institut Polytechnique de Paris (IP Paris), Thales Research and Technologies [Orsay] (TRT), THALES [France], Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire d'électronique et des technologies de l'Information [Sfax] (LETI), École Nationale d'Ingénieurs de Sfax | National School of Engineers of Sfax (ENIS), THALES, and THALES-ALCATEL
Subjects: [SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2020

22. Comparison of AlGaInAs-Based Laser Behavior Grown on Hybrid InP-SiO₂/Si and InP Substrates

Author: Sylvain David, Jean Decobert, Nicolas Vaissiere, Delphine Néel, Cecilia Dupre, Frank Fournel, Claire Besancon, Christophe Jany, Dalila Make, Franck Bassani, Thierry Baron, Giancarlo Cerulo, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Laboratoire d'Intégration des Systèmes et des Technologies (LIST), and THALES-ALCATEL
Subjects: [PHYS]Physics [physics], Threshold current, Fabrication, Materials science, Laser diode, business.industry, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Laser, Epitaxy, 01 natural sciences, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, law.invention, 010309 optics, law, 0103 physical sciences, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, Lasing threshold, ComputingMilieux_MISCELLANEOUS
Abstract: In this work, we present the fabrication process of a $3~\mu \text{m}$ -thick AlGaInAs-based vertical p-i-n laser diode structure grown on a directly bonded InP-SiO2/Si (InPoSi) substrate. High-quality epitaxial growth on InPoSi is reported. Based on these structures, the fabrication process of Fabry-Perot broad lasers is presented. Device performance is compared to the ones obtained from the same growth run on an InP substrate as a reference. High electrical properties of the n and p contacts are demonstrated. Lasing operation in the pulse regime is shown up to 50°C. Threshold current densities as low as 0.4 kA/cm 2 at 20°C are obtained for the laser on InPoSi, comparable to the ones obtained for the reference on InP substrate.
Published: 2020

23. Kinetic study of hydrogen lateral diffusion at high temperature in a directly-bonded InP-SiO 2 /Si substrate

Author: Loic Sanchez, Thierry Baron, S. David, V Muffato, Franck Bassani, Frank Fournel, Christophe Jany, C Besancon, Jean Decobert, J-P Le Goec, Cecilia Dupre, Nicolas Vaissiere, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Alcatel-Thales III-V Lab (III-V Lab), THALES, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Centre National de la Recherche Scientifique (CNRS), THALES [France], THALES [France]-ALCATEL, Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), and Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)
Subjects: Materials science, Silicon, chemistry.chemical_element, Bioengineering, 02 engineering and technology, Direct bonding, 010402 general chemistry, Epitaxy, 7. Clean energy, 01 natural sciences, General Materials Science, Wafer, Metalorganic vapour phase epitaxy, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, [PHYS]Physics [physics], Silicon photonics, business.industry, Mechanical Engineering, Heterojunction, General Chemistry, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Outgassing, chemistry, Mechanics of Materials, Optoelectronics, 0210 nano-technology, business
Abstract: Hybrid integration of III-V materials onto silicon by direct bonding technique is a mature and promising approaches to develop advanced photonic integrated devices into the silicon photonics platform. In this approach, the III-V material stack is grown on an InP wafer in a unique epitaxial step prior to the direct bonding process onto the silicon-on-insulator wafer. Currently, no additional epitaxial regrowth steps are implemented after bonding. This can be seen as a huge limitation as compared to the III-V on III-V wafer mature technology where multi-regrowth steps are most often implemented. In this work, we have studied the material behavior of an InP membrane on silicon (InPoSi) under epitaxial regrowth conditions by metal-organic vapor phase epitaxy (MOVPE). MOVPE requires high-temperature elevation, typically above 600 °C. We show for the first time the appearance of voids at 400 °C in an InP seed (100 nm) directly-bonded onto a thermally oxidized Si substrate despite the use of a thick SiO2 oxide (200 nm) at the bonding interface. This phenomenon is explained by a weakening of the bonding interface while high-pressurized hydrogen is present. A kinetic study of the hydrogen lateral diffusion is carried out, enabling the assessment of its lateral diffusion length. To overcome the void formation, highly efficient outgassing trenches after bonding are demonstrated. Finally, high-quality AlGaInAs-based multi-quantum well (MQW) heterostructure surrounded by two InP layers was grown by MOVPE on InPoSi template patterned with outgassing trenches. This process is not only compatible with MOVPE regrowth conditions (650 °C under PH3) but also with conventional fabrication processes used for photonic devices.
Published: 2020

24. O-band Reflective Electroabsorption Modulator for 50 Gb/s NRZ and PAM-4 Colorless Transmission

Author: Kebede Atra, Jean-Guy Provost, F. Pommereau, Mohand Achouche, Giancarlo Cerulo, Alexandre Garreau, Didier Erasme, Fabrice Blache, Cédric Ware, Catherine Fortin, Carmen Gomez, Filipe Jorge, Franck Mallecot, Karim Mekhazni, Laboratoire Traitement et Communication de l'Information (LTCI), Institut Mines-Télécom [Paris] (IMT)-Télécom Paris, Télécommunications Optiques (GTO), Institut Mines-Télécom [Paris] (IMT)-Télécom Paris-Institut Mines-Télécom [Paris] (IMT)-Télécom Paris, Département Communications & Electronique (COMELEC), Télécom ParisTech, Alcatel-Thalès III-V lab (III-V Lab), and THALES-ALCATEL
Subjects: Materials science, Extinction ratio, business.industry, Equalization (audio), 02 engineering and technology, 01 natural sciences, 010309 optics, [INFO.INFO-NI]Computer Science [cs]/Networking and Internet Architecture [cs.NI], 020210 optoelectronics & photonics, Transmission (telecommunications), Modulation, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, business, ComputingMilieux_MISCELLANEOUS, Voltage
Abstract: we present a 50 Gb/s O-band reflective electroabsorption modulator operating in both non-return-to-zero (NRZ) and PAM-4 modulation formats without equalization. We obtained >9 dB NRZ dynamic extinction ratio for a peak-to-peak voltage of 2.4 V.
Published: 2020

25. Fast High-Fidelity Quantum Nondemolition Qubit Readout via a Nonperturbative Cross-Kerr Coupling

Author: Wiebke Hasch-Guichard, Sebastien Leger, Tomás Ramos, Nicolas Roch, Vladimir Milchakov, Farshad Foroughi, Karthik Srikanth Bharadwaj, Remy Dassonneville, Javier Puertas, Olivier Buisson, Etienne Dumur, Luca Planat, Juan José García-Ripoll, Jovian Delaforce, Cécile Naud, Circuits électroniques quantiques Alpes (QuantECA), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Instituto de Física Fundamental [Madrid] (IFF), Consejo Superior de Investigaciones Científicas [Madrid] (CSIC), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Agence Nationale de la Recherche (France), Ministerio de Ciencia, Innovación y Universidades (España), Comunidad de Madrid, and European Commission
Subjects: Physics::Instrumentation and Detectors, QC1-999, media_common.quotation_subject, FOS: Physical sciences, General Physics and Astronomy, Fidelity, 01 natural sciences, 010305 fluids & plasmas, High fidelity, Computer Science::Systems and Control, Quantum state, Quantum mechanics, 0103 physical sciences, Quantum information, 010306 general physics, Quantum, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], media_common, Coupling, Physics, Superconductivity, Quantum Physics, ComputerSystemsOrganization_MISCELLANEOUS, Qubit, Quantum Information, Quantum Physics (quant-ph)
Abstract: 17 pags., 9 figs., 3 tabs., 5 apps., Qubit readout is an indispensable element of any quantum information processor. In this work, we experimentally demonstrate a nonperturbative cross-Kerr couplingbetween a transmon and polariton mode which enables an improved quantum nondemolition (QND) readout for superconducting qubits. The new mechanism uses the same experimental techniques as the standard QND qubit readout in the dispersive approximation, but due to its nonperturbative nature, it maximizes the speed, the single-shot fidelity, and the QND properties of the readout. In addition, it minimizes the effect of unwanted decay channels such as the Purcell effect. We observe a single-shot readout fidelity of 97.4% for short 50-ns pulses and we quantify a QND-ness of 99% for long measurement pulses with repeated single-shot readouts., R. D. and S. L. acknowledge support from Fondation CFM pour la recherche. R. D., V. M., and O. B. acknowledge support from ANR REQUIEM (ANR-17-CE24-0012-01). J. J. G.-R. and T. R. acknowledge support from Project No. PGC2018-094792-B-I00 (MCIU/ AEI/FEDER, UE) and CAM/FEDER Project No. S2018/ TCS-4342 (QUITEMAD-CM). T. R. further acknowledges funding from the EU Horizon 2020 program under the Marie Skłodowska-Curie Grant Agreement No. 798397. S. L. acknowledges the Agence Nationale de la Recherche under the program Investissements d’avenir (ANR-15-IDEX02). K. B. and J. D. acknowledge the European Union’s Horizon 2020 research and innovation program under the Marie Sklodowska-Curie Grant Agreement No. 754303. J. P. acknowledges grant from the Laboratoire d'excellence LANEF in Grenoble (ANR-10-LABX-51-01).
Published: 2020

26. Te doping of GaAs and GaInP using diisopropyl telluride (DIPTe) for tunnel junction applications

Author: José Alvarez, Alexandre Larrue, Gwenaëlle Hamon, Nicolas Paillet, Jean Decobert, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), TOTAL S.A., TOTAL FINA ELF, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-CentraleSupélec-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), and Association Nationale de la Recherche et de la Technologie 2014/1031
Subjects: Materials science, chemistry.chemical_element, 02 engineering and technology, Epitaxy, 01 natural sciences, 7. Clean energy, Gallium arsenide, Inorganic Chemistry, B1. Semiconducting gallium arsenide, [SPI]Engineering Sciences [physics], chemistry.chemical_compound, Tunnel junction, Telluride, 0103 physical sciences, Materials Chemistry, Metalorganic vapour phase epitaxy, Gallium, 010302 applied physics, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, A2. Metalorganic vapor phase epitaxy, chemistry, Indium phosphide, Optoelectronics, B3. Multijunction solar cells, A1. Doping, 0210 nano-technology, business, Tellurium
Abstract: In this work, we have investigated the growth of highly n-doped gallium arsenide (GaAs) and gallium indium phosphide (GaInP) with tellurium (Te) by metal organic vapor phase epitaxy (MOVPE) using diisopropyl telluride (DIPTe), aiming at fabricating high performances tunnel junctions. A parametric study is performed in order to optimize the n++-type doping. Concentrations above 2.7 × 1019 cm−3 were achieved in both GaAs and GaInP layers. Using these Te-doped layers, we fabricated both n on p (n/p) and p on n (p/n) tunnel junctions. The p/n tunnel junction required additional annealing steps during growth, due to memory effect and surfactant properties of Te. We characterized GaAs/GaAs, GaAs/AlGaAs and AlGaAs/GaInP tunnel junctions with peak tunneling current densities as high as 250, 3000 and 1500 A/cm2 respectively. These tunnel junction performances are suitable for multijunction solar cells operating under high concentration.
Published: 2018

27. Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO 2 /Si Substrate

Author: Claire Besancon, Thierry Baron, Cecilia Dupre, Jean Decobert, Franck Bassani, Nicolas Vaissiere, Sylvain David, Frank Fournel, Loic Sanchez, Christophe Jany, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Alcatel-Thales III-V Lab (III-V Lab), THALES, Laboratoire d'Intégration des Systèmes et des Technologies (LIST), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), THALES [France], Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), and THALES [France]-ALCATEL
Subjects: [PHYS]Physics [physics], Silicon photonics, Materials science, business.industry, 02 engineering and technology, Surfaces and Interfaces, Direct bonding, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, 020210 optoelectronics & photonics, Quality (physics), Si substrate, 0202 electrical engineering, electronic engineering, information engineering, Materials Chemistry, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2019

28. A Multiscale TCAD Approach for the Simulation of InP DHBTs and the Extraction of Their Transit Times

Author: Sebastien Fregonese, Bertrand Ardouin, Christian Raya, Marina Deng, Colombos Bolognesi, Chhandak Mukherjee, Wei Quan, Akshay M. Arabhavi, Mathieu Luisier, Xin Wen, Cristell Maneux, Thomas Zimmer, Olivier Ostinelli, Virginie Nodjiadjim, Muriel Riet, Laboratoire de l'intégration, du matériau au système (IMS), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1, XMOD Technologies, Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), Ecole Centrale de Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology in Zürich [Zürich] (ETH Zürich), Nanoélectronique/MODEL, Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1-Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1, Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology [Zürich] (ETH Zürich), and Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS)-Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS)
Subjects: Compact model, Device simulation, Double heterojunction bipolar transistors (DHBTs), GaAsSb/InPDHBTs, HiCuM, InGaAs/InP DHBTs, Transit time, Materials science, Terahertz radiation, 7. Clean energy, 01 natural sciences, law.invention, chemistry.chemical_compound, law, 0103 physical sciences, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, device simulation, business.industry, Bipolar junction transistor, Transistor, transit time, Heterojunction, Solver, Electrostatics, Electronic, Optical and Magnetic Materials, GaAsSb/InP DHBTs, Index Terms-Compact model, chemistry, Indium phosphide, Optoelectronics, Electric potential, dou- ble heterojunction bipolar transistors (DHBTs), business
Abstract: International audience; A multiscale technology computer-aided design (TCAD) simulation methodology is presented to calculate the intrinsic transit time of InP double heterojunction bipolar transistors (DHBTs). A 2-D hyd-rodynamic (HD) simulator is employed to produce the dc characteristics and electrostatic potentials of the selected devices. Utilizing the cuts of the obtained potential profiles as inputs, a 1-D full-band, atomistic quantum transport (QT) solver is then deployed to determine the ballistic electronic transport properties of these components. The transit times of DHBTs based on InGaAs/InP and GaAsSb/InP technologies are finally investigated with the proposed approach. Good qualitative agreements are observed with the experimental measurements. The observed underestimations of the experimental transit times are justified with the physics-based compact model HiCuM, thus providing a basis for structure and performance optimizations toward real terahertz transistors.
Published: 2019

29. Wideband Gain MQW-SOA Modeling and Saturation Power Improvement in a Tri-Electrode Configuration

Author: Pascal Morel, A. Verdier, Ammar Sharaiha, Mikael Guegan, Romain Brenot, T. Motaweh, Laboratoire des sciences et techniques de l'information, de la communication et de la connaissance (Lab-STICC), École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-Télécom Bretagne-Institut Brestois du Numérique et des Mathématiques (IBNM), Université de Brest (UBO)-Université européenne de Bretagne - European University of Brittany (UEB)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS), École Nationale d'Ingénieurs de Brest (ENIB), Lab-STICC_UBO_MOM_DIM, Université de Brest (UBO)-Université européenne de Bretagne - European University of Brittany (UEB)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS)-École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-Télécom Bretagne-Institut Brestois du Numérique et des Mathématiques (IBNM), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, and ANR-10-VERS-0011,UltraWIDE,Amplificateur intégré ultra-large-bande pour systèmes optiques WDM améliorés(2010)
Subjects: Optical amplifier, Materials science, business.industry, Bandwidth (signal processing), Gain, 02 engineering and technology, Noise figure, Fully differential amplifier, Atomic and Molecular Physics, and Optics, 020210 optoelectronics & photonics, Optics, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Semiconductor optical gain, Wideband, business, Saturation (magnetic)
Abstract: International audience; A semi-phenomenological wideband model is proposed for both the material gain and the gain coefficient of a multi-quantum well semiconductor optical amplifier (MQW-SOA). This analytical model is integrated in a SOA-dedicated simulation tool and validated experimentally over a wide range of bias currents, input powers and wavelengths. We demonstrate the ability of multi-electrode configurations to increase the saturation power of MQW-SOA without sacrificing either their noise figure or their optical gain bandwidth. A tri-electrode configuration permits to obtain an enhancement of the MQW-SOA output saturation power of more than 3 dB over 100 nm while maintaining its optical bandwidth (defined at -1 dB) at about 76 nm.
Published: 2017

30. Performing broadband optical transmission links by appropriate spectral combination of broadband SOA gain, Raman amplification and transmission fiber losses

Author: Agnès Verdier, T. Motaweh, Ammar Sharaiha, Romain Brenot, Pascal Morel, Mikael Guegan, Laura Ghisa, Laboratoire des sciences et techniques de l'information, de la communication et de la connaissance (Lab-STICC), École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-Télécom Bretagne-Institut Brestois du Numérique et des Mathématiques (IBNM), Université de Brest (UBO)-Université européenne de Bretagne - European University of Brittany (UEB)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS), École Nationale d'Ingénieurs de Brest (ENIB), Lab-STICC_UBO_MOM_DIM, Université de Brest (UBO)-Université européenne de Bretagne - European University of Brittany (UEB)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS)-École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-Télécom Bretagne-Institut Brestois du Numérique et des Mathématiques (IBNM), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, ANR-06-TCOM-0034,AROME,Amplificateur bas-coût pour Réseaux Optiques MEtropolitains et d'accès(2006), and ANR-10-VERS-0011,UltraWIDE,Amplificateur intégré ultra-large-bande pour systèmes optiques WDM améliorés(2010)
Subjects: Raman amplification, Materials science, 02 engineering and technology, Broadband transmission, Wavelength division multiplexing (WDM), 7. Clean energy, 01 natural sciences, 010309 optics, 020210 optoelectronics & photonics, Optics, Gigabit, Wavelength-division multiplexing, 0103 physical sciences, Broadband, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, Physical and Theoretical Chemistry, Transmission system, Broadband SOA and Raman amplification, business.industry, Bandwidth (signal processing), Atomic and Molecular Physics, and Optics, Optical amplification bandwidth, Semiconductor Optical Amplifier (SOA), Electronic, Optical and Magnetic Materials, Transmission fiber, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, business
Abstract: International audience; We present the principle of a broadband optical transmission link based on the appropriate combination of the spectral profiles of broadband SOA gain, Raman amplification and transmission fiber losses. We show that, thanks to this principle, a bandwidth as wide as 89 nm (defined at −1 dB) over 75.5 km can be obtained. This bandwidth remains better than 80 nm over a wide range of optical input powers and broadband SOA bias currents, by optimizing the Raman pump. We also show theoretically that the bandwidth of our link is nearly constant for a fiber length from 25 to 100 km optimizing the SOA current. Our broadband transmission link, extended by 24.5 km of fiber, is then validated by achieving the transmission of five CWDM channels modulated at 10 Gbit/s. All five channels were transmitted over 100 km with a minimum received power sensibility of about −15.5 dBm for a reference BER of 10−3.
Published: 2017

31. Characterization of solar array's cells to substrate bonding interface

Author: Romain Couderc, Philippe Voarino, Bernard Boulanger, Yannick Roujol, Frederic Bourcier, Honorine Boirard, Etienne Rapp, Romain Cariou, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Thales Alenia Space [Cannes], Thales Alenia Space, CEA Le Ripault (CEA Le Ripault), Direction des Applications Militaires (DAM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre National d'Études Spatiales [Toulouse] (CNES), THALES [France]-ALCATEL, Thales Alenia Space [Toulouse] (TAS), THALES [France], and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, integumentary system, business.industry, Interface (computing), Photovoltaic system, food and beverages, 02 engineering and technology, Substrate (printing), Electroluminescence, 021001 nanoscience & nanotechnology, 7. Clean energy, Trapped air, Characterization (materials science), [SPI]Engineering Sciences [physics], biological sciences, Optoelectronics, Transient (oscillation), 0210 nano-technology, business, Transient electroluminescence, ComputingMilieux_MISCELLANEOUS
Abstract: Standard space solar arrays consist of solar cells protected by coverglass, glued individually on rigid substrate. The solar cells / substrate bonding interface quality is crucial since trapped air bubbles at this interface can cause strong cell damages once under vacuum. In this study, we show that transient electroluminescence can be used as a fast and nondestructive characterization tool to map the solar cells rear-side gluing interface defects.
Published: 2019

32. Drain Current Recovery Time Analyses of InAlGaN/GaN HEMTs Realized with a Back-Barrier Buffer Layer

Author: J.C. Jacquet, Piero Gamarra, Eric Chartier, Stéphane Piotrowicz, Sylvain Delage, C. Potier, M. Oualli, N. Michel, P. Altuntas, Christian Dua, Michel Prigent, Jean-Christophe Nallatamby, Cedric Lacam, O. Patard, Alcatel-Thales III-V Lab (III-V Lab), THALES, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Systèmes RF (XLIM-SRF), XLIM (XLIM), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, business.industry, 020208 electrical & electronic engineering, Gate length, 020206 networking & telecommunications, 02 engineering and technology, Electron, High-electron-mobility transistor, Buffer (optical fiber), [SPI]Engineering Sciences [physics], Sic substrate, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, business, Drain current, Layer (electronics), Microwave, ComputingMilieux_MISCELLANEOUS
Abstract: This article presents the performances obtained on a $0.15 \mu \mathrm{m}$ gate length InAlGaN/GaN HEMT technology on SiC substrate. This technology uses a back-barrier buffer layer to ensure the confinement of electrons in the channel, which minimizes variations of the drain current when the HEMT devices are submitted to DC or RF pulses. Measurements of the drain current recovery time are shown when the devices are submitted to V DS , V GS or microwave RF pulses. A comparison with an AlGaN/GaN HEMT structure designed with an iron doped buffer layer is proposed.
Published: 2019

33. First space concentrator prototype using III-V/Si cells

Author: Olivier Raccurt, Christophe Jany, Philippe Voarino, Anderson Bermudez-Garcia, Karim Medjoubi, Romain Cariou, Laura Vauche, CEA Le Ripault (CEA Le Ripault), Direction des Applications Militaires (DAM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Nexcis, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), ARC-Nucleart CEA Grenoble (NUCLEART), Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), THALES-ALCATEL, Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de L'Energie Solaire (INES), and Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
Subjects: Materials science, Silicon, business.industry, chemistry.chemical_element, Germanium, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, Space (mathematics), Concentrator, 01 natural sciences, 7. Clean energy, 0104 chemical sciences, law.invention, Lens (optics), [SPI]Engineering Sciences [physics], Electric power system, chemistry, Photovoltaics, law, Optoelectronics, 0210 nano-technology, business, Nonimaging optics, ComputingMilieux_MISCELLANEOUS
Abstract: Concentrating PhotoVoltaics (CPV) can increase the efficiency of power systems in space while reducing their cost. This paper presents the first concentrator prototype using III-V/Si cells for space applications. This new approach will significantly reduce cost by concentrating sunlight then decreasing cell material, and in particular using III-V/Si triple-junction (3J) cells will allow the usage of Silicon, which is an abundant, twice less dense and low-cost material than the typically used Germanium. The efficiency of III-V/Si solar cells used is 25.7% @AM0. In our refractive module design, Compound Parabolic Concentrator (CPC), twelve 1.5x13mm2 cells are embedded in a Dow Corning® 93-500 silicone optics that provides an ∼8x concentration factor with an optical efficiency of 68%. Additionally, this linear-focus lens enables the use of single-axis sun tracking.
Published: 2019

34. Cl2/Ar based atomic layer etching of AlGaN layers

Author: P. Altuntas, Jorge Pereira, O. Patard, Christophe Gaquiere, Piero Gamarra, Sylvain Delage, Nicolas Defrance, N. Michel, Jean-Claude De Jaeger, Cedric Lacam, Sébastien Aroulanda, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Alcatel-Thales III-V Lab (III-V Lab), THALES, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), The authors acknowledge support from GANEX (No.ANR-11-LABX-0014). GANEX belongs to the publicfunded'Investissements d’Avenir'program managed by theFrench ANR agency., ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), THALES [France], and THALES [France]-ALCATEL
Subjects: Two-dimensional electron gas, Materials science, Surface finish, High-electron-mobility transistor, macromolecular substances, Field effect transistors, 01 natural sciences, 7. Clean energy, Nitrides, Semiconductor materials, [SPI]Engineering Sciences [physics], Adsorption, Etching (microfabrication), 0103 physical sciences, Surface roughness, Heterostructures, Reactive-ion etching, Atomic-layer etching, 010302 applied physics, business.industry, Wide-bandgap semiconductor, Surfaces and Interfaces, Condensed Matter Physics, Surfaces, Coatings and Films, Semiconductor device fabrication, Optoelectronics, business, Layer (electronics)
Abstract: International audience; This paper reports on atomic layer etching of several III-N materials such as GaN, AlN, AlGaN, and InAlGaN based on a sequential surface modification by chlorine adsorption followed by a low energy Ar plasma exposure to remove the modified layer using a reactive ion etching system. A study on the influence of several parameters, such as gas flow rates, removal step duration, RIE power and number of cycles on the etch per cycle, and the root-mean-square roughness, is performed. Low etch per cycle from 0.17 to 1.85 nm/cycle, respectively, for AlGaN and GaN and surfaces as smooth as the as-grown samples were obtained. The developed process is intended to be used for normally off GaN-based high electron mobility transistor processing.
Published: 2019

35. Phase Synchronization of Monolithic Dual DFB Lasers for Microwave Photonics: Experiment vs Model

Author: Frederic van Dijk, Aurelien Thorette, Marco Romanelli, Marc Vallet, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), and THALES-ALCATEL
Subjects: [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, business.industry, Physics::Optics, 02 engineering and technology, Laser, Phase synchronization, 01 natural sciences, 7. Clean energy, law.invention, 010309 optics, Amplitude modulation, 020210 optoelectronics & photonics, Modulation, law, Optical Carrier transmission rates, 0103 physical sciences, Phase noise, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, business, Microwave, Spectral purity
Abstract: International audience; The experimental implementation of optically carried RF signals, in the 1-100 GHz range and beyond, is fundamental for microwave photonics applications. The technique of heterodyning two laser waves provides an interesting alternative to direct modulation of light. Indeed, it allows generating directly a single-sideband signal over an optical carrier, that is inherently insensitive to dispersion in a fiber link. It also features a 100% modulation depth, a broad and continuous tunability. Phase-locking to electronic local oscillators results in optical beatings of very high spectral purity; furthermore, high microwave frequencies 100 GHz) can be reached by suitable multiplication or downconversion techniques (at the expense of a degradation of the phase noise performances)
Published: 2019

36. Single-sideband hybrid opto-electronic oscillator

Author: Marc Vallet, Steve Bouhier, Mehdi Alouini, Marco Romanelli, Frederic van Dijk, Aurelien Thorette, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES), and THALES-ALCATEL
Subjects: Physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Optical fiber, business.industry, 020208 electrical & electronic engineering, Physics::Optics, 02 engineering and technology, Feedback loop, Opto-electronic oscillator, Noise (electronics), law.invention, Interferometry, 020210 optoelectronics & photonics, law, Dispersion (optics), Phase noise, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, business, Compatible sideband transmission
Abstract: International audience; Opto-electronic oscillators (OEO) are important building blocks in microwave photonics systems, allowing to obtain low-phase noise optically-carried radiofrequency signals. We have recently demonstrated an OEO scheme based on a monolithic dual-frequency source, whose beatnote is self-stabilized using frequency-shifted optical feedback, and a delay line [2]. The main interest of such a setup is that it allows the generation of single-sideband signals, which are thus insensitive to dispersion fading when propagating in optical fibers. The scheme presented offered good short-term performances. However, it could be affected by mode-hopping due to both the resonant modes of the optical feedback loop, and to those of the optoelectronic loop including the delay line. In the present work, we present significant improvements, namely the complete suppression of mode-hopping, and a significant reduction of the spurs in the phase noise spectrum. This has been obtained by (i) the introduction of a RF interferometer thanks to the use of two delay lines, and (ii) a significant shortening of the optical feedback loop (see Fig. 1(a)).
Published: 2019

37. Opto-electronic oscillator based on hybrid feedback loop for single-side band operation

Author: Thorette, Aurélien, Romanelli, Marco, Bouhier, Steve, Van Dijk, Frederic, Alouini, Mehdi, Vallet, Marc, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), and THALES [France]-ALCATEL
Subjects: [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]
Abstract: International audience; We demonstrate single-sideband opto-RF oscillation using monolithic InGaAsP DFB lasers. The heterodyne signal is stabilised by a hybrid method that combines optical reinjection and delayed opto-electronic feedback, leading to a locking of the beatnote onto a filtered version of itself. Mode-hop suppression has been obtained by (i) the introduction of a RF interferometer thanks to the use of two delay lines, and (ii) a significant shortening of the optical feedback loop, which also implies the use of direct current modulation. Our setup provides a phase noise level down to −75 dBc/Hz at 1 kHz offset from a 10 GHz carrier.
Published: 2019

38. Laser hybride intégré sur InP-Si3N4/SiO2 à faible largeur de raie

Author: Boust, Sylvain, Primiani, Peppino, Gomez, Carmen, Paret, Jean-François, Garreau, Alexandre, Mekhazni, Karim, Fortin, Catherine, Makhsiyan, Mathilde, Fedeli, Jean-Marc, Duport, François, Van Dijk, Frederic, Vallet, Marc, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Société Française d'Optique, Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), and THALES [France]-ALCATEL
Subjects: [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]
Abstract: International audience; Nous présentons un laser hybride intégré sur puce InP-Si3N4/SiO2 atteignant une largeur de raie de 23 kHz. Une accordabilité électrique continue de 91 pm à 1546.1 nm, combinée à un taux de réjection moyen de 74 dB, est expérimentalement démontrée.
Published: 2019

39. High-quality Epitaxial Growth of AlGaInAs-based Active Structure on a Directly-Bonded InPoSi Substrate

Author: Franck Bassani, Sylvain David, Claire Besancon, Nicolas Vaissiere, Frank Fournel, Viviane Muffato, Thierry Baron, Jean-Pierre Le Goec, Jean Decobert, Christophe Jany, Cecilia Dupre, Alcatel-Lucent Bell Labs, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and THALES [France]-ALCATEL
Subjects: Silicon photonics, Active structure, Materials science, business.industry, Heterojunction, 02 engineering and technology, Direct bonding, Substrate (electronics), Epitaxy, 020210 optoelectronics & photonics, Quality (physics), Material quality, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, ComputingMilieux_MISCELLANEOUS
Abstract: Epitaxial growth of high material quality $1.55\boldsymbol{\mu} \mathbf{m}$ AlGaInAs Multiquantum Wells Heterostructure on a directly-bonded InPoSi substrate has been developed for datacom applications.
Published: 2019

40. Technologie InAlGaN/GaN/SiC à faibles effets mémoires délivrant 10W/mm à 30 GHz

Author: Piotrowicz, Stéphane, Patard, O., Gamarra, P., Potier, Clément, Chartier, E., Dua, C., Jacquet, J.C., Lacam, M., Michel, N., Nallatamby, Jean-Christophe, Ouali, M., ALTUNTAS, P., Prigent, Michel, Delage, Sylvain, Alcatel-Thales III-V Lab (III-V Lab), THALES, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Alcatel-Thalès, Marcoussis (91), Systèmes RF (XLIM-SRF), XLIM (XLIM), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
Subjects: [SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract: International audience
Published: 2019

41. Characterization of dual‐junction III‐V on Si tandem solar cells with 23.7% efficiency under low concentration

Author: Claire Besancon, Laura Vauche, Alejandro Datas, Pablo Garcia-Linares, Philippe Voarino, Cecilia Dupre, Elias Veinberg-Vidal, Jean Decobert, Karim Medjoubi, Anne Kaminski-Cachopo, Clément Weick, Pierre Mur, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), and THALES [France]-ALCATEL
Subjects: Materials science, Wafer bonding, Energía Eléctrica, 02 engineering and technology, 010402 general chemistry, 7. Clean energy, 01 natural sciences, law.invention, law, Solar cell, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, Optical filter, ComputingMilieux_MISCELLANEOUS, Common emitter, Tandem, Renewable Energy, Sustainability and the Environment, business.industry, Heterojunction, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Suns in alchemy, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, Energías Renovables, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Electrónica, Solar simulator, 0210 nano-technology, business
Abstract: Monolithic two‐terminal III‐V on Si dual‐junction solar cells, designed for low concentration applications, were fabricated by means of surface‐activated direct wafer bonding. The III‐V top cell is a heterojunction formed by an n‐Ga₀.₅In₀.₅P emitter and a p‐Al₀.₂Ga₀.₈As base. An efficiency of 21.1 ± 1.5% at one sun and 23.7 ± 1.7% at 10 suns is demonstrated, which to our knowledge is the best dual‐junction two‐terminal III‐V on Si tandem cell efficiency reported to date under verified reference conditions. The I‐V characterization of these 1‐cm² tandem cells under concentration required the development of a new method using a single‐source multiflash solar simulator and not perfectly matched component cells, also known as pseudo‐isotypes, formed by Si single‐junction cells and optical filters. In addition, the spectrum of the pulsed solar simulator was measured using a high‐speed CMOS spectrometer, allowing the calculation of the spectral mismatch correction factor. Merging these two techniques results in the hybrid corrected pseudo‐isotype (HCPI) characterization method, which shows a fast and accurate performance with a simplified procedure based on a single‐source solar simulator. Pseudo‐isotypes are easily adaptable to new cell designs by simply using a different filter, hence allowing the characterization of new multijunction solar cell architectures.
Published: 2019

42. Risk factors for treatment failure in scabies: a cohort study

Author: Aussy, A., Houivet, E., Hébert, V., Colas‐Cailleux, H., Laaengh, N., Richard, C., Ouvry, M., Boulard, C., Leger, S., Litrowski, N., Bénichou, J., Joly, P., Béchu, Stéphane, Mion‐Mouton, N., Lafaurie, O., Barrel, A., Pulluard, M., Hamel, V., Dore, M.X., Duflo, E., Lardans‐Cassius, S., Rzeznik, J.C., Baricault, S., Unité de biostatistiques [CHU Rouen], Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-CHU Rouen, Normandie Université (NU), Service de Dermatologie [Rouen], CHU Rouen, Normandie Université (NU)-Normandie Université (NU)-Hôpital Charles Nicolle [Rouen], Physiopathologie, Autoimmunité, maladies Neuromusculaires et THErapies Régénératrices (PANTHER), Normandie Université (NU)-Normandie Université (NU)-Institut National de la Santé et de la Recherche Médicale (INSERM), Photochimie moléculaire et macromoléculaire (PMM), Centre National de la Recherche Scientifique (CNRS)-Université Blaise Pascal - Clermont-Ferrand 2 (UBP)-Institut de Chimie du CNRS (INC), Institut de biologie et chimie des protéines [Lyon] (IBCP), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Laboratoire Interuniversitaire de Biologie de la Motricité (LIBM ), Université de Lyon-Université de Lyon-Université Jean Monnet [Saint-Étienne] (UJM)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry]), Normandie Université (NU)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), Hôpital Charles Nicolle [Rouen], Normandie Université (NU)-Normandie Université (NU), Université Blaise Pascal - Clermont-Ferrand 2 (UBP)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), THALES [France]-ALCATEL, and Université de Lyon-Université de Lyon-Université Jean Monnet - Saint-Étienne (UJM)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])
Subjects: Adult, Male, medicine.medical_specialty, Adolescent, [SDV]Life Sciences [q-bio], Administration, Oral, Beds, Dermatology, Administration, Cutaneous, Benzoates, Risk Assessment, Drug Administration Schedule, Cohort Studies, Scabies, Young Adult, 030207 dermatology & venereal diseases, 03 medical and health sciences, 0302 clinical medicine, Ivermectin, Pharmacotherapy, Risk Factors, Internal medicine, Animals, Humans, Medicine, Treatment Failure, Child, Decontamination, ComputingMilieux_MISCELLANEOUS, Antiparasitic Agents, business.industry, Incidence (epidemiology), Infant, Odds ratio, medicine.disease, Confidence interval, 3. Good health, Child, Preschool, Ambulatory, [SDV.IMM]Life Sciences [q-bio]/Immunology, Drug Therapy, Combination, Female, France, Sarcoptes scabiei, business, Cohort study, medicine.drug
Abstract: Background Treatment failure, which occurs in about one-third of cases, is considered as a major factor in the increasing incidence of scabies in developed countries. Objectives To identify predictors of treatment failure of scabies in ambulatory populations. Methods This multicentre study compared the clinical characteristics and treatment modalities between a group of patients with scabies treated successfully and another group who were not cured 3 months after antiscabies treatment. Results In total 210 patients with a diagnosis of scabies were included, comprising 98 patients in the treatment success group and 112 in the treatment failure group. The main risk factors for treatment failure were (i) the use of only one type of treatment, topical benzyl benzoate (BB) or oral ivermectin, vs. the combination of both treatments [odds ratio (OR) 2·15, 95% confidence interval (CI) 1·22-3·77]; (ii) the use of a single intake (vs. two) of oral ivermectin (OR 10·2. 95% CI 4·49-23·2); (iii) intake of ivermectin during a meal vs. on an empty stomach (OR 4·31, 95% CI 1·89-9·84); (iv) absence of decontamination of furnishings (OR 8·72, 95% CI 3·50-21·8), in particular sofa and cushions (OR 5·90, 95% CI 2·34-14·9), mattresses (OR 4·16, 95% CI 1·35-12·8) or car seats (OR 6·57, 95% CI 3·27-13·2) and (v) absence of written documents explaining treatment modalities (OR 5·18, 95% CI 2·57-10·4). In multivariate analysis, treatment failure was mainly associated with (i) use of a single intake (vs. two) of ivermectin (OR 6·62, 95% CI 2·71-16·2); (ii) use of BB alone vs. two intakes of ivermectin (OR 3·51, 95% CI 1·55-7·95) and (iii) absence of decontamination of furniture with acaricides (OR 5·81, 95% CI 1·96-16·7). Conclusions Use of topical BB alone and a single intake (vs. two) of ivermectin are predictors of treatment failure.
Published: 2019

43. GaSb-based solar cells for multi-junction integration on Si substrates

Author: Anthony Krier, Qi Lu, Peter J. Carrington, S. Soresi, Yvan Cuminal, Jean Decobert, Eric Tournié, S. Parola, A. Vauthelin, Julie Tournet, D. Montesdeoca Cardenes, Frédéric Martinez, Yves Rouillard, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Alcatel-Thalès III-V lab (III-V Lab), and THALES-ALCATEL
Subjects: Materials science, 02 engineering and technology, 010402 general chemistry, Epitaxy, 7. Clean energy, 01 natural sciences, law.invention, Lattice mismatch, law, Solar cell, ComputingMilieux_MISCELLANEOUS, Hybrid device, Renewable Energy, Sustainability and the Environment, business.industry, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, [SPI.TRON]Engineering Sciences [physics]/Electronics, Material quality, Simulated data, Optoelectronics, Cell structure, Dislocation, 0210 nano-technology, business
Abstract: We report on the first single-junction GaSb solar cell epitaxially grown on a Si substrate. A control stand-alone GaSb solar cell was primarily fabricated, which demonstrated a 5.90% efficiency (AM1.5G). The preparation, growth and manufacturing procedures were then adapted to create the GaSb-on-Si solar cell. The hybrid device resulted in a degraded efficiency for which comparison between experimental and simulated data revealed dominant non-radiative recombination processes. Material and electrical characterization also highlighted the impact of anti-phase domains and boundaries and threading dislocation density on the shunt resistance of the cell. Nevertheless, the GaSb-on-Si cell performance is close to recent results on the integration of GaSb solar cells on GaAs, despite a much larger lattice mismatch (12% vs 8%). Routes for improvement, concerning the material quality and cell structure, are proposed. This work lays the foundations of a GaSb-based multi-junction solar cell monolithically integrated on Si.
Published: 2019

44. Heteroepitaxial growth of silicon on GaAs via low-temperature plasma-enhanced chemical vapor deposition

Author: Nicolas Vaissiere, P. Roca i Cabarrocas, Jean Decobert, Ludovic Largeau, C. Lausecker, Gilles Patriarche, Gwenaëlle Hamon, José Alvarez, Jean-Luc Maurice, Jean-Paul Kleider, Wanghua Chen, Romain Cariou, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Total S.A. Renewables, Alcatel-Thales III-V Lab (III-V Lab), THALES, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-CentraleSupélec-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, SPIE PHOTONIC WEST, and SPIE Digital Library
Subjects: Materials science, Silicon, integration of silicon on III-V, Analytical chemistry, chemistry.chemical_element, low temperature plasma epitaxy, 02 engineering and technology, Substrate (electronics), Chemical vapor deposition, Epitaxy, 01 natural sciences, 7. Clean energy, [SPI.MAT]Engineering Sciences [physics]/Materials, Lattice constant, Plasma-enhanced chemical vapor deposition, 0103 physical sciences, Crystalline silicon, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, tetragonal silicon, 010302 applied physics, Plasma etching, [SPI.NRJ]Engineering Sciences [physics]/Electric power, [SPI.PLASMA]Engineering Sciences [physics]/Plasmas, 021001 nanoscience & nanotechnology, heteroepitaxy, charged clusters, chemistry, 0210 nano-technology
Abstract: International audience; We present an innovative approach for the growth of crystalline silicon on GaAs using plasma-enhanced chemical vapor deposition (PECVD). In this process the substrate is kept at low temperature (175 °C) and epitaxial growth is obtained via the impact of charged silicon clusters which are accelerated towards the substrate by the plasma-potential and melt upon impact. Therefore, this is a nanometer size epitaxial process where the local temperature (nm scale) rises above the melting temperature of silicon for extremely short times (in the range from ps to ns). This allows obtaining epitaxial growth even on relatively rough GaAs films, which have been cleaned in-situ using a SiF4 plasma etching. We present in-plane X-Ray Diffraction (XRD) measurements which are consistent with the hypothesis that the epitaxial growth happens at a local high temperature. Indeed, the tetragonal structure observed and the low in-plane lattice parameter determined from XRD can only be explained by the thermal mismatch induced by a high growth temperature. The effect of the plasma on the underlying GaAs properties, in particular the formation of hydrogen complexes with GaAs dopants (C, Si, Te) is studied in view of the integration of the c-Si epi-layers into devices
Published: 2019

45. A 5G mmWave Fiber-Wireless IFoF Analog Mobile Fronthaul Link With up to 24-Gb/s Multiband Wireless Capacity

Author: G. Giannoulis, Nikos Pleros, Helene Debregeas, Dimitrios Apostolopoulos, S. Papaioannou, Christos Vagionas, Konstantina Kanta, Hercules Avramopoulos, N. Argyris, George Kalfas, Christophe Caillaud, Nikolaos Iliadis, National Technical University of Athens [Athens] (NTUA), Mellanox Technologies [Sunnyvale], Aristotle University of Thessaloniki, Alcatel-Thales III-V Lab (III-V Lab), THALES, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, European Commission [761989], THALES [France], and THALES [France]-ALCATEL
Subjects: indoor measurements, business.industry, Computer science, Analog radio-over-fiber, Subcarrier multiplexing, Transmitter, 020206 networking & telecommunications, externally modulated laser, 02 engineering and technology, Remote radio head, Multiplexing, Atomic and Molecular Physics, and Optics, Subcarrier, [SPI]Engineering Sciences [physics], 020210 optoelectronics & photonics, M-QAM, Telecommunications link, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Baseband, digital subcarrier multiplexing, Wireless, business, mobile fronthaul, millimeter wave radio
Abstract: International audience; We experimentally demonstrate a multiband intermediate frequency-over-fiber/mmWave (IFoF/mmWave) fiber/wireless mobile fronthaul link for gigabit capacity over the unlicensed V-band (57-64 GHz). Digital synthesis of the multiband radio waveforms is performed at the baseband unit using digital subcarrier multiplexing technique, whereas digital predistortion is exploited to cope with the analog IFoF channel impairments without any further baseband processing at the digital-free remote radio head. Commercial optoelectronic components and analog V-band radio and antenna equipment for 7-km fiber and 5-m wireless transmission are employed to successfully demonstrate both uplink and downlink connectivity. An aggregate capacity up to 24 Gb/s was demonstrated with a 6-band 1 Gbaud 16-QAM on a 7.2-GHz analog bandwidth over the combined fiber/wireless channel showing error vector magnitude (EVM) values below the 3GPP requirements (
Published: 2019
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46. Building blocks of silicon photonics

Author: Vivien, Laurent, Baudot, Charles, Boeuf, Frederic, Szelag, Bertrand, Alonso-Ramos, Carlos, Benedikovic, Daniel, Marris-Morini, Delphine, Cassan, Eric, Guerber, Sylvain, Douix, Maurin, Virot, Léopold, Rodriguez, Philippe, Nemouchi, Fabrice, Jany, Christophe, Bakir, Badhise, Le Roux, Xavier, Perez-Galacho, Diego, Berciano, Mathias, Marcaud, Guillaume, Charlet, Ismael, Deniel, Lucas, Lafforgue, Christian, Zhang, Jianhao, Serna, Samuel, Damas, Pedro, Do, Phuong, Doser, Dorian, Durel, Jocelyn, Ghegin, Elodie, Vakarin, Vladyslav, Ramirez, Joan-Manel, Monfray, Stéphane, Cremer, Sébastien, Duran Valdeiglesias, Elena, Sanchez, Loic, Fournel, Franck, Brianceau, Pierre, Hassan, Karim, Benedikovic, Daniel, Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Crolles] (ST-CROLLES), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), and THALES-ALCATEL
Subjects: [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2019

47. Responsivity enhancement of double heterojunction bipolar transistors for wireless terahertz communication

Author: Diouf, I., BLIN, Stéphane, Pénarier, Annick, COQUILLAT, Dominique, Dyakonova, N., Nodjiadjim, V., Riet, M., Varani, L., Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Charles Coulomb (L2C), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, Alcatel-Thales III-V Lab (III-V Lab), and THALES
Subjects: ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract: International audience
Published: 2019

48. Corrigendum to 'Tritium retention in w plasma-facing materials: Impact of the material structure and helium irradiation' [Nucl. Mater. Energy 2019; 19: 403–410], Nuclear Materials and Energy, 22, 100729 (2020)

Author: Ryuichi Sakamoto, Hiroshi Yamada, Matt Thompson, S. Garcia-Argote, V. V. Burwitz, Nobuaki Yoshida, E. Autissier, Marie-France Barthe, Etienne Hodille, R.P. Doerner, Sabina Markelj, Grégory Pieters, F Ghiorghiu, Régis Bisson, Pierre Desgardin, Thomas Schwarz-Selinger, B. Rousseau, Cormac Corr, Christian Grisolia, E. Bernard, Arkadi Kreter, S. Feuillastre, Mykola Ialovega, STMicroelectronics [Crolles] (ST-CROLLES), National Institute for Fusion Science (NIFS), Helsingin yliopisto = Helsingfors universitet = University of Helsinki, Forschungszentrum Jülich GmbH | Centre de recherche de Juliers, Helmholtz-Gemeinschaft = Helmholtz Association, Conditions Extrêmes et Matériaux : Haute Température et Irradiation (CEMHTI), Université d'Orléans (UO)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Max-Planck-Institut für Plasmaphysik [Garching] (IPP), Institut de Chimie et Biochimie Moléculaires et Supramoléculaires (ICBMS), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Institut de Recherche sur la Fusion par confinement Magnétique (IRFM), Physique des interactions ioniques et moléculaires (PIIM), Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS), University of Canberra, University of California [San Diego] (UC San Diego), University of California (UC), Jozef Stefan Institute [Ljubljana] (IJS), Nastional Institute for Fusion Science (NIFS), NIFS, Kyushu University, Fondation A*Midex, ANR-11-IDEX-0001,Amidex,INITIATIVE D'EXCELLENCE AIX MARSEILLE UNIVERSITE(2011), European Project: 633053,H2020,EURATOM-Adhoc-2014-20,EUROfusion(2014), Materials Physics, Department of Physics, University of Helsinki, Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université d'Orléans (UO), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut de Chimie du CNRS (INC)-École Supérieure Chimie Physique Électronique de Lyon-Centre National de la Recherche Scientifique (CNRS), THALES-ALCATEL, University of California, and Kyushu University [Fukuoka]
Subjects: Tritium inventory, Nuclear and High Energy Physics, Tokamak, Materials science, Annealing (metallurgy), Materials Science (miscellaneous), Analytical chemistry, chemistry.chemical_element, Tungsten, Tritium, 01 natural sciences, 114 Physical sciences, Plasma-wall interactions, Helium, 010305 fluids & plasmas, law.invention, law, Desorption, 0103 physical sciences, FACILITY, Irradiation, 010302 applied physics, Liquid scintillation counting, lcsh:TK9001-9401, inventory, Nuclear Energy and Engineering, chemistry, 13. Climate action, lcsh:Nuclear engineering. Atomic power, [PHYS.PHYS.PHYS-CHEM-PH]Physics [physics]/Physics [physics]/Chemical Physics [physics.chem-ph], ddc:624
Abstract: This article has an erratum: DOI 10.1016/j.nme.2020.100729 Plasma-facing materials for next generation fusion devices, like ITER and DEMO, will be submitted to intense fluxes of light elements, notably He and H isotopes (HI). Our study focuses on tritium (T) retention on a wide range of W samples: first, different types of W materials were investigated to distinguish the impact of the pristine original structure on the retention, from W-coated samples to ITER-grade pure W samples submitted to various annealing and manufacturing procedures, along with monocrystalline W for reference. Then, He and He-D irradiated W samples were studied to investigate the impact on He-damages such as nano-bubbles (exposures in LHD or PSI-2) on T retention. We exposed all the samples to tritium gas-loading using a gentle technique preventing any introduction of new damage in the material. Tritium desorption is measured by Liquid Scintillation counting (LSC) at ambient and high temperatures (800 degrees C). The remaining T inventory is then measured by sample full dissolution and LSC. Results on T inventory on He exposed samples highlighted that in all cases, tritium desorption as a gas (HT) increases significantly due to the formation of He damages. Up to 1.8 times more T can be trapped in the material through a competition of various mechanisms, but the major part of the inventory desorbs at room temperature, and so will most likely not take part to the long-term trapped inventory for safety and operational perspectives. Unfortunately, investigation of "as received" industrial W (used for the making of plasma-facing materials) highlighted a strong impact of the pre existing defects on T retention: up to 2.5 times more T is trapped in "as received W" compared to annealed and polish W, and desorbs only at 800 degrees C, meaning ideal W material studies may underestimate T inventory for tokamak relevant conditions.
Published: 2019

49. Scalable Compact Modeling of III–V DHBTs: Prospective Figures of Merit Toward Terahertz Operation

Author: Chhandak Mukherjee, Akshay M. Arabhavi, Wei Quan, Mathieu Luisier, Bertrand Ardouin, Thomas Zimmer, Marina Deng, Christian Raya, Sebastien Fregonese, Colombo R. Bolognesi, Cristell Maneux, Muriel Riet, Virginie Nodjiadjim, Jean-Yves Dupuy, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), XMOD Technologies, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, and Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology [Zürich] (ETH Zürich)
Subjects: 010302 applied physics, Materials science, business.industry, Terahertz radiation, 020209 energy, Heterojunction bipolar transistor, Bipolar junction transistor, Transistor, Heterojunction, 02 engineering and technology, 01 natural sciences, Capacitance, Electronic, Optical and Magnetic Materials, law.invention, law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Figure of merit, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Scaling, ComputingMilieux_MISCELLANEOUS
Abstract: We investigate the bias, temperature, and frequency dependence of two III–V double heterojunction bipolar transistors technologies based on InGaAs/InP and GaAsSb/InP processes, using a HiCuM/L2 compact model-based multigeometry scalable parameter extraction methodology. Very good agreement between the model simulations and experimental data is demonstrated. Transistor currents and junction capacitances show very good scaling, thereby allowing the separation of intrinsic and peripheral effects. Prediction of future III–V HBT technologies figures-of-merit is performed by using the generated scalable model card.
Published: 2018

50. Narrow Linewidth InP/Si3N4 Laser for Lidar Applications

Author: Boust, Sylvain, Primiani, Peppino, Paret, Jean-François, Garreau, Antoine, Mekhazni, Karim, Fortin, Catherine, Provost, Jean-Guy, Fedeli, Jean-Marc, Duport, François, van Dijk, Frederic, Vallet, Marc, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES), and THALES-ALCATEL
Subjects: [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], ComputingMilieux_MISCELLANEOUS
Abstract: National audience
Published: 2018

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