Search

The larger current densities accompanying increased output of power modules are expected to degrade solder joints by electromigration. Although previous research has experimentally studied electromigration in solder, die-attach solder joints in Si-based power modules have not been studied because the average current density of the die-attach solder is much smaller than the threshold of electromigration degradation. However, in die-attach solder, the electromigration degradation may appear where current crowding occurs. This report describes electromigration analysis of die-attach solder joints for Si-based power modules using an electrical-thermal-stress-atomic coupled model. First, we validate our numerical implementation and show that it can reproduce the distributions of vacancy concentrations and hydrostatic stress almost the same as the analytical solutions even at current densities assuming current crowding. We then simulate the die-attach solder joint with an Si-based power device and a substrate. Due to current crowding, the current density at the edge of the solder exceeds the electromigration threshold. Unlike general electromigration phenomena, the vacancy concentration increases at the center and decreases at the edges of the solder joint, regardless of whether it is on the cathode side or anode side, due to the longitudinal driving force in the solder joint generated by the current crowding. Creep strain increased remarkably at the anode edge and the cathode center. The absolute vacancy concentration clearly increased with increasing current density and size ratio. Creep strain significantly increased with increasing current density, size ratio, and temperature.

Genetic modification to restore cell functions in the brain can be performed through the delivery of biomolecules in a minimally invasive manner into live neuronal cells within brain tissues. However, conventional nanoscale needles are too short (lengths of ~10 µm) to target neuronal cells in ~1-mm-thick brain tissues because the neuronal cells are located deep within the tissue. Here, we report the use of nanoscale-tipped wire (NTW) arrays with diameters 100 nm and wire lengths of ~200 µm to address biomolecule delivery issues. The NTW arrays were manufactured by growth of silicon microwire arrays and nanotip formation. This technique uses pinpoint, multiple-cell DNA injections in deep areas of brain tissues, enabling target cells to be marked by fluorescent protein (FP) expression vectors. This technique has potential for use for electrophysiological recordings and biological transfection into neuronal cells. Herein, simply pressing an NTW array delivers and expresses plasmid DNA in multiple-cultured cells and multiple-neuronal cells within a brain slice with reduced cell damage. Additionally, DNA transfection is demonstrated using brain cells ex vivo and in vivo. Moreover, knockdown of a critical clock gene after injecting a short hairpin RNA (shRNA) and a genome-editing vector demonstrates the potential to genetically alter the function of living brain cells, for example, pacemaker cells of the mammalian circadian rhythms. Overall, our NTW array injection technique enables genetic and functional modification of living cells in deep brain tissue areas, both ex vivo and in vivo.

Expansion of single Shockley stacking faults (SSFs) during forward current operation is an important issue, because it decreases the reliability of 4H-SiC bipolar devices. In this paper, we propose a method for analyzing SSF dynamics based on free energy under current conduction, temperature, and resolved shear stress conditions. The driving force for dislocation dissociation reactions and formation of SSFs is incorporated into the free energy function, including chemical potential, stacking fault energy, crystallographic energy, gradient energy and elastic strain energy. The net energy gain of the chemical potential was calculated as a function of temperature and current conduction through use of the a TCAD device simulator based on the Boltzmann equation, Poisson equation and the current continuity equation concerning electron and hole distributions with self-consistency. It was confirmed that SSF dynamics can be simulated by the proposed method. It was also found that SSF formation can be attributed to quantum well variation in which electrons in n-type 4H–SiC enter SSF-induced quantum well states to lower the energy of the dislocation system.

To understand the effects of temperature and injection current density on expansion of Shockley stacking faults (SSFs) from basal-plane dislocations in 4H-SiC p-i-n diodes, the threshold current density for SSF expansion was investigated at eight temperatures by electroluminescence image observation. The threshold injection current density was found to decrease at lower temperatures and to increase at higher temperatures. We identified the origin of this temperature dependence and found that the limiting factor for expansion differed depending on the temperature.

Single Shockley stacking faults (SSFs) expand from basal plane dislocations (BPDs) under forward current operation of 4H-SiC bipolar devices, giving rise to a reliability deterioration mode called “bipolar degradation”. Several groups have proposed models for the expansion of SSFs, in which the SSFs expand when electron-hole pair recombination takes place at BPDs. Maeda proposed a formulation of SSF expansion that includes stacking fault energy. However, the mechanisms by which mechanical stress affects the expansion of SSFs are unclear. In this paper, we evaluated the “expansion threshold current” of bar-shaped SSFs in a mechanical stress field using a p-i-n diode fabricated on 4H-SiC. To confirm the effect of mechanical stress on the threshold current for bar-shaped SSF expansion, a SiC-p-i-n diode was evaluated by the four-point bending method. Experimental results show that the threshold current of SSFs decreases or increases by more than 100 A/cm2 depending on the direction of the applied stress of SSFs. This result indicates that mechanical stress is an important factor for SiC bipolar device design.

We studied an advanced drift layer design which has an intermediate layer in mesa region for two-step-oxide field-plate MOSFET. The intermediate layer is formed by a high energy ion-implantation via source contact window. By TCAD simulation, it was confirmed the intermediate layer can decrease depletion layer capacitance in lower drain voltage. There was no change of breakdown voltage, and on-resistance (R ON A) increased slightly with increasing the implantation energy. An attractive effectiveness was obtained as gate-drain charge (Q GD ) decrease, and output charge and reverse recovery charge were slightly decreased. Evaluated performances showed that the Q GD and R ON Q GD were reduced by 14.1% and 10%, respectively. In power loss estimation of an assumed circuit, it was observed the newly designed FP-MOSFET can improve total power loss, especially in high-speed switching.

Power modules are being developed with the aim of increasing power output. Achieving this aim requires increased current density in power modules. However, at high current densities, power modules can degrade as a result of electromigration, which is a phenomenon where atoms move due to momentum transfer between conducting electrons and metal atoms. In addition, atoms are also moved by mechanical stress gradients and temperature gradients, so it is necessary to consider the combined effects of electrical, thermal, and mechanical stress. This report describes an electromigration analysis of solder joints for power modules. First, we validated our numerical implementation and showed that it could reproduce the distributions of vacancy concentrations and hydrostatic stress that were almost the same as those in previous studies. We then describe the effects of electromigration in a single solder joint. Due to the appearance of plastic and creep strains, the rate of increase in vacancy concentration was very slow and inelastic strain grew at an increasing rate. This result indicates that inelastic properties may strongly affect electromigration-induced degradation. Next, we present results for the solder joint with a SiC device and substrate. A current crowding appeared at the edge of the solder joint, and a vacancy concentration gradient was generated in not only the thickness direction but also the longitudinal direction. The absolute value of vacancy concentration increased significantly at the edge and did not reach a steady state even after a long time. These results indicate that peripheral components may strongly affect the electromigration-induced degradation. In addition, we modeled the behavior of metal atoms passing through the interface of the solder joint and simulated the growth of the intermetallic layer by electromigration.

Reducing the reverse recovery charge (Q rr) is effective for reducing switching loss in field plate (FP)-MOSFETs. A lifetime killer is utilized to reduce Q rr while increasing the leakage current in the off-state. Device simulation shows that a local lifetime killer on the cathode side successfully improves the trade-off between Q rr and I DSS in comparison with that of a uniform lifetime killer. A known issue of cathode lifetime killers is overshoot voltage by hard recovery. However, the overshoot voltage of FP-MOSFET decreases with a cathode lifetime killer owing to an internal snubber, which is a feature of FP-MOSFETs. An internal snubber with a large series resistance causes a dynamic avalanche by both the increase of FP potential and excess carriers in high-speed operation. The cathode lifetime killer also improves dynamic avalanche by excess carriers. Consequently, the cathode lifetime killer is preferable for high-speed FP-MOSFETs because the Q rr–I DSS trade-off and the trade-off between dynamic avalanche and I DSS are effectively improved.

Power semiconductors and modules are basic components of electrical infrastructure and are currently widely used in applications such as power conversion devices, industrial equipment, railways, and automobiles. Power modules are being developed with the aim of downsizing and increasing power output. With the larger current densities and higher operating temperatures associated with downsizing and increasing power output, degradation of power modules can occur as a result of electromigration. Electromigration is a phenomenon where atoms move due to the momentum transfer between conducting electrons and metal atoms. In addition, atoms are also moved by mechanical stress gradients and temperature gradients, so it is necessary to take into consideration the combined effects of electrical, thermal, and mechanical stress. In this report, we describe an electrical-thermal-mechanical coupled analysis of electromigration in a bonding wire of a power module. First, the analysis is validated under the condition that the displacement of the wire surface is fixed. The distributions of vacancy concentrations and hydrostatic stress are almost equal to those in previous studies. Next, we present the influences of current density, temperature, and the displacement constraint on electromigration in a wire with a simplified shape. The analysis results confirm that the plasticity and creep should be taken into consideration in a bonding wire. This also confirm that vacancy concentration increase more rapidly by changing the displacement of the wire surface from the fixed condition to the free condition. Finally, we present analysis results for a bonding wire with the actual shape found in power modules. In this wire, a local concentration peak appear in the electrode terminal. The analysis results reveal that electromigration may affect not only void formation but also other failure phenomena in the bonding wire of power modules.

Expansion of a single Shockley stacking fault (SSF) during forward-current operation decreases the reliability of 4H-SiC bipolar devices. We propose a practical method for analyzing the defect evolution of SSF expansion based on free energy according to current density, temperature, and resolved shear stress conditions. The free energy includes chemical potential and elastic strain energy. Specifically, the chemical potential is related to the driving force for the formation of SSFs by temperature and current, and the elastic strain energy corresponds to the driving force for dislocations that form SSFs under the applied stress. It was confirmed that the proposed multiphysics method could well simulate SSF evolution when stress and current were applied. Furthermore, the results suggest that quantum well action, in which electrons in n-type 4H-SiC enter SSF-induced quantum well states to lower the energy of the dislocation system, affects the driving force of SSF formation.

Intracellular recording nanoscale electrode devices provide the advantages of a high spatial resolution and high sensitivity. However, the length of nanowire/nanotube-based nanoelectrodes is currently limited to10 μm long due to fabrication issues for high-aspect-ratio nanoelectrodes. The concept reported here can address the technological limitations by fabricating100 μm long nanoscale-tipped electrodes, which show intracellular recording capability.

Bipolar degradation, which is caused by the expansion of stacking faults (SFs) during operation, has been a serious issue in 4H-SiC power devices. To evaluate the threshold minority carrier density of SF expansion, ρ th, Maeda et al. proposed a theoretical model based on quantum well action and dislocation theory. This model includes SF energy variations, electronic energy lowering due to carrier trapping, and resolved shear stress applied to partial dislocations, τ rss. Though the SF energy and the electric energy lowering were quantitatively established, the effect of τ rss has not been discussed well yet. In this study, we first conducted theoretical predictions of the effect of τ rss on ρ th. Then, based on our previous experiment on the dependence of threshold current density on mechanical external stress, we investigated the dependence of ρ th on τ rss. We conducted submodeling finite element analysis to obtain τ rss induced by both residual stress due to the fabrication process and experimentally applied external stress. Finally, we obtained ρ th at the origin of SF expansion from the experimentally measured threshold current density using device simulation. It was found that the dependence of ρ th on τ rss was almost linear. Its gradient was −0.04 ± 0.01 × 1016 cm−3/MPa, which well agrees with the theoretical prediction of −0.03 ± 0.02 × 1016 cm−3/MPa. Our study makes possible a comprehensive evaluation of the critical condition of bipolar degradation.

Silicon carbide (SiC) has attracted increasing attention as a material suitable for use with high breakdown voltages and at high temperatures. The effects of residual stress and thermal stress on the electrical properties are therefore a matter of growing concern. To analyze the effects, multi-physics simulation is required. The aim of this study is to present an evaluation method for SiC power modules by electro-thermal-stress coupled analysis. In this analysis, we investigate the relationship among mechanical stress, temperature, and electrical resistance in 4H-SiC MOSFET. To investigate the relationship, we used a four-point bending system that is capable of applying uniaxial stress to the SiC device. We prepared two kinds of test specimens with the uniaxial stress direction of four-point bending coinciding with the 〈112̄0〉 and 〈11̄00〉 direction of SiC. To associate the four-point bending load with the stress components in the SiC device, the four-point bending test was simulated by the finite element method. Tensile or compressive load was applied to two types of test specimens, and the internal stress of the SiC device was determined. To determine the internal stress during operation and mounting, the simple module model was also simulated by the structural analysis method. The internal stress was simulated from mounting temperature to the operating temperature. An electrical circuit and thermal circuit were constructed for the DC-DC converter in the above-described module for the coupled analysis method. The relationship among mechanical stress, temperature, and electrical resistance was incorporated into the additional resistance of the MOSFET in the electrical circuit. When an isotropic stress from −500 to 1400 MPa was applied with the SiC under the oxide film in the one parallel DC-DC converter, the change in the power conversion efficiency was about 0.16%. This indicates that our proposed method is a useful simulation method for SiC power modules.

Nanoscale geometric devices, which penetrate cells, offer numerous intracellular applications. DNA injection into a cell has potential to genetically alter the function of living brain cells. However, nanowire (or nanotube) — based conventional intracellular devices have been limited to cultured cells, due to the short wire length of

To investigate the mechanism of contraction/expansion behavior of Shockley stacking faults (SSFs) in 4H-SiC p–i–n diodes, the dependences of the SSF behavior on temperature and injection current density were investigated by electroluminescence image observation. We investigated the dependences of both triangle- and bar-shaped SSFs on the injection current density at four temperature levels. All SSFs in this study show similar temperature and injection current density dependences. We found that the expansion of SSFs at a high current density was converted to contraction at a certain value as the current decreased and that the value is temperature-dependent. It has been confirmed that SSF behavior, which was considered complex or peculiar, might be explained mainly by the energy change caused by SSFs.

Non invasive fractional flow reserve derived from CT coronary angiography (CT-FFR) has to date been typically performed using the principles of computational fluid analysis in which a lumped parameter coronary vascular bed model is assigned to represent the impedance of the downstream coronary vascular networks absent in the computational domain for each coronary outlet. This approach may have a number of limitations. It may not account for the impact of the myocardial contraction and relaxation during the cardiac cycle, patient-specific boundary conditions for coronary artery outlets and vessel stiffness. We have developed a novel approach based on 4D-CT image tracking (registration) and structural and fluid analysis based on one dimensional mechanical model, to address these issues. In our approach, we analyzed the deformation variation of vessels and the volume variation of vessels to better define boundary conditions and stiffness of vessels. We focused on the blood flow and vessel deformation of coronary arteries and aorta near coronary arteries in the diastolic cardiac phase from 70% to 100 %. The blood flow variation of coronary arteries relates to the deformation of vessels, such as expansion and contraction of the cross-sectional area, during this period where resistance is stable, pressure loss is approximately proportional to flow. We used a statistical estimation method based on a hierarchical Bayes model to integrate 4D-CT measurements and structural and fluid analysis data. Under these analysis conditions, we performed structural and fluid analysis to determine pressure, flow rate and CT-FFR. Furthermore, the reduced-order model based on fluid analysis was studied in order to shorten the computational time for 4D-CT-FFR analysis. The consistency of this method has been verified by a comparison of 4D-CT-FFR analysis results derived from five clinical 4D-CT datasets with invasive measurements of FFR. Additionally, phantom experiments of flexible tubes with and without stenosis using pulsating pumps, flow sensors and pressure sensors were performed. Our results show that the proposed 4D-CT-FFR analysis method has the potential to accurately estimate the effect of coronary artery stenosis on blood flow.Copyright © 2015 by ASME

Non invasive fractional flow reserve derived from CT coronary angiography (CT-FFR) has to date been typically performed using the principles of fluid analysis in which a lumped parameter coronary vascular bed model is assigned to represent the impedance of the downstream coronary vascular networks absent in the computational domain for each coronary outlet. This approach may have a number of limitations. It may not account for the impact of the myocardial contraction and relaxation during the cardiac cycle, patient-specific boundary conditions for coronary artery outlets and vessel stiffness. We have developed a novel approach based on 4D-CT image tracking (registration) and structural and fluid analysis, to address these issues. In our approach, we analyzed the deformation variation of vessels and the volume variation of vessels, primarily from 70% to 100% of cardiac phase, to better define boundary conditions and stiffness of vessels. We used a statistical estimation method based on a hierarchical Bayes model to integrate 4D-CT measurements and structural and fluid analysis data. Under these analysis conditions, we performed structural and fluid analysis to determine pressure, flow rate and CT-FFR. The consistency of this method has been verified by a comparison of 4D-CTFFR analysis results derived from five clinical 4D-CT datasets with invasive measurements of FFR. Additionally, phantom experiments of flexible tubes with/without stenosis using pulsating pumps, flow sensors and pressure sensors were performed. Our results show that the proposed 4D-CT-FFR analysis method has the potential to accurately estimate the effect of coronary artery stenosis on blood flow.

This paper reports a new lithography method using thin-film edge electrodes (TEEs) to collectively transfer nanopatterns by generating oxide on the substrate surface via an electrochemical reaction (ECR). Nanometric thick TEEs are formed on the sidewall of insulating stamping structures. ECR-based oxide patterns have the same width and shape as the TEEs because ECR is induced only between the conductor and the substrate. Oxide nanopatterns of 300 nm and 70 nm in width were collectively transferred on Si substrate in a millimeter-scale area.

Here we report integration of nanoscale tipped 120-μm-long vertical microprobe electrode (NTE) array and intracellular recordings using a gastrocnemius muscle of a mouse. The tip diameter and curvature radius of the NTE was

We demonstrated a multisite wide-area pinpoint depth transfers of nanoparticles into a soft material via three-dimensional (3D) nanotip probe arrays, for powerful applications including local drug delivery and DNA transfer into biological samples (e.g., cells/neurons and tissues). An array of electrically biased nanoscale tips of the probes enabled multisite traps of polystyrene nanoparticles. Here we demonstrate the multisite wide-area depth transfers of the trapped particles into a soft material of gelatin by simply penetrating the nanotip probe array as a “stamp” usage. These results suggest that the nanotip probe arrays should be applicable to trap numerous particles, including DNA/molecules attached nanoparticles, and realize multisite nanoinjections into biological samples, including tissues and individual cells/neurons.

Here we report vertical metal/silicon dioxide (SiO2) multiwalled microtube arrays as electrical and optical neuroprobes for “optogenetic”. Three-dimensional metal/SiO2-microtube arrays can be fabricated by vapor-liquid-solid (VLS) growth of silicon-wire, followed by the SiO2/metal depositions and the core-silicon etching. As the inside metal, we use iridium (Ir) with a low electrical electrolyte/electrode interfacial impedance in saline. An optical propagation through the Ir/SiO2-tube calculated by finite-difference time-domain (FDTD) method clearly indicates the effect of the inside Ir on the improved locality of light stimuli with the spot diameter of

We demonstrated batch, pinpoint, and multisite-transfer of nanoparticles via vertically-aligned nanotip silicon probe arrays for powerful applications of nanoinjectors, including local drug delivery and DNA transfer into biological samples (e.g., cell, neuron and tissue). Although several nanoinjections have been demonstrated using “nanoprobe” (e.g., glass pipette, silicon nanowire and carbon nanotube [1–3]), the common issues of these devices are the limitation of the probe number, short length and robustness of the probe section. In order to solve these issues, we propose a nanoinjector, based on a vertical nanotip probe array with a high aspect ratio. Here, we demonstrated electrical batch trappings of nanoparticles at positive biased nanotips, and the trapped nanoparticles were released by ultrasonic vibration. These preliminary results indicate the nanoparticle transfer capability of the nanotip probes for use in multisite deep nanoinjections on numerous biological samples.

In this paper, we present out-of-plane micro-scale diameter light guiding silicon dioxide tube arrays for use in optical stimulation of neurons. An optical propagation through the dioxide tube was calculated by using finite-difference time-domain (FDTD) simulation. Based on the calculated result, we designed and fabricated 3-µm-inner diameter 24-µm-height silicon dioxide tube arrays with the wall thickness of 0.5 µm, using selective vapor-liquid-solid (VLS) growth of silicon microwire, followed by microfabricating processes. The optical transmission capability of the fabricated tube was experimentally confirmed by using light of 470 nm, 525 nm, and 595 nm in wavelength.

We developed out-of-plane, high aspect ratio, nanoscale tip silicon microwire arrays for application to penetrating, multisite, nanoscale biological sensors. Silicon microwire arrays selectively grown by gold-catalyzed vapor-liquid-solid growth of silicon can be formed to create sharpened nanotips with a tip diameter of less than 100 nm by utilizing batch-processed silicon chemical etching for only 1-3 min. The tip angles achieved ranged from 11 degrees to 38 degrees. The nanotip silicon microwires can perform gelatin penetration without wire breakdown, indicating their potential penetrating capability for measurements inside biological tissues.

We developed integration and three-dimensional (3D)-fabrication techniques to nanoscale-tip silicon-microprobe arrays for multiple electrical nano-measurement systems with a high aspect ratio. Vapor-liquid-solid (VLS) grown vertically-aligned 120µm-length silicon microprobe arrays (2µm-diameter), each with nanoscale-tip by controlling the silicon-etching (less than 100-nm-diameter, radius of curvature 50nm), have been integrated with IC-processed interconnections. Subsequently, the nanotip silicon probe is entirely covered with Pt/Ti and encapsulated with an insulator, SiO 2 . In addition, herein we proposed the use of a spray-coating of photoresist and cycled etchings of the photoresist/SiO 2 at the probe-tips. Consequently, the nanotips can precisely be patterned and etched, resulting in the exposed Pt/Ti/silicon-nanotip with a controlled height of 2µm.

We developed a batch-fabrication of nanoscale-tip silicon microprobe arrays for use in multipoint nanoscale investigations of cell/neuron in-vivo/in-vitro. Sharpened tips, less than 100nm diameter, can be formed at the tips of out-of-plane three-dimensional silicon microprobe (length ≫10?m) arrays, by silicon wet etching-based batch-process within only 1-3min, providing precisely controlled tip angles ranging from 15° to 50°. The penetration capability of the nanoscale-tip microprobes was demonstrated, using finite element modeling (FEM) simulations and penetration tests with a gelatin as tissue/cell.