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Your search keyword '"A E Rogojin"' showing total 5 results
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5 results on '"A E Rogojin"'

1. Perspective Method of Betavoltaic Converter Creation

Author

V G Sidorov, A V Miakonkih, E T Lelekov, A E Rogojin, S V Bogdanov, P V Zelenkov, and Konstantin V. Rudenko

Subjects
Betavoltaics, Cryo process, p-i-n diode, Radiation, Materials science, Physics::Instrumentation and Detectors, Perspective (graphical), Scalloping, Condensed Matter Physics, Betavoltaic element, Plasma-immersion ion implantation, Physics::Plasma Physics, Systems engineering, General Materials Science
Abstract

Some results on planar diode structure creation by the method of a plasma-immersion ion implantation is presented in this paper. Obtained leakage current ~ 1 uA/cm2 at reverse voltage – 1 V. The cryogenic plasmochemical silicon etching process is developed, able to form the structured silicon layer with system of deep holes with high aspect ratio.

Published
2016

2. Planar betavoltaic converter creation with plasma-immersion ion implantation process*

Author

A V Miakonkih, A E Rogojin, V G Sidorov, S V Bogdanov, P V Zelenkov, and Konstantin V. Rudenko

Subjects
Betavoltaics, Materials science, business.industry, Analytical chemistry, 02 engineering and technology, 021001 nanoscience & nanotechnology, Plasma-immersion ion implantation, 020501 mining & metallurgy, Planar, Ion implantation, 0205 materials engineering, Optoelectronics, 0210 nano-technology, business, Planar diode, Voltage
Abstract

Some results on planar diode structure creation by the method of a plasma-immersion ion implantation is presented in this paper. Obtained leakage current ~ 1 uA/cm2 at reverse voltage -1 V.

Published
2016
Full Text
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3. Plasma chemical silicon etching process*

Author

Konstantin V. Rudenko, A V Miakonkih, I V Kovalev, A E Rogojin, V G Sidorov, and S V Bogdanov

Subjects
Plasma etching, Materials science, Silicon, Physics::Instrumentation and Detectors, Hybrid silicon laser, business.industry, Analytical chemistry, chemistry.chemical_element, Isotropic etching, chemistry, Etching (microfabrication), Deep reactive-ion etching, Optoelectronics, Dry etching, Reactive-ion etching, business
Abstract

The cryogenic plasma chemical silicon etching process is developed, able to form the structured silicon layer with system of deep holes with high aspect ratio.

Published
2016
Full Text
View/download PDF

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