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47 results on '"85.40.-e"'

1. Adaptive decision feedback equaliser based on sparse incremental least mean square/fourth approach.

Author

Kumari, Anjana, Barapatre, Yash Keju, Sahoo, Swetaleena, and Nanda, Sarita

Abstract

Channel equalisation performs a crucial role in practical wireless communication environment to reduce the consequence of intersymbol interference (ISI), noise and other channel distortions. Different adaptive signal processing algorithms tuned by multiple effective weight update mechanisms have been proposed and verified for designing the channel equaliser. In this paper, a sparse-based reweighted zero attracting incremental least mean square/fourth (ILMS/F) algorithm is anticipated to model an efficient adaptive decision feedback channel equaliser by taking the quadrature amplitude modulation (QAM)-modulated signal as transmitted signal which is passed through a nonlinear channel. The performance of the equaliser based on the proposed sparse-based ILMS/F has been analysed by using software and hardware platforms. The mean square error (MSE) table and bit error rate (BER) plots of the proposed algorithm have been compared with different conventional algorithms using MATLAB simulation and the hardware implementation of the proposed equaliser by using the FPGA platform has been evaluated in this paper. Moreover, the FPGA implementation of the proposed sparse incremental least mean square/fourth (ILMS/F) algorithm validates the robustness of the algorithm. [ABSTRACT FROM AUTHOR]

Published
2021
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2. Inhomogeneous dielectrics: conformal mapping and finite-element models

Author

Costamagna Eugenio and Barba Paolo Di

Subjects
inhomogeneous dielectrics, electrostatic field singularities, schwarz-christoffel, finite differences, finite elements, 02.60.-x, 02.70.-c, 41.20.-q, 84.40.-x, 85.40.-e, Physics, QC1-999
Abstract

Field singularities in electrostatic and magnetostatic fields require special attention in field calculations, and today finite element methods are normally used, both in homogeneous and in inhomogeneous dielectric cases. Conformal mappings are a traditional tool in the homogeneous case, but two-stage Schwarz-Christoffel + Finite Difference procedures have been proposed for a long time to solve problems in case of inhomogeneous dielectric materials too. This allowed to overcome accuracy problems caused by convex corners in the domain boundary and relevant field singularities, and to easily apply finite difference (FD) solvers in rectangular domains. In this paper, compound procedures Schwarz-Christoffel + Finite Elements Method procedures are suggested, to improve both the accuracy and the speed of second stage calculations. The results are compared to Schwarz-Christoffel + Finite Difference and to direct finite-element calculations, and the small differences analyzed considering a well know case study geometry, i.e., a shielded dielectric-supported stripline geometry.

Published
2017
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3. Photolithography-free Ge-Se based memristive arrays; materials characterization and device testing1.

Author

Latif, M.R., Csarnovics, I., Kökényesi, S., Csik, A., and Mitkova, M.

Subjects
*PHOTOLITHOGRAPHY, *GERMANIUM, *LITHOGRAPHY, *SEMIMETALS, *SURFACE roughness
Abstract

The focus of this work is on the formation of a lithography-free redox conductive bridge memristor array, comprised of different compositions of Ge xSe1− x chalcogenide glasses with the aim of selecting the chalcogenide material that provides the best performance. Various memristive arrays were fabricated on a metal-chalcogenide-metal stack. This structure offers high device density with the simplest configuration and allows access to each nano redox conductive bridge device. It was found that the device stability and threshold voltage were a function of the chalcogenide glass composition, with the Ge-rich film contributing to the best device performance, which is attributed to the formation of rigid structure and the availability of Ge-Ge bonds. Additionally, these parameters were dependent on the thickness and the surface roughness of the chalcogenide glass. Application of a nonlithography method for fabricating the array structure offered excellent yield, stable ON-OFF states and good uniformity. This demonstration, along with success achieved at the single cell level, suggests that the redox conductive bridge memristor is well positioned for ultrahigh performance memory and logic applications. [ABSTRACT FROM AUTHOR]

Published
2014
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4. Photolithography-free Ge-Se based memristive arrays; materials characterization and device testing1.

Author

Latif, M.R., Csarnovics, I., Kökényesi, S., Csik, A., and Mitkova, M.

Subjects
PHOTOLITHOGRAPHY, GERMANIUM, LITHOGRAPHY, SEMIMETALS, SURFACE roughness
Abstract

Copyright of Canadian Journal of Physics is the property of Canadian Science Publishing and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Published
2014
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5. Inhomogeneous dielectrics: conformal mapping and finite-element models

Author

Paolo Di Barba and Eugenio Costamagna

Subjects
010302 applied physics, Physics, inhomogeneous dielectrics, finite differences, QC1-999, 020208 electrical & electronic engineering, Mathematical analysis, Finite difference, electrostatic field singularities, General Physics and Astronomy, Conformal map, 02 engineering and technology, Dielectric, 01 natural sciences, 85.40.-e, Finite element method, schwarz-christoffel, 02.60.-x, 02.70.-c, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, finite elements, 41.20.-q, 84.40.-x
Abstract

Field singularities in electrostatic and magnetostatic fields require special attention in field calculations, and today finite element methods are normally used, both in homogeneous and in inhomogeneous dielectric cases. Conformal mappings are a traditional tool in the homogeneous case, but two-stage Schwarz-Christoffel + Finite Difference procedures have been proposed for a long time to solve problems in case of inhomogeneous dielectric materials too. This allowed to overcome accuracy problems caused by convex corners in the domain boundary and relevant field singularities, and to easily apply finite difference (FD) solvers in rectangular domains. In this paper, compound procedures Schwarz-Christoffel + Finite Elements Method procedures are suggested, to improve both the accuracy and the speed of second stage calculations. The results are compared to Schwarz-Christoffel + Finite Difference and to direct finite-element calculations, and the small differences analyzed considering a well know case study geometry, i.e., a shielded dielectric-supported stripline geometry.

Published
2017

8. Carbon Nanotube Integration with a CMOS Process

Author

Fabián Alejandro Buffa, Alfredo Boselli, Pablo D. Pareja Obregon, Daniel E. Resasco, Pedro Julian, Pablo S. Mandolesi, Alberto Lamagna, Betiana Lerner, and Maximiliano S. Pérez

Subjects
Engineering, Passivation, CMOS integration, Nanotechnology, Carbon nanotube, Hardware_PERFORMANCEANDRELIABILITY, lcsh:Chemical technology, Biochemistry, Article, Analytical Chemistry, law.invention, law, SWCNT, carbon nanotube sensor, Hardware_INTEGRATEDCIRCUITS, Deposition (phase transition), lcsh:TP1-1185, Electrical and Electronic Engineering, Instrumentation, PACS 85.35.-p, business.industry, microchip sensor, Chip, 85.40.-e, 85.35.Kt, Atomic and Molecular Physics, and Optics, CMOS, Electrode, Cmos process, business, Layer (electronics)
Abstract

This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture.

Published
2010

41. Small-area and compact CMOS emulator circuit for CMOS/nanoscale memristor co-design

Author

SangHak Shin, Seong-Ik Cho, Kyeong-Sik Min, and Jun-Myung Choi

Subjects
State variable, Materials science, 85.35.-p, Nanotechnology, Memristor, Hardware_PERFORMANCEANDRELIABILITY, Emulator circuit, law.invention, Materials Science(all), law, Hardware_INTEGRATEDCIRCUITS, CMOS emulator circuit, Memristors, Memristivebehavior, Nanoscale memristor memory, CMOS/nanoscale memristor co-design, General Materials Science, Electronic circuit, Nano Express, business.industry, Electrical engineering, Condensed Matter Physics, Memristive behavior, 85.40.-e, Circuit extraction, Capacitor, CMOS, Resistor, business, Voltage, Hardware_LOGICDESIGN
Abstract

In this paper, a CMOS emulator circuit that can reproduce nanoscale memristive behavior is proposed. The proposed emulator circuit can mimic the pinched hysteresis loops of nanoscale memristor memory's current-voltage relationship without using any resistor array, complicated circuit blocks, etc. that may occupy very large layout area. Instead of using a resistor array, other complicated circuit blocks, etc., the proposed emulator circuit can describe the nanoscale memristor's current-voltage relationship using a simple voltage-controlled resistor, where its resistance can be programmed by the stored voltage at the state variable capacitor. Comparing the layout area between the previous emulator circuit and the proposed one, the layout area of the proposed emulator circuit is estimated to be 32 times smaller than the previous emulator circuit. The proposed CMOS emulator circuit of nanoscale memristor memory will be very useful in developing hybrid circuits of CMOS/nanoscale memristor memory.

Published
2013

43. Development of a sampling ASIC for fast detector signals

Author

Breton, D., Delagnes, E., Frisch, H., Genat, J.-F., Grabas, H., Oberla, E., Varner, G., Electronique, Laboratoire de l'Accélérateur Linéaire (LAL), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), Institut de Recherches sur les lois Fondamentales de l'Univers (IRFU), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, and Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 85.40.-e
Abstract

International audience; In the context of the Large Area Picosecond Photodetector (LAPPD) pro ject the motivation to measure time-of-flight at the picosecond reso- lution has pushed towards a faster signal rise-time (below 100 ps) and a higher bandwidth output (higher than 1 GHz) detector, thus, leading to a new signal development and integrity studies of Micro-Channel Plates (MCP) photo-detectors. Similarly, the signal path, is being simulated and characterized, from the anodes to the input of the readout electronics, to minimise losses. Furthermore, to acquire the detector fast pulses a new 10 Gs/s high input bandwidth, 130 nm CMOS sampling chip is being de- veloped.

Published
2010
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44. Design and fabrication of a planar integrated micro-mass- spectrometer with a micro-channel-plate detector

Author

Wapelhorst, Eric and Müller, Jörg

Subjects
Microelectronics: LSI, VLSI, ULSI, integrated circuit fabrication technology (see also 85.45.-w Vacuum microelectronics) ... ... Microwave integrated electronics, see 84.40.Lj ... ... Integrated optics, see 42.82.-m ... ... Superconducting logic elements and memory devices, microelectronic circuits, see 85.25.Hv [85.40.-e], Micro System Technology, Massenspektrometrie, Micro Channel Plate, Mass Spectrometrie, Mikromechanik, SIS, MCP, Mikrokanalplatte, Sekundärelektronenvervielfacher, 85.40.-e:Microelectronics: LSI, VLSI, ULSI, microelectronic circuits, see 85.25.Hv, 85.40.-e, Mikrosystemtechnik, MEMS, Massenspektrometer, ddc:620
Abstract

Die genannte Arbeit beschreibt die Entwicklung eines Mikromassenspektrometers in Mikrosystemtechnik. Es werden alle Komponenten des Massenspektrometers planar auf einem 7 x 10 mm² großen Chip aus Glas und Silizium gefertigt. Diese Arbeit befasst sich im Schwerpunkt mit der Prozessentwicklung der für die Herstellung notwendigen Prozesse sowie mit dem Einsatz einer Mico-Channel-Plate (MCP) in einer selbstjustierenden Halterung, die aus Silizium geätzt wird., This work describes the development of a micro-mass-spectrometer with the methods of microsystem technologies. All components of the mass spectrometer are combined in a planar design of a 7 x 10 mm² chip fabricated out of glass and silicon. This work focuses on the development of the MEMS fabrication and on the operation of a micro-channel-plate (MCP) in a self-aligning fixture structured out of silicon.

Published
2010
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45. Design und Herstellung eines planar integrierten Mikromassenspektrometers mit Micro-Channel-Plate-Detektor

Author

Müller, Jörg, Wapelhorst, Eric, Müller, Jörg, and Wapelhorst, Eric

Abstract

Die genannte Arbeit beschreibt die Entwicklung eines Mikromassenspektrometers in Mikrosystemtechnik. Es werden alle Komponenten des Massenspektrometers planar auf einem 7 x 10 mm² großen Chip aus Glas und Silizium gefertigt. Diese Arbeit befasst sich im Schwerpunkt mit der Prozessentwicklung der für die Herstellung notwendigen Prozesse sowie mit dem Einsatz einer Mico-Channel-Plate (MCP) in einer selbstjustierenden Halterung, die aus Silizium geätzt wird., This work describes the development of a micro-mass-spectrometer with the methods of microsystem technologies. All components of the mass spectrometer are combined in a planar design of a 7 x 10 mm² chip fabricated out of glass and silicon. This work focuses on the development of the MEMS fabrication and on the operation of a micro-channel-plate (MCP) in a self-aligning fixture structured out of silicon.

Published
2010

46. The effect of highly ionising particles on the CMS silicon strip tracker

Author

R. van Staa, L. Perera, Pierre Juillot, A. Linn, V. Bellini, D. Coppage, Simon Kwan, Frank Raupach, Ch. Hörmann, D. Pandoulas, Roberto Dell'Orso, Salvatore My, D. Benedetti, J. P Dewulf, Andrea Candelori, B. De-Callatay, T. A. Bolton, P. Siegrist, Cecilia Elena Gerber, Mário Costa, T. Weiler, Marek Tasevsky, N. Lumb, Alessia Tricomi, K. Gabathuler, M. Nigro, Othmane Bouhali, R. Ranieri, Lutz Feld, C. Grab, Melody A. Swartz, Mika Huhtinen, Piero Giubilato, Tommaso Boccali, Jaakko Härkönen, Danek Kotlinski, Manfred Krammer, F. Defontaines, Salvatore Costa, M. Sani, A. Roy, Andrea Giammanco, Marc Weber, David Colling, Gordon H. Hanson, Benjamin Trocmé, Leonard Spiegel, Robert Klanner, R. Santinelli, M. Pernicka, A. Theel, B. Mangano, Laura Borrello, V. Roberfroid, B. Hegner, Thomas Bergauer, Stephane Perries, Costas Foudas, J. H. Wickens, S. Tkaczyk, Guido Tonelli, J.-M. Brom, Ghislain Grégoire, C. Vander-Velde, Giuseppe Zito, Ettore Focardi, D. Vintache, Raffaello D'Alessandro, B. Gobbi, G. Páztor, Daniel E. Hale, W. De Boer, W. Kahl, Timothy Koeth, Duccio Abbaneo, Karl Gill, A. Moggi, Donato Creanza, W. Braunschweig, Wolfram Erdmann, Wolfgang Waltenberger, J. Jones, J. Heyninck, M. Angarano, U. Holm, Giovanna Selvaggi, Wolfgang Adam, R. Goorens, Fabrizio Palla, T. Kress, F. Boegelspacher, B. A. Barnett, Alessandro Giassi, A. Marchioro, V. Radicci, M. Noy, Alessandra Romero, O. Zorba, Josef Hrubec, M. D’Alfonso, E. A. De Wolf, J. Lamb, Jean-Charles Fontaine, Denis Favart, D. Bisello, M. A. Kubantsev, T. Ten, S. Heier, R. Strub, Eva Halkiadakis, M.R. Pearson, Thomas Müller, G. Sguazzoni, Francois Vasey, A. Ostaptchouk, A. Schultz von Dratzig, N. De Filippis, E. Bartz, Michael Wlochal, A. Furgeri, Steve Schnetzer, Felicitas Pauss, Werner Lustermann, Andromachi Tsirou, Roland Horisberger, Waclaw Karpinski, Krzysztof Piotrzkowski, Paolo Azzurri, Bruno Wittmer, Lucia Silvestris, A. Onnela, S. Kyre, Matteo Risoldi, Alice Bean, Pascal Vanlaer, G. Schwering, Th. Hermanns, N. Dinu, L. Neuckermans, K. W. Bell, Frédéric Drouhin, Geoffrey Hall, L. Christofek, K. Hangarter, Didier Contardo, T. Ortega-Gomez, Umesh Joshi, Robert Stone, F. Charles, D. White, Paolo Petagna, A. Bocci, G. Pierschel, D. Kim, T. Franke, Marco Meschini, Gian Mario Bilei, G. Parrini, S. Kasselmann, C. M. Sutera, Oliver Pooth, N. Magini, N. W. Reay, M. Ageron, Kirill Prokofiev, Alain Ninane, W. Beaumont, U. Pein, A. Flossdorf, S. Korjenevski, M. Demarteau, Geng-Yuan Jeng, Eija Tuominen, Georg Steinbrück, R. N. Tilden, Arno Heister, N. Pukhaeva, S. Worm, Ulrich Goerlach, Claudio Campagnari, Teppo Mäenpää, B. Checcucci, Paolo Lariccia, Rudolf Fruehwirth, Barbara Clerbaux, Cristina Tuve, G. Maggi, R. Siedling, Cristina Biino, A. MacPherson, M. Duda, Gregory Iles, K. Freudenreich, H. Pruys, Gigi Rolandi, M. Bleyl, Andrea Rizzi, G. Segneri, Alan Garfinkel, P. Barrillon, Peter Schleper, A. Hocker, Vincent Lemaitre, Maiko Takahashi, G. Rogers, Marcello Mannelli, P. Blüm, F. Didierjean, J. Mnich, I. Troska, H.-Ch. Kästli, R. Halsall, M. Atac, S. König, A. K. Honma, Rino Castaldi, P. Gartung, R. Brauer, Paul Tipton, M. De Palma, Stefanos Dris, David Mark Raymond, Christophe Delaere, D. Michotte, J.D. Berst, Panja-Riina Luukka, R. L. Lander, Peter Robmann, Ph. Herquet, M. Loreti, B. Atz, Eric Chabanat, L. Gross, M. Frey, G. De Lentdecker, F. Ahmed, M. S. Mennea, F. Beissel, P. Steck, D. Ricci, Horst Breuker, D. A. Sanders, Tuure Tuuva, Cristiana Peroni, X. Rouby, G.W Liang, D. E. Pellett, Sandor Czellar, B. Perea-Solano, T. Speer, A. Basti, Flera Rizatdinova, Alexander Dierlamm, Tomas Lindén, Jacopo Bernardini, N. Bernardino-Rodriguez, Stefaan Tavernier, Paolo Spagnolo, Giacomo Bruno, Roberto Chierici, A. Kaminsky, Claude Amsler, R. Blaes, A. Macchiolo, M. Stoye, A. Dorokhov, Séverine Ovyn, Ricardo Eusebi, Ernesto Migliore, Hans-Jürgen Simonis, Carlo Civinini, S. De-Visscher, Livio Fanò, S. Mersi, P. Tempesta, R. Demina, C. Olivetto, N. Schirm, W. Bertl, J. P. Ernenwein, G. Leibenguth, R. Eichler, Attilio Santocchia, E. Carrone, S. Cucciarelli, Sebastiano Albergo, P. Vanhove, C. Y. Chien, Renato Potenza, A. Affolder, André Schöning, B. Reinhold, Maurizio Biasini, Simone Gennai, T. Barvich, S. Dutta, C. Zucchetti, Carsten Rott, M.J. French, M. Puscalau, Andreas Nowack, R. Taylor, Vitaliano Ciulli, J. L. Bonnet, C. Regenfus, M. Poettgens, P. Bartalini, D. Sentenac, R. Haroutunian, A. Khanov, G. Landi, Ariella Cattai, N. Estre, Simone Paoletti, E. Daubie, D. Rizzi, M. Thomas, V. Postolache, O. Van-der-Aa, Gino Bolla, Giuseppe Bagliesi, C. Yu, Massimiliano Chiorboli, Frank Hartmann, K. D. Boffin, Günter Flügge, P.P. Trapani, M. Vander-Donckt, Luigi Fiore, L. Servoli, Otilia Militaru, L. M. Cremaldi, Teimuraz Lomtadze, M. Eppard, Tommaso Dorigo, J. De-Favereau-de-Jeneret, L. Jones, Jorma Tuominiemi, Elizaveta Shabalina, Oliver Buchmuller, H. M. Katajisto, Th. Keutgen, N. R. Stanton, Ian R Tomalin, Riccardo Rando, G. Dirkes, Philip Baringer, John A Coughlan, Valery Zhukov, Sudhir Malik, Daniela Bortoletto, B. C. MacEvoy, F. Palmonari, Natale Demaria, Maria Teresa Brunetti, E. De Langhe, L. Van Lancker, E. Babucci, Vincenzo Chiochia, J. Leaver, S. Schael, G. Favro, Jorgen D'Hondt, J. P. Fernandez, Tilman Rohe, Lorenzo Foà, Joe Incandela, Veikko Karimäki, C. Kukulies, E. Grigoriev, J. Olzem, Domenico Giordano, Alberto Messineo, Laurent Mirabito, Steven Lowette, Robert Bainbridge, K. Wick, G. Magazzu, H. Postema, Markus Friedl, J. Doroshenko, R. Grabit, F. Raffaelli, Katja Klein, S. Assouak, H. Esser, F. Bosi, R. Adolphi, G. De Robertis, Alessandro Paccagnella, I. Boulogne, Nicola Bacchetta, Jonathan Fulcher, Tapio Lampén, A. Frey, M. Fahrer, Piero Giorgio Verdini, Abdenour Lounis, M. Giorgi, Giancarlo Mantovani, R. A. Sidwell, C. Maazouzi, C. Marchettini, S. Tesch, Institut de Physique Nucléaire de Lyon (IPNL), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3), Institut de Recherches Subatomiques (IReS), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Cancéropôle du Grand Est-Université Louis Pasteur - Strasbourg I-Centre National de la Recherche Scientifique (CNRS), CMS, Université Claude Bernard Lyon 1 (UCBL), and Université de Lyon-Université de Lyon-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Nuclear and High Energy Physics, Silicon, Physics::Instrumentation and Detectors, Hadron, APV25, chemistry.chemical_element, 01 natural sciences, Nuclear physics, Highly ionising particles, 0103 physical sciences, [PHYS.HEXP]Physics [physics]/High Energy Physics - Experiment [hep-ex], 07.50.-e, 07.89.+b, 29.40.Gx, 85.40.-e, Silicon strip tracker, Sensitivity (control systems), [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], 010306 general physics, Instrumentation, Compact Muon Solenoid, Physics, Large Hadron Collider, 010308 nuclear & particles physics, CMS, Detector, APV25, CMS, Highly ionising particles, Silicon strip tracker, Chip, Chemistry, chemistry, Engineering sciences. Technology, Beam (structure)
Abstract

Inelastic nuclear collisions of hadrons incident on silicon sensors can generate secondary highly ionising particles (HIPs) and deposit as much energy within the sensor bulk as several hundred minimum ionising particles. The large signals generated by these 'HIP events' can momentarily saturate the APV25 front-end readout chip for the silicon strip tracker (SST) sub-detector of the compact muon solenoid (CMS) experiment, resulting in deadtime in the detector readout system. This paper presents studies of this phenomenon through simulation, laboratory measurements and dedicated beam tests. A proposed change to a front-end component to reduce the APV25 sensitivity to HIP events is also examined. The results are used to infer the expected effect on the performance of the CMS SST at the future large hadron collider. The induced inefficiencies are at the percent level and will have a negligible effect on the physics performance of the SST. (c) 2005 Elsevier B.V. All rights reserved.

Published
2005
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47. Carbon nanotube integration with a CMOS process.

Author

Perez MS, Lerner B, Resasco DE, Pareja Obregon PD, Julian PM, Mandolesi PS, Buffa FA, Boselli A, and Lamagna A

Abstract

This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture.

Published
2010
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