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Carbon Nanotube Integration with a CMOS Process
- Source :
- Sensors, Vol 10, Iss 4, Pp 3857-3867 (2010), Sensors (Basel, Switzerland), Sensors, Volume 10, Issue 4, Pages 3857-3867
- Publication Year :
- 2010
- Publisher :
- MDPI AG, 2010.
-
Abstract
- This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture.
- Subjects :
- Engineering
Passivation
CMOS integration
Nanotechnology
Carbon nanotube
Hardware_PERFORMANCEANDRELIABILITY
lcsh:Chemical technology
Biochemistry
Article
Analytical Chemistry
law.invention
law
SWCNT
carbon nanotube sensor
Hardware_INTEGRATEDCIRCUITS
Deposition (phase transition)
lcsh:TP1-1185
Electrical and Electronic Engineering
Instrumentation
PACS 85.35.-p
business.industry
microchip sensor
Chip
85.40.-e
85.35.Kt
Atomic and Molecular Physics, and Optics
CMOS
Electrode
Cmos process
business
Layer (electronics)
Subjects
Details
- Language :
- English
- ISSN :
- 14248220
- Volume :
- 10
- Issue :
- 4
- Database :
- OpenAIRE
- Journal :
- Sensors
- Accession number :
- edsair.doi.dedup.....443c5bca4e451b0481602b0b93fd53a9