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Carbon Nanotube Integration with a CMOS Process

Authors :
Fabián Alejandro Buffa
Alfredo Boselli
Pablo D. Pareja Obregon
Daniel E. Resasco
Pedro Julian
Pablo S. Mandolesi
Alberto Lamagna
Betiana Lerner
Maximiliano S. Pérez
Source :
Sensors, Vol 10, Iss 4, Pp 3857-3867 (2010), Sensors (Basel, Switzerland), Sensors, Volume 10, Issue 4, Pages 3857-3867
Publication Year :
2010
Publisher :
MDPI AG, 2010.

Abstract

This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture.

Details

Language :
English
ISSN :
14248220
Volume :
10
Issue :
4
Database :
OpenAIRE
Journal :
Sensors
Accession number :
edsair.doi.dedup.....443c5bca4e451b0481602b0b93fd53a9