1. Strong Electron–Phonon Interaction in 2D Vertical Homovalent III–V Singularities
- Author
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Christophe Levallois, Jacky Even, Nicolas Bertru, Antoine Létoublon, Rozenn Piron, Alain Moréac, Olivier Durand, Lipin Chen, Thomas Schroeder, Mathieu Perrin, Rozenn Bernard, Yoan Léger, Charles Cornet, Julie Stervinou, Markus Andreas Schubert, Oliver Skibitzki, Laurent Pedesseau, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Innovations for High Performance Microelectronics (IHP), Institut de Physique de Rennes (IPR), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Leibniz-Institut für Kristallzüchtung (IKZ) (IKZ), Région Bretagne. China Scholarship Council (CSC) (No. 2017-6254). RENATECH (French Network of Major Technology Centers) within Nanorennes. SIR platform of ScanMAT at University of Rennes 1. HPC resources of TGCC/CINES/IDRIS under the allocation 2019-A0060906724 made by GENCI. Institut Universitaire de France., ANR-14-CE26-0014,ANTIPODE,Analyse approfondie de la nucléation III-V/Si pour les composants photoniques hautement intégrés(2014), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), and Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
Photoluminescence ,Materials science ,Phonon ,General Physics and Astronomy ,02 engineering and technology ,01 natural sciences ,symbols.namesake ,Condensed Matter::Materials Science ,Ab initio quantum chemistry methods ,0103 physical sciences ,General Materials Science ,010306 general physics ,Condensed matter physics ,business.industry ,General Engineering ,phonon confinement ,Heterojunction ,021001 nanoscience & nanotechnology ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,electron−phonon interaction ,Semiconductor ,Quantum dot ,2D vertical homovalent singularity ,carrier confinement ,symbols ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,Charge carrier ,III−V semiconductor ,0210 nano-technology ,Raman spectroscopy ,business - Abstract
International audience; Highly polar materials are usually preferred over weakly polar ones to study strong electron–phonon interactions and its fascinating properties. Here, we report on the achievement of simultaneous confinement of charge carriers and phonons at the vicinity of a 2D vertical homovalent singularity (antiphase boundary, APB) in an (In,Ga)P/SiGe/Si sample. The impact of the electron–phonon interaction on the photoluminescence processes is then clarified by combining transmission electron microscopy, X-ray diffraction, ab initio calculations, Raman spectroscopy, and photoluminescence experiments. 2D localization and layer group symmetry properties of homovalent electronic states and phonons are studied by first-principles methods, leading to the prediction of a type-II band alignment between the APB and the surrounding semiconductor matrix. A Huang–Rhys factor of 8 is finally experimentally determined for the APB emission line, underlining that a large and unusually strong electron–phonon coupling can be achieved by 2D vertical quantum confinement in an undoped III–V semiconductor. This work extends the concept of an electron–phonon interaction to 2D vertically buried III–V homovalent nano-objects and therefore provides different approaches for material designs, vertical carrier transport, heterostructure design on silicon, and device applications with weakly polar semiconductors.
- Published
- 2020