Back to Search
Start Over
Strong Electron-Phonon Interaction in 2D Vertical Homovalent III-V Singularities.
- Source :
-
ACS nano [ACS Nano] 2020 Oct 27; Vol. 14 (10), pp. 13127-13136. Date of Electronic Publication: 2020 Oct 01. - Publication Year :
- 2020
-
Abstract
- Highly polar materials are usually preferred over weakly polar ones to study strong electron-phonon interactions and its fascinating properties. Here, we report on the achievement of simultaneous confinement of charge carriers and phonons at the vicinity of a 2D vertical homovalent singularity (antiphase boundary, APB) in an (In,Ga)P/SiGe/Si sample. The impact of the electron-phonon interaction on the photoluminescence processes is then clarified by combining transmission electron microscopy, X-ray diffraction, ab initio calculations, Raman spectroscopy, and photoluminescence experiments. 2D localization and layer group symmetry properties of homovalent electronic states and phonons are studied by first-principles methods, leading to the prediction of a type-II band alignment between the APB and the surrounding semiconductor matrix. A Huang-Rhys factor of 8 is finally experimentally determined for the APB emission line, underlining that a large and unusually strong electron-phonon coupling can be achieved by 2D vertical quantum confinement in an undoped III-V semiconductor. This work extends the concept of an electron-phonon interaction to 2D vertically buried III-V homovalent nano-objects and therefore provides different approaches for material designs, vertical carrier transport, heterostructure design on silicon, and device applications with weakly polar semiconductors.
Details
- Language :
- English
- ISSN :
- 1936-086X
- Volume :
- 14
- Issue :
- 10
- Database :
- MEDLINE
- Journal :
- ACS nano
- Publication Type :
- Academic Journal
- Accession number :
- 32960037
- Full Text :
- https://doi.org/10.1021/acsnano.0c04702