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1. Bistable Memory Devices Based on Fullerenes Derivative Doped Resistive Memory Properties

Author

邓朝勇 Deng Chao-yong, 林 青 Lin Qing, 李静玉 Li Jing-yu, and 章 婷 Zhang Ting

Subjects
Radiation, Fullerene, Materials science, Bistability, business.industry, Doping, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Resistive random-access memory, chemistry.chemical_compound, chemistry, Optoelectronics, business, Derivative (chemistry)
Published
2018
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