Bistable Memory Devices Based on Fullerenes Derivative Doped Resistive Memory Properties

Authors :: 邓朝勇 Deng Chao-yong
林青 Lin Qing
李静玉 Li Jing-yu
章婷 Zhang Ting
Source :: Chinese Journal of Luminescence. 39:356-362
Publication Year :: 2018
Publisher :: Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 2018.

Subjects :: Radiation
Fullerene
Materials science
Bistability
business.industry
Doping
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Resistive random-access memory
chemistry.chemical_compound
chemistry
Optoelectronics
business
Derivative (chemistry)

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