401. High mobility solution-processed hybrid light emitting transistors
- Author
-
Gil Jo Chae, Shinuk Cho, Bright Walker, Ebinazar B. Namdas, Jung Hwa Seo, Mujeeb Ullah, Jin Young Kim, and Paul L. Burn
- Subjects
Conductive polymer ,Electron mobility ,Fabrication ,Materials science ,Physics and Astronomy (miscellaneous) ,business.industry ,Transistor ,Electron ,Cadmium sulfide ,law.invention ,chemistry.chemical_compound ,chemistry ,law ,Transport layer ,Optoelectronics ,Quantum efficiency ,business - Abstract
We report the design, fabrication, and characterization of high-performance, solution-processed hybrid (inorganic-organic) light emitting transistors (HLETs). The devices employ a high-mobility, solution-processed cadmium sulfide layer as the switching and transport layer, with a conjugated polymer Super Yellow as an emissive material in non-planar source/drain transistor geometry. We demonstrate HLETs with electron mobilities of up to 19.5 cm2/V s, current on/off ratios of >107, and external quantum efficiency of 10−2% at 2100 cd/m2. These combined optical and electrical performance exceed those reported to date for HLETs. Furthermore, we provide full analysis of charge injection, charge transport, and recombination mechanism of the HLETs. The high brightness coupled with a high on/off ratio and low-cost solution processing makes this type of hybrid device attractive from a manufacturing perspective.
- Published
- 2014
- Full Text
- View/download PDF