251. Proposed Planar-Type Amorphous-Silicon MOS Transistors
- Author
-
Yasutaka Uchida and Masakiyo Matsumura
- Subjects
Organic field-effect transistor ,Materials science ,business.industry ,Transistor ,Bipolar junction transistor ,General Engineering ,Induced high electron mobility transistor ,General Physics and Astronomy ,Nanotechnology ,Oxide thin-film transistor ,law.invention ,law ,Thin-film transistor ,Optoelectronics ,Field-effect transistor ,business ,Hot-carrier injection - Abstract
Novel planar-type amorphous-silicon metal-oxide-semiconductor transistors have been proposed and their features have been demonstrated. The gate insulator of silicon-dioxide grown inside the original amorphous-silicon layer makes transistor characteristics highly stable. The source and drain of micro-crystal silicon make the fabrication process simple and the parasitic elements small. The on-current of the prototype transistor was extrapolated to decrease to one-half of its initial value 1010 years after the application of dc bias. The on-off current ratio was about 106 and no voltage offset was observed. The field-effect mobility was 0.6 cm2/Vs.
- Published
- 1985