242 results on '"Hua, Mengyuan"'
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202. Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
203. Compatibility of AlN/SiNxPassivation With LPCVD-SiNxGate Dielectric in GaN-Based MIS-HEMT
204. Toward reliable MIS- and MOS-gate structures for GaN power devices
205. Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs
206. 650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric
207. O-3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors
208. Gate Leakage and Time-Dependent Dielectric Breakdown Characteristics of LPCVD-SiNx/AlGaN/GaN MIS-HEMTs
209. Low On-Resistance Normally-Off GaN Double-Channel Metal-Oxide-Semiconductor High-Electron-Mobility Transistor
210. GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric
211. Gate stack engineering for GaN lateral power transistors
212. Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess
213. Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor
214. Performance and VTH Stability in E-Mode GaN Fully Recessed MIS-FETs and Partially Recessed MIS-HEMTs With LPCVD-SiNx/PECVD-SiNx Gate Dielectric Stack.
215. Bias Temperature Instability of Normally‐Off GaN MIS‐FET with Low‐Pressure Chemical Vapor Deposition SiNx Gate Dielectric.
216. Dependence of V\text {TH} Stability on Gate-Bias Under Reverse-Bias Stress in E-mode GaN MIS-FET.
217. Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3.
218. Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs
219. 650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric
220. GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric
221. O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors
222. Dynamic R\mathrm {ON} of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination.
223. Formation and Applications in Electronic Devices of Lattice‐Aligned Gallium Oxynitride Nanolayer on Gallium Nitride (Adv. Mater. 12/2023).
224. Gate dielectric technology for high-performance GaN power MIS-HEMT and MIS-FET
225. Study on the Strategy of Green Buildings Development in China.
226. Decisive Role of the Defect-Clustering Effect in the Variation of Magnetic Order in Diluted Magnetic Binary Metal Oxides
227. Investigation of Electrical Contacts to p-Grid in SiC Power Devices Based on Charge Storage Effect and Dynamic Degradation.
228. Integration of LPCVD-SiNx Gate Dielectric with Recessed-gate E-mode GaN MIS-FETs: Toward High Performance, High Stability and Long TDDB Lifetime
229. Orientation-dependent atomic-scale mechanism and defect evolution in β-Ga2O3 thin film epitaxial growth.
230. Ab initio study of impact of nitridation at amorphous-SiNx/GaN interface
231. Bias Temperature Instability of Normally‐Off GaN MIS‐FET with Low‐Pressure Chemical Vapor Deposition SiNxGate Dielectric
232. Remote N2plasma treatment to deposit ultrathin high-kdielectric as tunneling contact layer for single-layer MoS2MOSFET
233. Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer.
234. The impact of buffer thickness upon the transport-limited buffer trapping effects in carbon-doped power GaN-on-Si devices.
235. Atomic-scale smoothing of semiconducting oxides via plasma-enabled atomic-scale reconstruction.
236. Two-Dimensional Gallium Oxide Monolayer for Gas-Sensing Application
237. Enhancement of vacancy diffusion by C and N interstitials in the equiatomic FeMnNiCoCr high entropy alloy.
238. Two-dimensional ferroelectric MoS 2 /Ga 2 O 3 heterogeneous bilayers with highly tunable photocatalytic and electrical properties.
239. Bridging the gap between atomically thin semiconductors and metal leads.
240. Two-Dimensional Gallium Oxide Monolayer for Gas-Sensing Application.
241. Tunable Properties of Novel Ga 2 O 3 Monolayer for Electronic and Optoelectronic Applications.
242. Enhanced dielectric deposition on single-layer MoS 2 with low damage using remote N 2 plasma treatment.
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