251. Investigation on the different barrier effect of Ni and Pt in the Ti/Al/Pt/Au and Ti/Al/Ni/Au contacts to n-type GaN
- Author
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Hu, C.Y., Ding, Z.B., Qin, Z.X., Chen, Z.Z., Xu, K., Wang, Y.J., Yang, Z.J., Yao, S.D., Shen, B., and Zhang, G.Y.
- Subjects
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OHMIC contacts , *SEMICONDUCTOR-metal boundaries , *SEMICONDUCTORS , *ELECTRIC contactors - Abstract
Abstract: The barrier effect of Pt and Ni has been investigated in the Ti/Al/Pt/Au and Ti/Al/Ni/Au Ohmic contacts to n-GaN, respectively. Severe indiffusion of Pt and Au has been found in the 800°C annealed Au/Pt/Al/Ti/n-GaN samples. However, Ni does not penetrate into the n-GaN and shows better barrier effect for preventing Au penetration into Au/Ni/Al/Ti/n-GaN samples. The reaction between Ga and Pt has also been identified in the samples annealed at 600°C. At the same time, the electrical degradation was found for the Ti/Al/Pt/Au samples aged at 600°C. However, no obvious degradation was found for the aged Ti/Al/Ni/Au samples. It is suggested that the reaction between Ga and Pt may cause the electrical degradation of the Ti/Al/Pt/Au metallization system. [Copyright &y& Elsevier]
- Published
- 2007
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