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Temperature dependent diffusion and epitaxial behavior of oxidized Au/Ni/p-GaN ohmic contact
- Source :
-
Materials Science & Engineering: B . Mar2006, Vol. 128 Issue 1-3, p37-43. 7p. - Publication Year :
- 2006
-
Abstract
- Abstract: The temperature dependent diffusion and epitaxial behavior of oxidized Au/Ni/p-GaN ohmic contact were studied with Rutherford backscattering spectroscopy/channeling (RBS/C) and synchrotron X-ray diffraction (XRD). It is found that the Au diffuses to the surface of p-GaN to form an epitaxial structure on p-GaN after annealing at 450°C. At the same time, the O diffuses to the metal–semiconductor interface and forms NiO. Both of them are suggested to be responsible for the sharp decrease in the specific contact resistance (ρ c) at 450°C. At 500°C, the epitaxial structure of Au develops further and the O also diffuses deeper into the interface. As a result, the ρ c reaches the lowest value at this temperature. However, when annealing temperature reaches 600°C, part or all of the interfacial NiO is detached from the p-GaN and diffuses out, which cause the ρ c to increase greatly. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 09215107
- Volume :
- 128
- Issue :
- 1-3
- Database :
- Academic Search Index
- Journal :
- Materials Science & Engineering: B
- Publication Type :
- Academic Journal
- Accession number :
- 19845166
- Full Text :
- https://doi.org/10.1016/j.mseb.2005.11.004