351. Atomic layer deposition of cobalt phosphate from cobaltocene, trimethylphosphate, and O2 plasma
- Author
-
Mariadriana Creatore, Wilhelmus M. M. Kessels, Valerio Di Palma, Harm C. M. Knoops, Plasma & Materials Processing, Interfaces in future energy technologies, Atomic scale processing, Processing of low-dimensional nanomaterials, EIRES, EIRES Chem. for Sustainable Energy Systems, and Center for Quantum Materials and Technology Eindhoven
- Subjects
Materials science ,010405 organic chemistry ,Inorganic chemistry ,chemistry.chemical_element ,Surfaces and Interfaces ,010402 general chemistry ,Condensed Matter Physics ,01 natural sciences ,0104 chemical sciences ,Surfaces, Coatings and Films ,Trimethyl phosphate ,Atomic layer deposition ,chemistry.chemical_compound ,chemistry ,Cyclopentadienyl complex ,Chemisorption ,Cobaltocene ,Thin film ,Cobalt ,Cobalt phosphate - Abstract
Electrodeposited cobalt phosphate has been reported in the literature as a robust alternative to noble metal-based electrocatalysts for the O2 evolution reaction. In parallel, atomic layer deposition (ALD) has been acknowledged as a key technology for the preparation of thin films for energy applications. With the present work, the authors have addressed the preparation of cobalt phosphate thin films by a plasma-assisted ALD process. The process developed consists of cobaltocene (step A) and trimethyl phosphate (step C) exposures alternated by O2 plasma (steps B and D) in an ABCD fashion. The process shows a linear growth with a growth per cycle of 1.12 ± 0.05 Å at 300 °C and no nucleation delay. The ALD saturation behavior has been demonstrated for each dosing step, and the process shows minimal inhomogeneity on 100 mm diameter wafers in terms of film thickness (
- Published
- 2020