383 results on '"Chang-Il Kim"'
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352. DIRECT MEASUREMENT OF WAVE FORCE ACTING ON A RUBBLE MOUND BREAKWATER IN HYDRAULIC EXPERIMENT.
353. Etching Characteristics of Manganese-Doped Zinc Sulfide Film Using Cl2/CF4 Inductively Coupled Plasma
354. A Novel Short-Term Load Forecasting Technique Using Wavelet Transform Analysis
355. Fuzzy Stability of the Generalized Version of Drygas Functional Equation.
356. Corrosion at the Grain Boundary and a Fluorine-Related Passivation Layer on Etched Al-Cu (1%) Alloy Surfaces
357. Hyers-Ulam Stability for a Class of Quadratic Functional Equations via a Typical Form.
358. Design of an 8-bit neuron MOSFET A/D converter using subranging method.
359. Dysphagia Following Stroke: Evaluation with Digital Radiography
360. Usefulness of MR Urography in the Diagnosis of Hydroureteronephrosis
361. A Study of the Surface Chemical Reactions on IGZO Thin Film in BCl3/Ar Inductively Coupled Plasma.
362. A Surface Properties of ZrO2 Thin Films Using Adaptively Coupled Plasma Source.
363. The Dry Etching Characteristics of HfAIO3 Thin Films in CF4/Cl2/Ar Inductively Coupled Plasma.
364. The Etching Properties of Al2O3 Thin Films in BCl3/Cl2/Ar Plasma.
365. Dry Etching of TaN Thin Films by Using an Inductively Coupled Plasma.
366. Dry Etching Mechanisms of ZrO2 Thin Films in BCl3/Cl2/Ar Plasma.
367. Improving the Etch Selectivity of ZrO2 Thin Films over Si by Using High Density Plasma.
368. Etching Properties of HfO2 Thin Films in Cl2/BCl3/Ar Plasma.
369. Etch Properties of Hf-Based High-k Dielectrics Using Inductively Coupled Plasma.
370. Etching Characteristics of (Na0.5K0.5)NbO3 Thin Films in an Inductively Coupled Cl2/Ar Plasma.
371. Dielectric Properties of (Pb,Sr)TiO3 Heterolayered Thin Films for Tunable Application.
372. Dielectric Properties of (Na, K)NbO3 Thin Films for Tunable Microwave Device Application.
373. Synthesis and purification of single-walled carbon nanotubes by methane decomposition over iron-supported catalysts.
374. Surface etching mechanism of Bi4-xLaxTi3O12 thin films using quadrupole mass spectroscopy.
375. Etching characteristics of LaNiO3 thin films in BCl3/Ar gas chemistry.
376. Effect of Cl2/Ar gas mixing ratio on (Pb,Sr)TiO3 thin film etching behavior in inductively coupled plasma.
377. Blocking Action of Nicardipine on α1-Adrenoceptors in Circulatory System of Rabbit
378. Vertical disparity correction of stereoscopic video using fast feature window matching.
379. Comparison of the electrical properties for etched and as-deposited BLT thin films.
380. The etching properties of SBT thin films in BC3/Cl2/Ar plasma.
381. Surface properties of ZrO2 thin film under Cl2/Ar plasma using angle-resolved X-ray photoelectron spectroscopy.
382. GOI properties of W-polycide formed by DCS processing.
383. A fluorine-related passivation layer on etched Al–Cu (1%) alloy surfaces on silicon after SF 6 plasma treatments
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