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294 results on '"Gargini, Paolo"'

252. Introduction.

Author

Ronse, Kurt G., Hendrickx, Eric, Naulleau, Patrick P., Gargini, Paolo A., and Toshiro Itani

Published
2018

278. Characterization of EBL2 EUV exposure facility

Author

Gargini, Paolo A., Naulleau, Patrick P., Ronse, Kurt G., Itani, Toshiro, te Sligte, Edwin, van Putten, Michel, Molkenboer, Freek T., van der Walle, Peter, Muilwijk, Pim M., Koster, Norbert B., Westerhout, Jeroen, Kerkhof, Peter J., Oostdijck, Bastiaan W., Mulckhuyse, Wouter, and Deutz, Alex F.

Published
2017
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288. 2003 ITRS Highlights.

Author

Gargini, Paolo A. and Doering, Robert R.

Subjects
*TECHNICAL manuals, *SEMICONDUCTORS, *SEMICONDUCTOR industry, *WEBSITES
Abstract

Features the 2003 edition of the reference document of the International Technology Roadmap for Semiconductors organization. Usability of the manual in various semiconductor firms; Availability of the manuals; Details on the Web site of the organization.

Published
2004

290. Post-Silicon Gate Possibilities.

Author

Gargini, Paolo

Subjects
SEMICONDUCTOR industry, METAL oxide semiconductors, RANDOM access memory, SEMICONDUCTORS
Abstract

Looks back on technological breakthroughs in the semiconductor industry from 1979 to 2004. Advances in lithography during the period; Challenges in the development of metal oxide semiconductors during the 1980s; Contributions of Intel Corp. in the development of random access memory.

Published
2004

291. Sustaining Moore’s Law with 3D Chips.

Author

DeBenedictis, Erik P., Badaroglu, Mustafa, Chen, An, Conte, Thomas M., and Gargini, Paolo

Subjects
*MOORE'S law, *FORECASTING technological innovation, *COMPUTER architecture, *INTEGRATED circuits, *SCALABILITY
Abstract

Rather than continue the expensive and time-consuming quest for transistor replacement, the authors argue that 3D chips coupled with new computer architectures can keep Moore’s law on its traditional scaling path. [ABSTRACT FROM PUBLISHER]

Published
2017
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292. Using resonant soft x-ray scattering to image patterns on undeveloped resists

Author

Freychet, G, Cordova, IA, McAfee, T, Kumar, D, Pandolfi, RJ, Anderson, C, Naulleau, P, Wang, C, Hexemer, A, Ronse, Kurt G, Gargini, Paolo A, Hendrickx, Eric, Naulleau, Patrick P, and Itani, Toshiro

Abstract

Extreme ultraviolet lithography is one of the most promising printing techniques for high volume semiconductor manufacturing at the 14 nm half-pitch device node and beyond. However, key challenges around EUV photoresist materials such as the exposure-dose sensitivity or the line-width roughness continue to impede the full adoption into industrial nanofab facilities. New metrology tools are required to address these challenges by helping to determine the impact of the EUV materials' properties and processing conditions on the roughness through the different step of the process. Here, we apply the resonant soft x-ray scattering (RSOXS) technique to gain insights into the structure of patterned EUV resists before the development step takes place. By using energies around the carbon absorption edge to take advantage of small differences in chemistry, the electronic density contrast between the exposed and unexposed regions of the resists could be enhanced in order to image the patterns with sub-nm precision. Critical-dimension grazing incidence small-angle X-ray scattering (CDGISAXS) was then performed at energies where the contrast was maximized, enabling the reconstruction of the 3D shape of the latent image. This demonstrates the potential of RSOXS to provide a high-resolution heightsensitive profile of patterned EUV resists, which will help to quantify the evolution of critical features, such as the line edge roughness, at each step of the nanofabrication process.

Published
2018

293. Lateral shearing interferometry for high-NA EUV wavefront metrology

Author

Zhu, Wenhua, Miyakawa, Ryan, Chen, Lei, Naulleau, Patrick, Ronse, Kurt G, Gargini, Paolo A, Hendrickx, Eric, Naulleau, Patrick P, and Itani, Toshiro

Subjects
Astrophysics::Instrumentation and Methods for Astrophysics
Abstract

We present a lateral shearing interferometer suitable for high-NA EUV wavefront metrology. In this interferometer, a geometric model is used to accurately characterize and predict systematic errors that come from performing interferometry at high NA. This interferometer is compatible with various optical geometries, including systems where the image plane is tilted with respect to the optical axis, as in the Berkeley MET5. Simulation results show that the systematic errors in tilted geometries can be reduced by aligning the shearing interferometer grating and detector parallel to the image plane. Subsequent residual errors can be removed by linear fitting.

Published
2018

294. Measurement of through-focus EUV pattern shifts using the SHARP actinic microscope

Author

Markus P. Benk, Ken Goldberg, Obert Wood, Jeremy McCord, Bryan S. Kasprowicz, Henry Kamberian, Pawitter Mangat, Wallow Thomas I, Yulu Chen, Gargini, Paolo A, Ronse, Kurt G, Naulleau, Patrick P, and Itani, Toshiro

Subjects
Dense array, Materials science, Microscope, business.industry, Extreme ultraviolet lithography, Bioengineering, law.invention, Optics, pattern shift, law, EUV, business, Focus (optics), 3D mask effects, rigorous 3D mask lithography simulation
Abstract

This paper provides experimental measurements of through-focus pattern shifts between contact holes in a dense array and a surrounding pattern of lines and spaces using the SHARP actinic microscope in Berkeley. Experimental values for pattern shift in EUV lithography due to 3D mask effects are extracted from SHARP microscope images and benchmarked with pattern shift values determined by rigorous simulations.

Published
2017
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