251. Photoluminescence of InAs quantum dots grown on disoriented GaAs substrates
- Author
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G. V. Astakhov, D. G. Vasil’ev, V. P. Kochereshko, I. V. Kudryashov, V. P. Evtikhiev, V. E. Tokranov, and G. V. Mikhailov
- Subjects
Photoluminescence ,Materials science ,Condensed matter physics ,business.industry ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,Spectral line ,Electronic, Optical and Magnetic Materials ,Magnetic field ,Condensed Matter::Materials Science ,Quantum dot ,Optoelectronics ,business ,Molecular beam epitaxy - Abstract
The photoluminescence spectra in an external magnetic field of an ensemble of InAs quantum dots grown by molecular beam epitaxy on a (001) GaAs substrate with a disorientation in the [010] direction are studied. A redistribution of the photoexcited carriers among different groups of dots under the influence of the magnetic field is observed. The concentration of quantum dots is determined by analyzing the data.
- Published
- 1999
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