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634 results on '"Reggiani, Lino"'

254. Multivalued distributions of hot electrons between equivalent valleys.

Author

Reggiani, Lino and Asche, Marion

Abstract

The MED among equivalent valleys treated in the present chapter was at the origin of a triple-valued dependence of the Sasaki field, theoretically predicted in 1962 by Reik and Risken [5.231 in n-Ge when the current density was oriented near a 110 direction for the limiting case of negligible intervalley scattering. However, these authors paid no attention to this effect, since it vanished for an appropriate choice of the scattering rate which provided better agreement between experimental and numerical results. The problem of the possible existence of multivalued transverse fields was theoretically considered in 1970 by Gribnikov et al. [5.3], and the first experimental indication with respect to this subject was reported in 1972 by Astrov and Kastalskii [5.29]. In the mean time, most of the interest was devoted to the similar problem of the transverse negative resistance [5.24-28]. These authors, recognizing the necessity of a strong intervalley repopulation rate, required in [5.3], performed measurements in Ge at low temperatures. By choosing the heating field along a 〈100〉 direction, they investigated the electric response in the

Published
1985
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257. HOT-CARRIER NOISE OF LIGHTLY DOPED p-Si AT 77 K.

Author

Kuhn, Tilmann, Reggiani, Lino, Varani, Luca, Gasquet, Daniel, Vaissiere, Jean Claude, and Nougier, Jean Pierre

Subjects
MONTE Carlo method, ELECTRONS, SCATTERING (Physics), QUANTUM dots, ELECTRIC fields
Published
1990

262. A Percolative Approach to Reliability of Thin Films.

Author

Pennetta, Cecilia and Reggiani, Lino

Subjects
*THIN films, *METALLIC films, *MONTE Carlo method, *SYSTEM failures
Abstract

Presents a theoretical study of the degradation toward failure of metallic and insulating thin films. Description of the failure of metallic interconnects and dielectric degradation; Procedure in using the Monte Carlo simulations; Results of the simulation.

Published
2000
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263. Bulk hot-electron properties of cubic semiconductors.

Author

Jacoboni, Carlo and Reggiani, Lino

Subjects
*SEMICONDUCTORS, *CHARGE transfer, *ELECTRIC fields
Abstract

This paper contains a review of charge transport properties at high electric fields in bulk cubic semiconductors. The microscopic theoretical interpretation follows a semi-classical approach and is based on the knowledge of the band structure and scattering mechanism of the material under investigation. For the solution of the Boltzmann equation, the Monte-Carlo simulation technique is considered, which provides and 'exact' numerical solution limited only by the simplifying assumptions inherent in the physical model assumed. Experimental techniques for the measurements of the most important transport quantities are briefly surveyed. Comparison between theory and experiment is reported for both electron and hole transport properties in Si, Ge and GaAs. These substances, besides being the best known materials, can in fact be considered as models for any other cubic semiconductor. [ABSTRACT FROM AUTHOR]

Published
1979
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264. Hole drift velocity in natural diamond

Author

REGGIANI, Lino, S. Bosi, C. Canali, F. Nava, S. F. Kozlov, Reggiani, Lino, S., Bosi, C., Canali, F., Nava, and S. F., Kozlov

Published
1981

270. ole drift velocity in silicon

Author

G. Ottaviani, C. Canali, F. Nava, A. Alberigi Quaranta, REGGIANI, Lino, G., Ottaviani, Reggiani, Lino, C., Canali, F., Nava, and A., Alberigi Quaranta

Published
1975

285. Monte Carlo algorithm for generation-recombination noise in semiconductors.

Author

Reggiani, Lino, Lugli, Paolo, and Mitin, Vladimir

Subjects
*MONTE Carlo method, *NOISE, *SEMICONDUCTORS
Abstract

We present an original Monte Carlo procedure to account for generation-recombination noise through impurity centers in semiconductors. Numerical calculations are specialized to the case of holes in Si at 77 K. Results are found to compare favorably with available experiments. [ABSTRACT FROM AUTHOR]

Published
1987
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286. Monte Carlo Analysis of Quantum Transport and Fluctuations in Semiconductor 2

Author

MODENA UNIV (ITALY), Jacoboni, Carlos, Reggiani, Lino, Lugli, Paulo, Brunetti, Rosella, MODENA UNIV (ITALY), Jacoboni, Carlos, Reggiani, Lino, Lugli, Paulo, and Brunetti, Rosella

Abstract

The first topic treated is quantum transport. Two major lines of research have been investigated: the first is based on the introduction of the joint spectral density into a traditional Monte Carlo simulation; the second regards the formulation of a fully quantum mechanical approach for electron transport based on the density matrix approach. The second deals with treats noise, diffusion, and autocorrelation functions both from a theoretical and a simulative point of view. Results have been obtained for both bulk systems and quantum wells. The third topic concerns with an analysis of the effect of phonon populations in excess with respect to their thermal equilibrium values. Numerical Monte Carlo simulations have been performed for both GaAs and GaAs- A1GaAs quantum wells. Keywords: Gallium arsenides; Aluminum gallium arsenides; Quantum wells.

Published
1988

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