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446 results on '"Haddad, G.I."'

255. Contributors, April 1970.

Author

Curtice, W.R., Fjerstad, R.L., Haddad, G.I., Hirota, R., Khandelwal, D.D., Krage, M.K., Landes, H.S., Manus, E.A., Paglione, R.W., Ramey, R.L., Siekanowicz, W.W., Suzuki, K., and Walsh, T.E.

Published
1970
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256. Contributors.

Author

Adair, J.E., Adams, J.W., Chestnut, P.C., Cohn, S.B., Green, R.B., Haddad, G.I., Jarvis, S., Johnson, A.K., Lewin, L., Pellegrin, J.-L., and Zysman, G.I.

Published
1969
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257. Contributors.

Author

Haddad, G.I., Oltman, G., Owyang, G.H., Rosenberg, D., Seshadri, S.R., Stock, D.J.R., Jean G. Van Bladel, and Van Doeren, R.E.

Published
1966
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258. Contributors.

Author

Cristal, E.G., Das, S.N., Degenford, J.E., Ellerbruch, D.A., Fontana, J.R., Haddad, G.I., Henschke, R.A., DeJager, J.T., Miller, D.J., Morris, L.C., Paxman, D.H., Riblet, H.J., Sirkis, M.D., and Steier, W.H.

Published
1964
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274. GaAs single-drift flat-profile IMPATT diodes for CW operation at D band

Author

Eisele, H. and Haddad, G.I.

Abstract

Single-drift flat-profile GaAs IMPATT diodes were designed for CW operation in the 140GHz range. The diodes were fabricated from MBE grown material, mounted on diamond heatsinks and tested in a radial line full height waveguide cavity. An RF output power of 15 mW with a corresponding DC to RF conversion efficiency of 1.5 % was obtained at 135.3 GHz

Published
1992

275. Negative differential resistance of GaAs/AlxGa1−xAs multiquantum well structures under high power photoexcitation: structure optimisation for an oscillator

Author

Goswami, S., Davis, L., Hong, S., Singh, J., Bhattacharya, P.K., and Haddad, G.I.

Abstract

A study is presented of the photocurrent behaviour of pin diodes having GaAs/AlxGa1−xAs MQW absorption regions for varying incident power, incident wavelength and barrier height, given by the Al fraction x. Optimum results for applications in high power oscillators are expected to be obtained for 0.1 < x < 0.2. The performance characteristics of optically controlled oscillators are estimated for a diode with MQW having Al0.15Ga0.85As barriers.

Published
1992

276. Ultrafast pipelined adders using RTTs

Author

Mohan, S., Mazumder, P., Mains, R.K., Sun, J.P., and Haddad, G.I.

Abstract

Ultrafast adders that perform 32 bit additions in less than 1 ns using resonant tunnelling transistors (RTTs) are proposed. Simulation results showing their subnanosecond performance are presented. The adders are shown to be better than others in terms of both area and speed. These results are obtained using true bistable logic which makes use of the bistability of circuits using the negative differential resistance (NDR) characteristic of the RTTs.

Published
1991

277. Recessed-gate InGaAs MESFETs with an AlAs etch-stop layer

Author

Liao, M.P., East, J.R., and Haddad, G.I.

Abstract

The authors have fabricated InGaAs MESFETs with a double selective gate recess process using a thin AlAs layer. Very low gate leakage is obtained since the gates are not in contact with the mesa sidewall. 1 µm × 100 µm InGaAs MESFETs exhibit a transconductance, fT and fmax of 215 mS/mm, 24 GHz, and 70 GHz, respectively.

Published
1995

278. D-band InP Gunn devices with second-harmonic power extraction up to 290 GHz

Author

Eisele, H. and Haddad, G.I.

Abstract

An InP Gunn device designed for fundamental-mode operation in D-band was mounted on a diamond heatsink for improved heat dissipation. The highest RF output power measured was 56 mW at 128 GHz and 49 mW at 132 GHz with DC-to-RF conversion efficiencies above 2%. Typical phase noise is well below –100 dBc/Hz at 500 kHz off the carrier. Devices tested in second-harmonic mode yielded more than 0.3 mW between 280 and 290 GHz.

Published
1994

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