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GaAs single-drift flat-profile IMPATT diodes for CW operation at D band
- Source :
- Electronics Letters; November 1992, Vol. 28 Issue: 23 p2176-2177, 2p
- Publication Year :
- 1992
-
Abstract
- Single-drift flat-profile GaAs IMPATT diodes were designed for CW operation in the 140GHz range. The diodes were fabricated from MBE grown material, mounted on diamond heatsinks and tested in a radial line full height waveguide cavity. An RF output power of 15 mW with a corresponding DC to RF conversion efficiency of 1.5 % was obtained at 135.3 GHz
Details
- Language :
- English
- ISSN :
- 00135194 and 1350911X
- Volume :
- 28
- Issue :
- 23
- Database :
- Supplemental Index
- Journal :
- Electronics Letters
- Publication Type :
- Periodical
- Accession number :
- ejs12149226