251. Metrology For Emerging Research Materials And Devices
- Author
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C. Michael Garner, Dan Herr, David G. Seiler, Alain C. Diebold, Robert McDonald, Rajinder P. Khosla, and Erik M. Secula
- Subjects
International Technology Roadmap for Semiconductors ,Materials science ,CMOS ,Semiconductor technology ,Nanotechnology ,Semiconductor device ,Integrated circuit design ,AND gate ,Microelectronic circuits ,Metrology - Abstract
The International Technology Roadmap for Semiconductors (ITRS) [1] identifies a number of potentially enabling device and materials technologies to extend and compliment CMOS. These emerging memory and logic devices employ alternate “states” including 1D charge state, molecular state, polarization, material phase, and spin. The improvement of these materials and devices depends on utilizing existing and new metrology methods to characterize their structure, composition and emerging critical properties at the nanometer scale. The metrology required to characterize nanomaterials, interfaces, and device structures will include existing structural metrology, such as TEM, SEM, and others, as well as metrology to characterize new “state” properties of the materials. The characterization of properties and correlations to nanostructure and composition are critical for these new devices and materials. Characterizing the properties of emerging logic technologies will be very difficult, as an applied stimulus is req...
- Published
- 2007