201. Improved Output Power of InGaN-Based Ultraviolet LEDs Using a Heavily Si-Doped GaN Insertion Layer Technique
- Author
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Ching Hsueh Chiu, Po-Min Tu, Hao-Chung Kuo, Zhen-Yu Li, Chien-Chung Lin, Jinchai Li, Hsiao-Wen Zan, Shing-Chung Wang, Tien-Chang Lu, Shih-Cheng Huang, Chia-Cheng Tu, Wu-Yih Uen, and Chun-Yen Chang
- Subjects
Materials science ,business.industry ,Wide-bandgap semiconductor ,Chemical vapor deposition ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,law.invention ,law ,Etching (microfabrication) ,Optoelectronics ,Quantum efficiency ,Metalorganic vapour phase epitaxy ,Electrical and Electronic Engineering ,Photolithography ,business ,Diode ,Light-emitting diode - Abstract
In this paper, a high quality ultraviolet light-emitting diodes (UV-LEDs) at 375 nm was developed using a heavy Si-doping technique with metal organic chemical vapor deposition. By using high-resolution X-ray diffraction, the full width at half-maximum of the rocking curve shows that the GaN film inserting a heavily Si-doped GaN layer (Si-HDL) had high crystalline quality. From the transmission electron microscopy image, the threading dislocation density was decreased after inserting a Si-HDL between undoped and n-doped GaN layers by nanoscale epitaxial lateral overgrowth. As a result, a much smaller reverse current and a higher light output were achieved. The improvement of light output at an injection current of 20 mA was enhanced by 40%. Therefore, we can use an in-situ nano pattern without complex photolithography and etching process and improve the internal quantum efficiency of UV-LEDs.
- Published
- 2012