1,285 results on '"Sakharov, A V"'
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202. Observation of geodesic acoustic modes in the Globus-M spherical Tokamak
203. Synthesis of an LED structure on the $$\left( {11\bar 20} \right)$$ and (0001) faces of mesa stripes grown by selective-area epitaxy
204. Formation of internal transport barriers in Globus-M tokamak in regime with early neutral heating beam switch-on
205. Experimental study of toroidal Alfvén modes in the Globus-M spherical tokamak
206. Classification of machine tools by function
207. Study of fast-ion losses in experiments on neutral beam injection on the Globus-M spherical tokamak
208. Observation of filaments on the globus-M tokamak by Doppler reflectometry
209. Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them
210. Binding of Affinity Ligand with a Three-Dimensional Target: The Role of Diffusion Limitations
211. Technology of Production of Recombinant Prourokinase
212. Study of tunneling transport of carriers in structures with an InGaN/GaN active region
213. The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes
214. Structural and optical properties of InAlN/GaN distributed Bragg reflectors
215. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices
216. Correction of the axial asymmetry of the poloidal magnetic field in the Globus-M spherical tokamak
217. Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes
218. Influence of the grain size and structural state of grain boundaries on the parameter of low-temperature and high-rate superplasticity of nanocrystalline and microcrystalline alloys
219. Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes
220. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes
221. Particle diagnostics of ion cyclotron resonance plasma heating in the Globus-M tokamak
222. Indium-rich island structures formed by in-situ nanomasking technology
223. Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers
224. Phase separation and nonradiative carrier recombination in active regions of light-emitting devices based on InGaN quantum dots in a GaN or AlGaN matrix
225. Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs
226. AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs
227. AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy
228. Fluoride glasses for multifunctional multifiber systems
229. Effect of excitation level on the optical properties of GaAs/AlGaO microdisks with an active region containing InAs quantum dots
230. Use of primary human fetal chondroblast culture for xenotransplantation into rat articular cartilage defect
231. Energy characteristics of excitons in structures based on InGaN alloys
232. Processing of High-Paraffinic vacuum residues by thermocatalytic methods to obtain bitumen
233. Dynamics of a point in the axisymmetric gravitational potential of a massive fixed ring and center
234. Analysis of the Effect of Impurities on Primary Recrystallization in Pure Metals.
235. Influence of Voltage Polarity on Electric Strength of Thin-Film Capacitors.
236. Investigation of the Effect of a Small Addition of ZrO2 on the Density and Growth of Grains of Fine-Grained Aluminum Oxide.
237. Investigation of the Microstructure of Fine-Grained YPO 4 :Gd Ceramics with Xenotime Structure after Xe Irradiation.
238. Spark Plasma Sintering of Al2O3–SiC Ceramics. Study of the Microstructure and Properties.
239. A method of technological identification of metal-cutting machine
240. The physiological reaction of Siberian hamsters (Phodopus sungorus, Cricetidae) to chemical signals of perspective mating partners before and during courtship
241. First Heat and Particles Transport Study in the Globus-M2 Spherical Tokamak with Neutral Beam Injection at the Current Ramp-Up
242. A Study of the Near-Wall Plasma of the Globus-M Tokamak Using an Array of Divertor Langmuir Probes
243. Study of plasma heating in discharges with neutral beam injection in the Globus-M spherical tokamak
244. Effect of hydrogen on anisotropy of the p-GaN growth rate in the case of side-wall MOCVD
245. Photoluminescence of localized excitons in InGan quantum dots
246. Single-lobe single-wavelength lasing in ultrabroad-area vertical-cavity surface-emitting lasers based on the integrated filter concept
247. The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots
248. Study of morphofunational peculiarities of fibroblasts isolated from human vertebral growth plates during in vitro culturing
249. Influence of doping profile of GaN: Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors
250. Electron temperature measurements at the Globus-M2 tokamak using multi-laser Thomson scattering
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