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204. Temperature-Dependent in SituStudies of Volatile Molecule Trapping in Low-Temperature-Activated Zr Alloy-Based Getters

210. Strain Nano-Engineering: SSOI as a Playground

229. Optical and Electronic Propreties of GeSn and GeSiSn Heterostructures and Nanowires

231. Thermal Behavior of the Mechanical Properties of GaN throughout Hydrogen-Induced Thin Layer Transfer

232. (Invited) Ion-Cut from Smart to Smarter: Ulrich Gösele's Impact on Science and Technology of Ultrathin Layer Transfer

233. Hydrogen Ion-Induced AlN Thin Layer Transfer: An Elastomechanical Study

234. Probing the Strain States in Nanopatterned Strained SOI

236. Extreme IR absorption in group IV-SiGeSn core-shell nanowires.

237. Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain.

238. Electronic Structure and Epitaxy of CdTe Shells on InSb Nanowires.

239. Ge–Ge0.92Sn0.08 core–shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication.

240. 1D photonic crystal direct bandgap GeSn-on-insulator laser.

241. Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn.

242. Reduction of thermal conductivity in nanowires by combined engineering of crystal phase and isotope disorder

243. Growth and defect investigation of high-purity germanium crystals for radiation detector applications

245. Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells

246. n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser

247. Electron state coupling in asymmetric Ge/SiGe quantum wells (Conference Presentation)

248. Stemless InSb nanowire networks and nanoflakes grown on InP.

249. Mid-infrared Imaging Using Strain-Relaxed Ge 1- x Sn x Alloys Grown on 20 nm Ge Nanowires.

250. Nuclear Spin-Depleted, Isotopically Enriched 70 Ge/ 28 Si 70 Ge Quantum Wells.

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