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201. Metal‐Organic Framework Based Gas Sensors.

Author

Yuan, Hongye, Li, Nanxi, Fan, Weidong, Cai, Hong, and Zhao, Dan

Subjects
*GAS detectors, *METAL-organic frameworks, *FIELD-effect transistors, *GAS leakage, *INDUSTRIAL gases, *AIR quality
Abstract

The ever‐increasing concerns over indoor/outdoor air quality, industrial gas leakage, food freshness, and medical diagnosis require miniaturized gas sensors with excellent sensitivity, selectivity, stability, low power consumption, cost‐effectiveness, and long lifetime. Metal‐organic frameworks (MOFs), featuring structural diversity, large specific surface area, controllable pore size/geometry, and host‐guest interactions, hold great promises for fabricating various MOF‐based devices for diverse applications including gas sensing. Tremendous progress has been made in the past decade on the fabrication of MOF‐based sensors with elevated sensitivity and selectivity toward various analytes due to their preconcentrating and molecule‐sieving effects. Although several reviews have recently summarized different aspects of this field, a comprehensive review focusing on MOF‐based gas sensors is absent. In this review, the latest advance of MOF‐based gas sensors relying on different transduction mechanisms, for example, chemiresistive, capacitive/impedimetric, field‐effect transistor or Kelvin probe‐based, mass‐sensitive, and optical ones are comprehensively summarized. The latest progress for making large‐area MOF films essential to the mass‐production of relevant gas sensors is also included. The structural and compositional features of MOFs are intentionally correlated with the sensing performance. Challenges and opportunities for the further development and practical applications of MOF‐based gas sensors are also given. [ABSTRACT FROM AUTHOR]

Published
2022
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202. Integrated CMOS-compatible Q-switched mode-locked lasers at 1900nm with an on-chip artificial saturable absorber

Author

Shtyrkova, Katia, Callahan, Patrick T., Li, Nanxi, Magden, Emir Salih, Ruocco, Alfonso, Vermeulen, Diedrik, Kärtner, Franz X., Watts, Michael R., and Ippen, Erich P.

Subjects
ddc:530
Abstract

Optics express 27(3), 3542 - 3556 (2019). doi:10.1364/OE.27.003542, We present a CMOS-compatible, Q-switched mode-locked integrated laser operating at 1.9 µm with a compact footprint of 23.6 × 0.6 × 0.78mm. The Q-switching rate is 720 kHz, the mode-locking rate is 1.2 GHz, and the optical bandwidth is 17nm, which is sufficient to support pulses as short as 215 fs. The laser is fabricated using a silicon nitride on silicon dioxide 300-mm wafer platform, with thulium-doped Al$_2$O$_3$ glass as a gain material deposited over the silicon photonics chip. An integrated Kerr-nonlinearity-based artificial saturable absorber is implemented in silicon nitride. A broadband (over 100 nm) dispersion-compensating grating in silicon nitride provides sufficient anomalous dispersion to compensate for the normal dispersion of the other laser components, enabling femtosecond-level pulses. The laser has no off-chip components with the exception of the optical pump, allowing for easy co-integration of numerous other photonic devices such as supercontinuum generation and frequency doublers which together potentially enable fully on-chip frequency comb generation., Published by OSA - The Optical Society, Washington, DC

Published
2019

203. Optical frequency synthesizer with an integrated erbium tunable laser

Author

Mağden, Emir Salih (ORCID 0000-0001-7680-6818 & YÖK ID 276368), Xin, Ming; Li, Nanxi; Singh, Neetesh; Ruocco, Alfonso; Su, Zhan; Notaros, Jelena; Vermeulen, Diedrik; Ippen, Erich P.; Watts, Michael R.; Kartner, Franz X., College of Engineering, Department of Electrical and Electronics Engineering, Mağden, Emir Salih (ORCID 0000-0001-7680-6818 & YÖK ID 276368), Xin, Ming; Li, Nanxi; Singh, Neetesh; Ruocco, Alfonso; Su, Zhan; Notaros, Jelena; Vermeulen, Diedrik; Ippen, Erich P.; Watts, Michael R.; Kartner, Franz X., College of Engineering, and Department of Electrical and Electronics Engineering

Abstract

Optical frequency synthesizers have widespread applications in optical spectroscopy, frequency metrology, and many other fields. However, their applicability is currently limited by size, cost, and power consumption. Silicon photonics technology, which is compatible with complementary-metal-oxide-semiconductor fabrication processes, provides a low-cost, compact size, lightweight, and low-power-consumption solution. In this work, we demonstrate an optical frequency synthesizer using a fully integrated silicon-based tunable laser. The synthesizer can be self-calibrated by tuning the repetition rate of the internal mode-locked laser. A 20 nm tuning range from 1544 to 1564 nm is achieved with ~10−13 frequency instability at 10 s averaging time. Its flexibility and fast reconfigurability are also demonstrated by fine tuning the synthesizer and generating arbitrary specified patterns over time-frequency coordinates. This work promotes the frequency stability of silicon-based integrated tunable lasers and paves the way toward chip-scale low-cost optical frequency synthesizers., Defense Advanced Research Projects Agency (DARPA), Direct On-Chip Digital Optical Synthesizer (DODOS) project; Deutsche Forschungsgemeinschaft through Priority Program; Deutsches Elektronen Synchrotron; National Science Scholarship (NSS) from the Agency for Science, Technology and Research (A*STAR)

Published
2019

204. Integrated CMOS-compatible Q-switched mode-locked lasers at 1900nm with an on-chip artificial saturable absorber

Author

Mağden, Emir Salih (ORCID 0000-0001-7680-6818 & YÖK ID 276368), Shtyrkova, Katia; Callahan, Patrick T.; Li, Nanxi; Ruocco, Alfonso; Vermeulen, Diedrik; Kaertner, Franz X.; Watts, Michael R.; Ippen, Erich P., College of Engineering, Department of Electrical and Electronics Engineering, Mağden, Emir Salih (ORCID 0000-0001-7680-6818 & YÖK ID 276368), Shtyrkova, Katia; Callahan, Patrick T.; Li, Nanxi; Ruocco, Alfonso; Vermeulen, Diedrik; Kaertner, Franz X.; Watts, Michael R.; Ippen, Erich P., College of Engineering, and Department of Electrical and Electronics Engineering

Abstract

We present a CMOS-compatible. Q-switched mode-locked integrated laser operating at 1.9 mu m with a compact footprint of 23.6 x 0.6 x 0.78mm. The Q-switching rate is 720 kHz, the mode-locking rate is 1.2 GHz, and the optical bandwidth is 17nm, which is sufficient to support pulses as short as 215 fs. The laser is fabricated using a silicon nitride on silicon dioxide 300-mm wafer platform, with thulium-doped Al2O3 glass as a gain material deposited over the silicon photonics chip. An integrated Kerr-nonlinearity-based artificial saturable absorber is implemented in silicon nitride. A broadband (over 100 nm) dispersion-compensating grating in silicon nitride provides sufficient anomalous dispersion to compensate for the normal dispersion of the other laser components, enabling femtosecond-level pulses. The laser has no off-chip components with the exception of the optical pump, allowing for easy co-integration of numerous other photonic devices such as supercontinuum generation and frequency doublers which together potentially enable fully on-chip frequency comb generation., DARPA DODOS; AFOSR; DESY -A Center of Helmholtzf Association; NDSEG fellowship; National Science Scholarship (NSS) from A*STAR

Published
2019

205. Si metasurface half-wave plates demonstrated on a 12-inch CMOS platform

Author

Dong, Yuan, primary, Xu, Zhengji, additional, Li, Nanxi, additional, Tong, Jinchao, additional, Fu, Yuan Hsing, additional, Zhou, Yanyan, additional, Hu, Ting, additional, Zhong, Qize, additional, Bliznetsov, Vladimir, additional, Zhu, Shiyang, additional, Lin, Qunying, additional, Zhang, Dao Hua, additional, Gu, Yuandong, additional, and Singh, Navab, additional

Published
2019
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208. Radiation Enhancement by Graphene Oxide on Microelectromechanical System Emitters for Highly Selective Gas Sensing

Author

Li, Nanxi, primary, Yuan, Hongye, additional, Xu, Linfang, additional, Tao, Jifang, additional, Ng, Doris Keh Ting, additional, Lee, Lennon Yao Ting, additional, Cheam, Daw Don, additional, Zeng, Yongquan, additional, Qiang, Bo, additional, Wang, Qijie, additional, Cai, Hong, additional, Singh, Navab, additional, and Zhao, Dan, additional

Published
2019
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211. 1550nm-Wavelength Metalens Demonstrated on 12-Inch Si CMOS Platform

Author

Bliznetsov, Vladimir, primary, Xu, Zhengji, additional, Zhong, Qize, additional, Zhu, Shiyang, additional, Dong, Yuan, additional, Fu, Yuan Hsing, additional, Hu, Ting, additional, Li, Dongdong, additional, Li, Nanxi, additional, Li, Yu, additional, Lin, Qun Ying, additional, and Singh, Navab, additional

Published
2019
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212. 1550nm-Wavelength Metalens Demonstrated on 12-Inch Si CMOS Platform

Author

Zhong, Qize, primary, Bliznetsov, Vladimir, additional, Lin, Qun Ying, additional, Singh, Navab, additional, Li, Yu, additional, Hu, Ting, additional, Dong, Yuan, additional, Xu, Zhengji, additional, Li, Dongdong, additional, Li, Nanxi, additional, Fu, Yuan Hsing, additional, and Zhu, Shiyang, additional

Published
2019
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214. CMOS-compatible all-Si metasurface polarizing bandpass filters on 12-inch wafers

Author

Xu, Zhengji, primary, Dong, Yuan, additional, Tseng, Chih-Kuo, additional, Hu, Ting, additional, Tong, Jinchao, additional, Zhong, Qize, additional, Li, Nanxi, additional, Sim, Larry, additional, Lai, Keng Heng, additional, Lin, Ying, additional, Li, Dongdong, additional, Li, Yu, additional, Bliznetsov, Vladimir, additional, Fu, Yuan-Hsing, additional, Zhu, Shiyang, additional, Lin, Qunying, additional, Zhang, Dao Hua, additional, Gu, Yuandong, additional, Singh, Navab, additional, and Kwong, Dim-Lee, additional

Published
2019
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215. Integrated Optical Phased Arrays: Architectures and Applications

Author

Notaros, Jelena, primary, Poulton, Christopher V., additional, Raval, Manan, additional, Notaros, Milica, additional, Li, Nanxi, additional, Byrd, Matthew J., additional, Su, Zhan, additional, Magden, Emir Salih, additional, Timurdogan, Erman, additional, and Watts, Michael R., additional

Published
2019
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219. Silicon photonics optical frequency synthesizer - SPOFS

Author

Singh, Neetesh, primary, Xin, Ming, additional, Li, Nanxi, additional, Vermeulen, Diedrik, additional, Ruocco, Alfonso, additional, Magden, Emir Salih, additional, Shtyrkova, Katia, additional, Callahan, Patrick T., additional, Ippen, Erich, additional, Kärtner, Franz X., additional, and Watts, Michael R., additional

Published
2019
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222. Transmissive silicon photonic dichroic filters with spectrally selective waveguides

Author

Mağden, Emir Salih (ORCID 0000-0001-7680-6818 & YÖK ID 276368), Li, Nanxi; Raval, Manan; Poulton, Christopher V.; Ruocco, Alfonso; Singh, Neetesh; Vermeulen, Diedrik; Ippen, Erich P.; Kolodziejski, Leslie A.; Watts, Michael R., College of Engineering, Department of Electrical and Electronics Engineering, Mağden, Emir Salih (ORCID 0000-0001-7680-6818 & YÖK ID 276368), Li, Nanxi; Raval, Manan; Poulton, Christopher V.; Ruocco, Alfonso; Singh, Neetesh; Vermeulen, Diedrik; Ippen, Erich P.; Kolodziejski, Leslie A.; Watts, Michael R., College of Engineering, and Department of Electrical and Electronics Engineering

Abstract

Many optical systems require broadband filters with sharp roll-offs for efficiently splitting or combining light across wide spectra. While free space dichroic filters can provide broadband selectivity, on-chip integration of these high-performance filters is crucial for the scalability of photonic applications in multi-octave interferometry, spectroscopy, and wideband wavelength-division multiplexing. Here we present the theory, design, and experimental characterization of integrated, transmissive, 1 x 2 port dichroic filters using spectrally selective waveguides. Mode evolution through adiabatic transitions in the demonstrated filters allows for single cutoff and flat-top responses with low insertion losses and octave-wide simulated bandwidths. Filters with cutoffs around 1550 and 2100 nm are fabricated on a silicon-on-insulator platform with standard complementary metal-oxide-semiconductor processes. A filter roll-off of 2.82 dB nm(-1) is achieved while maintaining ultra-broadband operation. This new class of nanophotonic dichroic filters can lead to new paradigms in on-chip communications, sensing, imaging, optical synthesis, and display applications., DARPA DODOS project; Agency of Science, Technology and Research (A*STAR), Singapore

Published
2018

223. Monolithically integrated erbium-doped tunable laser on a CMOS-compatible silicon photonics platform

Author

Mağden, Emir Salih (ORCID 0000-0001-7680-6818 & YÖK ID 276368), Li, Nanxi; Vermeulen, Diedrik; Su, Zhan; Xin, Ming; Singh, Neetesh; Ruocco, Alfonso; Notaros, Jelena; Poulton, Christopher V.; Timurdogan, Erman; Baiocco, Christopher; Watts, Michael R., College of Engineering, Department of Electrical and Electronics Engineering, Mağden, Emir Salih (ORCID 0000-0001-7680-6818 & YÖK ID 276368), Li, Nanxi; Vermeulen, Diedrik; Su, Zhan; Xin, Ming; Singh, Neetesh; Ruocco, Alfonso; Notaros, Jelena; Poulton, Christopher V.; Timurdogan, Erman; Baiocco, Christopher; Watts, Michael R., College of Engineering, and Department of Electrical and Electronics Engineering

Abstract

A tunable laser source is a crucial photonic component for many applications, such as spectroscopic measurements, wavelength division multiplexing (WDM), frequency-modulated light detection and ranging (LIDAR), and optical coherence tomography (OCT). In this article, we demonstrate the first monolithically integrated erbium-doped tunable laser on a complementary-metal-oxide-semiconductor (CMOS)-compatible silicon photonics platform. Erbium-doped Al2O3 sputtered on top is used as a gain medium to achieve lasing. The laser achieves a tunability from 1527 nm to 1573 nm, with a >40 dB side mode suppression ratio (SMSR). The wide tuning range (46 nm) is realized with a Vernier cavity, formed by two Si3N4 microring resonators. With 107 mW on-chip 980 nm pump power, up to 1.6 mW output lasing power is obtained with a 2.2% slope efficiency. The maximum output power is limited by pump power. Fine tuning of the laser wavelength is demonstrated by using the gain cavity phase shifter. Signal response times are measured to be around 200 mu s and 35 mu s for the heaters used to tune the Vernier rings and gain cavity longitudinal mode, respectively. The linewidth of the laser is 340 kHz. measured via a self-delay heterodyne detection method. Furthermore, the laser signal is stabilized by continuous locking to a mode-locked laser (MLL) over 4900 seconds with a measured peak-to-peak frequency deviation below 10 Hz., Defense Advanced Research Projects Agency (DARPA) Direct On-Chip Digital Optical Synthesizer (DODOS) project

Published
2018

224. Diffusion through fat crystal networks

Author

Li, Nanxi

Abstract

Oil migration in lipid-based multiphase food products is a concern in the food industry. It leads to defects in appearance, texture, and mouthfeel, which also shortens the shelf life of the food products. Thus, it is imperative to accurately characterize oil diffusion in multiphase systems to optimize product formulation and minimize adverse effects during production and storage. In order to study oil diffusion in fat crystal networks, oil diffusivity was measured using a Franz Cell diffusion test coupled with fluorescence spectroscopy using a fluorescent probe, Nile Red. Diffusivity was then correlated with the solid fat content (SFC), fractal dimensions of the fat crystal network, and micro-viscosity of the oil confined in the crystal networks. A set of binary triacylglycerol systems were prepared by mixing tricaprylin with 30 to 90 wt% tristearin (at 10% intervals), resulting in SFC ranging from 46 to 90% in the system. The diffusion tests were conducted by placing the binary mixture disks in thermostated Franz Cell chambers kept at 25℃. The diffusion of tricaprylin-Nile Red mixtures through the solid disks of the binary mixtures was monitored using a Jaz Spectrophotometer (Ocean Optics, Dunedin, FL) equipped with a fiber optic attachment and a high intensity LED light source (ex=505 nm). Measurements were taken at set intervals during a period of 120 hours. The fractal dimension of the fat crystal networks was determined using a box-counting method. Micro-viscosity of the liquid oil in the system was assessed based on the fluorescence intensity of a molecular rotor, Citrus red (CR) 2, embedded in the fat mixtures, which was monitored using fluorescent spectroscopy. The study provided an effective approach to measure the oil diffusion in fat-based networks. The developed technique is non-disruptive, highly-sensitive, inexpensive and allows real-time changes to be monitored. The results showed that the correlations between oil diffusivity and SFC, fractal dimension and micro-viscosity could all be divided into two regimes, characterized by linear models. The transition between the two linear regimes occurred at values corresponding to ~68% SFC, which indicated that microstructure parameters might have a greater impeding effect on oil diffusion at higher SFCs. These correlations showed that the three parameters were interrelated, while reflecting different characteristics of a fat crystal network, including diffusion rate, space-filling pattern of the network by crystals, and micro-environment confinement. Moreover, the relationships obtained from this study can provide theoretical evidence that it was possible to tailor oil migration in lipid systems by tweaking SFC, microstructural characteristics or micro-viscosity.

Published
2017
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225. Si metasurface half-wave plates demonstrated on a 12-inch CMOS platform.

Author

Dong, Yuan, Xu, Zhengji, Li, Nanxi, Tong, Jinchao, Fu, Yuan Hsing, Zhou, Yanyan, Hu, Ting, Zhong, Qize, Bliznetsov, Vladimir, Zhu, Shiyang, Lin, Qunying, Zhang, Dao Hua, Gu, Yuandong, and Singh, Navab

Subjects
OPTICAL retarders, COMPLEMENTARY metal oxide semiconductors, OPTICAL polarization, OPTICAL control, FINITE differences, NANOPHOTONICS
Abstract

Half-wave plate (HWP) is one of the key polarization controlling devices in optical systems. The conventional HWPs based on birefringent crystals are inherently bulky and difficult to be monolithically integrated with other optical components. In this work, metasurface-based HWPs with high compactness are demonstrated on a 12-inch silicon complementary metal-oxide-semiconductor platform. Three-dimensional finite difference time domain simulation is used to design the nanostructure and investigate the impact of fabrication process variation on the device performance. In addition, the cross- and co-polarization transmittance (Tcross and Tco) of the HWPs located at different wafer locations are characterized experimentally. The peak Tcross and valley Tco values of 0.69 ± 0.053 and 0.032 ± 0.005 are realized at the wavelength around 1.7 μm, respectively. This corresponds to a polarization conversion efficiency of 95.6% ± 0.8%. [ABSTRACT FROM AUTHOR]

Published
2020
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227. Frequency Domain Spectroscopy in Rare-Earth-Doped Gain Media

Author

Magden, Emir Salih, primary, Callahan, Patrick, additional, Li, Nanxi, additional, Bradley, Jonathan D. B., additional, Singh, Neetesh, additional, Ruocco, Alfonso, additional, Kolodziejski, Leslie A., additional, Ippen, Erich P., additional, and Watts, Michael R., additional

Published
2018
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229. Monolithically integrated erbium-doped tunable laser on a CMOS-compatible silicon photonics platform

Author

Li, Nanxi, primary, Vermeulen, Diedrik, additional, Su, Zhan, additional, Magden, Emir Salih, additional, Xin, Ming, additional, Singh, Neetesh, additional, Ruocco, Alfonso, additional, Notaros, Jelena, additional, Poulton, Christopher V., additional, Timurdogan, Erman, additional, Baiocco, Christopher, additional, and Watts, Michael R., additional

Published
2018
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230. Integrated rare-Earth doped mode-locked lasers on a CMOS platform

Author

Kärtner, Franz X., primary, Callahan, Patrick, primary, Shtyrkova, Katia, primary, Li, Nanxi, primary, Singh, Neetesh, primary, Xin, Ming, primary, Ravi, Koustuban, primary, Notaros, Jelena, primary, Magden, Sahli, primary, Vermeulen, Dietrik, primary, Ippen, Erich P., primary, and Watts, Michael, primary

Published
2018
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234. Ultra-narrow-linewidth erbium-doped lasers on a silicon photonics platform

Author

Li, Nanxi, primary, Singh, Neetesh, primary, Purnawirman, Purnawirman, primary, Magden, Emir, primary, Singh, Gurpreet, primary, Baldycheva, Anna, primary, Hosseini, Ehsan, primary, Sun, Jie, primary, Moresco, Michele, primary, Adam, Thomas, primary, Leake, Gerald, primary, Coolbaugh, Douglas, primary, Bradley, Jonathan, primary, and Watts, Michael, primary

Published
2018
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239. Monolithically Integrated Holmium Lasers on Silicon Chips

Author

Li, Nanxi, primary, Magden, E. Salih, additional, Su, Zhan, additional, Singh, Neetesh, additional, Ruocco, Alfonso, additional, Xin, Ming, additional, Byrd, Matthew, additional, Callahan, Patrick T., additional, Bradley, Jonathan D. B., additional, Vermeulen, Diedrik, additional, and Watts, Michael R., additional

Published
2018
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241. CMOS-Compatible Tunable Vernier Ring Laser using Erbium Doped Waveguide on a Silicon Photonics Platform

Author

Li, Nanxi, primary, Vermeulen, Diedrik, additional, Su, Zhan, additional, Magden, E. Salih, additional, Ruocco, Alfonso, additional, Singh, Neetesh, additional, Notaros, Jelena, additional, Xin, Ming, additional, Poulton, Christopher V., additional, Timurdogan, Erman, additional, Baiocco, Christopher, additional, and Watts, Michael R., additional

Published
2018
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244. Silicon-photonics-based optical frequency synthesizer

Author

Singh, Neetesh, primary, Xin, Ming, additional, Li, Nanxi, additional, Vermeulen, Diedrik, additional, Ruocco, Alfonso, additional, Magden, Emir Salih, additional, Shtyrkova, Katia, additional, Callahan, Patrick T., additional, Baiocco, Christopher, additional, Ippen, Erich, additional, Kärtner, Franz X., additional, and Watts, Michael R., additional

Published
2018
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247. Experimental investigation of a loop heat pipe with R245fa and R1234ze (E) as working fluids

Author

Xu, Guangming, Xie, Rongjian, Li, Nanxi, and Liu, Cheng

Abstract

Two kinds of new refrigerant-R1234ze (E) and R245fa were discussed as substitutes or supplements to traditional working fluids of loop heat pipes based on their favorable thermophysical properties and characteristics such as being safe and environmentally friendly. Thermal characteristics of a loop heat pipe with sintering copper wick at different charging ratios were experimentally investigated under variable heat loads. The results showed that the optimal charging ratio in the loop heat pipe range from 65% to 70%, and at this charging level, the R1234ze(E) system had better start-up response, while the R245fa system presented a stronger heat transfer capacity. The characteristic temperature of R1234ze(E) system was below 35 °C, and the corresponding thermal resistance was 0.08 K/W ~ 1.62 K/W under heat loads ranging from 5 W to 40 W. The thermal resistance of the R245fa system was 0.18 K/W ~ 0.91 K/W under heat loads of 10 W ~ 60 W, and the operating temperature was below 60 °C. The loop heat pipes charged with the proposed new refrigerants exhibit superb performance in room temperature applications, making them beneficial for enhancing the performance of electronics, and could provide a distinctive choice for the cooling of small-sized electronics especially.

Published
2021
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250. Octave-spanning coherent supercontinuum generation in silicon on insulator from 1.06 μm to beyond 2.4 μm

Author

Singh, Neetesh, primary, Xin, Ming, additional, Vermeulen, Diedrik, additional, Shtyrkova, Katia, additional, Li, Nanxi, additional, Callahan, Patrick T, additional, Magden, Emir Salih, additional, Ruocco, Alfonso, additional, Fahrenkopf, Nicholas, additional, Baiocco, Christopher, additional, Kuo, Bill P-P, additional, Radic, Stojan, additional, Ippen, Erich, additional, Kärtner, Franz X, additional, and Watts, Michael R, additional

Published
2017
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