201. Investigation on electrical stress over metal-insulator-metal (MIM) structures based on compound dielectrics for the inkjet-printed OTFT stability
- Author
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Kalyan Yoti Mitra, Christoph Sternkiker, Carme Martínez-Domingo, Reinhard R. Baumann, Eloi Ramon, Jordi Carrabina, and Enrico Sowade
- Subjects
Materials science ,Inkwell ,business.industry ,Transistor ,Electrical engineering ,High voltage ,General Medicine ,Metal-insulator-metal ,Dielectric ,law.invention ,Thin-film transistor ,law ,Printed electronics ,Optoelectronics ,business ,Layer (electronics) - Abstract
One of the greatest challenges in the field of printed electronics is the performance stability of the devices fabricated by the different printing technologies e.g. inkjet or gravure printing technology. The performance instability can be defined in terms of the device breakdown or by other effects like the emergence of leakage current under the constant high voltage inputs (especially the dielectric within the transistor architecture). The reasons behind this phenomenon can be various, but the most prominent indication can be detected from the materials used and the deposition methodology. For this purpose the herein work is presented, targeting on the all inkjet-printed organic thin film transistor (OTFT), but keeping the focus on the basic building block for fabricating inkjet-printed OTFTs. In this case it is the metal-insulator-metal (MIM) layer structure. Herein, the MIM structures are inkjet-printed, and then characterized optically and electrically. The dielectric layers for the MIM structures are printed using three different dielectric ink materials either individually 1) Single component system; or in combination with each other as in form of bi-layer stack 2) Multiple component system. The thickness of the printed dielectric layers is varied for these MIM structures. The electrical characterization is performed with respect to current vs. applied voltage and is done for a large number of iterations. The leakage current is of interest and shows a negative and positive trend towards the single component system and multiple component system for the dielectric layers in the MIM characterization structures respectively.