201. Proximity exchange induced gap opening and topological feature in graphene/1T′-MX2 (M = Mo,W; X = S,Se,Te) Dirac heterostructures
- Author
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Jingjing Wang, Changsheng Song, Ping Lin, Jiqing Wang, Wen Xiao, Jiaqi Pan, Chaorong Li, and Can Cui
- Subjects
Materials science ,Graphene ,Band gap ,Stacking ,Heterojunction ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Topology ,01 natural sciences ,law.invention ,law ,Topological insulator ,Lattice (order) ,0103 physical sciences ,General Materials Science ,010306 general physics ,0210 nano-technology ,Electronic band structure ,Anisotropy - Abstract
By using first-principles calculations, we demonstrate the influence of proximity effect on the band structures of heterostructures formed by graphene stacking on a two dimensional (2D) topological insulator (TI) 1T'-MX2. The interlayer distance d between graphene and TI decreases with the enhancement of the intrinsic lattice anisotropy of 1T'-MX2, which determines different strength of the interlayer proximity interaction. The bandgap can be opened by the proximity exchange. The weak anisotropic symmetry of heterostructure (large d) only results in a small band gap (∼50 meV) in graphene/MoTe2. However, a large energy gap (up to ∼200 meV) can be obtained in graphene/MoS2, which is attributed to the inter-intralayer charge transfer due to the strong proximity interaction of the hetero-interface (small d). In addition, the 1T'-MX2 of heterostructure still possesses the topological feature of Z 2 = 1, since the graphene has a negligible effect on the band structure of the system.
- Published
- 2018