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629 results on '"Gerardi, C."'

206. Determination of Mg concentration and distribution in MgxZn1-xO films for photonic devices application.

Author

Ferlito, E. P., Ricciari, R., Padalino, M., Grasso, S., Battaglia, A., Sciuto, M., Mello, D., Tapfer, L., and Gerardi, C.

Subjects
ZINC spectra, MAGNESIUM spectra, X-ray diffraction, AUGER electron spectroscopy, TIME-of-flight spectrometry, SOLAR cells
Abstract

Among the transparent conductor, one of the most interesting is the Al doped MgxZn1-xO films for their electrical properties that make it very attracting for solar cell application. In this work, the Mg distribution in Al doped MgxZn1-xO films was investigated in order to find a reliable methods to determine Mg distribution. In particular, X-ray diffraction, Auger electron spectroscopy and time of flight secondary ion mass spectrometry were used to characterize the film. Time of flight secondary ion mass spectrometry MCs+ results appear to be the most promising analytical technique. [ABSTRACT FROM AUTHOR]

Published
2014
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207. Degradation and hard breakdown transient of thin gate oxides in metal-SiO2-Si capacitors: dependance on oxide thickness

Author

Lombardo, S., La Magna, A., Spinella, C., Gerardi, C., and Crupi, F.

Subjects
Breakdown (Electricity) -- Research, Gates (Electronics) -- Research, Metal oxide semiconductor field effect transistors -- Research, Physics
Abstract

A new study investigates and reports the degradation and hard breakdown transient of thin gate oxides in metal-SiO2-Si capacitors.

Published
1999

226. Structural and optical studies of InxGa1−xAs/GaAs multiple quantum wells

Author

Di Dio, M., primary, Lomascolo, M., additional, Passaseo, A., additional, Gerardi, C., additional, Giannini, C., additional, Quirini, A., additional, Tapfer, L., additional, Giugno, P. V., additional, De Vittorio, M., additional, Greco, D., additional, Convertino, A. L., additional, Vasanelli, L., additional, Rinaldi, R., additional, and Cingolani, R., additional

Published
1996
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230. Laser-assisted controlled in-diffusion processes for preparation of optical waveguides and ultrashallow semiconductor junctions

Author

Dinescu, Maria, primary, Chitica, N., additional, Lita, Adriana, additional, Pantelica, D., additional, Bucur, B., additional, Ferrari, A., additional, Maiello, Gabriella, additional, Bertolotti, Mario, additional, Michailova, Galina, additional, Gerardi, C., additional, Giorgi, Rossella, additional, Dekonimos-Makris, T., additional, and Montecchi, Marco, additional

Published
1995
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240. Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS).

Author

Barbara De Salvo, Gerardi, C., van Schaijk, R., Lombardo, S.A., Corso, D., Plantamura, C., Serafino, S., Ammendola, G., van Duuren, M., Goarin, P., Mei, W.Y., van der Jeugd, K., Baron, T., Gely, M., Mur, P., and Deleonibus, S.

Abstract

In this paper, an overview of today's status and progress, as well as tomorrow's challenges and trends, in the field of advanced nonvolatile memories based on discrete traps is given. In particular, unique features of silicon nanocrystal and SONOS memories will be illustrated through original recent data. The main potentials and main issues of these technologies as candidates to push further the scaling limits of conventional floating-gate Flash devices will be evaluated. [ABSTRACT FROM PUBLISHER]

Published
2004
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246. Room-temperature single-electron effects in silicon nanocrystal memories.

Author

Pace, C., Crupi, F., Lombardo, S., Gerardi, C., and Cocorullo, G.

Subjects
ELECTRON emission, SILICON, CRYSTALS, NANOPARTICLES, ELECTRON capture, NUCLEAR physics
Abstract

In this work, we present an experimental study on the single-electron effects observed at room temperature in silicon nanocrystal memories. The electrical characterization has been performed by means of a purposely designed low noise high bandwidth measurement system. Relevant statistical properties of the threshold voltage shifts induced by single-electron trapping and detrapping in the silicon dots are reported. The kinetics of electron capture and emission is also discussed. [ABSTRACT FROM AUTHOR]

Published
2005
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247. Thermal and electrostatic stability of biexcitons in Zn 1− x Cd x Se/ZnSe quantum wells

Author

Calcagnile, L., Lomascolo, M., Gerardi, C., Coli', G., Cingolani, R., Sorba, L., Vanzetti, L., and Franciosi, A.

Abstract

We investigated the density and temperature dependence of biexciton recombination in Zn 1− x Cd x Se/ZnSe quantum wells grown by molecular beam epitaxy. Modulation-doped structures allowed us to investigate the electrostatic stability of biexcitons in the presence of a precise concentration of free carriers. Doping was introduced in the central part of the barrier up to a doping concentration of 3.4 × 10 cm. The comparison between the two sets of samples allowed us to clarify the role of each elementary excitation as far as lasing is concerned. Although the biexciton binding energy in our undoped samples was sufficiently higher than in III-V materials, biexcitons are not stable at temperatures greater than 50 K. Moreover, the electrostatic screening and many-body effects caused by free-carriers decrease the biexciton binding energy so that biexcitons are not observed in modulation-doped samples. We found that the vicinity of the stimulated emission line at threshold with the peak of biexcitonic recombination, is not a sufficient criterion to conclude that lasing is biexcitonic in origin.

Published
1998
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248. Lasing and dynamics of photoexcited carriers in graded-index separate confinement Zn 1− x Cd x Se single quantum wells

Author

Calcagnile, L., Alfeo, G., Lomascolo, M., Cingolani, R., Gerardi, C., Sorba, L., Vanzetti, L., and Franciosi, A.

Abstract

In this work we investigated the optical properties and lasing in graded-index separate confinement Zn 1− x Cd x Se/ZnSe heterostructures on In 1− x Ga x As (1 0 0) substrate. The carrier dynamics in the confining graded barriers and the single quantum well are investigated by using time-resolved photoluminescence measurements. Our measurements show the filling of quantum well states and depopulation of barrier states in about ≈ 25 ps. Moreover, we observed the reduction of the decay time of the photoluminescence as the excitation intensity was varied from below to above the threshold for lasing. Lasing threshold in these structures was found to be reduced by about one order of magnitude with respect to samples without graded-index profile. The threshold for lasing was in the range from ≈ 1 to 145 kW/cm when the sample temperature was varied from 10 to 300 K. In short cavities, at temperatures higher than 150 K a transition from the first to the second quantized state was observed.

Published
1998
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