Degradation and hard breakdown transient of thin gate oxides in metal-SiO2-Si capacitors: dependance on oxide thickness

Authors :: Lombardo, S.
La Magna, A.
Spinella, C.
Gerardi, C.
Crupi, F.
Source :: Journal of Applied Physics. Dec 1, 1999, Vol. 86 Issue 11, p6382, 1 p.
Publication Year :: 1999
Abstract: A new study investigates and reports the degradation and hard breakdown transient of thin gate oxides in metal-SiO2-Si capacitors.

Subjects :: Breakdown (Electricity) -- Research
Gates (Electronics) -- Research
Metal oxide semiconductor field effect transistors -- Research
Physics

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