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Incorporating tailored nanostructures into solar cells is a promising way to improve their photovoltaic conversion efficiency. For such solar cells, sputtered indium-doped tin oxide on glass is the standard substrate. As the global resources of indium are very limited, there is the challenge to move to other substrates and thus to synthesize nanostructures on these. We report on the growth and characterization of zinc oxide nanorod arrays on indium-free transparent conducting oxide substrates, in particular on sputtered aluminum-doped ZnO. We present a catalyst-free vapor-transport growth method at 510 °C, which allows for the growth of highly crystalline, well-aligned ZnO nanorods arrays with a tunable length, ranging from hundreds of nanometers to several micrometers. The nanorods exhibit an excellent crystal quality, as shown by photoluminescence measurements and high-resolution transmission electron microscopy. Optical transmission spectra show a sufficient transparency of the substrates, qualifying t...

Results of studies of hydrogen addition during the growth of thin (∼2–3 nm) InGaN layers on their structural properties and properties of light-emitting structures that contain InGaN/GaN heterostructures in the active region are reported. It is shown that, with the known effect of a decrease in the average content of In, hydrogen addition leads to varying the local phase separation in the InGaN layers. Hydrogen addition during the growth of the InGaN layers initially causes suppression of the local phase separation, while hydrogen addition during interruptions of the growth after deposition of the InGaN films leads to a decrease in the size of the formed local In-enriched regions and to a certain increase in the local content of the In atoms.

Nanocrystalline La1-xSrxCoO3-δ (LSC) thin films with a nominal Sr-content of x = 0.4 were deposited on Ce0.9Gd0.1O1.95 electrolyte substrates using a low temperature sol-gel process. The structural and chemical properties of the LSC thin films were studied after thermal treatment, which included a calcination step and a variable, extended annealing time at 700 °C or 800 °C. Transmission electron microscopy combined with selected-area electron diffraction, energy-dispersive X-ray spectrometry, and scanning transmission electron microscopy tomography was applied for the investigation of grain size, porosity, microstructure, and analysis of the local chemical composition and element distribution on the nanoscale. The area specific resistance (ASR) values of the thin film LSC cathodes, which include the lowest ASR value reported so far (ASRchem = 0.023 Ωcm2 at 600 °C) can be interpreted on the basis of the structural and chemical characterization.

Three differently sized, highly dispersed platinum nanoparticle (Pt-NP) preparations were generated by supercritical fluid reactive deposition (SFRD) and deposited on a β-cyclodextrin matrix. The average particle size and size distribution were steered by the precursor reduction conditions, resulting in particle preparations of20,100 and100 nm as characterised by TEM and SEM. As reported previously, these Pt-NPs were found to cause DNA strand breaks in human colon carcinoma cells (HT29) in a concentration- and time-dependent manner and a distinct size dependency. Here, we addressed the question whether Pt-NPs might affect directly DNA integrity in these cells and thus behave analogous to platinum-based chemotherapeutics such as cisplatin. Therefore, DNA-associated Pt as well as the translocation of Pt-NPs through a Caco-2 monolayer was quantified by ICP-MS. STEM imaging demonstrated that Pt-NPs were taken up into HT29 cells in their particulate and aggregated form, but appear not to translocate into the nucleus or interact with mitochondria. The platinum content of the DNA of HT29 cells was found to increase in a time- and concentration-dependent manner with a maximal effect at 1,000 ng/cm(2). ICP-MS analysis of the cell culture medium indicated the formation of soluble Pt species, although to a limited extent. The observations suggest that DNA strand breaks mediated by metallic Pt-NPs are caused by Pt ions forming during the incubation of cells with these nanoparticles.

We report about defect-related emission bands in GaN. We establish a direct correlation between results from spatially and spectrally resolved cathodoluminescence bands at 3.32, 3.23, 3.20, 3.16, and 3.07 eV with findings obtained by transmission electron microscopy. The band around 3.32 eV was unambiguously assigned to I 2 basal plane stacking faults (BSFs). The bands at 3.23, 3.20, 3.16, and 3.07 eV were detected in sample regions, where BSFs exist, but were not assigned to specific defect types, except for the 3.07 eV line which is a phonon replica of the transition at 3.16 eV.

A promising novel type of electrostatic phase plate for transmission electron microscopy (TEM) is presented. The phase plate consists of a single microcoaxial cable-like rod with its electrode exposed to the undiffracted electrons. The emerging field is used to shift the phase of the undiffracted electrons with respect to diffracted electrons. The design overcomes the drawback of the spatial frequency-blocking ring electrode of the Boersch phase plate. First, experimental phase-contrast images are presented for PbSe and Pt nanoparticles with clearly varying phase contrast, which depends on the applied voltage and resulting phase shift of the unscattered electrons. With the new phase-plate design, we show for the first time the reconstruction of an object wave function based on a series of only three experimental phase-contrast TEM images obtained with an electrostatic phase plate.

The electrochemistry in the anode functional layer is still one of the performance limiting factors for the standard planar anode-supported SOFC (ASC). In this contribution we present an effective method for the improvement of anode performance. It is based on a short-time application of a high current density in reverse direction (reverse current treatment, RCT). The measured impedance data sets show a progressive decrease of the overall area specific polarization resistance (ASRpol), when the ASC is exposed to a series of RCT. The change in ASRpol could be attributed to the electrochemical polarization loss in the anode functional layer (AFL), which was reduced by 40 %. Post-test analysis with FIB/SEM revealed the formation of a nanoscaled and highly porous Ni/YSZ layer between electrolyte (YSZ) and anode (Ni/YSZ). The hereby increased length of the electrochemically active triple phase boundary (TPB) is regarded to be the cause for this distinct improvement.

The crystal structure and chemical composition of Ba0.5Sr0.5Co0.8Fe0.2O3-δ bulk samples and powders were studied after heat treatments between 700 &deg C and 1000 &deg C. X-ray diffractometry (XRD) and in addition transmission electron microscopy (TEM) combined with energy dispersive X-ray spectroscopy (EDXS) was applied to analyze the properties of individual grains. Besides the cubic perovskite phase a hexagonal phase and an additional, not yet clearly identified phase was found at temperatures below 900 &deg C.

For failure assessment of natural cracks caused by surface treatment, the crack resistance for very small crack extensions is necessary. In ceramics with strongly rising R curves, the initial part of a few micrometer crack propagation is of special interest. For this purpose, the use of very small sharp starter notches introduced by a focused ion beam is recommended. As an example, the initial R curve for gas-pressure-sintered silicon nitride at high temperature will be estimated. Whereas for V-notched bending bars a fracture toughness of about 6-6.3 MPa·m 1/2 was determined, the toughness for small strength-relevant cracks was found to be K Ic ≅5.1 MPa·m 1/2 .

In an effort to understand why short wavelength (~1000 nm) GaAs-based photonic crystal slab nanocavities have much lower quality factors (Q) than predicted (and observed in Si), many samples were grown, fabricated into nanocavities, and studied by atomic force, transmission electron, and scanning electron microscopy as well as optical spectroscopy. The top surface of the AlGaAs sacrificial layer can be rough even when the top of the slab is smooth; growth conditions are reported that reduce the AlGaAs roughness by an order of magnitude, but this had little effect on Q. The removal of the sacrificial layer by hydrogen fluoride can leave behind a residue; potassium hydroxide completely removes the residue, resulting in higher Qs.

Transmission electron microscopy (TEM) in combination with energy-dispersive X-ray spectroscopy and electron energy loss spectroscopy was applied to analyze the microstructure and the local chemical composition of as-sintered and aged Y 2 O 3 -doped ZrO 2 (YDZ) thick-film substrates with yttria contents of 8.5 mol.% (8YDZ) and 10 mol.% (10YDZ). Selected-area electron diffraction and dark-field TEM imaging show nanoscale precipitates of the tetragonal YDZ phase, which are coherently embedded in grains consisting of the cubic phase. A distinct coarsening of the tetragonal regions is observed after 2500 h annealing of 8YDZ at 950 °C in an oxidizing atmosphere. This coarsening is accompanied by decomposition on the cationic sublattice on the nanoscale, leading to the depletion of yttrium in the tetragonal regions. The decomposition is discussed in terms of spinodal decomposition which takes place even at a high doping concentration of 8.5 mol.% Y 2 O 3 .

Mass-selected Aun (n=4,6,13 and 20) clusters and clusters with an initial distribution of Aum (10≤m≤20) clusters were deposited on amorphous carbon (a-C) thin films by low-energy-beam cluster deposition. The samples were stored at room temperature under ambient conditions over more than two years to analyse the stability of the cluster sizes. The cluster-size distributions were investigated by transmission electron microscopy (TEM) in regular time intervals. Several hundred Au clusters were analysed for each sample and time interval. The cluster radii were assessed by measuring the projected cluster area, which is in a good approximation a circular one. Size histograms were derived and the average radii at a given time t \( \overline R \)(t) were determined.

An ensemble of InAs quantum dots with ground state transition energies centered at 1.216 eV and density 1011dots/cm2 has been studied by time-resolved photoluminescence (PL). The wavelength of the 100-fs excitation pulse was tuned through the ground (excited) state transitions, resulting in resonant (optical phonon sideband) PL. The decay of the PL was time resolved with a streak camera in the interval 1.5–3 ns to avoid scattered laser light. The intensity of the PL was recorded with its polarization both parallel with and perpendicular to the excitation polarization (along one of the crystal’s cleave axes); the ratio is 2.22 at low temperatures and low excitation. A phenomenological rate equation analysis is made, separating the excitations into two classes, one polarized along the excitation polarization and the other unpolarized (either that way immediately after the excitation pulse or scattered from the first class). Excellent fits to the data lead to the conclusion that both classes decay radiatively with a lifetime of 1 ns, and a transfer from the polarized to the unpolarized species takes place with a distribution time of 12 ns at low temperatures and low excitation, dropping rapidly toward zero for temperatures above 30 K and for intense excitation levels. The polarization of a coherently excited ground state exciton should dephase with a rate equal to the sum of the radiative rate plus the inverse of this distribution time.

The transport properties of oxygen-ion conducting yttria-stabilized zirconia (YSZ)—featuring mean grain sizes from a few nm up to the μm regime—were studied with regard to grain-size effects. Chemically homogeneous, 8.3 mol% YSZ thin films (thickness approximately 400 nm) were processed on single-crystal sapphire substrates by a sol–gel method. The mean grain size d of the thin films was systematically adjusted to 5 nm≤d≤782 nm by (i) a rapid thermal annealing step for conversion into the oxide phase and (ii) a consecutive calcination step at 650°C≤Tcal (24 h) ≤1400°C for grain growth. The quality of the thin films was examined with respect to chemical homogeneity, crystal structure, grain-size, and grain-boundary properties. Total and specific conductivities of the thin films were characterized by means of electrical impedance spectroscopy at 200°≤T≤400°C in ambient air, where a complex nonlinear least-squares approximation was applied to determine the bulk conductivity and the grain-boundary conductivity. Despite grain boundaries being free of second phases, oxygen transport was observed to be impeded by the grain boundaries as the specific grain-boundary conductivity was determined to be two orders of magnitude below the bulk conductivity for thin films with d>36 nm. The transport properties of nanoscaled YSZ thin films (5 nm≤d≤36 nm) were modeled by application of the brick-layer model indicating the absence of beneficial grain-size effects at the nanoscale.

The electrical and structural properties of nanoscale niobium pentoxide (Nb2O5) dielectric layers in niobium-based solid electrolyte capacitors were studied. The Nb2O5 layers are formed by anodic oxidation of Nb-powder compacts. Capacitance measurements show a strong bias-voltage dependence of the capacitance after anodization. Heat treatments at temperatures up to 320 °C, which are applied in the capacitor-production process, lead to an increase of the capacitance and a reduction of the bias dependence. Based on the electrical and structural properties, which are characterized by electron microscopic techniques, a model is presented which explains the behavior of the specific capacitance after the various processing steps.

We fabricate split-ring-resonator arrays via direct laser writing of polymers, followed by atomic-layer deposition of titania, chemical vapor deposition of silver, and focused-ion-beam milling. While structures like that have been fabricated previously by other means, our approach here allows for a direct comparison with the optical properties of corrugated metal surfaces, which are fabricated along the same lines. This comparison reveals substantial differences regarding the magnetic metamaterial properties. In particular, we find that the optical response of the corrugated metal surfaces is due to a higher-order magnetic resonance, whereas that of the split-ring resonators stems from their fundamental magnetic resonance.

Supercritical fluid reactive deposition was used for the deposition of highly dispersed platinum nanoparticles with controllable metal content and particle size distribution on beta-cyclodextrin. The average particle size and size distribution were steered by the precursor reduction conditions, resulting in particle preparations20,100, and100 nm as characterized by transmission electron microscopy and scanning electron microscopy (SEM). These particle preparations of different size distributions were used to address the question as to whether metallic platinum particles are able to invade cells of the gastrointestinal tract as exemplified for the human colon carcinoma cell line HT29 and thus affect the cellular redox status and DNA integrity. Combined focused ion beam and SEM demonstrated that platinum nanoparticles were taken up into HT29 cells in their particulate form. The chemical composition of the particles within the cells was confirmed by energy-dispersive X-ray spectroscopy. The potential influence of platinum nanoparticles on cellular redoxsystems was determined in the DCF assay, on the translocation of Nrf-2 and by monitoring the intracellular glutathione (GSH) levels. The impact on DNA integrity was investigated by single cell gel electrophoresis (comet assay) including the formation of sites sensitive to formamidopyrimidine-DNA-glycosylase. Platinum nanoparticles were found to decrease the cellular GSH level and to impair DNA integrity with a maximal effect at 1 ng/cm(2). These effects were correlated with the particle size in an inverse manner and were enhanced with increasing incubation time but appeared not to be based on the formation of reactive oxygen species.

A multi-layer growth process is established for the growth of GaN on ZnO films and implemented to the growth of GaN around ZnO nanopillars using metalorganic vapor phase epitaxy (MOVPE). We have successfully grown GaN/ZnO coaxial nanopillar heterostructures and, furthermore, high quality single-crystal GaN nanotubes by increasing the growth temperature. Scanning electron microscopy, transmission electron microscopy, low temperature (10 K) photoluminescence spectroscopy, and high-resolution X-ray diffraction exhibit good crystalline and morphological properties of both of these structures.

Frictional behavior and interfacial adhesion of differently textured pyrolytic carbon layers on Si substrate were investigated by indentation and scratch testing. A large amount of elastic recovery and a low coefficient of friction (μ = 0.05 to 0.09) were observed. Elastic/plastic and frictional behaviors of the coatings are strongly influenced by the microstructure of the pyrolytic carbon films, especially by the texture. The critical load at which the first abrupt increase in the normal displacement occurs was used to characterize interfacial adhesive strength. A pyrolytic carbon film deposited at higher residence time from a gas mixture containing 3% oxygen exhibited higher critical loads than film deposited at lower residence time without oxygen. The results can be understood if one assumes that the gas phase composition during deposition significantly influences the bonding strength at the interface. Failure mechanisms are discussed for both types of films.

Nano- and microcrystalline yttria-stabilized zirconia (YSZ) thin films with a dopant concentration of 8.3 +/- 0.3 mol% Y2O3 were prepared with a variation in grain size by two orders of magnitude. A sol-gel-based method with consecutive rapid thermal annealing was applied to fabricate YSZ films, resulting in about 400 nm YSZ on sapphire substrates. The average grain sizes were varied between 5 nm and 0.5 mu m by heat treatment in the temperature range of 650 degrees-1350 degrees C for 24 h. High-resolution (HRTEM) and conventional transmission electron microscopy analyses confirmed specimens-irrespective of the thermal treatment-consisting of cubic (c-)ZrO2 grains with nanoscaled tetragonal precipitates coherently embedded in the cubic matrix. Energy-dispersive X-ray spectroscopy and HRTEM on a large number of specimens yielded a homogeneous yttria concentration within the grains and at the grain boundaries with the absence of impurities, i.e. silica at the grain boundaries.

We present a detailed transmission electron microscopy study of the structure and distribution of self-organized Fe-rich nanocrystals in (Ga,Fe)N grown via metal-organic vapor phase epitaxy (MOVPE). In samples with a concentration of magnetic ions above the solubility limit— x ⩾ 0.4 % —of Fe in GaN at the growth conditions we can identify three different phases of the Fe-rich enclosures, namely: (a) α -Fe segregated in proximity of the surface, (b) e -Fe 3 N in the volume beneath, though well above the nominal interface between the undoped GaN buffer and the Fe-doped overlayer, and (c) nanocrystals at an intermediate location showing the presence of adjacent α -Fe and e -Fe 3 N. These observations suggest that nitrogen evaporation at the growing surface play an important role in the formation of Fe-rich phases. The occurrence of α -Fe and e -Fe 3 N in the same nanocrystal indicates that the two phases are actually correlated: phase separation may first lead to the precipitation of e -Fe 3 N, which inherits the hexagonal structure of GaN but generates misfit dislocations, and then a further depletion of nitrogen promotes the conversion of e -Fe 3 N into α -Fe.

We have studied the crystal structure of GaAs nanowhiskers grown by molecular beam epitaxy (MBE) on gold-activated GaAs(111)B substrates. The results of reflection high-energy electron diffraction and transmission electron microscopy showed that the MBE-grown GaAs nanowhiskers can form a crystal structure of sphalerite, wurtzite, or an intermediate phase close to 4H polytype, depending on the deposition conditions and the size of catalyst droplets. The results are interpreted within the framework of a thermodynamic model.

Nanocrystalline La1−xSrxCoO3−δ (LSC) thin films with a nominal Sr content x = 0.5 were deposited on 3.5 mol% yttria-stabilized zirconia (YSZ) substrates by a low-temperature sol–gel process followed by a rapid thermal annealing procedure at temperatures up to 900 °C. The structural and chemical stability of the as-prepared nanocrystalline LSC and demixing effects within the thin film or at the LSC/YSZ interface were studied after long-time exposure at temperatures between 700 °C and 1,000 °C. The grain size and surface topography were analyzed by scanning electron microscopy. Transmission electron microscopy combined with selected-area electron diffraction, energy-dispersive X-ray spectrometry, and electron-spectroscopic imaging was applied for the investigation of the microstructure and the analysis of the local chemical composition and element distribution on the nanoscale. Chemical potential calculations, which were performed to assess the decomposition of LSC/YSZ as a function of temperature, show good agreement with the experimental results.

Heterogeneous doping of nanocrystalline ceria films, by controlled in-diffusion along grain boundaries, is explored as a means for modifying the space charge potential and the inhomogeneous distribution of defects in the space charge layer known to control the electrical properties of nanocrystalline electroceramics. Nanocrystalline cerium oxide thin films were grown by pulsed laser deposition and modified by a novel doping technique. Thin diffusion sources were deposited and cations such as Ni2+ and Gd3+ were in-diffused at temperatures of 700–800 °C along columnar grain boundaries normal to the surface; the resulting diffusion profiles were examined by Time-of-Flight SIMS. The properties of these modified films were compared with as-deposited samples, with in-diffusion resulting in decreased electrical conductivity. It is proposed that the variation in conductivity results from a redistribution of charge carriers in the space charge layers due to a change in the space charge potential.

SUMMARY Carbon/carbon composites produced by chemical vapor infiltration consist of carbon fibers embedded in a matrix of pyrolytic carbon with anisotropic mechanical properties. The matrix around fibers consists of cylindrically shaped pyrolytic carbon layers of coating, which may have different textures with different mechanical properties in the axial, radial and circumferential directions. The goal of the present numerical study is to investigate the influence of the coating microstructure on stress concentrations and possible modes of failure in the carbon composite. Numerical modeling was performed on two length scales. First, the material properties of the differently textured pyrolytic carbon layers were determined on the nanometer scale using methodology based on the Eshelby theory for continuously distributed inclusions. Then, the obtained material parameters for each layer were used as input for the finite element models on the micrometer scale. The numerical simulations were conducted for three basic loading scenarios: uniaxial tension, shear loading and hydrostatic compression. The calculated stress distributions show zones of maximum stress concentrations and provide information on the possible failure regions for each material under all considered loading cases. The numerical results demonstrate good correspondence with experimentally identified failure regions. Copyright q 2008 John Wiley & Sons, Ltd.

Electron microscopic and electron spectroscopic techniques were applied to study interface properties, microstructure and texture of pyrolytic carbon obtained after short-time chemical vapor deposition (CVD) on planar Si substrates. The pyrolytic carbon was obtained in a hot-wall reactor from methane at a total pressure of 20 kPa and temperature of 1100 °C. Only short depositions between 2.5 and 240 min were performed. The carbon deposition starts with the nucleation of isolated islands. The increase of residence and deposition time leads to the formation of a continuous layer by larger island sizes and higher island densities, a transition from rough to smooth surfaces and formation of pores on smooth surfaces. An increased deposition rate during the first 15 min is observed which is correlated with a granular morphology of the carbon layer. Using BN-covered Si wafers with a surface roughness on a 100 nm scale reduces the texture degree in the vicinity of the interface and strengthens adhesion of the pyrolytic carbon compared to the smooth Si substrate. The texture of high-textured pyrolytic carbon is improved significantly by annealing at 1100 °C.

Needle-shaped atom probe specimens containing a single grain boundary were produced using the focused ion beam (FIB) of a two-beam FIB/SEM (scanning electron microscope) system. The presented specimen preparation approach allows the unprecedented study of a grain boundary which is well characterised in its crystallographic orientation by means of the field ion microscope (FIM) and the tomographic atom probe (TAP). The analysis of such specimens allows in particular the determination of solute excess atoms at this specific grain boundary and hence the investigation of the segregation behaviour. The crucial preparation steps are discussed in detail in the present study for the Σ 19a {331} 〈1 1 0〉 grain boundary of a 40 at.ppm-Bi doped Cu bi-crystal. Transmission electron microscope (TEM) images and TAP analyses of the atom probe tips demonstrate unambiguously the presence of the selectively prepared grain boundary in the apex region of some of the specimens.

We investigate the dynamics of electrons injected into InAs/GaAs quantum dots by initializing and further observing the spin state of the electrons. For this purpose, we use spin polarized light-emitting diodes where the electron spin is set in a semimagnetic ZnMnSe layer. We find that the degree of optical polarization depends strongly on the ground state energy of the quantum dot. A dependence of polarization on dopant concentration in the spin aligner suggests an influence of residual electrons in the quantum dots.

The subsurface microstructure of machined, heat-treated and shot peened samples of pearlitic steel was studied by focused ion beam (FIB) microscopy. Samples with flat surfaces were prepared by mechanical milling and subjected to a normalizing heat treatment. Then the surface was shot peened at an inclination angle of 45° with respect to the surface normal at pressures of 2, 2.5 or 4 bar. Near-surface cross-sections of as-normalized and of shot peened samples were prepared using a focused ion beam workstation and studied using the same instrument. Results show that a nanocrystalline surface layer less than 1 μm thick is formed by the mechanical milling and the subsequent heat treatment. The effects of shot peening reach to a depth of about 20 μm. Within this layer the material is sheared parallel in one direction due to the peening inclination. The amount of shear appears to increase monotonically towards the surface. The study demonstrates that FIB preparation and microscopy techniques offer unprecedented insight into the subsurface microstructure of mechanically treated surfaces.

We investigated InGaAs layers grown by molecular-beam epitaxy on GaAs (001) with transmission electron microscopy (TEM) and photoluminescence spectroscopy. InGaAs layers with In-concentrations of 16, 25 and 28 % and respective thicknesses of 20, 22 and 23 monolayers were deposited at 535 °C. Island formation is observed for the layer with the highest In-concentration. Inconcentration profiles were obtained from high-resolution TEM images by composition evaluation by lattice fringe analysis. The measured profiles can well be fitted applying the segregation model of Muraki et al. [Appl. Phys. Lett. 61 (1992) 557] and are in excellent quantitative agreement with the photoluminescence peak positions. From our data we conclude that island formation occurs when the amount of Indium in the In-floating layer reaches 1.1±0.2 monolayers indium.

Imaging of weak amplitude and phase objects, such as unstained vitrified biological samples, by conventional transmission electron microscopy (TEM) suffers from poor object contrast since the amplitude and phase of the scattered electron wave change only very little. In phase contrast light microscopy the imaging of weak phase objects is greatly enhanced by the use of a quarter-wave phase plate, which produces high signal contrast by shifting the phase of the scattered light. An analogous quarter-wave plate for the electron microscope, designed as an electrostatic einzel lens, was proposed by Boersch in 1947 but the small dimensions of the device have impeded its realization up to now. We here present the first fabrication and application of a miniaturized electrostatic einzel lens driven as TEM quarter-wave phase plate. Phase modulation is generated by the electrostatic field confined to the inside of a microstructured ring electrode. This field affects the phase velocity of the unscattered part of the electron wave. By varying its strength the phase shift of the primary beam can be adjusted to π / 2 , producing strong phase contrast independent of spatial frequency. The phase plate proves to be mechanically stable and does not impair image quality, in particular it does not reduce the high-resolution signal. The expected residual lens effect of the einzel lens is minimal. Our microlens is supported by conducting rods arranged in a threefold symmetry. This particular geometry provides optimized single-sideband signal transfer for spatial frequencies otherwise obstructed by the supporting rods.

We report on progress in growth and applications of submonolayer (SML) quantum dots (QDs) in high-speed vertical-cavity surface-emitting lasers (VCSELs). SML deposition enables controlled formation of high density QD arrays with good size and shape uniformity. Further increase in excitonic absorption and gain is possible with vertical stacking of SML QDs using ultrathin spacer layers. Vertically correlated, tilted or anticorrelated arrangements of the SML islands are realized and allow QD strain and wavefunction engineering. Respectively, both TE and TM polarizations of the luminescence can be achieved in the edge-emission using the same constituting materials. SML QDs provide ultrahigh modal gain, reduced temperature depletion and gain saturation effects when used in active media in laser diodes. Temperature robustness up to 100 °C for 0.98 μm range vertical-cavity surface-emitting lasers (VCSELs) is realized in the continuous wave regime. An open eye 20 Gb/s operation with bit error rates better than 10−12has been achieved in a temperature range 25–85 °Cwithout current adjustment. Relaxation oscillations up to ∼30 GHz have been realized indicating feasibility of 40 Gb/s signal transmission.

Carbon/carbon composites produced by chemical vapor infiltration consist of carbon fibers embedded in a pyrolytic carbon matrix with a cylindrically layered structure at the microscale. Each coating layer has a different texture and different mechanical properties that depend on temperature. Stress distributions in such carbon matrices subjected to thermal loading and their possible failure scenarios are analyzed. A two-scale numerical model is developed. At the nanoscale, material properties of each layer are determined using a methodology based on the Eshelby's theory for continuously distributed inclusions. The resulting material parameters for each layer are then used in the finite element modeling at the microscale. Calculations are conducted for composites with different matrix structures for several cases of thermal loading. Calculated stress distributions show zones of maximal stress concentration and provide information on possible failure regions which correspond well with experimentally identified failure regions.

We present a comprehensive structural investigation of the Ge wetting layer (WL) and island growth on Si(001) substrates by a combination of AFM, high resolution transmission electron microscopy and the energy-differential coherent Bragg rod analysis (COBRA) x-ray method. By considering the influence of the initial Si surface morphology on the deposited Ge, these techniques provide quantitative information on the Ge content and its distribution, in particular within the WL which plays a crucial role in the formation of epitaxial nanostructures. In the WL, the Ge content was found to be above 80% for our growth conditions. Furthermore, from the digital analysis of high-resolution transmission electron microscope images, quantitative information on the strain relaxation is obtained, which complements the COBRA analysis of the Ge distribution and content in these nanostructures.

The two-dimensional electron system (2DES) in $\mathrm{LaAl}{\mathrm{O}}_{3}/\mathrm{SrTi}{\mathrm{O}}_{3}$ (LAO/STO) heterostructures, showing superconductivity below 200 mK at ambient pressure, displays incipient localization under hydrostatic pressure $p$. Even small $p$ significantly affects the transport properties for $10\phantom{\rule{0.16em}{0ex}}\mathrm{K}lTl100\phantom{\rule{0.16em}{0ex}}\mathrm{K}$ where impurity scattering dominates. The distinct $T$ dependence of impurity scattering results in a minimum of the sheet resistance ${R}_{\mathrm{s}}(T)$, which has been often attributed to Kondo scattering. We show that the strong suppression of the dielectric permittivity $\ensuremath{\varepsilon}(p)$ of STO enhances impurity scattering via the loss of screening and leads to incipient localization of charge carriers with increasing hydrostatic pressure. For $Tl10\phantom{\rule{0.16em}{0ex}}\mathrm{K}$ negative logarithmic corrections to the conductance are attributed to electron-electron interaction. Weak localization and antilocalization, if present, are dominated by the pivotal role of impurity scattering by, e.g., oxygen vacancies, for the transport properties of the 2DES in LAO/STO heterostructures. This interpretation is favorited by exploiting the strong dependence of the dielectric permittivity of STO on pressure. Measurements of the magnetoresistance corroborate this interpretation.

Protein binding to lipid-coated nanoparticles has been pursued quantitatively by using fluorescence correlation spectroscopy. The binding of three important plasma proteins to lipid-enwrapped quantum dots (QDs) shows very low affinity, with an apparent dissociation coefficient in the range of several hundred micromolar. Thus, the tendency to adsorb is orders of magnitude weaker than for QDs coated with dihydrolipoic acid.

Mo(0), W(0), Fe(0), Ru(0), Re(0), and Zn(0) nanoparticles—essentially base metals—are prepared as a general strategy by a sodium naphthalenide ([NaNaph])-driven reduction of simple metal chlorides in ethers (1,2-dimethoxyethane (DME), tetrahydrofuran (THF)). All the nanoparticles have diameters ≤10 nm, and they can be obtained either as powder samples or long-term stable suspensions. Direct follow-up reactions (e.g., Mo(0)+S8, FeCl3+AsCl3, ReCl5+MoCl5), moreover, allow the preparation of MoS2, FeAs2, or Re4Mo nanoparticles of similar size as the pristine metals (≤10 nm).

Thin-film phase plates (PPs) have become an interesting tool to enhance the contrast of weak-phase objects in transmission electron microscopy (TEM). The thin film usually consists of amorphous carbon, which suffers from quick degeneration under the intense electron-beam illumination. Recent investigations have focused on the search for alternative materials with an improved material stability. This work presents thin-film PPs fabricated from metallic glass alloys, which are characterized by a high electrical conductivity and an amorphous structure. Thin films of the zirconium-based alloy Zr65.0Al7.5Cu27.5(ZAC) were fabricated and their phase-shifting properties were evaluated. The ZAC film was investigated by different TEM techniques, which reveal beneficial properties compared with amorphous carbon PPs. Particularly favorable is the small probability for inelastic plasmon scattering, which results from the combined effect of a moderate inelastic mean free path and a reduced film thickness due to a high mean inner potential. Small probability plasmon scattering improves contrast transfer at high spatial frequencies, which makes the ZAC alloy a promising material for PP fabrication.

The application of Yttria-stabilized Zirconia (YSZ) as solid electrolyte in high-temperature solid oxide fuel cells (SOFC) is well established. However, the strong decrease of the ionic conductivity in 8.5 mol% Y 2 O 3 -doped ZrO 2 at high temperature has not yet been clarified completely. To contribute to the understanding of the degradation process, transmission electron microscopy (TEM) was applied to analyze the microstructure in YSZ electrolyte substrates in as-sintered and aged material. Selected area electron diffraction and conventional TEM imaging were performed to investigate the evolution of different phases and phase transitions in YSZ. Grain boundary charging and the possible formation of a glassy phase at grain boundaries after aging were investigated using transmission electron holography and high-resolution TEM. The ionic conductivity was characterized by dc-conductivity measurements and impedance spectroscopy.

The influence of the growth conditions during molecular-beam epitaxy on the properties of InAs/GaAs quantum dot structures were systematically investigated by low temperature photoluminescence spectroscopy and transmission electron microscopy. The circular polarization degree (CPD) of the electroluminescence was compared for two quantum-dot spin-injection light-emitting diodes. The CPD depends on the position of the emission energy in the luminescence band. This correlation is similar for both samples despite the strongly different quantum dot morphologies. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Holographic lithography is an established technique for fabricating three-dimensional photonic-crystal templates. [1–12] The principle of holographic lithography is to expose a photoresist layer to an interference pattern. After processing, a porous polymer–air structure results. In order to achieve a desirable complete photonic bandgap (PBG), these templates have to be replicated with silicon [13] or other high-index materials. Theory predicts complete PBGs for certain crystal symmetries and crystallographic motifs. [5,8–12] In all these proposals it is tacitly assumed that the surface of the resulting polymer template coincides with an isodose surface of the exposing interference pattern. However, many deviations resulting from various steps in the fabrication process may be present. [14] Based on our studies we find that shrinkage is the most prominent deviation. Photoresist shrinkage can be anisotropic and in some cases reduces the size of the template by up to 50%, which significantly affects the PBG and, therefore, can not be neglected. By quantifying and precompensating the anisotropic shrinkage, we solve this problem for the first time for the most common photoresist system in holographic lithography, namely SU-8 from MicroChem. A lateral shrinkage has previously been discussed [15] for a different resist and

Ga+ focused ion beam (FIB) patterning was used to structure highly oriented pyrolytic graphite surfaces with square, periodic arrays of amorphous carbon defects (mesh sizes: 300 nm–2 µm). Controlled oxygen etching of these arrays leads to matrices of uniform, orientationally aligned, nm-sized, hexagonal holes. The properties of the resulting hole assembly (hole depths and lateral hole dimensions) have been investigated by means of atomic force microscopy, scanning electron microscopy and FIB sectioning. The hole dimensions and uniformity both depend on the FIB parameters and etching conditions. Etching temperatures from 500 to 700 °C were applied. Initial etch rates of up to 106 C s−1 per individual hole were observed when using oxygen pressures of 200 mbar. For an etch temperature of 590 °C the rate of etching of individual holes was found to depend measurably on the inter-hole separation. This confirms that the associated reaction kinetics is mediated by the finite diffusion length of reactive oxygen species along the graphite basal plane. Prolonged etching results in hole–hole contact and generation of mesa arrays of controllable size and shape.

We investigate electrical spin injection from a semi-magnetic n-type ZnMnSe spin aligner into III–V p–i–n diodes with InGaAs quantum dots (QDs) in the active layer. Quantitative transmission electron microscopy techniques are applied to characterize the different dot types used. Analysis of the circular polarization degree (CPD) of the device emission indicates the spin polarization of the injected electrons. Values of more than 70% are obtained for the wetting layer and high-energy QD states. However, the CPD shows a strong spectral dependence due to spin relaxation at the stage, before the electrons are finally captured in the dots. This is, e.g., evidenced by an initial increase of the polarization degree with rising temperature, attributed to motional narrowing effects. As a prerequisite for more detailed studies, we also demonstrate electrical spin injection into single InGaAs QDs, which should provide the basis for future single spin manipulation experiments. Finally, we suggest GaInNAs as optically active material for the realization of spin-polarized light-emitting diodes with long-wavelength emission. First results indicate CPD values of up to 80% for λ = 1130 nm, suggesting this approach to be very promising. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Pyrolytic carbon layers were deposited from methane/oxygen/argon mixtures on planar substrates (silicon wafers) at a total pressure of 100 kPa, a maximum gas residence time of 2 s and a temperature of 1100 °C. The depositions were performed in a hot-wall reactor with the substrate oriented parallel to the gas flow. Particular attention was paid to factors that influence the reproducibility of the deposited layers. Scanning and transmission electron microscopy were applied to study the thickness profiles and the texture of the carbon layers. The surface topography was investigated by atomic force microscopy. For pyrolytic carbon deposited without oxygen, an alteration from medium- to high-textured carbon is observed with increasing residence time. Islands are observed on the surface of the layer whose size increases with the texture. For pyrolytic carbon deposited with 3% oxygen, lower deposition rates were obtained and a strong modification of the texture is found compared to gas mixtures without oxygen.

We report on the injection of electron spins into InGaAs quantum dots with an efficiency of up to 60%. This injection is observed in p-i-n light-emitting diode structures using the diluted magnetic semiconductor ZnMnSe as spin aligner (spin-LED). The degree of spin polarization is deduced from the circular polarization degree of the photons emitted when the injected electrons recombine in the quantum dots with unpolarized holes. We observe a strong energy dependence of the polarization degree with a strong increase starting from zero to a high value on the high energy side of the emission spectrum. To study the origin of this dependence, we compare results of two quantum-dot samples with emission peaks at 1.2 eV and 1.33 eV, respectively. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

The structure of the fiber –matrix interface region of carbon-fiber/carbon-matrix (C/C)-composites, which is important for the mechanical properties of a composite, was studied by transmission electron microscopy. The pyrolytic carbon matrix was obtained by chemical vapor infiltration of carbon fiber preforms with different fiber architecture and fiber types. While the texture of the carbon matrix can be controlled by the infiltration conditions, the carbon texture at the fiber –matrix interface differs from the bulk matrix and cannot be determined by the infiltration parameters. We often observe a high-textured layer with a thickness up to 100 nm at the interface prior to the formation of the bulk matrix with a lower texture. The fiber –matrix interface properties of C/C-composites are compared with the interface of pyrolytic carbon layers deposited on planar Si-, BN- and cordierite-substrates. In contrast to BN-substrates, thin high-textured pyrolytic layers are observed at the interface of carbon on planar Si- and cordierite-substrates where strong bonding between pyrolytic carbon and the substrate is achieved by the formation of Si-C bonds. Stress-induced ordering is discussed as a mechanism for the formation of the high-textured interface layers.

Electrolytic anodization was used to form amorphous niobium oxide layers on niobium and V-doped niobium powder compacts which act as dielectric layers, e.g. in niobium-based solid electrolyte capacitors. The microstructure development within the layered structure niobium-niobium oxide was studied by scanning- and transmission electron microscopy in order to investigate the influence of processing parameters. It could be shown that the thickness as well as the quality of the oxide layers on niobium vary in a considerable range, depending on processing parameters. Examination of the influence of heat treatments on the structural properties of the oxide layers revealed remarkable changes at the niobium – niobium oxide interface upon heat impact exceeding 300°C. In contrast, the interface remains stable with respect to the as-anodized sample when annealing was performed at lower temperature.

The phase shift induced by thin amorphous carbon films with thicknesses between 1 and 16 nm was measured by electron holography in a transmission electron microscope. Large phase shifts Delta phi are observed as the thickness of the amorphous C films decreases which cannot be described by the well-known equation Delta phi = CE V0t (V0: mean inner Coulomb potential of the material, t: sample thickness). Data plotted in a Delta phi vs. t diagram can be well-fitted by a modified equation Delta phi=CE V0t + phi add. The mean inner Coulomb potential of the amorphous carbon with a density of 1.75 g/cm3 was determined to be 9.09 V which is consistent with previous experimental data for amorphous carbon with a higher density. The thickness-independent phase offset phi(add) of 0.497 rad is large for amorphous carbon under the given experimental conditions. We suggest that a surface-related electrostatic potential is responsible for the thickness-independent contribution phi add.

Using the well established MBE process, we introduced colloidal nanocrystals (NCs) into monocrystalline semiconductor layers. CdSe nanorods (NRs) and CdSe(ZnS) core-shell nanodots (NDs) with radii R between 2 and 4 nm on a ZnSe surface are capped by thin (d ∼ 2R ) and thick (d > 2R ) MBE-grown ZnSe layers of a thickness d . This new growth technique does not rely on strain like the Stranski-Krastanow growth of CdSe/ZnSe quantum dot layers, and thus offers additional degrees of freedom for choosing the NC composition, shape and size. In- and ex- situ characterisations of the samples are showing a ZnSe cap layer of high crystalline quality. After the growth of the cap layer the dots preserve their shape and emission spectrum. High-resolution transmission electron microscope images show the direct connection of the NCs crystal lattice to the crystal lattices of the ZnSe buffer and the epitaxially grown cap layer. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)