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Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011. [ABSTRACT FROM PUBLISHER]

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010. [ABSTRACT FROM PUBLISHER]

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009 [ABSTRACT FROM PUBLISHER]

Although often discussed, the role of threading dislocations (TDs) in the degradation of lateral GaN-on-Si p-GaN HEMTs under reverse bias stress test (RBST) has never been clearly shown in experiment until today. Here we present a novel test concept to establish a direct correlation between dislocations and degradation sites in RBST and demonstrate it on lateral p-GaN/AlGaN/GaN PIN diodes. By scaling down structures down to ~500 nm width, the point of degradation is always forced to be located at a defined position, independent of the local position of TDs. Furthermore, an integrated serial p-GaN resistor has been implemented with the PIN diode, which effectively limits the current and protects the device from a large meltdown due to parasitic capacitances and enables TEM analysis of structural degradation. A large quantity of lateral PIN devices exhibit a similar time-to-breakdown under RBST, indicating the intrinsic nature of this failure mode. Planar TEM analysis of a degraded and failed device clearly reveals structural damages and a breakdown of the AlGaN barrier as the failure signature. A combined planar and cross-sectional TEM lamella analysis approach of the expected failure site was introduced and applied. The results unambiguously show, that the observed degradation in the AlGaN barrier, which is attributed to the intrinsic failure mode, is not directly linked to the position of a dislocation. • A novel test structure to study effect of dislocations on degradation was developed. • Intrinsic degradation of reverse-biased lateral GaN-on-Si PIN junctions was studied. • Combined planar and CS TEM analysis found structural damages in AlGaN barrier. • Observed AlGaN damages are not directly linked to the position of a dislocation. [ABSTRACT FROM AUTHOR]

Abstract Background The effect of osmolarity on cellular physiology has been subject of investigation in many different species. High osmolarity is of importance for biotechnological production processes, where high cell densities and product titers are aspired. Several studies indicated that increased osmolarity of the growth medium can have a beneficial effect on recombinant protein production in different host organisms. Thus, the effect of osmolarity on the cellular physiology of Pichia pastoris, a prominent host for recombinant protein production, was studied in carbon limited chemostat cultures at different osmolarities. Transcriptome and proteome analyses were applied to assess differences upon growth at different osmolarities in both, a wild type strain and an antibody fragment expressing strain. While our main intention was to analyze the effect of different osmolarities on P. pastoris in general, this was complemented by studying it in context with recombinant protein production. Results In contrast to the model yeast Saccharomyces cerevisiae, the main osmolyte in P. pastoris was arabitol rather than glycerol, demonstrating differences in osmotic stress response as well as energy metabolism. 2D Fluorescence Difference Gel electrophoresis and microarray analysis were applied and demonstrated that processes such as protein folding, ribosome biogenesis and cell wall organization were affected by increased osmolarity. These data indicated that upon increased osmolarity less adaptations on both the transcript and protein level occurred in a P. pastoris strain, secreting the Fab fragment, compared with the wild type strain. No transcriptional activation of the high osmolarity glycerol (HOG) pathway was observed at steady state conditions. Furthermore, no change of the specific productivity of recombinant Fab was observed at increased osmolarity. Conclusion These data point out that the physiological response to increased osmolarity is different to S. cerevisiae. Increased osmolarity resulted in an unfolded protein response (UPR) like response in P. pastoris and lead to pre-conditioning of the recombinant Fab producing strain of P. pastoris to growth at high osmolarity. The current data demonstrate a strong similarity of environmental stress response mechanisms and recombinant protein related stresses. Therefore, these results might be used in future strain and bioprocess engineering of this biotechnologically relevant yeast.

Abstract Background Pichia pastoris is widely used as a production platform for heterologous proteins and model organism for organelle proliferation. Without a published genome sequence available, strain and process development relied mainly on analogies to other, well studied yeasts like Saccharomyces cerevisiae. Results To investigate specific features of growth and protein secretion, we have sequenced the 9.4 Mb genome of the type strain DSMZ 70382 and analyzed the secretome and the sugar transporters. The computationally predicted secretome consists of 88 ORFs. When grown on glucose, only 20 proteins were actually secreted at detectable levels. These data highlight one major feature of P. pastoris, namely the low contamination of heterologous proteins with host cell protein, when applying glucose based expression systems. Putative sugar transporters were identified and compared to those of related yeast species. The genome comprises 2 homologs to S. cerevisiae low affinity transporters and 2 to high affinity transporters of other Crabtree negative yeasts. Contrary to other yeasts, P. pastoris possesses 4 H+/glycerol transporters. Conclusion This work highlights significant advantages of using the P. pastoris system with glucose based expression and fermentation strategies. As only few proteins and no proteases are actually secreted on glucose, it becomes evident that cell lysis is the relevant cause of proteolytic degradation of secreted proteins. The endowment with hexose transporters, dominantly of the high affinity type, limits glucose uptake rates and thus overflow metabolism as observed in S. cerevisiae. The presence of 4 genes for glycerol transporters explains the high specific growth rates on this substrate and underlines the suitability of a glycerol/glucose based fermentation strategy. Furthermore, we present an open access web based genome browser http://www.pichiagenome.org.

A low ohmic contact resistance is a key request on AlGaN/GaN HEMT devices especially when dealing with higher frequency applications. In such a GaN material system very high annealing temperatures of up to 900 °C are frequently necessary to achieve low ohmic resistance. It is known that high annealing temperatures could reduce electrical performance and reliability of the devices. Therefore, low contact resistances at reduced annealing temperatures are beneficial. In the present work a special SiCl 4 plasma treatment was applied prior to the ohm metallisation resulting in sufficiently low ohmic resistances at a significantly reduced anneal temperature of 750 °C. High resolution physical analysis by transmission electron microscopy (TEM) and time of flight secondary mass spectroscopy (TOFSIMS) have been performed to understand the structural and chemical differences between the treated ohmic contacts compared to contacts processed under standard conditions. An advanced preparation technique was developed to get access to the reaction interfaces for TOFSIMS analysis from backside. It could be shown that the SiCl 4 treated samples reveal less impurities/contaminants on the ohmic metal–GaN/AlGaN interface and a different metal semiconductor alloying. The diffusion of metals like Al and Au into the semiconductor substrate was detected at the front of the TiN forming reaction. [ABSTRACT FROM AUTHOR]

An abstract of the conference paper "CN54gp140: Product characteristics, peclinical and clinical use - Recombinant glycoprotein for HIV immunization," by D. Katinger and colleagues is presented.

Developing high quality GaN/dielectric interfaces is a fundamental step for manufacturing GaN vertical power transistors. In this paper, we quantitatively investigate the effect of planar etching treatment and trench formation on the performance of GaN-based MOS (metal oxide semiconductor) stacks. The results demonstrate that (i) blanket etching the GaN surface does not degrade the robustness of the deposited dielectric layer; (ii) the addition of the trench etch, while improving reproducibility, results in a decrease in the breakdown performance compared to the planar structures. (iii) For trench structures, the voltage for a 10 year lifetime is still above 20 V, indicating a good robustness. (iv) To review the trapping performance across the metal-dielectric-GaN stack, forward-reverse capacitance–voltage measurements with and without stress and photo-assistance are performed. Overall, as-grown planar capacitors devoid of prior etching steps show the lowest trapping, while trench capacitors have higher interface trapping and bulk trapping comparable to the blanket etched capacitors. (v) The nanostructure of the GaN/dielectric interface was characterized by high resolution scanning transmission electron microscopy. An increased roughness of 2–3 monolayers at the GaN surface was observed after blanket etching, which was correlated with the higher density of interface traps. The results presented in this paper give fundamental insight on how the etch and trench processing affects the trapping and robustness of trench-gate GaN-metal-oxide-semiconductor field effect transistors and provide guidance for the optimization of device performance. [ABSTRACT FROM AUTHOR]

Abstract For the first time a non-invasive localisation of a soft breakdown (SBD) is shown. The localisation is completed on fully functional back end of line (BEOL) test structures. The test structures used, provided by the interuniversity microelectronics centre (imec), are metal insulator semiconductor (MIS) structures. The low k dielectric within the test structures is SiOCH type with OSG 2.0 (k = 2.0), 45% porosity and 40 nm thickness. Contacless faul isolation methods have been evaluated for detecting a SBD on these structures. We evaluated photon emission microscopy (PEM) with two different signal detectors, the Si – CCD and the InGaAs camera. A proof of concept for detecting a SBD with themal laser stimulation (TLS) is presented. Using a Si – CCD and up to 2000 s integration time, photon emission (PE) signals from a 2 μm × 2 μm test structure with a leakage current less than 1 nA are presented. With the InGaAs detector a localised SBD from a 2 μm × 2 μm test structure with a leakage current of 100 pA is shown. The detected SBDs have a resistance of 33 GΩ and 260 GΩ respectively thus the level of degradation is several orders of magnitude lower compared to a hard breakdown (HBD). Up to now it was only possible to localise defects at higher levels of degradation. Due to the high energy at these levels, original defect signatures for SBD are usually destroyed. To better control the process of degradation, a way to nearly freeze the degradation process is shown. This method was used to detect a 1 nA leakage current of a 2 μm × 2 μm structure with a resistance of 35 GΩ using optical beam induced resistance change (OBIRCH) which is a similar contactless fault isolation (CFI) method to TLS. The presented SBD localisations allow to plan accurate physical preparations for the first time. Physical analysis of PEM localised SBD and HBD have been performed and compared. Possibilities to further improve the presented SBD detection levels are discussed for OBIRCH. Limitations for PEM with Si – CCD and InGaAs detectors as a CFI for SBDs are discussed. [ABSTRACT FROM AUTHOR]

The clear correlation of defect localization by Electroluminescence to nanometer sized defects at Schottky gate contacts of GaN HEMTs are always challenging and limiting the root cause analysis of the stress related electrical degradation of the devices. In this paper a novel approach combining large area planar TEM defect screening followed by cross sectional preparation at identified defect sites is demonstrated to get access to relevant structural damages at the gate. The analysis flow is applied for normally-on GaN HEMT devices with an increased leakage at the Schottky gates observed after electrical stressing. To initiate electrical active degradation these devices were stressed up to significant changes in the electrical performance and then Electroluminescence spots were detected identifying possible defect positions. Metal intrusions into the AlGaN/ GaN stack underneath the Schottky gate contacts of only 20 nm size could be found by the newly combined planar/ cross-sectional analysis flow in good correlation to the EL spot positions. Analytical TEM investigations of the defects reveal Pt and Au inside the semiconductor reaching the 2DEG at a threading dislocation of the HEMT. These intrusions contribute to the gate leakage current and are causing the increased leakage current after electrical testing. • Gate leakage in GaN HEMTs by current driven metal intrusions at Schottky gate • Improved correlation of electroluminescence signal with structural defects • Failure mode in GaN HEMT analyzed by analytical TEM [ABSTRACT FROM AUTHOR]

A new thermal model based on a distributed and fast modeling approach for the modeling of gallium nitride (GaN) power devices is presented in this paper. The model is based on the application of Green’s function theory to obtain an analytical solution of the heat conduction equation. The model comprises an accurate, spatially distributed, and fast algorithm that calculates a 2-D thermal response at the 2-D electron gas level of GaN power devices in the steady-state and the transient regime. In comparison with finite element method finite-element model simulations, the model achieves a significant reduction of the computational time while retaining very good accuracy. The model shows strong capabilities for thermal analysis with respect to parameters that have a significant impact on the thermal behavior. Moreover, the nonlinear effect associated with the temperature-dependent thermal conductivity is encompassed together with the impact of package and ambience. As a validation study, the thermal behavior of packaged GaN devices is experimentally characterized by means of infrared thermography. An excellent agreement between the model results and experiments is observed. [ABSTRACT FROM AUTHOR]

The performance of normally-off Gallium-Nitride (GaN) High-Electron-Mobility-Transistors (HEMTs) under extended short circuit operation is investigated. A thermal limit is found in the aluminium metallization, where at temperatures around 600 °C a protrusion of the gate metal through the Inter-Level Dielectric (ILD) may form, short-circuiting gate and source metallization and thus resulting in a permanently-off failure state. The present work shows how this particular failure mode can be induced by extreme overload operation, and presents a Finite Element (FE) model which agrees with the experimental observations and gives insights in the mechanical stress-state developing in the device. The deeper thermo-mechanical understanding of the degradation mechanism suggests directions in order to improve the device's robustness. [ABSTRACT FROM AUTHOR]

The formation of voids in metal layers upon stress-induced migration is a well-known defect mechanism in integrated circuits. This phenomenon largely accelerates with increasing ambient temperature. Consequently, the occurrence and the growth of voids result in an increased electrical resistivity which once more leads to an acceleration of the growth rate highly impacting the reliability and the life span of the device. Technological improvements aim at the minimization of stress induced voiding. However, for understanding and optimization of process related factors non-destructive methods for screening and systematic monitoring of the void formation e.g. during stepwise reliability testing are required. In the current paper, the formation of voids induced by repetitive thermal loads has been assessed and evaluated semi-destructively by employing Scanning Acoustic GHz-Microscopy. Prior to the acoustic inspection, sophisticated semi-destructive preparation was required to provide access to the region of interest. Voids with sizes below the acoustic resolution limit have been detected. The relative number and the size of appearance have been analysed using a custom made analysis software tool. [ABSTRACT FROM AUTHOR]