151. Single-photon and photon pair emission from MOVPE-grown In(Ga)As quantum dots: shifting the emission wavelength from 1.0 to 1.3 μm
- Author
-
Fabian Olbrich, Michael Jetter, Matthias Paul, Katharina D. Zeuner, Jan Kettler, and Peter Michler
- Subjects
Quantum optics ,Physics ,Photon ,Photoluminescence ,Physics and Astronomy (miscellaneous) ,business.industry ,General Engineering ,Physics::Optics ,General Physics and Astronomy ,02 engineering and technology ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,021001 nanoscience & nanotechnology ,01 natural sciences ,Condensed Matter::Materials Science ,Quantum dot laser ,Quantum dot ,0103 physical sciences ,Electro-absorption modulator ,Optoelectronics ,Spontaneous emission ,Emission spectrum ,010306 general physics ,0210 nano-technology ,business - Abstract
InAs quantum dots grown on a GaAs substrate have been one of the most successful semiconductor material systems to demonstrate single-photon-based quantum optical phenomena. In this context, we present the feasibility to extend the low-temperature photoluminescence emission range of In(Ga)As/GaAs quantum dots grown by metal-organic vapor-phase epitaxy from the typical window between 880 and 960 nm to wavelengths above 1.3 μm. A low quantum dot density can be obtained throughout this range, enabling the demonstration of single- and cascaded photon emission. We further analyze polarization-resolved micro-photoluminescence from a large number of individual quantum dots with respect to anisotropy and size of the underlying fine-structure splittings in the emission spectra. For samples with elevated emission wavelengths, we observe an increasing tendency of the emitted photons to be polarized along the main crystal axes.
- Published
- 2016
- Full Text
- View/download PDF